Toshiba Diodes, Transistors and Thyristors
| Teile-Nr. | Preis | Bestand | Hersteller | Kategorie | Type | Maximum Rate of Rise of Off-State Voltage - (V/us) | Category | Maximum Rate of Rise of On-State Current - (A/us) | Material | Frequency Band | Channel Type | Maximum Gate Trigger Voltage - (V) | Configuration | Channel Mode | Typical Zener Voltage - (V) | Repetitive Peak Reverse Voltage - (V) | Peak Reverse Repetitive Voltage - (V) | Maximum Reverse Voltage - (V) | Maximum Gate Trigger Current - (mA) | Maximum Gate Emitter Voltage - (V) | Maximum Collector-Emitter Voltage - (V) | Zener Voltage Tolerance | Surge Current Rating - (A) | Maximum Reverse Current - (uA) | Maximum Continuous Forward Current - (A) | Maximum Collector-Base Voltage - (V) | Number of Elements per Chip | Minimum Tuning Ratio | Maximum Holding Current - (mA) | Maximum Drain-Gate Voltage - (V) | Maximum Continuous DC Collector Current - (A) | Maximum Base-Emitter Voltage - (V) | Typical Input Resistance - (kOhm) | Tuning Ratio Test Condition | Test Current - (mA) | Peak Non-Repetitive Forward Surge Current - (A) | Maximum Series Resistance @ Maximum IF - (Ohm) | Maximum Forward Voltage - (V) | Maximum Drain-Source Voltage - (V) | Maximum Base-Emitter Saturation Voltage - (V) | Typical Resistor Ratio | Peak Reverse Current - (uA) | Maximum Reverse Leakage Current - (uA) | Maximum Gate-Source Voltage - (V) | Maximum DC Collector Current - (A) | Peak On-State Voltage - (V) | Operational Bias Conditions | Minimum Diode Capacitance - (pF) | Maximum Junction Ambient Thermal Resistance | Maximum Gate Threshold Voltage - (V) | Maximum Gate Peak Inverse Voltage - (V) | Maximum Zener Impedance - (Ohm) | Maximum Power Dissipation - (mW) | Maximum Power Dissipation @ 25C - (mW) | Maximum Diode Capacitance - (pF) | Maximum Continuous Drain Current - (A) | RMS On-State Current - (A) | Repetitive Peak Forward Blocking Voltage - (V) | Rated Average On-State Current - (A) | Peak Reverse Recovery Time - (ns) | Minimum DC Current Gain Range | Minimum DC Current Gain | Maximum Drain-Source Resistance - (mOhm) | Typical Gate Charge @ Vgs - (nC) | Repetitive Peak Off-State Current - (mA) | Maximum Junction Case Thermal Resistance | Typical Gate Charge @ 10V - (nC) | Typical Output Capacitance - (pF) | Typical Input Capacitance @ Vds - (pF) | Typical Power Gain - (dB) | Maximum Output Power - (W) | Maximum Collector-Emitter Saturation Voltage - (V) | Maximum Frequency - (MHz) | Typical 3rd Order Intercept Point - (dBm) | Maximum Transition Frequency - (MHz) | Maximum Noise Figure - (dB) | Typical Drain-Source Resistance @ 25°C - (mOhm) | Process Technology | Packaging | Pin Count | Supplier Package | Standard Package Name | CECC Qualified | ESD Protection | Military | AEC Qualified | AEC Qualified Number | Auto motive | P PAP | ECCN Code | SVHC | SVHC Exceeds Threshold |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
HN1D05FE,LF
Switching Diodes Silicon Epitaxial Planar
|
Von 0,0254 € bis 0,0277 €
pro Stück
|
Toshiba | Gleichrichter | 6 | ES | No | No | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SD1409A(F)
Trans Darlington NPN 400V 6A 2000mW 3-Pin(3+Tab) TO-220NIS
|
|
Toshiba | Darlington BJT | NPN | Single | 400 | 600 | 1 | 6 | 5 | 2.5@0.04A@4A | 2000 | 100@4A@2V|600@2A@2V | 2@0.04A@4A | 3 | TO-220NIS | TO | No | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SSM3J09FU,LF(T
Trans MOSFET P-CH Si 30V 0.2A 3-Pin USM T/R
|
|
Toshiba | MOSFETs | Small Signal | Si | P | Single | Enhancement | 1 | 30 | ±20 | 150 | 0.2 | 2700@10V | 22@5V | Tape and Reel | 3 | USM | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TK6Q60W,S1VQ
Trans MOSFET N-CH Si 600V 6.2A 3-Pin(3+Tab) IPAK Tube
|
Von 0,9048 € bis 0,9666 €
pro Stück
|
Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 600 | ±30 | 3.7 | 60000 | 6.2 | 820@10V | 12@10V | 12 | 390@300V | Tube | 3 | IPAK | TO | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
RN1311(TE85L,F)
Trans Digital BJT NPN 50V 0.1A 100mW 3-Pin USM T/R
|
|
Toshiba | Digital-BJT | NPN | Single | 50 | 0.1 | 10 | 100 | 120@1mA@5V | 0.3@0.25mA@5mA | Tape and Reel | 3 | USM | No | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TKR74F04PB,LXGQ
Trans MOSFET N-CH Si 40V 250A 3-Pin(2+Tab) TO-220SM(W) T/R Automotive AEC-Q101
|
|
Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 40 | ±20 | 3 | 375000 | 250 | 0.74@10V | 227@10V | 227 | 14200@10V | 0.6@10V|0.7@6V | Tape and Reel | 3 | TO-220SM(W) | TO | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
2SK2034(TE85L,F)
Trans MOSFET N-CH Si 20V 0.1A 3-Pin USM T/R
|
|
Toshiba | MOSFETs | Small Signal | Si | N | Single | Enhancement | 1 | 20 | 10 | 100 | 0.1 | 12000@2.5V | 8.5@3V | Tape and Reel | 3 | USM | No | No | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
2SK3797(Q)
Trans MOSFET N-CH Si 600V 13A 3-Pin(3+Tab) TO-220SIS
|
|
Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 600 | ±30 | 50000 | 13 | 430@10V | 62@10V | 62 | 3100@25V | 3 | TO-220SIS | TO | No | No | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SSM6K504NU,LF
Trans MOSFET N-CH 30V 9A 6-Pin UDFN-B EP T/R Automotive AEC-Q101
|
Von 0,0815 € bis 0,0889 €
pro Stück
|
Toshiba | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 30 | ±20 | 2.5 | 1250 | 9 | 19.5@10V | 4.8@4.5V | 620@15V | Tape and Reel | 6 | UDFN-B EP | DFN | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SC4738-BL(TE85L,F
Trans GP BJT NPN 50V 0.15A 120mW Automotive AEC-Q101 3-Pin SSM T/R
|
|
Toshiba | GP BJT | NPN | Bipolar Small Signal | Si | Single | 50 | 60 | 1 | 5 | 0.15 | 120 | 300 to 500 | 350@2mA@6V | 0.25@10mA@100mA | Tape and Reel | 3 | SSM | No | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
2SK2035(T5L,F,T)
Trans MOSFET N-CH Si 20V 0.1A 3-Pin SSM T/R
|
|
Toshiba | MOSFETs | Small Signal | Si | N | Single | Enhancement | 1 | 20 | 10 | 100 | 0.1 | 12000@2.5V | 8.5@3V | Tape and Reel | 3 | SSM | No | No | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TD62783AFNG(O,S,EL
Trans Darlington NPN/PNP 50V 0.5A 960mW 18-Pin SSOP T/R
|
|
Toshiba | Darlington BJT | NPN|PNP | Octal Common Emitter | 50 | 8 | 0.5 | 960 | 1.8@100mA|1.9@225mA|2@350mA | Tape and Reel | 18 | SSOP | SO | No | No | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
2SK3667(Q)
Trans MOSFET N-CH Si 600V 7.5A 3-Pin(3+Tab) TO-220SIS T/R
|
|
Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 600 | ±30 | 45000 | 7.5 | 1000@10V | 33@10V | 33 | 1300@25V | Tape and Reel | 3 | TO-220SIS | TO | No | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| U05NU44(TE12L,Q) Diode Switching 1KV 0.5A 2-Pin I-FLAT T/R |
|
Toshiba | Gleichrichter | Switching Diode | Single | 1000 | 0.5 | 10 | 3 | 100 | 100 | Tape and Reel | 2 | I-FLAT | No | No | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
RN1316(TE85L,F)
Trans Digital BJT NPN 50V 0.1A 100mW 3-Pin USM T/R
|
|
Toshiba | Digital-BJT | NPN | Single | 50 | 0.1 | 4.7 | 0.47 | 100 | 50@10mA@5V | 0.3@0.25mA@5mA | Tape and Reel | 3 | USM | No | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SK3074(TE12L,F)
Trans RF MOSFET N-CH 30V 1A 4-Pin(3+Tab) PW-Mini T/R
|
|
Toshiba | HF-MOSFETs | Si | N | Single Dual Source | 1 | 30 | 25 | 3000 | 1 | 14.9(Min) | 0.63(Min) | Tape and Reel | 4 | PW-Mini | SOT | No | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
02CZ6.8-X(TE85L,F)
Zener Diode Single 6.6V 2.5% 25Ohm 200mW 3-Pin S-Mini T/R
|
|
Toshiba | Zener | Voltage Regulator | Single | 6.6 | 2.5% | 5 | 0.5 | 25 | 200 | 200 | Tape and Reel | 3 | S-Mini | SOT | No | Unknown | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
SM3GZ47(F)
TRIAC 400V 33A 3-Pin(3+Tab) TO-220NIS
|
|
Toshiba | TRIACs | 300(Typ) | 50 | 1.5 | 400 | 20 | 30 | 1.5@4.5A | 400 | 0.02 | 3 | TO-220NIS | TO | No | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
CRZ10(TE85L,Q)
Zener Diode Single 10V 10% 30Ohm 700mW 2-Pin S-FLAT T/R
|
|
Toshiba | Zener | Voltage Regulator | Single | 10 | 10% | 10 | 10 | 30 | 700 | 700 | Tape and Reel | 2 | S-FLAT | No | Unknown | No | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
CLS03(TE16L,Q)
Diode Schottky 60V 10A 2-Pin L-FLAT T/R
|
|
Toshiba | Gleichrichter | Schottky Diode | Single | 60 | 10 | 100 | 0.58 | 1000 | Tape and Reel | 2 | L-FLAT | No | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
1SS387CT(TPL3)
Diode Switching Si 85V 0.1A 2-Pin CST T/R
|
|
Toshiba | Gleichrichter | Switching Diode | Si | Single | 85 | 0.1 | 1 | 1.2 | 0.5 | 200 | 3 | 4 | Tape and Reel | 2 | CST | SOD | No | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
CMS15(TE12L,Q)
Diode Schottky 60V 3A 2-Pin M-FLAT T/R
|
|
Toshiba | Gleichrichter | Schottky Diode | Single | 60 | 3 | 60 | 0.58 | 300 | Tape and Reel | 2 | M-FLAT | No | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SJ105-BL(F) Trans JFET P-CH 14mA Si 3-Pin 2-4E1B |
|
Toshiba | JFETs | Si | P | Single | 50 | 200 | 14 | 3 | 2-4E1B | No | No | No | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| S5688G(TPA3,Q) Diode 400V 1A 2-Pin DO-41SS T/R |
|
Toshiba | Gleichrichter | Single | 400 | 1 | 49 | 1.2 | 10 | Tape and Reel | 2 | DO-41SS | DO | No | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TPH3300CNH,L1Q
TPH3300CNH,L1Q Toshiba MOSFETs Transistor N-CH Si 150V 29A 8-Pin SOP Advance T/R Si - Arrow.com
|
Von 0,4125 € bis 0,447 €
pro Stück
|
Toshiba | MOSFETs | Power MOSFET | Si | N | Single Quad Drain Triple Source | Enhancement | 1 | 150 | ±20 | 4 | 2800 | 29 | 33@10V | 10.6@10V | 10.6 | 810@75V | Tape and Reel | 8 | SOP Advance | SO | No | No | No | No | EAR99 | Yes | Yes |