Toshiba Diodes, Transistors and Thyristors
| Teile-Nr. | Preis | Bestand | Hersteller | Kategorie | Type | Material | Category | Maximum Rate of Rise of On-State Current - (A/us) | Maximum Rate of Rise of Off-State Voltage - (V/us) | Frequency Band | Channel Type | Maximum Reverse Voltage - (V) | Maximum Gate Trigger Voltage - (V) | Configuration | Channel Mode | Typical Zener Voltage - (V) | Peak Reverse Repetitive Voltage - (V) | Number of Elements per Chip | Maximum Gate Emitter Voltage - (V) | Maximum Collector-Emitter Voltage - (V) | Maximum Base-Emitter Saturation Voltage - (V) | Zener Voltage Tolerance | Surge Current Rating - (A) | Peak On-State Voltage - (V) | Maximum Reverse Current - (uA) | Maximum Gate Trigger Current - (mA) | Maximum Continuous Forward Current - (A) | Maximum Continuous DC Collector Current - (mA) | Maximum Collector-Base Voltage - (V) | Maximum Drain-Gate Voltage - (V) | Typical Input Resistance - (kOhm) | Test Current - (mA) | Rated Average On-State Current - (A) | Peak Non-Repetitive Forward Surge Current - (A) | Maximum Series Resistance @ Maximum IF - (Ohm) | Maximum Power Dissipation - (mW) | Maximum Holding Current - (mA) | Maximum Drain-Source Voltage - (V) | Maximum Continuous Drain Current - (mA) | Maximum Base-Emitter Voltage - (V) | Typical Resistor Ratio | Repetitive Peak Reverse Voltage - (V) | Maximum Reverse Leakage Current - (uA) | Maximum Gate-Source Voltage - (V) | Maximum Forward Voltage - (V) | Maximum DC Collector Current - (A) | Peak Reverse Current - (uA) | Operational Bias Conditions | Minimum Diode Capacitance - (pF) | Maximum Junction Ambient Thermal Resistance | Maximum Gate Threshold Voltage - (V) | Maximum Gate Peak Inverse Voltage - (V) | Maximum Diode Capacitance - (pF) | Repetitive Peak Forward Blocking Voltage - (V) | Maximum Zener Impedance - (Ohm) | Maximum Power Dissipation @ 25C - (mW) | Peak Reverse Recovery Time - (ns) | Minimum DC Current Gain Range | Minimum DC Current Gain | Maximum Drain-Source Resistance - (mOhm) | Typical Gate Charge @ Vgs - (nC) | RMS On-State Current - (A) | Maximum Junction Case Thermal Resistance | Typical Input Capacitance - (pF) | Typical Gate Charge @ 10V - (nC) | Repetitive Peak Off-State Current - (mA) | Maximum Transition Frequency - (MHz) | Typical Output Capacitance - (pF) | Typical Input Capacitance @ Vds - (pF) | Maximum Output Power - (W) | Maximum Collector-Emitter Saturation Voltage - (V) | Maximum Frequency - (MHz) | Typical Power Gain - (dB) | Typical 3rd Order Intercept Point - (dBm) | Maximum Noise Figure - (dB) | Maximum Turn-On Time - (ns) | Typical Drain-Source Resistance @ 25°C - (mOhm) | Process Technology | Packaging | Pin Count | Supplier Package | Standard Package Name | CECC Qualified | ESD Protection | Military | AEC Qualified | AEC Qualified Number | Auto motive | P PAP | ECCN Code | SVHC | SVHC Exceeds Threshold |
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TK8P25DA,RQ(S
Trans MOSFET N-CH Si 250V 7.5A 3-Pin(2+Tab) DPAK
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Toshiba | MOSFETs | Si | Power MOSFET | N | Single | Enhancement | 1 | 55000 | 250 | 7.5 | ±20 | 3.5 | 500@10V | 16@10V | 16 | 550@100V | 3 | DPAK | TO | No | Unknown | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SA1430-C(F) Trans GP BJT PNP 10V 2A 1000mW 3-Pin MSTM |
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Toshiba | GP BJT | PNP | Si | Bipolar Small Signal | Single | 1 | 10 | 20 | 1000 | 6 | 2 | 300 to 500 | 300@0.5A@1V | 0.5@50mA@2A | 3 | MSTM | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
RN2114MFV(TPL3)
Trans Digital BJT PNP 50V 0.1A 150mW 3-Pin VESM T/R
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Toshiba | Digital-BJT | PNP | Single | 50 | 0.1 | 1 | 150 | 0.1 | 50@10mA@5V | 0.3@0.5mA@5mA | Tape and Reel | 3 | VESM | SOT | No | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TRS6V65H,LQ
Diode Schottky SiC 650V 18A 4-Pin DFN EP T/R
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Toshiba | Gleichrichter | Schottky Diode | SiC | Single Dual Anode | 650 | 18 | 310 | 60000 | 1.35@6A | 70 | Tape and Reel | 4 | DFN EP | DFN | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
GT30J121(Q)
Trans IGBT Chip N-CH 600V 30A 170W 3-Pin(3+Tab) TO-3PN
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Bestand
100
2,0054 €
pro Stück
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Toshiba | IGBT-Chip | N | Single | ±20 | 600 | 30 | 170 | 3 | TO-3PN | TO | No | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SSM3J35AMFV,L3F(B
Trans MOSFET P-CH Si 20V 0.25A 3-Pin VESM
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Toshiba | MOSFETs | Si | Small Signal | P | Single | Enhancement | 1 | 500 | 20 | 0.25 | ±10 | 1400@4.5V | 21@10V | 3 | VESM | SOT | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SSM3K127TU,LF
Trans MOSFET N-CH Si 30V 2A 3-Pin UFM T/R Automotive AEC-Q101
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Von 0,0823 € bis 0,0905 €
pro Stück
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Toshiba | MOSFETs | Si | Small Signal | N | Single | Enhancement | 1 | 800 | 30 | 2 | ±12 | 1 | 123@4V | 1.5@4V | 123@15V | Tape and Reel | 3 | UFM | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
RN2314(TE85L,F)
Trans Digital BJT PNP 50V 0.1A 100mW 3-Pin USM T/R
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Toshiba | Digital-BJT | PNP | Single | 50 | 0.1 | 1 | 100 | 0.1 | 50@10mA@5V | 0.3@0.25mA@5mA | Tape and Reel | 3 | USM | No | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TRS12N65FB,S1Q
Diode Schottky SiC 650V 12A 3-Pin(3+Tab) TO-247 Tube
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Von 2,531 € bis 2,7712 €
pro Stück
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Toshiba | Gleichrichter | Schottky Diode | SiC | Dual Common Cathode | 650 | 12 | 104 | 136000 | 1.6@6A | 30 | Tube | 3 | TO-247 | TO | Unknown | No | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TK100A08N1,S4X(S
Trans MOSFET N-CH Si 80V 214A 3-Pin(3+Tab) TO-220SIS Magazine
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Toshiba | MOSFETs | Si | Power MOSFET | N | Single | Enhancement | 1 | 45000 | 80 | 214 | ±20 | 4 | 3.2@10V | 130@10V | 130 | 9000@40V | Magazine | 3 | TO-220SIS | TO | No | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
02DZ4.7-Y(TPH3,F)
Zener Diode Single 4.645V 2.5% 120Ohm 200mW 2-Pin USC T/R
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Toshiba | Zener | Voltage Regulator | Single | 4.645 | 2.5% | 5 | 200 | 5 | 120 | 200 | Tape and Reel | 2 | USC | SOD | No | Unknown | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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TK3A65DA(STA4,QM)
Trans MOSFET N-CH Si 650V 2.5A 3-Pin(3+Tab) TO-220SIS
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Von 0,5033 € bis 0,5454 €
pro Stück
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Toshiba | MOSFETs | Si | Power MOSFET | N | Single | Enhancement | 1 | 35000 | 650 | 2.5 | ±30 | 2510@10V | 11@10V | 11 | 490@25V | 3 | TO-220SIS | TO | No | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SSM3K16FV,L3F(B
Trans MOSFET N-CH Si 20V 0.1A 3-Pin VESM
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Toshiba | MOSFETs | Si | Small Signal | N | Single | Enhancement | 1 | 150 | 20 | 0.1 | ±10 | 3000@4V | 9.3@3V | 3 | VESM | SOT | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TK7Q60W,S1VQ(S
Trans MOSFET N-CH Si 600V 7A 3-Pin(3+Tab) IPAK
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Toshiba | MOSFETs | Si | Power MOSFET | N | Single | Enhancement | 1 | 60000 | 600 | 7 | ±30 | 600@10V | 15@10V | 490@300V | 3 | IPAK | TO | No | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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TRS16N65FB,S1Q
Diode Schottky SiC 650V 16A 3-Pin(3+Tab) TO-247 Tube
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Von 3,1064 € bis 3,4009 €
pro Stück
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Toshiba | Gleichrichter | Schottky Diode | SiC | Dual Common Cathode | 650 | 16 | 130 | 166000 | 1.6@8A | 40 | Tube | 3 | TO-247 | TO | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SC5108-Y(TE85L,F)
Trans RF BJT NPN 10V 0.03A 3-Pin SSM T/R
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Toshiba | HF-BJT | NPN | Si | Single | 1 | 10 | 20 | 100 | 3 | 0.03 | 5V/5mA | 120 to 200 | 120@5mA@5V | 6000(Typ) | 0.7 | 11 | Tape and Reel | 3 | SSM | No | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
CRS10I40B(TE85L,QM
Diode Schottky 40V 1A 2-Pin S-FLAT T/R
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Von 0,1052 € bis 0,1158 €
pro Stück
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Toshiba | Gleichrichter | Schottky Diode | Single | 40 | 1 | 25 | 0.45 | 100 | Tape and Reel | 2 | S-FLAT | No | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TJ30S06M3L,LXHQ
Trans MOSFET P-CH Si 60V 30A 3-Pin(2+Tab) DPAK+ T/R Automotive AEC-Q101
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Toshiba | MOSFETs | Si | Power MOSFET | P | Single | Enhancement | 1 | 68000 | 60 | 30 | 10 | 3 | 21.8@10V | 80@10V | 80 | 3950@10V | Tape and Reel | 3 | DPAK+ | TO | Yes | AEC-Q101 | Yes | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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CUS521,H3F(B
Diode Small Signal Schottky 0.2A 2-Pin USC
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Toshiba | Gleichrichter | 2 | USC | SOD | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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GT30J341,Q(O
Trans IGBT Chip N-CH 600V 59A 230W 3-Pin(3+Tab) TO-3PN
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Toshiba | IGBT-Chip | N | Single | ±25 | 600 | 59 | 230 | 3 | TO-3PN | TO | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SC752GTM-O(F)
Trans GP BJT NPN 15V 0.2A 400mW 3-Pin TO-92
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Toshiba | GP BJT | NPN | Si | Bipolar Small Signal | Single | 1 | 15 | 1@1mA@20mA | 40 | 400 | 5 | 0.2 | 50 to 120 | 70@100mA@1V | 0.3@1mA@20mA | 3 | TO-92 | TO | Unknown | No | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
DSR01S30SL,L3F(B
Diode Small Signal Schottky 0.1A 2-Pin SL
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Toshiba | Gleichrichter | 2 | SL | SOD | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
1SS383(TE85L,F)
Diode Small Signal Schottky 45V 0.1A 4-Pin USQ T/R
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Toshiba | Gleichrichter | Small Signal Schottky Diode | Dual Parallel | 45 | 0.1 | 1 | 100 | 0.6 | 5 | Tape and Reel | 4 | USQ | SOT | No | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SD2206,T6F(J) Trans Darlington NPN 100V 2A 900mW 3-Pin TO-92 Mod |
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Toshiba | Darlington BJT | NPN | Single | 1 | 100 | 2@1mA@1A | 2 | 100 | 900 | 8 | 2000@1A@2V | 1.5@1mA@1A | 3 | TO-92 Mod | TO | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
1ZM50(Q)
Zener Diode Silicon Diffused Junction Type
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Toshiba | Zener | 2 | DO-15 | DO | No | Unknown | No | No | No | No |