Toshiba Diodes, Transistors and Thyristors
| Teile-Nr. | Preis | Bestand | Hersteller | Kategorie | Type | Maximum Rate of Rise of Off-State Voltage - (V/us) | Category | Maximum Rate of Rise of On-State Current - (A/us) | Material | Frequency Band | Channel Type | Maximum Gate Trigger Voltage - (V) | Configuration | Channel Mode | Typical Zener Voltage - (V) | Repetitive Peak Reverse Voltage - (V) | Peak Reverse Repetitive Voltage - (V) | Maximum Reverse Voltage - (V) | Maximum Gate Trigger Current - (mA) | Maximum Gate Emitter Voltage - (V) | Maximum Collector-Emitter Voltage - (V) | Zener Voltage Tolerance | Surge Current Rating - (A) | Maximum Reverse Current - (uA) | Maximum Continuous Forward Current - (A) | Maximum Collector-Base Voltage - (V) | Number of Elements per Chip | Minimum Tuning Ratio | Maximum Holding Current - (mA) | Maximum Drain-Gate Voltage - (V) | Maximum Continuous DC Collector Current - (A) | Maximum Base-Emitter Voltage - (V) | Typical Input Resistance - (kOhm) | Tuning Ratio Test Condition | Test Current - (mA) | Peak Non-Repetitive Forward Surge Current - (A) | Maximum Series Resistance @ Maximum IF - (Ohm) | Maximum Forward Voltage - (V) | Maximum Drain-Source Voltage - (V) | Maximum Base-Emitter Saturation Voltage - (V) | Typical Resistor Ratio | Peak Reverse Current - (uA) | Maximum Reverse Leakage Current - (uA) | Maximum Gate-Source Voltage - (V) | Maximum DC Collector Current - (A) | Peak On-State Voltage - (V) | Operational Bias Conditions | Minimum Diode Capacitance - (pF) | Maximum Junction Ambient Thermal Resistance | Maximum Gate Threshold Voltage - (V) | Maximum Gate Peak Inverse Voltage - (V) | Maximum Zener Impedance - (Ohm) | Maximum Power Dissipation - (mW) | Maximum Power Dissipation @ 25C - (mW) | Maximum Diode Capacitance - (pF) | Maximum Continuous Drain Current - (A) | RMS On-State Current - (A) | Repetitive Peak Forward Blocking Voltage - (V) | Rated Average On-State Current - (A) | Peak Reverse Recovery Time - (ns) | Minimum DC Current Gain Range | Minimum DC Current Gain | Maximum Drain-Source Resistance - (mOhm) | Typical Gate Charge @ Vgs - (nC) | Repetitive Peak Off-State Current - (mA) | Maximum Junction Case Thermal Resistance | Typical Gate Charge @ 10V - (nC) | Typical Output Capacitance - (pF) | Typical Input Capacitance @ Vds - (pF) | Typical Power Gain - (dB) | Maximum Output Power - (W) | Maximum Collector-Emitter Saturation Voltage - (V) | Maximum Frequency - (MHz) | Typical 3rd Order Intercept Point - (dBm) | Maximum Transition Frequency - (MHz) | Maximum Noise Figure - (dB) | Typical Drain-Source Resistance @ 25°C - (mOhm) | Process Technology | Packaging | Pin Count | Supplier Package | Standard Package Name | CECC Qualified | ESD Protection | Military | AEC Qualified | AEC Qualified Number | Auto motive | P PAP | ECCN Code | SVHC | SVHC Exceeds Threshold |
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TK65A10N1,S4X
Trans MOSFET N-CH Si 100V 148A 3-Pin(3+Tab) TO-220SIS Magazine
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Von 2,7872 € bis 2,9914 €
pro Stück
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 100 | ±20 | 4 | 45000 | 148 | 4.8@10V | 81@10V | 81 | 5400@50V | Magazine | 3 | TO-220SIS | TO | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
CMS08(TE12L,Q,M)
Diode Schottky 30V 1A 2-Pin M-FLAT T/R
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Toshiba | Gleichrichter | Schottky Diode | Single | 30 | 1@Ta=51C | 25 | 0.37 | 1500 | Tape and Reel | 2 | M-FLAT | No | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
CRZ15(TE85L,Q)
Zener Diode Single 15V 10% 30Ohm 700mW 2-Pin S-FLAT T/R
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Toshiba | Zener | Voltage Regulator | Single | 15 | 10% | 10 | 10 | 30 | 700 | 700 | Tape and Reel | 2 | S-FLAT | No | Unknown | No | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SSM3J133TU,LF(B
Trans MOSFET P-CH Si 20V 5.5A 3-Pin UFM T/R
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Toshiba | MOSFETs | Small Signal | Si | P | Single | Enhancement | 1 | 20 | ±8 | 1000 | 5.5 | 29.8@4.5V | 12.8@4.5V | 840@10V | Tape and Reel | 3 | UFM | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SK364-V(F)
Trans JFET N-CH Si 3-Pin TO-92
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Toshiba | JFETs | Si | N | Single | -40 | 400 | 50000(Typ) | 3 | TO-92 | TO | No | No | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
CUS02(T5L,TEM,Q)
Diode Schottky 30V 1A 2-Pin US-FLAT T/R
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Toshiba | Gleichrichter | Schottky Diode | Single | 30 | 1@Ta=52C | 20 | 0.45@0.7A | 100 | Tape and Reel | 2 | US-FLAT | No | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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CMG02(TE12L,Q)
Diode Si 400V 2A 2-Pin M-FLAT T/R Automotive AEC-Q101
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Toshiba | Gleichrichter | Si | Single | 400 | 2 | 80 | 1.1 | 10 | Tape and Reel | 2 | M-FLAT | No | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
RN2401(TE85L,F)
Trans Digital BJT PNP 50V 0.1A 200mW 3-Pin S-Mini T/R
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Toshiba | Digital-BJT | PNP | Single | 50 | 0.1 | 4.7 | 1 | 200 | 30 to 50 | 30@10mA@5V | 0.3@0.25mA@5mA | Tape and Reel | 3 | S-Mini | SOT | No | Unknown | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| U1GWJ44(N,TE12L,Q) Diode Schottky 40V 1A 2-Pin I-FLAT T/R |
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Toshiba | Gleichrichter | Schottky Diode | Single | 40 | 1 | 27 | 0.55 | 500 | 35 | Tape and Reel | 2 | I-FLAT | No | No | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SM16GZ47(F)
TRIAC 400V 165A 3-Pin(3+Tab) TO-220NIS
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Toshiba | TRIACs | 1.5 | 400 | 30 | 50 | 1.5@25A | 400 | 0.02 | 3 | TO-220NIS | TO | No | No | No | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
20FL2C41A(F)
Diode Switching 300V 20A 3-Pin(3+Tab) TO-3PN
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Toshiba | Gleichrichter | Switching Diode | Dual Common Cathode | 300 | 20 | 110 | 1.3@10A | 50 | 35 | 3 | TO-3PN | TO | No | No | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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2SC5084-Y(TE85L,F
Trans RF BJT NPN 12V 0.08A 150mW 3-Pin S-Mini T/R
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Toshiba | HF-BJT | NPN | Si | Single | 12 | 20 | 1 | 3 | 0.08 | 10V/20mA | 150 | 120 to 200 | 120@20mA@10V | 1 | 16.5 | 7000(Typ) | 2 | Tape and Reel | 3 | S-Mini | SOT | No | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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CRS12(TE85L,Q)
Diode Schottky 60V 1A 2-Pin S-FLAT T/R
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Toshiba | Gleichrichter | Schottky Diode | Single | 60 | 1@Ta=73C | 20 | 0.58 | 100 | Tape and Reel | 2 | S-FLAT | No | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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CRY68(TE85L,Q)
Zener Diode Single 6.8V 9% 60Ohm 700mW 2-Pin S-FLAT T/R
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Toshiba | Zener | Voltage Regulator | Single | 6.8 | 9% | 10 | 10 | 60 | 700 | 700 | Tape and Reel | 2 | S-FLAT | No | Unknown | No | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TPN1110ENH,L1Q
Trans MOSFET N-CH Si 200V 13A 8-Pin TSON EP Advance T/R
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Von 0,5493 € bis 0,5952 €
pro Stück
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single Quad Drain Triple Source | Enhancement | 1 | 200 | ±20 | 4 | 1900 | 13 | 114@10V | 7@10V | 7 | 460@100V | Tape and Reel | 8 | TSON EP Advance | SON | No | No | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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1SS187,LF
Diode Switching Si 85V 0.1A 3-Pin S-Mini T/R Automotive AEC-Q101
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Von 0,0214 € bis 0,0233 €
pro Stück
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Toshiba | Gleichrichter | Switching Diode | Si | Single | 85 | 0.1 | 2 | 1.2 | 0.5 | 150 | 4 | 4 | Tape and Reel | 3 | S-Mini | SOT | No | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TW083N65C,S1F(S
Trans MOSFET N-CH SiC 650V 30A 3-Pin(3+Tab) TO-247
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Toshiba | MOSFETs | Power MOSFET | SiC | N | Single | Enhancement | 1 | 650 | 25 | 111000 | 30 | 113@18V | 28@18V | 873@400V | 3 | TO-247 | TO | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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2SD2257,Q(J
Trans Darlington NPN 100V 3A 2000mW 3-Pin(3+Tab) TO-220NIS
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Toshiba | Darlington BJT | NPN | Single | 100 | 100 | 1 | 3 | 8 | 2@1.5mA@1.5A | 2000 | 2000@1A@2V|2000@2A@2V | 1.5@1.5mA@1.5A | 3 | TO-220NIS | TO | No | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SA1426-Y(F) Trans GP BJT PNP 30V 0.8A |
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Toshiba | GP BJT | PNP | Si | Single | 30 | 1 | 0.8 | 300 to 500 | 320(Max) | 3 | MSTM | No | No | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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CMS10(TE12L,Q)
Diode Schottky 40V 1A 2-Pin M-FLAT T/R
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Toshiba | Gleichrichter | Schottky Diode | Single | 40 | 1@Ta=21C | 25 | 0.55 | 500 | Tape and Reel | 2 | M-FLAT | No | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
1SS367,H3F
Diode Small Signal Schottky Si 15V 0.1A 2-Pin USC T/R Automotive AEC-Q101
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Von 0,0201 € bis 0,0219 €
pro Stück
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Toshiba | Gleichrichter | Small Signal Schottky Diode | Si | Single | 15 | 0.1 | 1 | 0.5@0.1A | 20 | 200 | 40 | Tape and Reel | 2 | USC | SOD | Unknown | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SK1486(Q)
Trans MOSFET N-CH Si 300V 32A 3-Pin(3+Tab) TO-3PL
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 300 | ±30 | 200000 | 32 | 95@10V | 140@10V | 140 | 3500@10V | 3 | TO-3PL | TO | No | No | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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02CZ7.5-Y(TE85L,F)
Zener Diode Single 7.215V 2.5% 23Ohm 200mW 3-Pin S-Mini T/R
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Toshiba | Zener | Voltage Regulator | Single | 7.215 | 2.5% | 5 | 0.5 | 23 | 200 | 200 | Tape and Reel | 3 | S-Mini | SOT | No | Unknown | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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TK4R3A06PL,S4X
Trans MOSFET N-CH Si 60V 68A 3-Pin(3+Tab) TO-220SIS Tube
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Von 0,5413 € bis 0,5867 €
pro Stück
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 60 | ±20 | 36000 | 68 | 4.3@10V | 23.9@4.5V|48.2@10V | 48.2 | 3280@30V | 3.3@10V|5.2@4.5V | Tube | 3 | TO-220SIS | TO | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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1SS181,LF(B
Diode Switching Si 85V 0.1A 3-Pin S-Mini Automotive AEC-Q101
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Toshiba | Gleichrichter | Switching Diode | Si | Dual Common Anode | 85 | 0.1 | 2 | 1.2 | 0.5 | 150 | 4 | 4 | 3 | S-Mini | SOT | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No |