Toshiba Diodes, Transistors and Thyristors
| Teile-Nr. | Preis | Bestand | Hersteller | Kategorie | Type | Maximum Rate of Rise of Off-State Voltage - (V/us) | Category | Maximum Rate of Rise of On-State Current - (A/us) | Material | Frequency Band | Channel Type | Maximum Gate Trigger Voltage - (V) | Configuration | Channel Mode | Typical Zener Voltage - (V) | Repetitive Peak Reverse Voltage - (V) | Peak Reverse Repetitive Voltage - (V) | Maximum Reverse Voltage - (V) | Maximum Gate Trigger Current - (mA) | Maximum Gate Emitter Voltage - (V) | Maximum Collector-Emitter Voltage - (V) | Zener Voltage Tolerance | Surge Current Rating - (A) | Maximum Reverse Current - (uA) | Maximum Continuous Forward Current - (A) | Maximum Collector-Base Voltage - (V) | Number of Elements per Chip | Minimum Tuning Ratio | Maximum Holding Current - (mA) | Maximum Drain-Gate Voltage - (V) | Maximum Continuous DC Collector Current - (A) | Maximum Base-Emitter Voltage - (V) | Typical Input Resistance - (kOhm) | Tuning Ratio Test Condition | Test Current - (mA) | Peak Non-Repetitive Forward Surge Current - (A) | Maximum Series Resistance @ Maximum IF - (Ohm) | Maximum Forward Voltage - (V) | Maximum Drain-Source Voltage - (V) | Maximum Base-Emitter Saturation Voltage - (V) | Typical Resistor Ratio | Peak Reverse Current - (uA) | Maximum Reverse Leakage Current - (uA) | Maximum Gate-Source Voltage - (V) | Maximum DC Collector Current - (A) | Peak On-State Voltage - (V) | Operational Bias Conditions | Minimum Diode Capacitance - (pF) | Maximum Junction Ambient Thermal Resistance | Maximum Gate Threshold Voltage - (V) | Maximum Gate Peak Inverse Voltage - (V) | Maximum Zener Impedance - (Ohm) | Maximum Power Dissipation - (mW) | Maximum Power Dissipation @ 25C - (mW) | Maximum Diode Capacitance - (pF) | Maximum Continuous Drain Current - (A) | RMS On-State Current - (A) | Repetitive Peak Forward Blocking Voltage - (V) | Rated Average On-State Current - (A) | Peak Reverse Recovery Time - (ns) | Minimum DC Current Gain Range | Minimum DC Current Gain | Maximum Drain-Source Resistance - (mOhm) | Typical Gate Charge @ Vgs - (nC) | Repetitive Peak Off-State Current - (mA) | Maximum Junction Case Thermal Resistance | Typical Gate Charge @ 10V - (nC) | Typical Output Capacitance - (pF) | Typical Input Capacitance @ Vds - (pF) | Typical Power Gain - (dB) | Maximum Output Power - (W) | Maximum Collector-Emitter Saturation Voltage - (V) | Maximum Frequency - (MHz) | Typical 3rd Order Intercept Point - (dBm) | Maximum Transition Frequency - (MHz) | Maximum Noise Figure - (dB) | Typical Drain-Source Resistance @ 25°C - (mOhm) | Process Technology | Packaging | Pin Count | Supplier Package | Standard Package Name | CECC Qualified | ESD Protection | Military | AEC Qualified | AEC Qualified Number | Auto motive | P PAP | ECCN Code | SVHC | SVHC Exceeds Threshold |
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TK6A60W,S4VX
Trans MOSFET N-CH Si 600V 6.2A 3-Pin(3+Tab) TO-220SIS Magazine
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Von 0,7403 € bis 0,9363 €
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 600 | ±30 | 30000 | 6.2 | 750@10V | 12@10V | 12 | 390@300V | Magazine | 3 | TO-220SIS | TO | No | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
CRF02(TE85L,Q)
Diode Switching 800V 0.5A 2-Pin S-FLAT T/R
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Toshiba | Gleichrichter | Switching Diode | Single | 800 | 0.5@Ta=84C | 10 | 3 | 50 | 100 | Tape and Reel | 2 | S-FLAT | No | No | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SSM6N815R,LF(B
Trans MOSFET N-CH Si 100V 2A 6-Pin TSOP-F
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Toshiba | MOSFETs | Power MOSFET | Si | N | Dual | Enhancement | 2 | 100 | ±20 | 1800 | 2 | 103@10V | 3.1@4.5V | 290@15V | 6 | TSOP-F | SO | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SC3075(TE16L1,NQ)
Trans GP BJT NPN 400V 0.8A 3-Pin(2+Tab) New PW-Mold T/R
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Toshiba | GP BJT | NPN | Bipolar Power | Si | Single | 400 | 500 | 1 | 7 | 1@0.01A@0.1A | 0.8 | 1000 | 2 to 30 | 20@0.1A@5V|10@0.5A@5V | 0.5@0.01A@0.1A | Tape and Reel | 3 | New PW-Mold | TO | No | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TDTC114E,LM
Trans Digital BJT NPN 50V 0.1A 320mW 3-Pin SOT-23 T/R
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Von 0,016 € bis 0,0175 €
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Toshiba | Digital-BJT | NPN | Single | 50 | 0.1 | 10 | 1 | 320 | 30@5mA@5V | Tape and Reel | 3 | SOT-23 | SOT | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SSM5H08TU,LF Trans MOSFET N-CH Si 20V 1.5A 5-Pin UFV T/R |
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 20 | ±12 | 1.1 | 500 | 1.5 | 160@4V | 125@10V | Tape and Reel | 5 | UFV | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TTC4116FU,LF Trans GP BJT NPN 50V 0.15A 100mW 3-Pin USM T/R |
Von 0,0267 € bis 0,0292 €
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Toshiba | GP BJT | NPN | Bipolar Small Signal | Si | Single | 50 | 60 | 1 | 5 | 0.15 | 100 | 120 to 200 | 120@2mA@6V | 0.25@10mA@100mA | Tape and Reel | 3 | USM | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TPN4R303NL,L1Q(M
Trans MOSFET N-CH Si 30V 63A 8-Pin TSON EP Advance T/R
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single Quad Drain Triple Source | Enhancement | 1 | 30 | ±20 | 1900 | 63 | 4.3@10V | 6.8@4.5V|14.8@10V | 14.8 | 1110@15V | Tape and Reel | 8 | TSON EP Advance | SON | No | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SA2154MFV-Y,L3F
Trans GP BJT PNP 50V 0.15A 150mW 3-Pin VESM T/R Automotive AEC-Q101
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Von 0,0174 € bis 0,019 €
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Toshiba | GP BJT | PNP | Bipolar Small Signal | Si | Single | 50 | 50 | 1 | 5 | 0.15 | 150 | 120 to 200 | 120@2mA@6V | 0.3@10mA@100mA | Tape and Reel | 3 | VESM | SOT | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TK090N65Z,S1F
Trans MOSFET N-CH Si 650V 30A 3-Pin(3+Tab) TO-247 Tube
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Von 3,2015 € bis 3,4354 €
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 650 | ±30 | 230000 | 30 | 90@10V | 47@10V | 47 | 2780@300V | 75@10V | Tube | 3 | TO-247 | TO | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SSM3H137TU,LF
Trans MOSFET N-CH Si 34V 2A Automotive AEC-Q101 3-Pin UFM T/R
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Toshiba | MOSFETs | Small Signal | Si | N | Single | Enhancement | 1 | 34 | ±20 | 1000 | 2 | 240@10V | 3@10V | 3 | 119@10V | Tape and Reel | 3 | UFM | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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TK11A65D(STA4,Q,M)
Trans MOSFET N-CH Si 650V 11A 3-Pin(3+Tab) TO-220SIS
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 650 | ±30 | 4 | 45000 | 11 | 700@10V | 30@10V | 30 | 1700@25V | 3 | TO-220SIS | TO | No | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
1Z24A(Q)
Zener Diode Single 24V 5% 30Ohm 1000mW 2-Pin DO-15
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Toshiba | Zener | Voltage Regulator | Single | 24 | 5% | 10 | 1.2 | 10 | 30 | 1000 | 1000 | 2 | DO-15 | DO | No | Unknown | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1SS427,L3M(B Switching Diode Silicon Epitaxial Planar |
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Toshiba | Gleichrichter | 2 | SOD-923 | SOD | No | No | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
CMH08A(TE12L,Q,M)
Diode Switching Si 400V 2A 2-Pin M-FLAT T/R
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Toshiba | Gleichrichter | Switching Diode | Si | Single | 400 | 2 | 20 | 1.8 | 10 | 35 | Tape and Reel | 2 | M-FLAT | No | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
30JL2C41(F)
Diode Switching 600V 30A 3-Pin(3+Tab) TO-3PN
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Toshiba | Gleichrichter | Switching Diode | Dual Common Cathode | 600 | 30 | 165 | 2@15A | 50 | 50 | 3 | TO-3PN | TO | No | No | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
02CZ3.0-X(TE85L,F)
Zener Diode Single 2.925V 2.5% 120Ohm 200mW 3-Pin S-Mini T/R
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Toshiba | Zener | Voltage Regulator | Single | 2.925 | 2.5% | 5 | 50 | 120 | 200 | 200 | Tape and Reel | 3 | S-Mini | SOT | No | Unknown | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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2SC2714-O(TE85L,F)
Trans RF BJT NPN 30V 0.02A 100mW 3-Pin S-Mini T/R
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Toshiba | HF-BJT | NPN | Si | Single | 30 | 40 | 1 | 4 | 0.02 | 6V/1mA | 100 | 50 to 120 | 70@1mA@6V | 23 | 550(Typ) | 5 | Tape and Reel | 3 | S-Mini | SOT | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SK366-GR(F) Trans JFET N-CH 6.5mA Si 3-Pin |
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Toshiba | JFETs | Si | N | Single | -40 | 200 | 6.5 | 50000(Typ) | 3 | No | No | No | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 5JLZ47A(F) Diode Switching 600V 5A 2-Pin(2+Tab) TO-220NIS |
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Toshiba | Gleichrichter | Switching Diode | Single | 600 | 5 | 40 | 4 | 50 | 35 | 2 | TO-220NIS | TO | No | No | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
HN1A01FU-Y,LF
Trans GP BJT PNP 50V 0.15A 200mW 6-Pin US T/R Automotive AEC-Q101
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Von 0,0203 € bis 0,0275 €
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Toshiba | GP BJT | PNP | Bipolar Small Signal | Si | Dual | 50 | 50 | 2 | 5 | 0.15 | 200 | 120 to 200 | 120@2mA@6V | 0.3@10mA@100mA | Tape and Reel | 6 | US | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
1SV310(TPH3,F)
Varactor Diode Single 10V 9.7pF 2-Pin USC T/R
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Toshiba | Varaktors | VCO | UHF | Single | 10 | 0.003 | 1.8 | 1V/4V | 9.7@1V | Tape and Reel | 2 | USC | SOD | No | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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CRF03(TE85L,Q)
Diode Switching Si 600V 0.7A 2-Pin S-FLAT T/R
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Toshiba | Gleichrichter | Switching Diode | Si | Single | 600 | 0.7@Ta=76C | 10 | 2 | 50 | 100 | Tape and Reel | 2 | S-FLAT | No | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1SS301SU,LF(D Diode Silicon Epitaxial Planar Type |
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Toshiba | Gleichrichter | 3 | USM | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TD62104PG(5,J)
Trans Darlington NPN 25V 0.5A 1000mW 16-Pin PDIP
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Toshiba | Darlington BJT | NPN | Array 7 | 25 | 7 | 0.5 | 1000 | 1000@350mA@2V | 2.2@350mA|2@200mA|1.8@100mA | 0.13um | 16 | PDIP | DIP | No | No | No | No | No | EAR99 |