Toshiba Diodes, Transistors and Thyristors
| Teile-Nr. | Preis | Bestand | Hersteller | Kategorie | Type | Maximum Rate of Rise of Off-State Voltage - (V/us) | Category | Maximum Rate of Rise of On-State Current - (A/us) | Material | Frequency Band | Channel Type | Maximum Gate Trigger Voltage - (V) | Configuration | Channel Mode | Typical Zener Voltage - (V) | Repetitive Peak Reverse Voltage - (V) | Peak Reverse Repetitive Voltage - (V) | Maximum Reverse Voltage - (V) | Maximum Gate Trigger Current - (mA) | Maximum Gate Emitter Voltage - (V) | Maximum Collector-Emitter Voltage - (V) | Zener Voltage Tolerance | Surge Current Rating - (A) | Maximum Reverse Current - (uA) | Maximum Continuous Forward Current - (A) | Maximum Collector-Base Voltage - (V) | Number of Elements per Chip | Minimum Tuning Ratio | Maximum Holding Current - (mA) | Maximum Drain-Gate Voltage - (V) | Maximum Continuous DC Collector Current - (A) | Maximum Base-Emitter Voltage - (V) | Typical Input Resistance - (kOhm) | Tuning Ratio Test Condition | Test Current - (mA) | Peak Non-Repetitive Forward Surge Current - (A) | Maximum Series Resistance @ Maximum IF - (Ohm) | Maximum Forward Voltage - (V) | Maximum Drain-Source Voltage - (V) | Maximum Base-Emitter Saturation Voltage - (V) | Typical Resistor Ratio | Peak Reverse Current - (uA) | Maximum Reverse Leakage Current - (uA) | Maximum Gate-Source Voltage - (V) | Maximum DC Collector Current - (A) | Peak On-State Voltage - (V) | Operational Bias Conditions | Minimum Diode Capacitance - (pF) | Maximum Junction Ambient Thermal Resistance | Maximum Gate Threshold Voltage - (V) | Maximum Gate Peak Inverse Voltage - (V) | Maximum Zener Impedance - (Ohm) | Maximum Power Dissipation - (mW) | Maximum Power Dissipation @ 25C - (mW) | Maximum Diode Capacitance - (pF) | Maximum Continuous Drain Current - (A) | RMS On-State Current - (A) | Repetitive Peak Forward Blocking Voltage - (V) | Rated Average On-State Current - (A) | Peak Reverse Recovery Time - (ns) | Minimum DC Current Gain Range | Minimum DC Current Gain | Maximum Drain-Source Resistance - (mOhm) | Typical Gate Charge @ Vgs - (nC) | Repetitive Peak Off-State Current - (mA) | Maximum Junction Case Thermal Resistance | Typical Gate Charge @ 10V - (nC) | Typical Output Capacitance - (pF) | Typical Input Capacitance @ Vds - (pF) | Typical Power Gain - (dB) | Maximum Output Power - (W) | Maximum Collector-Emitter Saturation Voltage - (V) | Maximum Frequency - (MHz) | Typical 3rd Order Intercept Point - (dBm) | Maximum Transition Frequency - (MHz) | Maximum Noise Figure - (dB) | Typical Drain-Source Resistance @ 25°C - (mOhm) | Process Technology | Packaging | Pin Count | Supplier Package | Standard Package Name | CECC Qualified | ESD Protection | Military | AEC Qualified | AEC Qualified Number | Auto motive | P PAP | ECCN Code | SVHC | SVHC Exceeds Threshold |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| SSM6L61NU,LF Trans MOSFET N/P-CH Si 20V 4A Automotive AEC-Q101 6-Pin UDFN EP T/R |
Von 0,116 € bis 0,1257 €
pro Stück
|
Toshiba | MOSFETs | Power MOSFET | Si | N|P | Dual | Enhancement | 2 | 20 | ±8@N Channel|±12@P Channel | 1@N Channel|1.2@P Channel | 2000 | 4 | 33@4.5V@N Channel|45@10V@P Channel | 3.6@4.5V@N Channel|6.74@4.5V@P Channel | 410@10V@N Channel|480@10V@P Channel | Tape and Reel | 6 | UDFN EP | DFN | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SJ668(Q)
Trans MOSFET P-CH Si 60V 5A 3-Pin(2+Tab) New PW-Mold
|
|
Toshiba | MOSFETs | Power MOSFET | Si | P | Single | Enhancement | 1 | 60 | ±20 | 20000 | 5 | 170@10V | 15@10V | 15 | 700@10V | 3 | New PW-Mold | TO | No | Unknown | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
GT50J341,Q(O
Trans IGBT Chip N-CH 600V 50A 3-Pin(3+Tab) TO-3PN
|
|
Toshiba | IGBT-Chip | 3 | TO-3PN | TO | No | No | No | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
CMH05(T2L,TEM,Q)
Diode Switching Si 400V 1A 2-Pin M-FLAT T/R
|
|
Toshiba | Gleichrichter | Switching Diode | Si | Single | 400 | 1 | 20 | 1.3 | 10 | 210°C/W | 50 | Tape and Reel | 2 | M-FLAT | No | No | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
CRS11(TE85L,Q)
Diode Schottky 30V 1A 2-Pin S-FLAT T/R
|
|
Toshiba | Gleichrichter | Schottky Diode | Single | 30 | 1 | 20 | 0.36 | 1500 | Tape and Reel | 2 | S-FLAT | No | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SSM6J414TU,LF
Trans MOSFET P-CH Si 20V 6A 6-Pin UF T/R
|
Von 0,1084 € bis 0,1182 €
pro Stück
|
Toshiba | MOSFETs | Power MOSFET | Si | P | Single Quad Drain | Enhancement | 1 | 20 | ±8 | 1 | 1000 | 6 | 22.5@4.5V | 23.1@4.5V | 1650@10V | Tape and Reel | 6 | UF | No | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
1SV284(TPH3,F)
Varactor Diode Single 10V 15pF 2-Pin ESC T/R
|
|
Toshiba | Varaktors | VCO | UHF|VHF | Single | 10 | 0.003 | 1.8 | 1V/4V | 15@1V | Tape and Reel | 2 | ESC | SOD | No | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TK28N65W,S1F
Trans MOSFET N-CH Si 650V 27.6A 3-Pin(3+Tab) TO-247 Tube
|
Von 3,1975 € bis 3,4311 €
pro Stück
|
Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 650 | ±30 | 3.5 | 230000 | 27.6 | 110@10V | 75@10V | 75 | 3000@300V | Tube | 3 | TO-247 | TO | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SSM3K7002BFS,LF(T
Trans MOSFET N-CH Si 60V 0.2A 3-Pin SSM T/R
|
|
Toshiba | MOSFETs | Small Signal | Si | N | Single | Enhancement | 1 | 60 | ±20 | 150 | 0.2 | 2100@10V | 17@25V | Tape and Reel | 3 | SSM | No | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
2SK3936(Q)
Trans MOSFET N-CH Si 500V 23A 3-Pin(3+Tab) TO-3PN
|
|
Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 500 | ±30 | 150000 | 23 | 250@10V | 60@10V | 60 | 4250@25V | 3 | TO-3PN | TO | No | No | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TK33S10N1Z,LXHQ
Trans MOSFET N-CH Si 100V 33A 3-Pin(2+Tab) DPAK+ T/R Automotive AEC-Q101
|
|
Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 100 | ±20 | 4 | 125000 | 33 | 9.7@10V | 28@10V | 28 | 2050@10V | Tape and Reel | 3 | DPAK+ | TO | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SC4116-Y,LF(B
Trans GP BJT NPN 50V 0.15A 100mW 3-Pin USM
|
|
Toshiba | GP BJT | NPN | Bipolar Small Signal | Si | Single | 50 | 60 | 1 | 5 | 0.15 | 100 | 120 to 200 | 120@2mA@6V | 0.25@10mA@100mA | 80 | 3 | USM | No | No | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
CMZB51(T2L,TEM,Q)
Diode Zener Single 51V 10% 1000mW 2-Pin M-FLAT
|
|
Toshiba | Zener | Voltage Regulator | Single | 51 | 10% | 6 | 10 | 65 | 1000 | 2 | M-FLAT | No | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SK3236(F)
Trans MOSFET N-CH Si 60V 35A 3-Pin(3+Tab) TO-220NIS
|
|
Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 60 | ±20 | 30000 | 35 | 20@10V | 52@10V | 52 | 2300@10V | 3 | TO-220NIS | TO | No | No | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1ZC24(Q) Zener Diode Single 24V 10% 30Ohm 1000mW 2-Pin DO-41SS |
|
Toshiba | Zener | Voltage Regulator | Single | 24 | 10% | 10 | 10 | 30 | 1000 | 1000 | 2 | DO-41SS | DO | No | Unknown | No | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
TK12A10K3(Q)
Silicon N Channel MOSFET
|
|
Toshiba | MOSFETs | 3 | TO-220SIS | TO | No | No | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
1SS226(TE85R,F)
Diode Switching Si 85V 0.1A 3-Pin S-Mini T/R Automotive AEC-Q101
|
|
Toshiba | Gleichrichter | Switching Diode | Si | Dual Series | 85 | 0.1 | 2 | 1.2 | 0.5 | 150 | 3 | 4 | Tape and Reel | 3 | S-Mini | SOT | No | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
TK5A50D(Q)
Trans MOSFET N-CH Si 500V 5A 3-Pin(3+Tab) TO-220SIS
|
|
Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 500 | ±30 | 35000 | 5 | 1500@10V | 11@10V | 11 | 490@25V | 3 | TO-220SIS | TO | No | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SSM3K2615R,LF(B
Trans MOSFET N-CH Si 60V 2A Automotive AEC-Q101 3-Pin SOT-23F T/R
|
|
Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 60 | ±20 | 2 | 2000 | 2 | 300@10V | 6@10V | 6 | 150@10V | Tape and Reel | 3 | SOT-23F | SOT | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SSM3J15F,LF
Trans MOSFET P-CH Si 30V 0.1A 3-Pin S-Mini T/R Automotive AEC-Q101
|
Von 0,023 € bis 0,0251 €
pro Stück
|
Toshiba | MOSFETs | Small Signal | Si | P | Single | Enhancement | 1 | 30 | ±20 | 1.7 | 200 | 0.1 | 12000@4V | 9.1@3V | Tape and Reel | 3 | S-Mini | SOT | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SM3G45(Q)
TRIAC 400V 33A 3-Pin(3+Tab) TO-220AB
|
|
Toshiba | TRIACs | 100(Min) | 50 | 1.5 | 400 | 20 | 30 | 1.5@4.5A | 400 | 0.02 | 3 | TO-220AB | TO | No | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
2SC4738-Y,LF(B
Trans GP BJT NPN 50V 0.15A 120mW 3-Pin SSM Automotive AEC-Q101
|
|
Toshiba | GP BJT | NPN | Bipolar Small Signal | Si | Single | 50 | 60 | 1 | 5 | 0.15 | 120 | 120 to 200 | 120@2mA@6V | 0.25@10mA@100mA | 3 | SSM | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
RN1707(TE85L,F)
Trans Digital BJT NPN 50V 0.1A 200mW 5-Pin USV T/R
|
|
Toshiba | Digital-BJT | NPN | Dual Common Emitter | 50 | 0.1 | 10 | 0.213 | 200 | 80@10mA@5V | 0.3@0.25mA@5mA | Tape and Reel | 5 | USV | SOT | No | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TK380P60Y,RQ
Trans MOSFET N-CH Si 600V 9.7A 3-Pin(2+Tab) DPAK T/R
|
Von 0,6938 € bis 0,7411 €
pro Stück
|
Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 600 | ±30 | 4 | 80000 | 9.7 | 380@10V | 20@10V | 20 | 590@300V | Tape and Reel | 3 | DPAK | TO | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
2SK1828(TE85L,F)
Trans MOSFET N-CH Si 20V 0.05A 3-Pin S-Mini T/R
|
|
Toshiba | MOSFETs | Small Signal | Si | N | Single | Enhancement | 1 | 20 | 10 | 200 | 0.05 | 40000@2.5V | 5.5@3V | Tape and Reel | 3 | S-Mini | SOT | No | No | No | No | No | EAR99 | No |