Toshiba Diodes, Transistors and Thyristors
| Teile-Nr. | Preis | Bestand | Hersteller | Kategorie | Type | Maximum Rate of Rise of Off-State Voltage - (V/us) | Category | Maximum Rate of Rise of On-State Current - (A/us) | Material | Frequency Band | Channel Type | Maximum Gate Trigger Voltage - (V) | Configuration | Channel Mode | Typical Zener Voltage - (V) | Repetitive Peak Reverse Voltage - (V) | Peak Reverse Repetitive Voltage - (V) | Maximum Reverse Voltage - (V) | Maximum Gate Trigger Current - (mA) | Maximum Gate Emitter Voltage - (V) | Maximum Collector-Emitter Voltage - (V) | Zener Voltage Tolerance | Surge Current Rating - (A) | Maximum Reverse Current - (uA) | Maximum Continuous Forward Current - (A) | Maximum Collector-Base Voltage - (V) | Number of Elements per Chip | Minimum Tuning Ratio | Maximum Holding Current - (mA) | Maximum Drain-Gate Voltage - (V) | Maximum Continuous DC Collector Current - (A) | Maximum Base-Emitter Voltage - (V) | Typical Input Resistance - (kOhm) | Tuning Ratio Test Condition | Test Current - (mA) | Peak Non-Repetitive Forward Surge Current - (A) | Maximum Series Resistance @ Maximum IF - (Ohm) | Maximum Forward Voltage - (V) | Maximum Drain-Source Voltage - (V) | Maximum Base-Emitter Saturation Voltage - (V) | Typical Resistor Ratio | Peak Reverse Current - (uA) | Maximum Reverse Leakage Current - (uA) | Maximum Gate-Source Voltage - (V) | Maximum DC Collector Current - (A) | Peak On-State Voltage - (V) | Operational Bias Conditions | Minimum Diode Capacitance - (pF) | Maximum Junction Ambient Thermal Resistance | Maximum Gate Threshold Voltage - (V) | Maximum Gate Peak Inverse Voltage - (V) | Maximum Zener Impedance - (Ohm) | Maximum Power Dissipation - (mW) | Maximum Power Dissipation @ 25C - (mW) | Maximum Diode Capacitance - (pF) | Maximum Continuous Drain Current - (A) | RMS On-State Current - (A) | Repetitive Peak Forward Blocking Voltage - (V) | Rated Average On-State Current - (A) | Peak Reverse Recovery Time - (ns) | Minimum DC Current Gain Range | Minimum DC Current Gain | Maximum Drain-Source Resistance - (mOhm) | Typical Gate Charge @ Vgs - (nC) | Repetitive Peak Off-State Current - (mA) | Maximum Junction Case Thermal Resistance | Typical Gate Charge @ 10V - (nC) | Typical Output Capacitance - (pF) | Typical Input Capacitance @ Vds - (pF) | Typical Power Gain - (dB) | Maximum Output Power - (W) | Maximum Collector-Emitter Saturation Voltage - (V) | Maximum Frequency - (MHz) | Typical 3rd Order Intercept Point - (dBm) | Maximum Transition Frequency - (MHz) | Maximum Noise Figure - (dB) | Typical Drain-Source Resistance @ 25°C - (mOhm) | Process Technology | Packaging | Pin Count | Supplier Package | Standard Package Name | CECC Qualified | ESD Protection | Military | AEC Qualified | AEC Qualified Number | Auto motive | P PAP | ECCN Code | SVHC | SVHC Exceeds Threshold |
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| 2SK3320-GR(TE85L,F Field Effect Transistor Silicon N Channel Junction Type |
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Toshiba | JFETs | 5 | USV | SOT | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TK40S06N1L,LQ
Trans MOSFET N-CH Si 60V 40A 3-Pin(2+Tab) DPAK+ T/R Automotive AEC-Q101
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Von 0,3116 € bis 0,3377 €
pro Stück
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 60 | ±20 | 2.5 | 88200 | 40 | 10.5@10V | 26@10V | 26 | 1650@10V | 8.7@10V|12.3@4.5V | Tape and Reel | 3 | DPAK+ | TO | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
RN1904,LF(CT
Trans Digital BJT NPN 50V 0.1A 200mW 6-Pin US T/R Automotive AEC-Q101
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Von 0,0361 € bis 0,0393 €
pro Stück
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Toshiba | Digital-BJT | NPN | Dual | 50 | 0.1 | 47 | 1 | 200 | 80@10mA@5V | 0.3@0.25mA@5mA | Tape and Reel | 6 | US | No | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
RN2405,LF(T
Trans Digital BJT PNP 50V 0.1A 200mW 3-Pin S-Mini T/R
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Toshiba | Digital-BJT | PNP | Single | 50 | 0.1 | 2.2 | 0.0468 | 200 | 50 to 120 | 80@10mA@5V | 0.3@0.25mA@5mA | Tape and Reel | 3 | S-Mini | SOT | No | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TK60J25D,S1Q(O
Trans MOSFET N-CH Si 250V 60A 3-Pin(3+Tab) TO-3PN
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 250 | ±20 | 410000 | 60 | 38@10V | 160@10V | 7000@100V | 3 | TO-3PN | TO | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SK2953(F)
Trans MOSFET N-CH Si 600V 15A 3-Pin(3+Tab) TO-3P(N)IS
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 600 | ±30 | 90000 | 15 | 400@10V | 80@10V | 80 | 3520@25V | 3 | TO-3P(N)IS | No | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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TK100S04N1L,LQ
Trans MOSFET N-CH Si 40V 100A 3-Pin(2+Tab) DPAK+ T/R Automotive AEC-Q101
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Von 1,5467 € bis 1,5972 €
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 40 | ±20 | 2.5 | 180000 | 100 | 2.3@10V | 76@10V | 76 | 5490@10V | 1.9@10V|2.8@4.5V | Tape and Reel | 3 | DPAK+ | TO | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TK25S06N1L,LXHQ
Trans MOSFET N-CH Si 60V 25A 3-Pin(2+Tab) DPAK+ T/R Automotive AEC-Q101
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 60 | ±20 | 2.5 | 57000 | 25 | 18.5@10V | 15@10V | 15 | 855@10V | Tape and Reel | 3 | DPAK+ | TO | No | Yes | AEC-Q101 | Yes | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TD62003AFG (5,S)
Trans Darlington NPN 50V 0.5A 625mW 16-Pin SOP
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Toshiba | Darlington BJT | NPN | Array 7 | 50 | 7 | 0.5 | 625 | 1000@350mA@2V | 1.1@250uA@100mA|1.3@350uA@200mA|1.6@500uA@350mA | 0.13um | 16 | SOP | SO | No | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TPN5900CNH,L1Q
Trans MOSFET N-CH Si 150V 18A 8-Pin TSON EP Advance T/R
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Von 0,4362 € bis 0,4728 €
pro Stück
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single Quad Drain Triple Source | Enhancement | 1 | 150 | ±20 | 4 | 1900 | 18 | 59@10V | 7@10V | 7 | 460@75V | Tape and Reel | 8 | TSON EP Advance | SON | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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TJ80S04M3L,LXHQ
Trans MOSFET P-CH Si 40V 80A 3-Pin(2+Tab) DPAK+ T/R Automotive AEC-Q101
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Toshiba | MOSFETs | Power MOSFET | Si | P | Single | Enhancement | 1 | 40 | 10 | 3 | 100000 | 80 | 5.2@10V | 158@10V | 158 | 7770@10V | Tape and Reel | 3 | DPAK+ | TO | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SSM6N55NU,LF(T
Trans MOSFET N-CH Si 30V 4A 6-Pin UDFN EP T/R Automotive AEC-Q101
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Toshiba | MOSFETs | Power MOSFET | Si | N | Dual | Enhancement | 2 | 30 | ±20 | 2.5 | 2000 | 4 | 46@10V | 280@15V | Tape and Reel | 6 | UDFN EP | DFN | No | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SSM5N15FU(TE85L,F)
Trans MOSFET N-CH Si 30V 0.1A 5-Pin USV T/R
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Toshiba | MOSFETs | Small Signal | Si | N | Dual | Enhancement | 2 | 30 | ±20 | 200 | 0.1 | 4000@4V | 7.8@3V | Tape and Reel | 5 | USV | SOT | No | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SSM6N39TU(TE85L,F)
Trans MOSFET N-CH Si 20V 1.6A Automotive AEC-Q101 6-Pin UF T/R
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Toshiba | MOSFETs | Small Signal | Si | N | Dual | Enhancement | 2 | 20 | ±10 | 500 | 1.6 | 119@4V | 7.5@4V | 260@10V | Tape and Reel | 6 | UF | No | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SSM3J331R,LF(A
Trans MOSFET P-CH Si 20V 4A 3-Pin SOT-23F
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Toshiba | MOSFETs | Power MOSFET | Si | P | Single | Enhancement | 1 | 20 | ±8 | 1 | 2000 | 4 | 55@4.5V | 10.4@4.5V | 630@10V | 3 | SOT-23F | SOT | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TBAV99,LM(T
Diode Switching Si 85V 0.1A 3-Pin SOT-23 T/R
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Toshiba | Gleichrichter | Switching Diode | Si | Dual Series | 85 | 0.1 | 2 | 1.25@0.15A | 0.5 | 320 | 1.5 | 4 | Tape and Reel | 3 | SOT-23 | SOT | No | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SSM3J134TU(TE85L)
Trans MOSFET P-CH Si 20V 3.2A 3-Pin UFM
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Toshiba | MOSFETs | Small Signal | Si | P | Single | Enhancement | 1 | 20 | ±8 | 1 | 500 | 3.2 | 93@4.5V | 4.7@4.5V | 290@10V | 3 | UFM | No | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SSM3K123TU(T5L,T)
Trans MOSFET N-CH Si 20V 4.2A 3-Pin UFM T/R
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Toshiba | MOSFETs | Small Signal | Si | N | Single | Enhancement | 1 | 20 | ±10 | 800 | 4.2 | 28@4V | 13.6@4V | 1010@10V | Tape and Reel | 3 | UFM | No | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SSM6J512NU,LF(T
Trans MOSFET P-CH Si 12V 10A 6-Pin UDFN EP T/R
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Toshiba | MOSFETs | Power MOSFET | Si | P | Single Quad Drain | Enhancement | 1 | 12 | ±10 | 2500 | 10 | 16.2@8V | 19.5@4.5V | 1400@6V | Tape and Reel | 6 | UDFN EP | DFN | No | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SSM3K17FU,LF(T
Trans MOSFET N-CH Si 50V 0.1A 3-Pin USM T/R
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Toshiba | MOSFETs | Small Signal | Si | N | Single | Enhancement | 1 | 50 | ±7 | 1.5 | 150 | 0.1 | 20000@4V | 7@3V | Tape and Reel | 3 | USM | No | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SSM6P39TU,LF(T
Trans MOSFET P-CH Si 20V 1.5A Automotive AEC-Q101 6-Pin UF T/R
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Toshiba | MOSFETs | Small Signal | Si | P | Dual | Enhancement | 2 | 20 | ±8 | 500 | 1.5 | 213@4V | 6.4@4V | 250@10V | Tape and Reel | 6 | UF | No | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SSM3K17FU(TE85L,F)
Trans MOSFET N-CH Si 50V 0.1A 3-Pin USM T/R
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Toshiba | MOSFETs | Small Signal | Si | N | Single | Enhancement | 1 | 50 | ±7 | 1.5 | 150 | 0.1 | 20000@4V | 7@3V | Tape and Reel | 3 | USM | No | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SSM3J36MFV(TPL3)
Trans MOSFET P-CH Si 20V 0.33A 3-Pin VESM T/R
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Toshiba | MOSFETs | Small Signal | Si | P | Single | Enhancement | 1 | 20 | ±8 | 150 | 0.33 | 1310@4.5V | 1.2@4V | 43@10V | Tape and Reel | 3 | VESM | SOT | No | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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TBAV99,LM
Diode Switching Si 85V 0.1A 3-Pin SOT-23 T/R
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Toshiba | Gleichrichter | Switching Diode | Si | Dual Series | 85 | 0.1 | 2 | 1.25@0.15A | 0.5 | 320 | 1.5 | 4 | Tape and Reel | 3 | SOT-23 | SOT | No | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SSM3K15F,LF(T
Trans MOSFET N-CH Si 30V 0.1A 3-Pin S-Mini T/R
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Toshiba | MOSFETs | Small Signal | Si | N | Single | Enhancement | 1 | 30 | ±20 | 1.5 | 200 | 0.1 | 4000@4V | 7.8@3V | Tape and Reel | 3 | S-Mini | SOT | No | Unknown | No | No | No | No | EAR99 | No |