Toshiba Diodes, Transistors and Thyristors
| Teile-Nr. | Preis | Bestand | Hersteller | Kategorie | Type | Maximum Rate of Rise of Off-State Voltage - (V/us) | Category | Maximum Rate of Rise of On-State Current - (A/us) | Material | Frequency Band | Channel Type | Maximum Gate Trigger Voltage - (V) | Configuration | Channel Mode | Typical Zener Voltage - (V) | Repetitive Peak Reverse Voltage - (V) | Peak Reverse Repetitive Voltage - (V) | Maximum Reverse Voltage - (V) | Maximum Gate Trigger Current - (mA) | Maximum Gate Emitter Voltage - (V) | Maximum Collector-Emitter Voltage - (V) | Zener Voltage Tolerance | Surge Current Rating - (A) | Maximum Reverse Current - (uA) | Maximum Continuous Forward Current - (A) | Maximum Collector-Base Voltage - (V) | Number of Elements per Chip | Minimum Tuning Ratio | Maximum Holding Current - (mA) | Maximum Drain-Gate Voltage - (V) | Maximum Continuous DC Collector Current - (A) | Maximum Base-Emitter Voltage - (V) | Typical Input Resistance - (kOhm) | Tuning Ratio Test Condition | Test Current - (mA) | Peak Non-Repetitive Forward Surge Current - (A) | Maximum Series Resistance @ Maximum IF - (Ohm) | Maximum Forward Voltage - (V) | Maximum Drain-Source Voltage - (V) | Maximum Base-Emitter Saturation Voltage - (V) | Typical Resistor Ratio | Peak Reverse Current - (uA) | Maximum Reverse Leakage Current - (uA) | Maximum Gate-Source Voltage - (V) | Maximum DC Collector Current - (A) | Peak On-State Voltage - (V) | Operational Bias Conditions | Minimum Diode Capacitance - (pF) | Maximum Junction Ambient Thermal Resistance | Maximum Gate Threshold Voltage - (V) | Maximum Gate Peak Inverse Voltage - (V) | Maximum Zener Impedance - (Ohm) | Maximum Power Dissipation - (mW) | Maximum Power Dissipation @ 25C - (mW) | Maximum Diode Capacitance - (pF) | Maximum Continuous Drain Current - (A) | RMS On-State Current - (A) | Repetitive Peak Forward Blocking Voltage - (V) | Rated Average On-State Current - (A) | Peak Reverse Recovery Time - (ns) | Minimum DC Current Gain Range | Minimum DC Current Gain | Maximum Drain-Source Resistance - (mOhm) | Typical Gate Charge @ Vgs - (nC) | Repetitive Peak Off-State Current - (mA) | Maximum Junction Case Thermal Resistance | Typical Gate Charge @ 10V - (nC) | Typical Output Capacitance - (pF) | Typical Input Capacitance @ Vds - (pF) | Typical Power Gain - (dB) | Maximum Output Power - (W) | Maximum Collector-Emitter Saturation Voltage - (V) | Maximum Frequency - (MHz) | Typical 3rd Order Intercept Point - (dBm) | Maximum Transition Frequency - (MHz) | Maximum Noise Figure - (dB) | Typical Drain-Source Resistance @ 25°C - (mOhm) | Process Technology | Packaging | Pin Count | Supplier Package | Standard Package Name | CECC Qualified | ESD Protection | Military | AEC Qualified | AEC Qualified Number | Auto motive | P PAP | ECCN Code | SVHC | SVHC Exceeds Threshold |
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SSM6N44FE(TE85L,F)
Trans MOSFET N-CH Si 20V 0.1A 6-Pin ES T/R
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Toshiba | MOSFETs | Small Signal | Si | N | Dual | Enhancement | 2 | 20 | ±8@P Channel|±10@N Channel | 1.5 | 150 | 0.1 | 4000@4V | 1.2@4V@P Channel|1.23@4V@N Channel | 43@10V@P Channel|46@10V@N Channel | Tape and Reel | 6 | ES | No | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
RN1901(TE85L,F)
Trans Digital BJT NPN 50V 0.1A 200mW 6-Pin US T/R Automotive AEC-Q101
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Toshiba | Digital-BJT | NPN | Dual | 50 | 0.1 | 4.7 | 1 | 200 | 30@10mA@5V | 0.3@0.25mA@5mA | Tape and Reel | 6 | US | No | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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RN1906(T5L,F,T)
Trans Digital BJT NPN 50V 0.1A 200mW 6-Pin US T/R Automotive AEC-Q101
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Toshiba | Digital-BJT | NPN | Dual | 50 | 0.1 | 4.7 | 0.1 | 200 | 80@10mA@5V | 0.3@0.25mA@5mA | Tape and Reel | 6 | US | No | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
RN4606(TE85L,F)
Trans Digital BJT NPN/PNP 50V 0.1A 300mW 6-Pin SM T/R
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Toshiba | Digital-BJT | PNP|NPN | Dual | 50 | 0.1 | 4.7 | 0.1 | 300 | 80@10mA@5V | 0.3@0.25mA@5mA | Tape and Reel | 6 | SM | SOT | No | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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RN4982(TE85L,F)
Trans Digital BJT NPN/PNP 50V 0.1A 200mW 6-Pin US T/R
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Toshiba | Digital-BJT | PNP|NPN | Dual | 50 | 0.1 | 10 | 1 | 200 | 50@10mA@5V | 0.3@0.25mA@5mA | Tape and Reel | 6 | US | No | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
RN2505(TE85L,F)
Trans Digital BJT PNP 50V 0.1A 300mW 5-Pin SMV T/R
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Toshiba | Digital-BJT | PNP | Dual Common Emitter | 50 | 0.1 | 2.2 | 0.047 | 300 | 80@10mA@5V | 0.3@0.25mA@5mA | Tape and Reel | 5 | SMV | SOT | No | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SSM6P15FU(TE85L,F)
Trans MOSFET P-CH Si 30V 0.1A 6-Pin US T/R
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Toshiba | MOSFETs | Small Signal | Si | P | Dual | Enhancement | 2 | 30 | ±20 | 200 | 0.1 | 12000@4V | 9.1@3V | Tape and Reel | 6 | US | No | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
RN2413TE85LF
Trans Digital BJT PNP 50V 0.1A 200mW 3-Pin S-Mini T/R
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Von 0,0321 € bis 0,035 €
pro Stück
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Toshiba | Digital-BJT | PNP | Single | 50 | 0.1 | 47 | 200 | 120@1mA@5V | 0.3@0.25mA@5mA | Tape and Reel | 3 | S-Mini | SOT | No | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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RN2414(TE85L,F)
Trans Digital BJT PNP 50V 0.1A 200mW 3-Pin S-Mini T/R
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Toshiba | Digital-BJT | PNP | Single | 50 | 0.1 | 1 | 0.1 | 200 | 50@10mA@5V | 0.3@0.25mA@5mA | Tape and Reel | 3 | S-Mini | SOT | No | Unknown | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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RN4608(TE85L,F)
Trans Digital BJT NPN/PNP 50V 0.1A 300mW 6-Pin SM T/R
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Toshiba | Digital-BJT | NPN|PNP | Dual | 50 | 0.1 | 22 | 0.468 | 300 | 80@10mA | 0.3@0.25mA@5mA | Tape and Reel | 6 | SM | SOT | No | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SSM5N15FU,LF(T
Trans MOSFET N-CH Si 30V 0.1A 5-Pin USV T/R
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Toshiba | MOSFETs | Small Signal | Si | N | Dual | Enhancement | 2 | 30 | ±20 | 200 | 0.1 | 4000@4V | 7.8@3V | Tape and Reel | 5 | USV | SOT | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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RN4906(T5L,F,T)
Trans Digital BJT NPN/PNP 50V 0.1A 200mW 6-Pin US
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Toshiba | Digital-BJT | NPN|PNP | Dual | 50 | 0.1 | 4.7 | 0.1 | 200 | 80@10mA@5V | 0.3@0.25mA@5mA | 6 | US | No | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SK3880(F)
Trans MOSFET N-CH Si 800V 6.5A 3-Pin(3+Tab) TO-3P(N)IS
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 800 | ±30 | 80000 | 6.5 | 1700@10V | 35@10V | 35 | 1500@25V | 3 | TO-3P(N)IS | No | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TK33S10N1L,LXHQ
Trans MOSFET N-CH Si 100V 33A 3-Pin(2+Tab) DPAK+ T/R Automotive AEC-Q101
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 100 | ±20 | 2.5 | 125000 | 33 | 9.7@10V | 33@10V | 33 | 2250@10V | Tape and Reel | 3 | DPAK+ | TO | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SD2695(F,J) Trans Darlington NPN 3 Pin |
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Toshiba | Darlington BJT | 3 | TO-92 Mod | TO | No | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SSM3J09FU(TE85L,F)
Trans MOSFET P-CH Si 30V 0.2A 3-Pin USM T/R
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Toshiba | MOSFETs | Small Signal | Si | P | Single | Enhancement | 1 | 30 | ±20 | 150 | 0.2 | 2700@10V | 22@5V | Tape and Reel | 3 | USM | No | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TPN2R304PL,L1Q(M
Trans MOSFET N-CH Si 40V 100A 8-Pin TSON EP Advance T/R
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single Quad Drain Triple Source | Enhancement | 1 | 40 | ±20 | 2670 | 100 | 2.3@10V | 19.4@4.5V|41@10V | 41 | 2750@20V | Tape and Reel | 8 | TSON EP Advance | SON | No | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TD62382AFNG(5)
8-Channel Low Input Active Darlington Sink Driver 18-Pin SSOP
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Toshiba | Diskrete, Verschiedenes | 8-Channel Low Input Active Darlington Sink Driver | 0.13um | 18 | SSOP | SO | No | No | No | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TPHR9203PL,L1Q
Trans MOSFET N-CH Si 30V 280A 8-Pin SOP Advance T/R
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Von 0,5323 € bis 0,5768 €
pro Stück
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single Quad Drain Triple Source | Enhancement | 1 | 30 | ±20 | 2.1 | 3000 | 280 | 920@10V | 38@4.5V|81@10V | 81 | 5800@15V | U-MOSIX-H | Tape and Reel | 8 | SOP Advance | SO | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1FWJ43N(TPA2,Q) Diode Schottky 30V 1A 2-Pin DO-41SS T/R |
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Toshiba | Gleichrichter | Schottky Diode | Single | 30 | 1 | 25 | 0.37 | 1500 | Tape and Reel | 2 | DO-41SS | DO | No | No | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GT35MR21,Q(O) Discrete IGBTs Silicon N-Channel IGBT |
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Toshiba | IGBT-Chip | 3 | TO-3P(N)IS | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TK11A45D(STA4,Q,M)
Trans MOSFET N-CH Si 450V 11A 3-Pin(3+Tab) TO-220SIS
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Von 0,5927 € bis 0,6409 €
pro Stück
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 450 | ±30 | 40000 | 11 | 620@10V | 20@10V | 20 | 1050@25V | 3 | TO-220SIS | TO | No | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SC6100,LF
Trans GP BJT NPN 50V 2.5A 500mW 3-Pin UFM T/R Automotive AEC-Q101
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Von 0,1039 € bis 0,1125 €
pro Stück
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Toshiba | GP BJT | NPN | Bipolar Small Signal | Si | Single | 50 | 100 | 1 | 5 | 1.1@20mA@1A | 2.5 | 500 | 200 to 300|300 to 500 | 200@1A@2V|400@0.3A@2V | 0.14@20mA@1A | Tape and Reel | 3 | UFM | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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TJ20A10M3(STA4,Q
Trans MOSFET P-CH Si 100V 20A 3-Pin(3+Tab) TO-220SIS Magazine
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Toshiba | MOSFETs | Power MOSFET | Si | P | Single | Enhancement | 1 | 100 | ±20 | 4 | 35000 | 20 | 90@10V | 120@10V | 120 | 5500@10V | Magazine | 3 | TO-220SIS | TO | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TK5P65W,RQ
Trans MOSFET N-CH Si 650V 5.2A 3-Pin(2+Tab) DPAK T/R
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 650 | ±30 | 60000 | 5.2 | 1220@10V | 10.5@10V | 380@300V | Tape and Reel | 3 | DPAK | TO | No | No | No | No | EAR99 |