Toshiba Diodes, Transistors and Thyristors
| Teile-Nr. | Preis | Bestand | Hersteller | Kategorie | Type | Maximum Rate of Rise of Off-State Voltage - (V/us) | Category | Maximum Rate of Rise of On-State Current - (A/us) | Material | Frequency Band | Channel Type | Maximum Gate Trigger Voltage - (V) | Configuration | Channel Mode | Typical Zener Voltage - (V) | Repetitive Peak Reverse Voltage - (V) | Peak Reverse Repetitive Voltage - (V) | Maximum Reverse Voltage - (V) | Maximum Gate Trigger Current - (mA) | Maximum Gate Emitter Voltage - (V) | Maximum Collector-Emitter Voltage - (V) | Zener Voltage Tolerance | Surge Current Rating - (A) | Maximum Reverse Current - (uA) | Maximum Continuous Forward Current - (A) | Maximum Collector-Base Voltage - (V) | Number of Elements per Chip | Minimum Tuning Ratio | Maximum Holding Current - (mA) | Maximum Drain-Gate Voltage - (V) | Maximum Continuous DC Collector Current - (A) | Maximum Base-Emitter Voltage - (V) | Typical Input Resistance - (kOhm) | Tuning Ratio Test Condition | Test Current - (mA) | Peak Non-Repetitive Forward Surge Current - (A) | Maximum Series Resistance @ Maximum IF - (Ohm) | Maximum Forward Voltage - (V) | Maximum Drain-Source Voltage - (V) | Maximum Base-Emitter Saturation Voltage - (V) | Typical Resistor Ratio | Peak Reverse Current - (uA) | Maximum Reverse Leakage Current - (uA) | Maximum Gate-Source Voltage - (V) | Maximum DC Collector Current - (A) | Peak On-State Voltage - (V) | Operational Bias Conditions | Minimum Diode Capacitance - (pF) | Maximum Junction Ambient Thermal Resistance | Maximum Gate Threshold Voltage - (V) | Maximum Gate Peak Inverse Voltage - (V) | Maximum Zener Impedance - (Ohm) | Maximum Power Dissipation - (mW) | Maximum Power Dissipation @ 25C - (mW) | Maximum Diode Capacitance - (pF) | Maximum Continuous Drain Current - (A) | RMS On-State Current - (A) | Repetitive Peak Forward Blocking Voltage - (V) | Rated Average On-State Current - (A) | Peak Reverse Recovery Time - (ns) | Minimum DC Current Gain Range | Minimum DC Current Gain | Maximum Drain-Source Resistance - (mOhm) | Typical Gate Charge @ Vgs - (nC) | Repetitive Peak Off-State Current - (mA) | Maximum Junction Case Thermal Resistance | Typical Gate Charge @ 10V - (nC) | Typical Output Capacitance - (pF) | Typical Input Capacitance @ Vds - (pF) | Typical Power Gain - (dB) | Maximum Output Power - (W) | Maximum Collector-Emitter Saturation Voltage - (V) | Maximum Frequency - (MHz) | Typical 3rd Order Intercept Point - (dBm) | Maximum Transition Frequency - (MHz) | Maximum Noise Figure - (dB) | Typical Drain-Source Resistance @ 25°C - (mOhm) | Process Technology | Packaging | Pin Count | Supplier Package | Standard Package Name | CECC Qualified | ESD Protection | Military | AEC Qualified | AEC Qualified Number | Auto motive | P PAP | ECCN Code | SVHC | SVHC Exceeds Threshold |
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TPN22006NH,LQ(S
Trans MOSFET N-CH Si 60V 21A 8-Pin TSON EP Advance T/R
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Bestand
980
Von 0,1681 € bis 0,4662 €
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single Quad Drain Triple Source | Enhancement | 1 | 60 | ±20 | 18000 | 21 | 22@10V | 12@10V | 12 | 710@30V | Tape and Reel | 8 | TSON EP Advance | SON | No | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
1SV280,H3F(T
Diode VAR Cap Single 15V 3.8pF 2-Pin ESC T/R
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Bestand
2.119
Von 0,0859 € bis 0,2244 €
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Toshiba | Varaktors | VCO | UHF | Single | 15 | 0.003 | 2 | 2V/10V | 3.8@2V | Tape and Reel | 2 | ESC | SOD | No | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TK10A60W,S4VX(M
Trans MOSFET N-CH Si 600V 9.7A 3-Pin(3+Tab) TO-220SIS Magazine
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Bestand
35
Von 0,5182 € bis 0,6057 €
pro Stück
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 600 | ±30 | 30000 | 9.7 | 380@10V | 20@10V | 700@300V | 3 | TO-220SIS | TO | No | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
1SS190(TE85L,F)
Diode Switching 85V 0.1A 3-Pin S-Mini T/R Automotive AEC-Q101
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Bestand
1.033
Von 0,0585 € bis 0,1213 €
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Toshiba | Gleichrichter | Switching Diode | Single | 85 | 0.1 | 2 | 1.2@0.1A | 0.5 | 150 | 4 | Tape and Reel | 3 | S-Mini | SOT | No | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TK290P60Y,RQ
Trans MOSFET N-CH Si 600V 11.5A 3-Pin(2+Tab) DPAK T/R
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Bestand
3
0,3985 €
pro Stück
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 600 | ±30 | 4 | 100000 | 11.5 | 290@10V | 25@10V | 25 | 730@300V | Tape and Reel | 3 | DPAK | TO | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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TK380A60Y,S4X
Trans MOSFET N-CH Si 600V 9.7A 3-Pin(3+Tab) TO-220SIS Tube
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Bestand
4
0,3985 €
pro Stück
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 600 | ±30 | 4 | 30000 | 9.7 | 380@10V | 20@10V | 20 | 590@300V | Tube | 3 | TO-220SIS | TO | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
CSLZ6V8,L3F | 6.8V ZNR DIODE SOD-962 OVP
Diode Zener Single 6.8V 6% 400mW 2-Pin SL T/R
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Bestand
7.340
Von 0,0083 € bis 0,041 €
pro Stück
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Toshiba | Zener | Voltage Regulator | Single | 6.8 | 6% | 5 | 0.5 | 30 | 400 | 400 | Tape and Reel | 2 | SL | SOD | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SSM3K16FU,LF
Trans MOSFET N-CH Si 20V 0.1A 3-Pin USM T/R Automotive AEC-Q101
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Bestand
87
Von 0,0373 € bis 0,1185 €
pro Stück
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Toshiba | MOSFETs | Small Signal | Si | N | Single | Enhancement | 1 | 20 | ±10 | 150 | 0.1 | 3000@4V | 9.3@3V | Tape and Reel | 3 | USM | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TW015Z65C,S1F
Trans MOSFET N-CH SiC 650V 100A 4-Pin(4+Tab) TO-247 Tube
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Bestand
30
26,7344 €
pro Stück
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Toshiba | MOSFETs | Power MOSFET | SiC | N | Single Dual Source | Enhancement | 1 | 650 | 25 | 342000 | 100 | 22@18V | 128@18V | 4850@400V | Tube | 4 | TO-247 | TO | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TPCP8505(TE85L,F)
Trans GP BJT NPN 50V 3A 3000mW 8-Pin PS T/R
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Bestand
1.765
Von 0,083 € bis 0,0919 €
pro Stück
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Toshiba | GP BJT | NPN | Bipolar Power | Si | Single Hex Collector | 50 | 100 | 1 | 7 | 1.1@20mA@1A | 3 | 3000 | 200 to 300|300 to 500 | 200@1A@2V|400@0.3A@2V | 0.14@20mA@1A | Tape and Reel | 8 | PS | No | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TK14G65W,RQ(S
Trans MOSFET N-CH Si 650V 13.7A 3-Pin(2+Tab) D2PAK T/R
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Bestand
875
Von 1,0399 € bis 2,4351 €
pro Stück
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 650 | ±30 | 130000 | 13.7 | 250@10V | 35@10V | 35 | 1300@300V | Tape and Reel | 3 | D2PAK | TO | No | No | No | No | No | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SSM6N67NU,LF(T Trans MOSFET N-CH Si 30V 4A 6-Pin UDFN EP |
Bestand
1.715
Von 0,2149 € bis 0,5945 €
pro Stück
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Toshiba | MOSFETs | Power MOSFET | Si | N | Dual | Enhancement | 2 | 30 | 12 | 2000 | 4 | 39.1@4.5V | 3.2@4.5V | 310@15V | 6 | UDFN EP | DFN | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SSM5N15FE(TE85L,F)
Trans MOSFET N-CH Si 30V 0.1A 5-Pin ESV T/R
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Bestand
1.630
Von 0,0789 € bis 0,3371 €
pro Stück
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Toshiba | MOSFETs | Small Signal | Si | N | Dual Common Source | Enhancement | 2 | 30 | ±20 | 150 | 0.1 | 4000@4V | 7.8@3V | Tape and Reel | 5 | ESV | SOT | No | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TPH5R60APL,L1Q(M
Trans MOSFET N-CH Si 100V 60A 8-Pin SOP Advance
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Bestand
24
Von 0,6551 € bis 1,3346 €
pro Stück
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single Quad Drain Triple Source | Enhancement | 1 | 100 | ±20 | 132000 | 60 | 5.6@10V | 26@4.5V|52@10V | 3300@50V | 8 | SOP Advance | SO | No | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TTC015B,Q(S)
Trans GP BJT NPN 80V 2A 1500mW 3-Pin TO-126N Sack
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Bestand
39
0,3475 €
pro Stück
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Toshiba | GP BJT | NPN | Bipolar Power | Si | Single | 80 | 160 | 1 | 7 | 1.5@100mA@1A | 2 | 1500 | 50 to 120 | 80@1mA@2V|100@0.5A@2V|60@1A@2V | 0.3@5mA@0.5A|0.5@100mA@1A | Sack | 3 | TO-126N | No | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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TPN2R203NC,L1Q
Trans MOSFET N-CH Si 30V 100A 8-Pin TSON EP Advance T/R
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Bestand
235.000
0,1764 €
pro Stück
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single Quad Drain Triple Source | Enhancement | 1 | 30 | ±20 | 1900 | 100 | 2.2@10V | 34@10V | 34 | 2230@15V | Tape and Reel | 8 | TSON EP Advance | SON | No | No | No | No | No | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TK7R0E08QM,S1X
Trans MOSFET N-CH Si 80V 64A 3-Pin(3+Tab) TO-220 Tube
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Bestand
150
0,3785 €
pro Stück
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 80 | ±20 | 3.5 | 87000 | 64 | 7@10V | 24@6V|39@10V | 39 | 2700@40V | U-MOS X-H | Tube | 3 | TO-220 | TO | No | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TK1Q90A(Q) Trans MOSFET N-CH Si 900V 1A 3-Pin(3+Tab) New PW-Mold2 Bag |
Bestand
340
0,9619 €
pro Stück
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 900 | ±30 | 20000 | 1 | 9000@10V | 13@10V | 13 | 320@25V | Bag | 3 | New PW-Mold2 | No | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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TTA1452B,S4X
Trans GP BJT PNP 80V 12A 2000mW 3-Pin(3+Tab) TO-220SIS Magazine
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Bestand
250
1,1705 €
pro Stück
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Toshiba | GP BJT | PNP | Bipolar Power | Si | Single | 80 | 80 | 1 | 6 | 1.2@0.3A@6A | 12 | 2000 | 30 to 50|50 to 120|120 to 200 | 120@1A@1V|40@6A@1V | 0.4@0.3A@6A | Magazine | 3 | TO-220SIS | TO | No | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CRS10I30E,LQ(O Schottky Barrier Diode |
Bestand
2.900
Von 0,056 € bis 0,1317 €
pro Stück
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Toshiba | Gleichrichter | 2 | S-FLAT | No | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
CRH01(T5L,TEMQ)
Diode Switching 200V 1A 2-Pin S-FLAT T/R
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Bestand
2.011
Von 0,0368 € bis 0,1005 €
pro Stück
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Toshiba | Gleichrichter | Switching Diode | Single | 200 | 1 | 15 | 0.98 | 10 | 35 | Tape and Reel | 2 | S-FLAT | No | No | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SC2712-BL,LXGF(T Transistor Silicon NPN Epitaxial PCT Process Audio Frequency General Purpose Amplifier Automotive AEC-Q101 |
Bestand
2.450
0,5078 €
pro Stück
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Toshiba | GP BJT | 3 | S-Mini | SOT | No | Yes | AEC-Q101 | Yes | Unknown | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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TK1K9A60F,S4X
Trans MOSFET N-CH Si 600V 3.7A 3-Pin(3+Tab) TO-220SIS Tube
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Bestand
19
0,2589 €
pro Stück
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 600 | ±30 | 30000 | 3.7 | 1900@10V | 14@10V | 14 | 490@300V | Tube | 3 | TO-220SIS | TO | No | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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CRS09(T5L,TEMQ)
Diode Schottky 30V 1.5A 2-Pin S-FLAT T/R
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Bestand
318
Von 0,0766 € bis 0,1707 €
pro Stück
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Toshiba | Gleichrichter | Schottky Diode | Single | 30 | 1.5@Ta=84C | 30 | 0.46 | 50 | 140°C/W | Tape and Reel | 2 | S-FLAT | No | Unknown | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
RN1502(TE85L,F)
Trans Digital BJT NPN 50V 0.1A 300mW 5-Pin SMV T/R
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Bestand
77
Von 0,1049 € bis 0,2002 €
pro Stück
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Toshiba | Digital-BJT | NPN | Dual Common Emitter | 50 | 0.1 | 10 | 1 | 300 | 50@10mA@5V | 0.3@0.25mA@5mA | Tape and Reel | 5 | SMV | SOT | No | No | No | No | No | EAR99 | No |