NXP Semiconductors Diodes, Transistors and Thyristors
| Teile-Nr. | Preis | Bestand | Hersteller | Kategorie | Type | Maximum Rate of Rise of Off-State Voltage - (V/us) | Category | Maximum Rate of Rise of On-State Current - (A/us) | Material | Frequency Band | Channel Type | Maximum Gate Trigger Voltage - (V) | Configuration | Channel Mode | Typical Zener Voltage - (V) | Repetitive Peak Reverse Voltage - (V) | Peak Reverse Repetitive Voltage - (V) | Maximum Reverse Voltage - (V) | Maximum Gate Trigger Current - (mA) | Maximum Collector-Emitter Voltage - (V) | Zener Voltage Tolerance | Surge Current Rating - (A) | Maximum Reverse Current - (uA) | Maximum Continuous Forward Current - (A) | Maximum Collector-Base Voltage - (V) | Number of Elements per Chip | Mode of Operation | Minimum Tuning Ratio | Maximum Voltage Regulation - (mV) | Maximum Holding Current - (mA) | Maximum Drain-Gate Voltage - (V) | Maximum Continuous DC Collector Current - (A) | Maximum Base-Emitter Voltage - (V) | Typical Input Resistance - (kOhm) | Tuning Ratio Test Condition | Test Current - (mA) | Peak Non-Repetitive Forward Surge Current - (A) | Maximum Series Resistance @ Maximum IF - (Ohm) | Maximum Forward Voltage - (V) | Maximum Drain-Source Voltage - (V) | Maximum Base-Emitter Saturation Voltage - (V) | Typical Resistor Ratio | Peak Reverse Current - (uA) | Maximum Series Resistance @ Minimum IF - (Ohm) | Maximum Reverse Leakage Current - (uA) | Maximum Gate-Source Voltage - (V) | Maximum DC Collector Current - (A) | Peak On-State Voltage - (V) | Operational Bias Conditions | Minimum Diode Capacitance - (pF) | Maximum Regulator Current - (mA) | Maximum Junction Ambient Thermal Resistance | Maximum Gate Threshold Voltage - (V) | Maximum Gate Peak Inverse Voltage - (V) | Maximum Zener Impedance - (Ohm) | Maximum Power Dissipation - (mW) | Maximum Power Dissipation @ 25C - (mW) | Maximum Diode Capacitance - (pF) | Maximum Continuous Drain Current - (A) | Typical Carrier Life Time - (us) | RMS On-State Current - (A) | Repetitive Peak Forward Blocking Voltage - (V) | Rated Average On-State Current - (A) | Peak Reverse Recovery Time - (ns) | Minimum DC Current Gain Range | Minimum DC Current Gain | Maximum Drain-Source Resistance - (mOhm) | Typical Gate Charge @ Vgs - (nC) | Repetitive Peak Off-State Current - (mA) | Typical Gate Charge @ 10V - (nC) | Typical Output Capacitance - (pF) | Typical Input Capacitance @ Vds - (pF) | Typical Power Gain - (dB) | Minimum Frequency - (MHz) | Maximum Output Power - (W) | Maximum Collector-Emitter Saturation Voltage - (V) | Maximum Power 1dB Compression - (dBm) | Maximum Frequency - (MHz) | Typical 3rd Order Intercept Point - (dBm) | Maximum Transition Frequency - (MHz) | Maximum Noise Figure - (dB) | Typical Drain-Source Resistance @ 25°C - (mOhm) | Process Technology | Packaging | Rad Hard | Pin Count | Supplier Package | Standard Package Name | CECC Qualified | ESD Protection | ESCC Qualified | Military | AEC Qualified | AEC Qualified Number | Auto motive | P PAP | ECCN Code | SVHC | SVHC Exceeds Threshold |
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BF513,215
Trans JFET N-CH 20V 30mA Si 3-Pin TO-236AB T/R
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NXP Semiconductors | JFETs | Si | N | Single | 20 | 20 | 430 | 250 | 30 | 1.5(Typ) | Tape and Reel | 3 | TO-236AB | TO | No | No | No | No | No | EAR99 | Yes | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BF909,215
Trans RF MOSFET N-CH 7V 0.04A 4-Pin(3+Tab) SOT-143B T/R
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NXP Semiconductors | HF-MOSFETs | N | Dual | Enhancement | 2 | 7 | 6 | 200@Ta=50°C | 0.04 | 3.6@5V@Gate 1|2.3@5V@Gate 2 | 1000 | 2.8 | Tape and Reel | 4 | SOT-143B | SOT | No | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BFM520,115
Trans RF BJT NPN 8V 0.07A 1000mW 6-Pin TSSOP T/R
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NXP Semiconductors | HF-BJT | NPN | Si | Dual | 8 | 20 | 2 | 2.5 | 0.07 | 3V/20mA | 1000 | 50 to 120 | 60@20mA@6V | 15 | 9000(Typ) | 2.1 | Tape and Reel | 6 | TSSOP | SO | No | Unknown | No | No | No | No | EAR99 | Yes | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BUJ303A,127
Trans GP BJT NPN 500V 5A 100000mW 3-Pin(3+Tab) TO-220AB Rail
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NXP Semiconductors | GP BJT | NPN | Bipolar Power | Si | Single | 500 | 1 | 1.3@0.6A@3A | 5 | 100000 | 2 to 30 | 10@5mA@5V|14@500mA@5V | 1.5@0.6A@3A | Rail | 3 | TO-220AB | TO | No | Unknown | Unknown | Unknown | EAR99 | Yes | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MAC97A8,116
TRIAC 600V 0.6A(RMS) 8.8A 3-Pin SPT T/R
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NXP Semiconductors | TRIACs | 45(Typ) | 50 | 1.5 | 600 | 7 | 10 | 1.9@0.85A | 0.6 | 600 | 0.1 | Tape and Reel | 3 | SPT | No | Unknown | Unknown | Unknown | EAR99 | Yes | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
Z0103NN,135
TRIAC 800V 1A(RMS) 8.5A 4-Pin(3+Tab) SC-73 T/R
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NXP Semiconductors | TRIACs | 10(Min) | 50 | 1 | 800 | 5 | 7 | 1.6@1A | 1 | 800 | 0.5 | Tape and Reel | 4 | SC-73 | No | Unknown | Unknown | Unknown | EAR99 | Yes | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BF1201WR,115
Trans RF FET N-CH 10V 0.03A 4-Pin(3+Tab) CMPAK T/R
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NXP Semiconductors | HF-MOSFETs | N | Single Dual Gate | Enhancement | 1 | 10 | 6 | 200 | 0.03 | 2.6@5V@Gate 1|1.1@5V@Gate 2 | 33.5 | 7 | Tape and Reel | 4 | CMPAK | SOT | No | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BF1210,115
Trans RF MOSFET N-CH 6V 0.03A 6-Pin TSSOP T/R
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NXP Semiconductors | HF-MOSFETs | N | Dual | Enhancement | 2 | 6 | 6 | 180 | 0.03 | 2.2@5V@Gate 1|3@5V@Gate 2@Amp A|1.9@5V@Gate 1|3.4@5V@Gate 2@Amp B | 35@Amp A|36@Amp B | 1.9 | Tape and Reel | 6 | TSSOP | SO | No | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BF1212,215
Trans RF MOSFET N-CH 6V 0.03A 4-Pin(3+Tab) SOT-143B T/R
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NXP Semiconductors | HF-MOSFETs | N | Dual | Enhancement | 2 | 6 | 6 | 180 | 0.03 | 1.7@5V@Gate 1|1.1@5V@Gate 2 | 35 | 1.8 | Tape and Reel | 4 | SOT-143B | SOT | No | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MRF6V12250HR5
Trans RF MOSFET N-CH 100V 3-Pin NI-780 T/R
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492,227 €
pro Stück
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NXP Semiconductors | HF-MOSFETs | N | Single | Enhancement | 1 | 100 | 10 | 20.3 | 960 | 275(Typ) | 1215 | Tape and Reel | 3 | NI-780 | No | No | No | No | No | EAR99 | Yes | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MRF8S18210WGHSR3
Trans RF MOSFET N-CH 65V 3-Pin NI-880XS T/R
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NXP Semiconductors | HF-MOSFETs | N | Single | Enhancement | 1 | 1-Carrier W-CDMA | 65 | 10 | 2.7 | 17.8 | 1805 | 50(Typ) | 1995 | Tape and Reel | 3 | NI-880XS | No | No | No | No | No | EAR99 | Yes | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BFU550WF
Trans RF BJT NPN 16V 0.08A 450mW Automotive AEC-Q101 3-Pin SC-70 T/R
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Von 0,1444 € bis 0,1497 €
pro Stück
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NXP Semiconductors | HF-BJT | NPN | Si | Single | 16 | 30 | 1 | 3 | 0.08 | 8V/25mA | 450 | 50 to 120 | 60@15mA@8V | 0.74 | 24 | 13.5(Typ) | 23 | 11000(Typ) | 1.3(Min) | Tape and Reel | 3 | SC-70 | SOT | No | No | Yes | AEC-Q101 | Yes | Yes | EAR99 | Yes | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MMRF1305HR5
Trans RF MOSFET N-CH 133V 5-Pin NI-780 T/R
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NXP Semiconductors | HF-MOSFETs | N | Dual Common Source | Enhancement | 2 | Pulse | 133 | 10 | 2.6 | 73.6@50V | 26 | 1.8 | 100(Typ) | 2000 | Tape and Reel | 5 | NI-780 | No | No | No | No | EAR99 | Yes | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MRF6V12500HSR5
Trans RF FET N-CH 110V 3-Pin NI-780S T/R
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Von 625,6664 € bis 752,0007 €
pro Stück
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NXP Semiconductors | HF-MOSFETs | N | Single | Enhancement | 1 | 110 | 10 | 1391@50V | 19.7 | 960 | 500(Typ) | 1215 | Tape and Reel | 3 | NI-780S | No | No | No | No | No | EAR99 | Yes | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BZV85-C5V1,113
Zener Diode Single 5.1V 5% 10Ohm 1300mW 2-Pin DO-41 T/R
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NXP Semiconductors | Zener | Voltage Regulator | Single | 5.1 | 5% | 45 | 3 | 10 | 1300 | 1300 | Tape and Reel | 2 | DO-41 | DO | No | No | No | No | No | EAR99 | Yes | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BZX79-C10,113
Diode Zener Single 10V 5% 500mW 2-Pin ALF T/R
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NXP Semiconductors | Zener | Voltage Regulator | Single | 10 | 5% | 5 | 0.9 | 0.2 | 20 | 500 | 90 | Tape and Reel | 2 | ALF | DO | No | Yes | No | No | No | No | EAR99 | Yes | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BTA312B-600D,118
TRIAC 600V 12A(RMS) 110A 3-Pin(2+Tab) D2PAK T/R
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NXP Semiconductors | TRIACs | 20(Min) | 100 | 1 | 600 | 5 | 10 | 1.6@15A | 12 | 600 | 0.5 | Tape and Reel | 3 | D2PAK | TO | No | Unknown | Unknown | Unknown | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BYQ30E-200,127
Diode Switching 200V 16A 3-Pin(3+Tab) TO-220AB Rail
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NXP Semiconductors | Gleichrichter | Switching Diode | Dual Common Cathode | 200 | 16 | 88 | 1.25 | 30 | 25 | Rail | 3 | TO-220AB | TO | No | No | Unknown | Unknown | Unknown | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BAS86,115
Diode Schottky 0.2A 2-Pin Mini-MELF T/R
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NXP Semiconductors | Gleichrichter | Schottky Diode | Single | 0.2 | 5 | 0.9@0.1A | 5 | 8 | 4 | Tape and Reel | 2 | Mini-MELF | MELF | No | No | No | No | No | EAR99 | Yes | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MMRF1311HR5
Trans RF FET 50V Automotive AEC-Q101 5-Pin NI-1230H T/R
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NXP Semiconductors | HF-MOSFETs | MOSFET | 50 | 470 | 600 | 860 | Tape and Reel | 5 | NI-1230H | No | Yes | AEC-Q101 | Yes | Yes | EAR99 | Yes | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BF1203,115
Trans RF MOSFET N-CH 10V 0.03A 6-Pin TSSOP T/R
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NXP Semiconductors | HF-MOSFETs | N | Dual Dual Gate | Enhancement | 2 | 10 | 6 | 200 | 0.03 | 2.6@5V@Gate 1|3@5V@Gate 2 | 32.5@Amp A|34@Amp B | 7 | Tape and Reel | 6 | TSSOP | SO | No | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
AFT09H310-04GSR6
Trans RF MOSFET N-CH 70V 5-Pin NI-1230S T/R
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NXP Semiconductors | HF-MOSFETs | N | Enhancement | 1-Carrier W-CDMA | 70 | 10 | 1.9 | 17.9 | 920 | 56(Typ) | 960 | Tape and Reel | 5 | NI-1230S | No | No | No | No | No | EAR99 | Yes | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AFT18H357-24SR6 Trans RF MOSFET N-CH 65V 7-Pin NI-1230 T/R |
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NXP Semiconductors | HF-MOSFETs | N | Enhancement | 1-Carrier W-CDMA | 65 | 10 | 1.6 | 17.3 | 1805 | 63(Typ) | 1995 | 7 | NI-1230 | No | No | No | No | No | EAR99 | Yes | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
AFT21H350W03SR6
Trans RF MOSFET N-CH 65V 5-Pin NI-1230S T/R
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NXP Semiconductors | HF-MOSFETs | N | Enhancement | 1-Carrier W-CDMA | 65 | 10 | 1.6 | 324000 | 16.4 | 2110 | 63(Typ) | 2170 | Tape and Reel | 5 | NI-1230S | No | No | No | No | EAR99 | Yes | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| A5G21H605W19NR3 Air Fast RF Power GaN Transistor |
Von 147,3466 € bis 182,2488 €
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NXP Semiconductors | HF-BJT | Unknown | Unknown | Unknown | 5A991g. | Yes | No |