Toshiba Diodes, Transistors and Thyristors
| Teile-Nr. | Preis | Bestand | Hersteller | Kategorie | Type | Maximum Rate of Rise of Off-State Voltage - (V/us) | Category | Maximum Rate of Rise of On-State Current - (A/us) | Material | Frequency Band | Channel Type | Maximum Gate Trigger Voltage - (V) | Configuration | Channel Mode | Typical Zener Voltage - (V) | Repetitive Peak Reverse Voltage - (V) | Peak Reverse Repetitive Voltage - (V) | Maximum Reverse Voltage - (V) | Maximum Gate Trigger Current - (mA) | Maximum Gate Emitter Voltage - (V) | Maximum Collector-Emitter Voltage - (V) | Zener Voltage Tolerance | Surge Current Rating - (A) | Maximum Reverse Current - (uA) | Maximum Continuous Forward Current - (A) | Maximum Collector-Base Voltage - (V) | Number of Elements per Chip | Minimum Tuning Ratio | Maximum Holding Current - (mA) | Maximum Drain-Gate Voltage - (V) | Maximum Continuous DC Collector Current - (A) | Maximum Base-Emitter Voltage - (V) | Typical Input Resistance - (kOhm) | Tuning Ratio Test Condition | Test Current - (mA) | Peak Non-Repetitive Forward Surge Current - (A) | Maximum Series Resistance @ Maximum IF - (Ohm) | Maximum Forward Voltage - (V) | Maximum Drain-Source Voltage - (V) | Maximum Base-Emitter Saturation Voltage - (V) | Typical Resistor Ratio | Peak Reverse Current - (uA) | Maximum Reverse Leakage Current - (uA) | Maximum Gate-Source Voltage - (V) | Maximum DC Collector Current - (A) | Peak On-State Voltage - (V) | Operational Bias Conditions | Minimum Diode Capacitance - (pF) | Maximum Junction Ambient Thermal Resistance | Maximum Gate Threshold Voltage - (V) | Maximum Gate Peak Inverse Voltage - (V) | Maximum Zener Impedance - (Ohm) | Maximum Power Dissipation - (mW) | Maximum Power Dissipation @ 25C - (mW) | Maximum Diode Capacitance - (pF) | Maximum Continuous Drain Current - (A) | RMS On-State Current - (A) | Repetitive Peak Forward Blocking Voltage - (V) | Rated Average On-State Current - (A) | Peak Reverse Recovery Time - (ns) | Minimum DC Current Gain Range | Minimum DC Current Gain | Maximum Drain-Source Resistance - (mOhm) | Typical Gate Charge @ Vgs - (nC) | Repetitive Peak Off-State Current - (mA) | Maximum Junction Case Thermal Resistance | Typical Gate Charge @ 10V - (nC) | Typical Output Capacitance - (pF) | Typical Input Capacitance @ Vds - (pF) | Typical Power Gain - (dB) | Maximum Output Power - (W) | Maximum Collector-Emitter Saturation Voltage - (V) | Maximum Frequency - (MHz) | Typical 3rd Order Intercept Point - (dBm) | Maximum Transition Frequency - (MHz) | Maximum Noise Figure - (dB) | Typical Drain-Source Resistance @ 25°C - (mOhm) | Process Technology | Packaging | Pin Count | Supplier Package | Standard Package Name | CECC Qualified | ESD Protection | Military | AEC Qualified | AEC Qualified Number | Auto motive | P PAP | ECCN Code | SVHC | SVHC Exceeds Threshold |
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| 1SS427,L3M(B Switching Diode Silicon Epitaxial Planar |
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Toshiba | Gleichrichter | 2 | SOD-923 | SOD | No | No | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
CMH08A(TE12L,Q,M)
Diode Switching Si 400V 2A 2-Pin M-FLAT T/R
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Toshiba | Gleichrichter | Switching Diode | Si | Single | 400 | 2 | 20 | 1.8 | 10 | 35 | Tape and Reel | 2 | M-FLAT | No | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
30JL2C41(F)
Diode Switching 600V 30A 3-Pin(3+Tab) TO-3PN
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Toshiba | Gleichrichter | Switching Diode | Dual Common Cathode | 600 | 30 | 165 | 2@15A | 50 | 50 | 3 | TO-3PN | TO | No | No | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
02CZ3.0-X(TE85L,F)
Zener Diode Single 2.925V 2.5% 120Ohm 200mW 3-Pin S-Mini T/R
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Toshiba | Zener | Voltage Regulator | Single | 2.925 | 2.5% | 5 | 50 | 120 | 200 | 200 | Tape and Reel | 3 | S-Mini | SOT | No | Unknown | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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2SC2714-O(TE85L,F)
Trans RF BJT NPN 30V 0.02A 100mW 3-Pin S-Mini T/R
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Toshiba | HF-BJT | NPN | Si | Single | 30 | 40 | 1 | 4 | 0.02 | 6V/1mA | 100 | 50 to 120 | 70@1mA@6V | 23 | 550(Typ) | 5 | Tape and Reel | 3 | S-Mini | SOT | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SK366-GR(F) Trans JFET N-CH 6.5mA Si 3-Pin |
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Toshiba | JFETs | Si | N | Single | -40 | 200 | 6.5 | 50000(Typ) | 3 | No | No | No | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 5JLZ47A(F) Diode Switching 600V 5A 2-Pin(2+Tab) TO-220NIS |
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Toshiba | Gleichrichter | Switching Diode | Single | 600 | 5 | 40 | 4 | 50 | 35 | 2 | TO-220NIS | TO | No | No | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
HN1A01FU-Y,LF
Trans GP BJT PNP 50V 0.15A 200mW 6-Pin US T/R Automotive AEC-Q101
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Von 0,0203 € bis 0,0275 €
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Toshiba | GP BJT | PNP | Bipolar Small Signal | Si | Dual | 50 | 50 | 2 | 5 | 0.15 | 200 | 120 to 200 | 120@2mA@6V | 0.3@10mA@100mA | Tape and Reel | 6 | US | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
1SV310(TPH3,F)
Varactor Diode Single 10V 9.7pF 2-Pin USC T/R
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Toshiba | Varaktors | VCO | UHF | Single | 10 | 0.003 | 1.8 | 1V/4V | 9.7@1V | Tape and Reel | 2 | USC | SOD | No | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
CRF03(TE85L,Q)
Diode Switching Si 600V 0.7A 2-Pin S-FLAT T/R
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Toshiba | Gleichrichter | Switching Diode | Si | Single | 600 | 0.7@Ta=76C | 10 | 2 | 50 | 100 | Tape and Reel | 2 | S-FLAT | No | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1SS301SU,LF(D Diode Silicon Epitaxial Planar Type |
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Toshiba | Gleichrichter | 3 | USM | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TD62104PG(5,J)
Trans Darlington NPN 25V 0.5A 1000mW 16-Pin PDIP
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Toshiba | Darlington BJT | NPN | Array 7 | 25 | 7 | 0.5 | 1000 | 1000@350mA@2V | 2.2@350mA|2@200mA|1.8@100mA | 0.13um | 16 | PDIP | DIP | No | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
RN2110MFV,L3F
Trans Digital BJT PNP 50V 0.1A 150mW 3-Pin VESM T/R Automotive AEC-Q101
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Von 0,0201 € bis 0,0219 €
pro Stück
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Toshiba | Digital-BJT | PNP | Single | 50 | 0.1 | 4.7 | 150 | 120@1mA@5V | 0.3@0.25mA@5mA | Tape and Reel | 3 | VESM | SOT | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TRS20N65FB,S1Q
Diode Schottky SiC 650V 20A 3-Pin(3+Tab) TO-247 Tube
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Von 3,6558 € bis 3,9227 €
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Toshiba | Gleichrichter | Schottky Diode | SiC | Dual Common Cathode | 650 | 20 | 158 | 1.6@10A | 50 | 214000 | Tube | 3 | TO-247 | TO | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SA1586-Y,LF
Trans GP BJT PNP 50V 0.15A 200mW 3-Pin USM T/R Automotive AEC-Q101
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Von 0,016 € bis 0,0175 €
pro Stück
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Toshiba | GP BJT | PNP | Bipolar Small Signal | Si | Single | 50 | 50 | 1 | 5 | 0.15 | 200 | 120 to 200 | 120@2mA@6V | 0.3@10mA@100mA | 10 | Tape and Reel | 3 | USM | No | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
1Z68(Q)
Zener Diode Single 68V 10% 120Ohm 1000mW 2-Pin DO-15
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Toshiba | Zener | Voltage Regulator | Single | 68 | 10% | 4 | 1.2 | 10 | 120 | 1000 | 1000 | 2 | DO-15 | DO | No | Unknown | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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CMZ20(TE12L,Q)
Zener Diode Single 20V 10% 30Ohm 2000mW 2-Pin M-FLAT T/R
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Toshiba | Zener | Voltage Regulator | Single | 20 | 10% | 10 | 10 | 30 | 2000 | Tape and Reel | 2 | M-FLAT | No | Unknown | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TPN7R006PL,L1Q
Trans MOSFET N-CH Si 60V 76A 8-Pin TSON EP Advance T/R
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Von 0,3057 € bis 0,3313 €
pro Stück
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single Quad Drain Triple Source | Enhancement | 1 | 60 | ±20 | 2670 | 76 | 7@10V | 20@10V|9.8@4.5V | 20 | 1440@30V | Tape and Reel | 8 | TSON EP Advance | SON | No | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SK3471(TE12L,F)
Trans MOSFET N-CH Si 500V 0.5A 4-Pin(3+Tab) PW-Mini T/R
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single Dual Drain | Enhancement | 1 | 500 | ±30 | 1500 | 0.5 | 18000@10V | 3.8@10V | 3.8 | 75@10V | 10000@10V | Tape and Reel | 4 | PW-Mini | SOT | No | Unknown | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TPC8227-H,LQ
Trans MOSFET N-CH Si 40V 5.1A 8-Pin SOP T/R
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Toshiba | MOSFETs | Power MOSFET | Si | N | Dual Dual Drain | Enhancement | 2 | 40 | ±20 | 1500 | 5.1 | 33@10V | 5.3@5V|10@10V | 10 | 640@10V | Tape and Reel | 8 | SOP | SO | No | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CUS10I40A(TE85L,Q) Diode Schottky 40V 1A 2-Pin US-FLAT |
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Toshiba | Gleichrichter | Schottky Diode | Single | 40 | 1 | 20 | 0.49@0.7A | 60 | 2 | US-FLAT | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TK6R8A08QM,S4X
Trans MOSFET N-CH Si 80V 58A 3-Pin(3+Tab) TO-220SIS Tube
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Von 0,5085 € bis 0,5512 €
pro Stück
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 80 | ±20 | 3.5 | 41000 | 58 | 6.8@10V | 23@6V|39@10V | 39 | 2700@40V | U-MOS X-H | Tube | 3 | TO-220SIS | TO | No | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
CCS15S40,L3F(A
Diode Small Signal Schottky Si 40V 1.5A 2-Pin CST-C T/R
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Toshiba | Gleichrichter | Small Signal Schottky Diode | Si | Single | 40 | 1.5 | 5 | 0.55 | 200 | 170(Typ) | Tape and Reel | 2 | CST-C | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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CRG05(TE85L,Q)
Diode Si 800V 1A 2-Pin S-FLAT T/R Automotive AEC-Q101
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Toshiba | Gleichrichter | Si | Single | 800 | 1 | 15 | 1.2 | 10 | Tape and Reel | 2 | S-FLAT | No | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
30QWK2CZ47(F)
Diode Schottky 120V 30A 3-Pin(3+Tab) TO-220NIS
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Toshiba | Gleichrichter | Schottky Diode | Dual Common Cathode | 120 | 30 | 250 | 0.85@15A | 50 | 3 | TO-220NIS | TO | No | No | No | No | No | EAR99 |