onsemi Dioden, Transistoren und Thyristoren

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• Hersteller
• Kategorie
• Bestand
• Type
• Technology
• Maximum Rate of Rise of Off-State Voltage - (V/us)
• Maximum Breakover Voltage - (V)
• Category
• Bridge Type
• Maximum Rate of Rise of On-State Current - (A/us)
• Maximum Peak Operating Voltage - (V)
• Maximum Breakover Current - (mA)
• Material
• Frequency Band
• Diode Type
• Channel Type
• Maximum Gate Trigger Voltage - (V)
• Configuration
• Channel Mode
• Typical Zener Voltage - (V)
• Repetitive Peak Reverse Voltage - (V)
• Peak Reverse Repetitive Voltage - (V)
• Maximum Reverse Voltage - (V)
• Maximum Gate Trigger Current - (mA)
• Maximum Gate Emitter Voltage - (V)
• Maximum Collector-Emitter Voltage - (V)
• Zener Voltage Tolerance
• Surge Current Rating - (A)
• Peak Average Forward Current - (A)
• Maximum Reverse Current - (uA)
• Maximum Continuous Forward Current - (A)
• Maximum Collector-Base Voltage - (V)
• Peak RMS Reverse Voltage - (V)
• Number of Elements per Chip
• Minimum Tuning Ratio
• Maximum Voltage Regulation - (mV)
• Maximum Holding Current - (mA)
• Maximum Drain-Gate Voltage - (V)
• Maximum Continuous DC Collector Current - (A)
• Maximum Base-Emitter Voltage - (V)
• Typical Input Resistance - (kOhm)
• Tuning Ratio Test Condition
• Test Current - (mA)
• Peak Non-Repetitive Forward Surge Current - (A)
• Maximum Series Resistance @ Maximum IF - (Ohm)
• Maximum Forward Voltage - (V)
• Maximum Drain-Source Voltage - (V)
• Maximum Base-Emitter Saturation Voltage - (V)
• Typical Resistor Ratio
• Peak Reverse Current - (uA)
• Minimum Quality Factor
• Maximum Series Resistance @ Minimum IF - (Ohm)
• Maximum Reverse Leakage Current - (uA)
• Maximum Gate-Source Voltage - (V)
• Maximum DC Collector Current - (A)
• Peak On-State Voltage - (V)
• Operational Bias Conditions
• Minimum Diode Capacitance - (pF)
• Maximum Regulator Current - (mA)
• Maximum Junction Ambient Thermal Resistance
• Maximum Gate Threshold Voltage - (V)
• Maximum Gate Peak Inverse Voltage - (V)
• Maximum Zener Impedance - (Ohm)
• Maximum Power Dissipation - (mW)
• Maximum Power Dissipation @ 25C - (mW)
• Maximum Diode Capacitance - (pF)
• Maximum Continuous Drain Current - (A)
• RMS On-State Current - (A)
• Repetitive Peak Forward Blocking Voltage - (V)
• Rated Average On-State Current - (A)
• Peak Reverse Recovery Time - (ns)
• Minimum DC Current Gain Range
• Minimum DC Current Gain
• Maximum Drain-Source Resistance - (mOhm)
• Typical Gate Charge @ Vgs - (nC)
• Repetitive Peak Off-State Current - (mA)
• Maximum Junction Case Thermal Resistance
• Typical Gate Charge @ 10V - (nC)
• Typical Output Capacitance - (pF)
• Typical Input Capacitance @ Vds - (pF)
• Typical Power Gain - (dB)
• Maximum Output Power - (W)
• Maximum Collector-Emitter Saturation Voltage - (V)
• Maximum Power 1dB Compression - (dBm)
• Typical 3rd Order Intercept Point - (dBm)
• Maximum Transition Frequency - (MHz)
• Maximum Noise Figure - (dB)
• Typical Drain-Source Resistance @ 25°C - (mOhm)
• Process Technology
• Packaging
• Rad Hard
• Pin Count
• Supplier Package
• Standard Package Name
• CECC Qualified
• ESD Protection
• ESCC Qualified
• Military
• AEC Qualified
• AEC Qualified Number
• Auto motive
• P PAP
• ECCN Code
• SVHC
• SVHC Exceeds Threshold

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