Toshiba Diodes, Transistors and Thyristors
| Teile-Nr. | Preis | Bestand | Hersteller | Kategorie | Type | Maximum Rate of Rise of Off-State Voltage - (V/us) | Category | Maximum Rate of Rise of On-State Current - (A/us) | Material | Frequency Band | Channel Type | Maximum Gate Trigger Voltage - (V) | Configuration | Channel Mode | Typical Zener Voltage - (V) | Repetitive Peak Reverse Voltage - (V) | Peak Reverse Repetitive Voltage - (V) | Maximum Reverse Voltage - (V) | Maximum Gate Trigger Current - (mA) | Maximum Gate Emitter Voltage - (V) | Maximum Collector-Emitter Voltage - (V) | Zener Voltage Tolerance | Surge Current Rating - (A) | Maximum Reverse Current - (uA) | Maximum Continuous Forward Current - (A) | Maximum Collector-Base Voltage - (V) | Number of Elements per Chip | Minimum Tuning Ratio | Maximum Holding Current - (mA) | Maximum Drain-Gate Voltage - (V) | Maximum Continuous DC Collector Current - (A) | Maximum Base-Emitter Voltage - (V) | Typical Input Resistance - (kOhm) | Tuning Ratio Test Condition | Test Current - (mA) | Peak Non-Repetitive Forward Surge Current - (A) | Maximum Series Resistance @ Maximum IF - (Ohm) | Maximum Forward Voltage - (V) | Maximum Drain-Source Voltage - (V) | Maximum Base-Emitter Saturation Voltage - (V) | Typical Resistor Ratio | Peak Reverse Current - (uA) | Maximum Reverse Leakage Current - (uA) | Maximum Gate-Source Voltage - (V) | Maximum DC Collector Current - (A) | Peak On-State Voltage - (V) | Operational Bias Conditions | Minimum Diode Capacitance - (pF) | Maximum Junction Ambient Thermal Resistance | Maximum Gate Threshold Voltage - (V) | Maximum Gate Peak Inverse Voltage - (V) | Maximum Zener Impedance - (Ohm) | Maximum Power Dissipation - (mW) | Maximum Power Dissipation @ 25C - (mW) | Maximum Diode Capacitance - (pF) | Maximum Continuous Drain Current - (A) | RMS On-State Current - (A) | Repetitive Peak Forward Blocking Voltage - (V) | Rated Average On-State Current - (A) | Peak Reverse Recovery Time - (ns) | Minimum DC Current Gain Range | Minimum DC Current Gain | Maximum Drain-Source Resistance - (mOhm) | Typical Gate Charge @ Vgs - (nC) | Repetitive Peak Off-State Current - (mA) | Maximum Junction Case Thermal Resistance | Typical Gate Charge @ 10V - (nC) | Typical Output Capacitance - (pF) | Typical Input Capacitance @ Vds - (pF) | Typical Power Gain - (dB) | Maximum Output Power - (W) | Maximum Collector-Emitter Saturation Voltage - (V) | Maximum Frequency - (MHz) | Typical 3rd Order Intercept Point - (dBm) | Maximum Transition Frequency - (MHz) | Maximum Noise Figure - (dB) | Typical Drain-Source Resistance @ 25°C - (mOhm) | Process Technology | Packaging | Pin Count | Supplier Package | Standard Package Name | CECC Qualified | ESD Protection | Military | AEC Qualified | AEC Qualified Number | Auto motive | P PAP | ECCN Code | SVHC | SVHC Exceeds Threshold |
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RN2302(F)
Trans Digital BJT PNP 50V 0.1A 100mW 3-Pin USM Automotive AEC-Q101
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Toshiba | Digital-BJT | PNP | Single | 50 | 0.1 | 10 | 1 | 100 | 50@10mA@5V | 0.3@0.25mA@5mA | 3 | USM | No | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MT3S111(TE85L,F)
Trans RF BJT NPN 6V 0.1A 160mW 3-Pin S-Mini T/R
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Toshiba | HF-BJT | NPN | SiGe | Single | 6 | 1 | 0.6 | 0.1 | 5V/30mA | 160 | 200 to 300 | 200@50mA@5V | 1.45 | 32 | 11500(Typ) | 1.2 | Tape and Reel | 3 | S-Mini | SOT | No | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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RN1416,LF
Trans Digital BJT NPN 50V 0.1A 200mW 3-Pin S-Mini T/R Automotive AEC-Q101
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Von 0,0176 € bis 0,0192 €
pro Stück
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Toshiba | Digital-BJT | NPN | Single | 50 | 0.1 | 4.7 | 0.47 | 200 | 50@10mA@5V | 0.3@0.25mA@5mA | Tape and Reel | 3 | S-Mini | SOT | No | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TJ10S04M3L,LXHQ
Trans MOSFET P-CH Si 40V 10A 3-Pin(2+Tab) DPAK+ T/R Automotive AEC-Q101
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Toshiba | MOSFETs | Power MOSFET | Si | P | Single | Enhancement | 1 | 40 | 10 | 3 | 27000 | 10 | 44@10V | 19@10V | 19 | 930@10V | Tape and Reel | 3 | DPAK+ | TO | No | Yes | AEC-Q101 | Yes | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SK2865(TE16L1,NQ)
Trans MOSFET N-CH Si 600V 2A 3-Pin(2+Tab) New PW-Mold T/R
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 600 | ±30 | 20000 | 2 | 5000@10V | 9@10V | 9 | 380@10V | Tape and Reel | 3 | New PW-Mold | TO | No | No | No | No | No | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
RN1501(TE85L,F)
Trans Digital BJT NPN 50V 0.1A 300mW 5-Pin SMV T/R
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Toshiba | Digital-BJT | NPN | Dual Common Emitter | 50 | 0.1 | 4.7 | 1 | 300 | 30@10mA@5V | 0.3@0.25mA@5mA | Tape and Reel | 5 | SMV | SOT | No | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
U20GL2C48A(Q)
Diode Switching 400V 20A 3-Pin(2+Tab) TO-220SM
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Toshiba | Gleichrichter | Switching Diode | Dual Common Cathode | 400 | 20 | 110 | 1.8@10A | 50 | 35 | 3 | TO-220SM | TO | No | No | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
RSF05G1-5P(N,F)
Thyristor SCR 400V 10A 3-Pin TO-92
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Toshiba | Silicon Controlled Rectifiers - SCRs | 40(Typ) | 10 | 0.8 | 400 | 1 | 2 | 1.5@1A | 5 | 400 | 0.5 | 0.01 | 3 | TO-92 | TO | No | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
HN1C01FU-GR,LF
Trans GP BJT NPN 50V 0.15A 200mW 6-Pin US T/R Automotive AEC-Q101
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Von 0,0338 € bis 0,0369 €
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Toshiba | GP BJT | NPN | Bipolar Small Signal | Si | Dual | 50 | 60 | 2 | 5 | 0.15 | 200 | 200 to 300 | 200@2mA@6V | 0.25@10mA@100mA | Tape and Reel | 6 | US | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TK20G60W,RVQ(S
Trans MOSFET N-CH Si 600V 20A 3-Pin(2+Tab) D2PAK
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 600 | ±30 | 3.7 | 165000 | 20 | 155@10V | 48@10V | 48 | 1680@300V | 3 | D2PAK | TO | No | No | No | No | No | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TK7A80W,S4X
Trans MOSFET N-CH Si 800V 6.5A 3-Pin(3+Tab) TO-220SIS Tube
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Von 1,3295 € bis 1,4171 €
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 800 | ±20 | 4 | 35000 | 6.5 | 950@10V | 13@10V | 13 | 700@300V | Tube | 3 | TO-220SIS | TO | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
CMS30I30A(TE12L,Q)
Diode Schottky 30V 3A 2-Pin M-FLAT T/R
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Toshiba | Gleichrichter | Schottky Diode | Single | 30 | 3 | 30 | 0.49 | 100 | Tape and Reel | 2 | M-FLAT | No | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SSM6N48FU,LF
Trans MOSFET N-CH Si 30V 0.1A 6-Pin US T/R
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Von 0,0542 € bis 0,0591 €
pro Stück
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Toshiba | MOSFETs | Small Signal | Si | N | Dual | Enhancement | 2 | 30 | ±20 | 300 | 0.1 | 3200@4V | 15.1@3V | Tape and Reel | 6 | US | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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1SS337(TE85L,F)
Diode Switching 85V 0.2A 3-Pin S-Mini T/R
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Toshiba | Gleichrichter | Switching Diode | Dual Common Cathode | 85 | 0.2 | 6 | 1.2 | 0.5 | 150 | 20 | Tape and Reel | 3 | S-Mini | SOT | No | No | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SK2604(F)
Trans MOSFET N-CH Si 800V 5A 3-Pin(3+Tab) TO-3PN
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 800 | ±30 | 125000 | 5 | 2200@10V | 34@10V | 34 | 1080@25V | 3 | TO-3PN | TO | No | No | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
RN2905FE,LF(CT
Trans Digital BJT PNP 50V 0.1A 100mW 6-Pin ES T/R
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Von 0,0271 € bis 0,0295 €
pro Stück
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Toshiba | Digital-BJT | PNP | Dual | 50 | 0.1 | 2.2 | 0.0468 | 100 | 80@10mA@5V | 0.3@0.25mA@5mA | Tape and Reel | 6 | ES | No | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SSM3J09FU,LF
Trans MOSFET P-CH Si 30V 0.2A 3-Pin USM T/R
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Toshiba | MOSFETs | Small Signal | Si | P | Single | Enhancement | 1 | 30 | ±20 | 150 | 0.2 | 2700@10V | 22@5V | 4000@3.3V|3300@4V|2100@10V | Tape and Reel | 3 | USM | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
CRG02(TE85L,Q)
Diode Si 400V 0.7A 2-Pin S-FLAT T/R
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Toshiba | Gleichrichter | Si | Single | 400 | 0.7 | 16.5 | 1.1 | 10 | Tape and Reel | 2 | S-FLAT | No | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
CTS521,L3F
Diode Small Signal Schottky Si 0.2A 2-Pin CST T/R
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Von 0,0204 € bis 0,0222 €
pro Stück
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Toshiba | Gleichrichter | Small Signal Schottky Diode | Si | Single | 0.2 | 1 | 0.5@0.2A | 30 | 150 | 25(Typ) | Tape and Reel | 2 | CST | SOD | No | Unknown | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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CMF05(TE12L,Q)
Diode Switching 1KV 0.5A 2-Pin M-FLAT T/R
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Toshiba | Gleichrichter | Switching Diode | Single | 1000 | 0.5 | 10 | 2.7 | 50@800V | 100 | Tape and Reel | 2 | M-FLAT | No | No | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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RN1414,LF
Trans Digital BJT NPN 50V 0.1A 200mW 3-Pin S-Mini T/R Automotive AEC-Q101
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Von 0,0176 € bis 0,0192 €
pro Stück
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Toshiba | Digital-BJT | NPN | Single | 50 | 0.1 | 1 | 0.1 | 200 | 50@10mA@5V | 0.3@0.25mA@5mA | Tape and Reel | 3 | S-Mini | SOT | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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TK750A60F,S4X
Trans MOSFET N-CH Si 600V 10A 3-Pin(3+Tab) TO-220SIS Tube
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Von 0,8094 € bis 0,8647 €
pro Stück
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 600 | ±30 | 40000 | 10 | 750@10V | 30@10V | 30 | 1130@300V | Tube | 3 | TO-220SIS | TO | No | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
1SS406,H3F
Diode Small Signal Schottky 25V 0.1A 2-Pin USC T/R Automotive AEC-Q101
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Von 0,0204 € bis 0,0222 €
pro Stück
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Toshiba | Gleichrichter | Small Signal Schottky Diode | Single | 25 | 0.1 | 1 | 0.55@0.05A | 0.5 | 200 | Tape and Reel | 2 | USC | SOD | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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2SK2350(Q)
Trans MOSFET N-CH Si 200V 8.5A 3-Pin(3+Tab) TO-220NIS
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 200 | ±20 | 30000 | 8.5 | 400@10V | 17@10V | 17 | 700@10V | 3 | TO-220NIS | TO | No | No | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| U1FWJ44N(TE12L,Q) Diode Schottky 30V 1A 2-Pin I-FLAT T/R |
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Toshiba | Gleichrichter | Schottky Diode | Single | 30 | 1 | 25 | 0.37 | 1500 | Tape and Reel | 2 | I-FLAT | No | No | No | No | No | EAR99 |