Toshiba Diodes, Transistors and Thyristors
| Teile-Nr. | Preis | Bestand | Hersteller | Kategorie | Type | Maximum Rate of Rise of Off-State Voltage - (V/us) | Category | Maximum Rate of Rise of On-State Current - (A/us) | Material | Frequency Band | Channel Type | Maximum Gate Trigger Voltage - (V) | Configuration | Channel Mode | Typical Zener Voltage - (V) | Repetitive Peak Reverse Voltage - (V) | Peak Reverse Repetitive Voltage - (V) | Maximum Reverse Voltage - (V) | Maximum Gate Trigger Current - (mA) | Maximum Gate Emitter Voltage - (V) | Maximum Collector-Emitter Voltage - (V) | Zener Voltage Tolerance | Surge Current Rating - (A) | Maximum Reverse Current - (uA) | Maximum Continuous Forward Current - (A) | Maximum Collector-Base Voltage - (V) | Number of Elements per Chip | Minimum Tuning Ratio | Maximum Holding Current - (mA) | Maximum Drain-Gate Voltage - (V) | Maximum Continuous DC Collector Current - (A) | Maximum Base-Emitter Voltage - (V) | Typical Input Resistance - (kOhm) | Tuning Ratio Test Condition | Test Current - (mA) | Peak Non-Repetitive Forward Surge Current - (A) | Maximum Series Resistance @ Maximum IF - (Ohm) | Maximum Forward Voltage - (V) | Maximum Drain-Source Voltage - (V) | Maximum Base-Emitter Saturation Voltage - (V) | Typical Resistor Ratio | Peak Reverse Current - (uA) | Maximum Reverse Leakage Current - (uA) | Maximum Gate-Source Voltage - (V) | Maximum DC Collector Current - (A) | Peak On-State Voltage - (V) | Operational Bias Conditions | Minimum Diode Capacitance - (pF) | Maximum Junction Ambient Thermal Resistance | Maximum Gate Threshold Voltage - (V) | Maximum Gate Peak Inverse Voltage - (V) | Maximum Zener Impedance - (Ohm) | Maximum Power Dissipation - (mW) | Maximum Power Dissipation @ 25C - (mW) | Maximum Diode Capacitance - (pF) | Maximum Continuous Drain Current - (A) | RMS On-State Current - (A) | Repetitive Peak Forward Blocking Voltage - (V) | Rated Average On-State Current - (A) | Peak Reverse Recovery Time - (ns) | Minimum DC Current Gain Range | Minimum DC Current Gain | Maximum Drain-Source Resistance - (mOhm) | Typical Gate Charge @ Vgs - (nC) | Repetitive Peak Off-State Current - (mA) | Maximum Junction Case Thermal Resistance | Typical Input Capacitance - (pF) | Typical Gate Charge @ 10V - (nC) | Typical Output Capacitance - (pF) | Typical Input Capacitance @ Vds - (pF) | Typical Power Gain - (dB) | Maximum Output Power - (W) | Maximum Collector-Emitter Saturation Voltage - (V) | Maximum Frequency - (MHz) | Typical 3rd Order Intercept Point - (dBm) | Maximum Transition Frequency - (MHz) | Maximum Noise Figure - (dB) | Maximum Turn-On Time - (ns) | Typical Drain-Source Resistance @ 25°C - (mOhm) | Process Technology | Packaging | Pin Count | Supplier Package | Standard Package Name | CECC Qualified | ESD Protection | Military | AEC Qualified | AEC Qualified Number | Auto motive | P PAP | ECCN Code | SVHC | SVHC Exceeds Threshold |
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CBS10S40,L3F(A
Diode Small Signal Schottky 40V 1A 2-Pin CST-B
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Toshiba | Gleichrichter | Small Signal Schottky Diode | Single | 40 | 1 | 3 | 0.55 | 150 | 2 | CST-B | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
RN1701(TE85L,F)
Trans Digital BJT NPN 50V 0.1A 200mW 5-Pin USV T/R
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Toshiba | Digital-BJT | NPN | Dual Common Emitter | 50 | 0.1 | 4.7 | 1 | 200 | 30@10mA@5V | 0.3@0.25mA@5mA | Tape and Reel | 5 | USV | SOT | No | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TK62N60W,S1VF
Trans MOSFET N-CH Si 600V 61.8A 3-Pin(3+Tab) TO-247 Tube
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Von 10,4546 € bis 11,0028 €
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 600 | ±30 | 3.7 | 400000 | 61.8 | 40@10V | 180@10V | 180 | 6500@300V | Tube | 3 | TO-247 | TO | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SSM6P69NU,LF Trans MOSFET P-CH Si 20V 4A 6-Pin UDFN EP T/R Automotive AEC-Q101 |
Von 0,1109 € bis 0,1202 €
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Toshiba | MOSFETs | Small Signal | Si | P | Dual | Enhancement | 2 | 20 | 6 | 1.2 | 2000 | 4 | 45@10V | 1.5@4.5V | 480@10V | Tape and Reel | 6 | UDFN EP | DFN | No | Yes | AEC-Q101 | Yes | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SK2842
Trans MOSFET N-CH Si 500V 12A 3-Pin(3+Tab) TO-220NIS
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 500 | ±30 | 40000 | 12 | 520@10V | 45@10V | 45 | 2040@10V | 3 | TO-220NIS | TO | No | Unknown | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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TK10A80W,S4X
Trans MOSFET N-CH Si 800V 9.5A 3-Pin(3+Tab) TO-220SIS Tube
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Von 1,4338 € bis 1,5287 €
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 800 | ±20 | 4 | 40000 | 9.5 | 550@10V | 19@10V | 19 | 1150@300V | Tube | 3 | TO-220SIS | TO | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TD62004AFG(5,S)
Trans Darlington NPN 50V 0.5A 625mW 16-Pin SOP
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Toshiba | Darlington BJT | NPN | Array 7 | 50 | 7 | 0.5 | 625 | 1000@350mA@2V | 1.1@250uA@100mA|1.3@350uA@200mA|1.6@500uA@350mA | 0.13um | 16 | SOP | SO | No | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
GT30N135SRA,S1E
Trans IGBT Chip N-CH 1350V 60A 348W 3-Pin(3+Tab) TO-247 Tube
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Von 1,916 € bis 2,0974 €
pro Stück
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Toshiba | IGBT-Chip | N | Single | ±25 | 1350 | 1 | 60 | 348 | Tube | 3 | TO-247 | TO | No | No | No | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TK50J60U(Q) Trans MOSFET N-CH Si 600V 50A 3-Pin TO-3PW |
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 600 | ±30 | 5 | 400000 | 50 | 65@10V | 67@10V | 67 | 4050@100V | 3 | TO-3PW | TO | No | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SC4116-GR,LF(B
Trans GP BJT NPN 50V 0.15A 100mW 3-Pin USM
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Toshiba | GP BJT | NPN | Bipolar Small Signal | Si | Single | 50 | 60 | 1 | 5 | 0.15 | 100 | 200 to 300 | 200@2mA@6V | 0.25@10mA@100mA | 80 | 3 | USM | No | No | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SD2695(F) Trans Darlington NPN 70V 2A 900mW 3-Pin TO-92 Mod |
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Toshiba | Darlington BJT | NPN | Single | 70 | 50 | 1 | 2 | 8 | 2@1mA@1A | 900 | 2000@1A@2V | 1.5@1mA@1A | 3 | TO-92 Mod | TO | No | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MKZ16V,LM
Zener Diode Silicon Epitaxial Planar
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Von 0,0174 € bis 0,019 €
pro Stück
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Toshiba | Zener | 3 | SOT-23 | SOT | No | No | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SSM3K16FU(TE85L,F)
Trans MOSFET N-CH Si 20V 0.1A 3-Pin USM T/R
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Toshiba | MOSFETs | Small Signal | Si | N | Single | Enhancement | 1 | 20 | ±10 | 150 | 0.1 | 3000@4V | 9.3@3V | Tape and Reel | 3 | USM | No | Unknown | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
RN2706JE(TE85L,F)
Trans Digital BJT PNP 50V 0.1A 100mW 5-Pin ESV T/R
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Toshiba | Digital-BJT | PNP | Dual Common Emitter | 50 | 0.1 | 4.7 | 0.1 | 100 | 80@10mA@5V | 0.3@0.25mA@5mA | Tape and Reel | 5 | ESV | SOT | No | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TK20J60W,S1VQ(O
Trans MOSFET N-CH Si 600V 20A 3-Pin(3+Tab) TO-3PN Tube
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 600 | ±30 | 3.7 | 165000 | 20 | 155@10V | 48@10V | 48 | 1680@300V | Tube | 3 | TO-3PN | TO | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
1SS360(TE85L,F)
Diode Switching Si 85V 0.1A 3-Pin SSM T/R
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Toshiba | Gleichrichter | Switching Diode | Si | Dual Common Anode | 85 | 0.1 | 2 | 1.2 | 0.5 | 100 | 4 | 4 | Tape and Reel | 3 | SSM | No | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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TK40A06N1,S4X
Trans MOSFET N-CH Si 60V 43A 3-Pin(3+Tab) TO-220SIS Magazine
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Von 0,5007 € bis 0,5426 €
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 60 | ±20 | 4 | 30000 | 43 | 15@10V | 23@10V | 23 | 1700@30V | U-MOS VIII-H | Magazine | 3 | TO-220SIS | TO | No | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
CUS08F30,H3F(B
Diode Small Signal Schottky 30V 0.8A
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Toshiba | Gleichrichter | Small Signal Schottky Diode | Single | 30 | 0.8 | 5 | 0.45 | 50 | No | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
CMH02A(TE12L,Q)
Diode Switching Si 400V 3A 2-Pin M-FLAT T/R
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Toshiba | Gleichrichter | Switching Diode | Si | Single | 400 | 3 | 30 | 1.8 | 10 | 35 | Tape and Reel | 2 | M-FLAT | No | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MKZ6V8,LM
Zener Diode Silicon Epitaxial Planar
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Von 0,033 € bis 0,0335 €
pro Stück
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Toshiba | Zener | 3 | SOT-23 | SOT | No | No | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
RN1406,LF(B
Trans Digital BJT NPN 50V 0.1A 200mW 3-Pin S-Mini T/R
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Toshiba | Digital-BJT | NPN | Single | 50 | 0.1 | 4.7 | 0.1 | 200 | 80@10mA@5V | 0.3@0.25mA@5mA | Tape and Reel | 3 | S-Mini | SOT | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
RN1608(TE85L,F)
Trans Digital BJT NPN 50V 0.1A 300mW 6-Pin SM T/R
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Toshiba | Digital-BJT | NPN | Dual | 50 | 0.1 | 22 | 0.468 | 300 | 80@10mA@5V | 0.3@0.25mA@5mA | Tape and Reel | 6 | SM | SOT | No | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
1SS417CT(TPL3)
Diode Small Signal Schottky 45V 0.1A 2-Pin CST T/R
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Toshiba | Gleichrichter | Small Signal Schottky Diode | Single | 45 | 0.1 | 1 | 0.62 | 5 | 100 | Tape and Reel | 2 | CST | SOD | No | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
1SV279,H3F
Diode VAR Cap Single 15V 14pF 2-Pin ESC T/R
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Von 0,0926 € bis 0,0944 €
pro Stück
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Toshiba | Varaktors | VCO | UHF|VHF | Single | 15 | 0.003 | 2 | 2V/10V | 14@2V | Tape and Reel | 2 | ESC | SOD | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SSM6L40TU(TE85L,F)
Trans MOSFET N/P-CH Si 30V 1.6A/1.4A 6-Pin UF T/R
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Toshiba | MOSFETs | Small Signal | Si | N|P | Dual | Enhancement | 2 | 30 | ±20 | 2.6@N Channel|2@P Channel | 500 | 1.6@N Channel|1.4@P Channel | 122@10V@N Channel|226@10V@P Channel | 5.1@10V@N Channel|2.9@10V@P Channel | 5.1@N Channel|2.9@P Channel | 180@15V@N Channel|120@15V@P Channel | Tape and Reel | 6 | UF | No | No | No | No | No | EAR99 | No |