Toshiba Diodes, Transistors and Thyristors
| Teile-Nr. | Preis | Bestand | Hersteller | Kategorie | Type | Maximum Rate of Rise of Off-State Voltage - (V/us) | Category | Maximum Rate of Rise of On-State Current - (A/us) | Material | Frequency Band | Channel Type | Maximum Gate Trigger Voltage - (V) | Configuration | Channel Mode | Typical Zener Voltage - (V) | Repetitive Peak Reverse Voltage - (V) | Peak Reverse Repetitive Voltage - (V) | Maximum Reverse Voltage - (V) | Maximum Gate Trigger Current - (mA) | Maximum Gate Emitter Voltage - (V) | Maximum Collector-Emitter Voltage - (V) | Zener Voltage Tolerance | Surge Current Rating - (A) | Maximum Reverse Current - (uA) | Maximum Continuous Forward Current - (A) | Maximum Collector-Base Voltage - (V) | Number of Elements per Chip | Minimum Tuning Ratio | Maximum Holding Current - (mA) | Maximum Drain-Gate Voltage - (V) | Maximum Continuous DC Collector Current - (A) | Maximum Base-Emitter Voltage - (V) | Typical Input Resistance - (kOhm) | Tuning Ratio Test Condition | Test Current - (mA) | Peak Non-Repetitive Forward Surge Current - (A) | Maximum Series Resistance @ Maximum IF - (Ohm) | Maximum Forward Voltage - (V) | Maximum Drain-Source Voltage - (V) | Maximum Base-Emitter Saturation Voltage - (V) | Typical Resistor Ratio | Peak Reverse Current - (uA) | Maximum Reverse Leakage Current - (uA) | Maximum Gate-Source Voltage - (V) | Maximum DC Collector Current - (A) | Peak On-State Voltage - (V) | Operational Bias Conditions | Minimum Diode Capacitance - (pF) | Maximum Junction Ambient Thermal Resistance | Maximum Gate Threshold Voltage - (V) | Maximum Gate Peak Inverse Voltage - (V) | Maximum Zener Impedance - (Ohm) | Maximum Power Dissipation - (mW) | Maximum Power Dissipation @ 25C - (mW) | Maximum Diode Capacitance - (pF) | Maximum Continuous Drain Current - (A) | RMS On-State Current - (A) | Repetitive Peak Forward Blocking Voltage - (V) | Rated Average On-State Current - (A) | Peak Reverse Recovery Time - (ns) | Minimum DC Current Gain Range | Minimum DC Current Gain | Maximum Drain-Source Resistance - (mOhm) | Typical Gate Charge @ Vgs - (nC) | Repetitive Peak Off-State Current - (mA) | Maximum Junction Case Thermal Resistance | Typical Gate Charge @ 10V - (nC) | Typical Output Capacitance - (pF) | Typical Input Capacitance @ Vds - (pF) | Typical Power Gain - (dB) | Maximum Output Power - (W) | Maximum Collector-Emitter Saturation Voltage - (V) | Maximum Frequency - (MHz) | Typical 3rd Order Intercept Point - (dBm) | Maximum Transition Frequency - (MHz) | Maximum Noise Figure - (dB) | Typical Drain-Source Resistance @ 25°C - (mOhm) | Process Technology | Packaging | Pin Count | Supplier Package | Standard Package Name | CECC Qualified | ESD Protection | Military | AEC Qualified | AEC Qualified Number | Auto motive | P PAP | ECCN Code | SVHC | SVHC Exceeds Threshold |
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TJ15S10M3,LQ(O
Trans MOSFET P-CH Si 100V 15A 3-Pin(2+Tab) DPAK+ T/R
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Bestand
1.078
Von 0,4673 € bis 0,8984 €
pro Stück
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Toshiba | MOSFETs | Power MOSFET | Si | P | Single | Enhancement | 1 | 100 | 10 | 4 | 75000 | 15 | 130@10V | 69@10V | 69 | 3200@10V | Tape and Reel | 3 | DPAK+ | TO | No | No | No | No | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SSM3J15FV,L3F
Trans MOSFET P-CH Si 30V 0.1A 3-Pin VESM T/R Automotive AEC-Q101
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Bestand
15.547
Von 0,0118 € bis 0,0248 €
pro Stück
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Toshiba | MOSFETs | Small Signal | Si | P | Single | Enhancement | 1 | 30 | ±20 | 150 | 0.1 | 12000@4V | 9.1@3V | Tape and Reel | 3 | VESM | SOT | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TK7S10N1Z,LQ(O
Trans MOSFET N-CH Si 100V 7A 3-Pin(2+Tab) DPAK+ T/R Automotive AEC-Q101
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Bestand
225
Von 0,3974 € bis 0,768 €
pro Stück
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 100 | ±20 | 4 | 50000 | 7 | 48@10V | 7.1@10V | 7.1 | 470@10V | Tape and Reel | 3 | DPAK+ | TO | No | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SC6100,LF(T
Trans GP BJT NPN 50V 2.5A 800mW 3-Pin UFM T/R
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Bestand
1.506
Von 0,1012 € bis 0,1123 €
pro Stück
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Toshiba | GP BJT | NPN | Bipolar Small Signal | Si | Single | 50 | 100 | 1 | 5 | 1.1@20mA@1A | 2.5 | 800 | 200 to 300|300 to 500 | 200@1A@2V|400@0.3A@2V | 0.14@20mA@1A | Tape and Reel | 3 | UFM | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SSM3K36TU,LF(T
Trans MOSFET N-CH Si 20V 0.5A 3-Pin UFM T/R
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Bestand
40
0,1382 €
pro Stück
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Toshiba | MOSFETs | Small Signal | Si | N | Single | Enhancement | 1 | 20 | ±10 | 800 | 0.5 | 630@5V | 1.23@4V | 46@10V | Tape and Reel | 3 | UFM | No | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TPH8R903NL,LQ(S
Trans MOSFET N-CH Si 30V 38A 8-Pin SOP Advance T/R
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Bestand
1.014
Von 0,1313 € bis 0,1719 €
pro Stück
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single Quad Drain Triple Source | Enhancement | 1 | 30 | ±20 | 2.3 | 2800 | 38 | 8.9@10V | 4.4@4.5V|9.8@10V | 9.8 | 630@15V | 8 | SOP Advance | SO | Unknown | Unknown | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TK125V65Z,LQ(S
Trans MOSFET N-CH 650V 24A 5-Pin DFN EP
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Bestand
2.500
Von 1,5635 € bis 2,937 €
pro Stück
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Toshiba | MOSFETs | Power MOSFET | N | Single Triple Source | Enhancement | 1 | 650 | ±30 | 190000 | 24 | 125@10V | 40@10V | 2250@300V | 5 | DFN EP | DFN | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TPCF8107,LF(CM
Trans MOSFET P-CH Si 30V 6A 8-Pin VS T/R
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Bestand
100
Von 0,2082 € bis 0,4665 €
pro Stück
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Toshiba | MOSFETs | Power MOSFET | Si | P | Single Hex Drain | Enhancement | 1 | 30 | 20 | 2500 | 6 | 28@10V | 22@10V | 22 | 970@10V | 8 | VS | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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TJ50S06M3L(T6L1,NQ
Trans MOSFET P-CH Si 60V 50A 3-Pin(2+Tab) DPAK+ T/R Automotive AEC-Q101
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Bestand
10.584
Von 0,695 € bis 0,7094 €
pro Stück
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Toshiba | MOSFETs | Power MOSFET | Si | P | Single | Enhancement | 1 | 60 | 10 | 3 | 90000 | 50 | 13.8@10V | 124@10V | 124 | 6290@10V | 10.3@10V|12@6V | Tape and Reel | 3 | DPAK+ | TO | No | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
CMS06(TE12L,Q,M)
Diode Schottky 30V 2A 2-Pin M-FLAT T/R
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Bestand
22
0,2358 €
pro Stück
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Toshiba | Gleichrichter | Schottky Diode | Single | 30 | 2 | 40 | 0.37 | 3000 | 135°C/W | Tape and Reel | 2 | M-FLAT | No | Unknown | No | No | No | No | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SK4107(F)
Trans MOSFET N-CH Si 500V 15A 3-Pin(3+Tab) TO-3PN
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 500 | ±30 | 150000 | 15 | 400@10V | 48@10V | 48 | 2450@25V | 3 | TO-3PN | TO | No | No | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BAS516,L3F(B Diode Switching 100V 0.25A 2-Pin ESC Automotive AEC-Q101 |
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Toshiba | Gleichrichter | 2 | ESC | SOD | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SC2712-GR,LF(B
Trans GP BJT NPN 50V 0.15A 150mW 3-Pin S-Mini Automotive AEC-Q101
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Toshiba | GP BJT | NPN | Bipolar Small Signal | Si | Single | 50 | 60 | 1 | 5 | 0.15 | 150 | 50 to 120 | 70@2mA@6V | 2 | 0.25@10mA@100mA | 10 | 3 | S-Mini | SOT | No | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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TK3R1P04PL,RQ(S2
Trans MOSFET N-CH Si 40V 130A 3-Pin(2+Tab) DPAK
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 40 | ±20 | 87000 | 130 | 3.1@10V | 30@4.5V|60@10V | 4670@20V | 3 | DPAK | TO | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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2SC3138-Y(TE85L,F)
Trans GP BJT NPN 200V 0.05A 150mW 3-Pin S-Mini T/R
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Toshiba | GP BJT | NPN | Bipolar Small Signal | Si | Single | 200 | 200 | 1 | 5 | 1.5@1mA@10mA | 0.05 | 150 | 120 to 200 | 120@10mA@3V | 0.5@1mA@10mA | Tape and Reel | 3 | S-Mini | SOT | No | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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2SC5232-B(TE85L,F)
Trans GP BJT NPN 12V 0.5A 150mW 3-Pin S-Mini T/R
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Toshiba | GP BJT | NPN | Bipolar Small Signal | Si | Single | 12 | 15 | 1 | 5 | 1.2@10mA@200mA | 0.5 | 150 | 500 to 3600 | 500@10mA@2V | 0.03@0.5mA@10mA|0.25@10mA@200mA | Tape and Reel | 3 | S-Mini | SOT | No | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SSM3K341R,LXHF
Trans MOSFET N-CH Si 60V 6A 3-Pin SOT-23F Automotive AEC-Q101
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 60 | ±20 | 2400 | 6 | 36@10V | 9.3@10V | 9.3 | 550@10V | 3 | SOT-23F | SOT | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MT3S113TU,LF
Trans RF BJT NPN 5.3V 0.1A 900mW 3-Pin UFM T/R
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Toshiba | HF-BJT | NPN | SiGe | Single | 5.3 | 1 | 0.6 | 0.1 | 5V/50mA | 900 | 200 to 300 | 200@30mA@5V | 1.49 | 18 | 34.8 | 11200(Typ) | 1.45 | Tape and Reel | 3 | UFM | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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TK6P53D(T6RSS-Q)
Trans MOSFET N-CH Si 525V 6A 3-Pin(2+Tab) DPAK T/R
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Von 0,5856 € bis 0,6347 €
pro Stück
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 525 | ±30 | 100000 | 6 | 1300@10V | 12@10V | 12 | 600@25V | Tape and Reel | 3 | DPAK | TO | No | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SSM3K116TU,LF(B
Trans MOSFET N-CH Si 30V 2.2A 3-Pin UFM
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Toshiba | MOSFETs | Small Signal | Si | N | Single | Enhancement | 1 | 30 | ±12 | 800 | 2.2 | 100@4.5V | 245@10V | 3 | UFM | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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TPH7R204PL,LQ
Trans MOSFET N-CH Si 40V 72A 8-Pin SOP Advance T/R
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0,2203 €
pro Stück
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single Quad Drain Triple Source | Enhancement | 1 | 40 | ±20 | 1800 | 72 | 7.2@10V | 12@4.5V|24@10V | 24 | 1570@20V | Tape and Reel | 8 | SOP Advance | SO | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TD62382APG(5)
Trans Darlington NPN/PNP 50V 0.05A 1470mW 18-Pin PDIP
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Toshiba | Darlington BJT | NPN|PNP | Octal | 50 | 8 | 0.05 | 1470 | 0.23@40mA | 0.13um | 18 | PDIP | DIP | No | No | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TPN2R805PL,L1Q
Trans MOSFET N-CH Si 45V 139A 8-Pin TSON Advance
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Von 0,2976 € bis 0,3225 €
pro Stück
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single Quad Drain Triple Source | Enhancement | 1 | 45 | ±20 | 2670 | 139 | 2.8@10V | 19@4.5V|39@10V | 39 | 2450@22.5V | 8 | TSON Advance | SON | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SB1457(TPE6,F) Trans Darlington PNP 100V 2A T/R |
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Toshiba | Darlington BJT | PNP | Single | 100 | 1 | 2 | 2@1mA@1A | 2000@1A@2V | Tape and Reel | 3 | TO-92 Mod | TO | Unknown | No | No | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SSM3J36FS,LF(B
Trans MOSFET P-CH Si 20V 0.33A 3-Pin SSM
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Bestand
12.000
0,0188 €
pro Stück
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Toshiba | MOSFETs | Small Signal | Si | P | Single | Enhancement | 1 | 20 | ±8 | 150 | 0.33 | 1310@4.5V | 1.2@4V | 43@10V | 3 | SSM | No | No | No | EAR99 | No |