Toshiba Diodes, Transistors and Thyristors
| Teile-Nr. | Preis | Bestand | Hersteller | Kategorie | Type | Material | Category | Maximum Rate of Rise of On-State Current - (A/us) | Maximum Rate of Rise of Off-State Voltage - (V/us) | Frequency Band | Channel Type | Maximum Reverse Voltage - (V) | Maximum Gate Trigger Voltage - (V) | Configuration | Channel Mode | Typical Zener Voltage - (V) | Peak Reverse Repetitive Voltage - (V) | Number of Elements per Chip | Maximum Gate Emitter Voltage - (V) | Maximum Collector-Emitter Voltage - (V) | Maximum Base-Emitter Saturation Voltage - (V) | Zener Voltage Tolerance | Surge Current Rating - (A) | Peak On-State Voltage - (V) | Maximum Reverse Current - (uA) | Maximum Gate Trigger Current - (mA) | Maximum Continuous Forward Current - (A) | Maximum Continuous DC Collector Current - (mA) | Maximum Collector-Base Voltage - (V) | Maximum Drain-Gate Voltage - (V) | Typical Input Resistance - (kOhm) | Test Current - (mA) | Rated Average On-State Current - (A) | Peak Non-Repetitive Forward Surge Current - (A) | Maximum Series Resistance @ Maximum IF - (Ohm) | Maximum Power Dissipation - (mW) | Maximum Holding Current - (mA) | Maximum Drain-Source Voltage - (V) | Maximum Continuous Drain Current - (mA) | Maximum Base-Emitter Voltage - (V) | Typical Resistor Ratio | Repetitive Peak Reverse Voltage - (V) | Maximum Reverse Leakage Current - (uA) | Maximum Gate-Source Voltage - (V) | Maximum Forward Voltage - (V) | Maximum DC Collector Current - (A) | Peak Reverse Current - (uA) | Operational Bias Conditions | Minimum Diode Capacitance - (pF) | Maximum Junction Ambient Thermal Resistance | Maximum Gate Threshold Voltage - (V) | Maximum Gate Peak Inverse Voltage - (V) | Maximum Diode Capacitance - (pF) | Repetitive Peak Forward Blocking Voltage - (V) | Maximum Zener Impedance - (Ohm) | Maximum Power Dissipation @ 25C - (mW) | Peak Reverse Recovery Time - (ns) | Minimum DC Current Gain Range | Minimum DC Current Gain | Maximum Drain-Source Resistance - (mOhm) | Typical Gate Charge @ Vgs - (nC) | RMS On-State Current - (A) | Maximum Junction Case Thermal Resistance | Typical Input Capacitance - (pF) | Typical Gate Charge @ 10V - (nC) | Repetitive Peak Off-State Current - (mA) | Maximum Transition Frequency - (MHz) | Typical Output Capacitance - (pF) | Typical Input Capacitance @ Vds - (pF) | Maximum Output Power - (W) | Maximum Collector-Emitter Saturation Voltage - (V) | Maximum Frequency - (MHz) | Typical Power Gain - (dB) | Typical 3rd Order Intercept Point - (dBm) | Maximum Noise Figure - (dB) | Maximum Turn-On Time - (ns) | Typical Drain-Source Resistance @ 25°C - (mOhm) | Process Technology | Packaging | Pin Count | Supplier Package | Standard Package Name | CECC Qualified | ESD Protection | Military | AEC Qualified | AEC Qualified Number | Auto motive | P PAP | ECCN Code | SVHC | SVHC Exceeds Threshold |
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RN1406,LF
Trans Digital BJT NPN 50V 0.1A 200mW 3-Pin S-Mini T/R Automotive AEC-Q101
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Toshiba | Digital-BJT | NPN | Single | 50 | 0.1 | 4.7 | 200 | 0.1 | 80@10mA@5V | 0.3@0.25mA@5mA | Tape and Reel | 3 | S-Mini | SOT | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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RN2427TE85LF
Trans Digital BJT PNP 50V 0.8A 200mW 3-Pin S-Mini T/R
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Von 0,0568 € bis 0,0687 €
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Toshiba | Digital-BJT | PNP | Single | 50 | 0.8 | 2.2 | 200 | 0.22 | 90@100mA@1V | 0.25@1mA@50mA | Tape and Reel | 3 | S-Mini | SOT | No | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SSM3J134TU,LF
Trans MOSFET P-CH Si 20V 3.2A 3-Pin UFM T/R
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Von 0,0911 € bis 0,0992 €
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Toshiba | MOSFETs | Si | Small Signal | P | Single | Enhancement | 1 | 500 | 20 | 3.2 | ±8 | 1 | 93@4.5V | 4.7@4.5V | 290@10V | Tape and Reel | 3 | UFM | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TK20G60W,RVQ
Trans MOSFET N-CH Si 600V 20A 3-Pin(2+Tab) D2PAK T/R
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Toshiba | MOSFETs | Si | Power MOSFET | N | Single | Enhancement | 1 | 165000 | 600 | 20 | ±30 | 3.7 | 155@10V | 48@10V | 48 | 1680@300V | Tape and Reel | 3 | D2PAK | TO | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
CRS10I40B(TE85L,QM
Diode Schottky 40V 1A 2-Pin S-FLAT T/R
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Von 0,1061 € bis 0,1156 €
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Toshiba | Gleichrichter | Schottky Diode | Single | 40 | 1 | 25 | 0.45 | 100 | Tape and Reel | 2 | S-FLAT | No | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TPN11006NL,LQ(S
Trans MOSFET N-CH Si 60V 37A 8-Pin TSON EP Advance T/R
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Toshiba | MOSFETs | Si | Power MOSFET | N | Single Quad Drain Triple Source | Enhancement | 1 | 1900 | 60 | 37 | ±20 | 2.5 | 11.4@10V | 11.2@4.5V|23@10V | 23 | 1500@30V | Tape and Reel | 8 | TSON EP Advance | SON | No | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
CUS357,H3F(T
Diode Small Signal Schottky 45V 0.1A 2-Pin USC T/R
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Toshiba | Gleichrichter | Small Signal Schottky Diode | Single | 45 | 0.1 | 1 | 200 | 0.6 | 5 | Tape and Reel | 2 | USC | SOD | No | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
CMH01(TE12L,Q)
Diode Switching 200V 3A 2-Pin M-FLAT T/R
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Toshiba | Gleichrichter | Switching Diode | Single | 200 | 3 | 40 | 0.98 | 10 | 35 | Tape and Reel | 2 | M-FLAT | No | No | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SSM6N16FUTE85LF
Trans MOSFET N-CH Si 20V 0.1A 6-Pin US T/R
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Von 0,0599 € bis 0,0652 €
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Toshiba | MOSFETs | Si | Small Signal | N | Dual | Enhancement | 2 | 200 | 20 | 0.1 | ±10 | 3000@4V | 9.3@3V | Tape and Reel | 6 | US | No | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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CUS15S30,H3F
Diode Small Signal Schottky Si 30V 1.5A 2-Pin USC T/R
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Von 0,0436 € bis 0,0474 €
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Toshiba | Gleichrichter | Small Signal Schottky Diode | Si | Single | 30 | 1.5 | 5 | 0.4 | 500 | 200(Typ) | Tape and Reel | 2 | USC | SOD | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TPH3R003PL,LQ(S
Trans MOSFET N-CH Si 30V 134A 8-Pin SOP Advance
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Toshiba | MOSFETs | Si | Power MOSFET | N | Single Quad Drain Triple Source | Enhancement | 1 | 1800 | 30 | 134 | ±20 | 2.1 | 3000@10V | 24@4.5V|50@10V | 50 | 2940@15V | 8 | SOP Advance | SO | No | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TK16A60W,S4VX(M
Trans MOSFET N-CH Si 600V 15.8A 3-Pin(3+Tab) TO-220SIS Magazine
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Toshiba | MOSFETs | Si | Power MOSFET | N | Single | Enhancement | 1 | 40000 | 600 | 15.8 | ±30 | 190@10V | 38@10V | 38 | 1350@300V | Magazine | 3 | TO-220SIS | TO | No | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SSM6N7002KFU,LF(B
Trans MOSFET N-CH Si 60V 0.3A 6-Pin US Automotive AEC-Q101
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Toshiba | MOSFETs | Si | Small Signal | N | Dual | Enhancement | 2 | 500 | 60 | 0.3 | ±20 | 2.1 | 1500@10V | 0.39@4.5V | 26@10V | 6 | US | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TK160F10N1L,LQ
Trans MOSFET N-CH Si 100V 160A 3-Pin(2+Tab) TO-220SM(W) T/R Automotive AEC-Q101
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Von 1,7437 € bis 1,8023 €
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Toshiba | MOSFETs | Si | Power MOSFET | N | Single | Enhancement | 1 | 375000 | 100 | 160 | ±20 | 3.5 | 2.4@10V | 122@10V | 122 | 10100@10V | 2@10V|2.4@6V | Tape and Reel | 3 | TO-220SM(W) | TO | No | Yes | AEC-Q101 | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SSM3J355R,LF
Trans MOSFET P-CH Si 20V 6A 3-Pin SOT-23F T/R
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Von 0,0665 € bis 0,0726 €
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Toshiba | MOSFETs | Si | Power MOSFET | P | Single | Enhancement | 1 | 2000 | 20 | 6 | ±10 | 30.1@4.5V | 16.6@4.5V | 1030@10V | Tape and Reel | 3 | SOT-23F | SOT | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CUS05F40,H3F(T Schottky Barrier Diode Silicon Epitaxial |
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Toshiba | Gleichrichter | USC | No | No | No | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SSM3K7002KFU,LF
Trans MOSFET N-CH Si 60V 0.4A 3-Pin USM T/R Automotive AEC-Q101
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Von 0,0177 € bis 0,0193 €
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Toshiba | MOSFETs | Si | Small Signal | N | Single | Enhancement | 1 | 700 | 60 | 0.4 | ±20 | 1500@10V | 0.39@4.5V | 26@10V | Tape and Reel | 3 | USM | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RN1405,LF(B Bipolar Transistors Silicon NPN Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor) |
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Toshiba | Digital-BJT | 3 | S-Mini | SOT | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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RN1405,LF
Trans Digital BJT NPN 50V 0.1A 200mW 3-Pin S-Mini T/R Automotive AEC-Q101
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Von 0,0218 € bis 0,0237 €
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Toshiba | Digital-BJT | NPN | Single | 50 | 0.1 | 2.2 | 200 | 0.0468 | 80@10mA@5V | 0.3@0.25mA@5mA | Tape and Reel | 3 | S-Mini | SOT | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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RN2314(TE85L,F)
Trans Digital BJT PNP 50V 0.1A 100mW 3-Pin USM T/R
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Toshiba | Digital-BJT | PNP | Single | 50 | 0.1 | 1 | 100 | 0.1 | 50@10mA@5V | 0.3@0.25mA@5mA | Tape and Reel | 3 | USM | No | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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1SS302(TE85L,F)
Diode Switching 85V 0.1A 3-Pin USM T/R
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Toshiba | Gleichrichter | Switching Diode | Dual Series | 85 | 0.1 | 2 | 100 | 1.2 | 0.5 | 4 | Tape and Reel | 3 | USM | No | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
1SS307E,L3F
Diode Switching 85V 0.1A 2-Pin ESC T/R Automotive AEC-Q101
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Von 0,0177 € bis 0,0193 €
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Toshiba | Gleichrichter | 85 | 0.1 | 1.3@0.1A | Tape and Reel | 2 | ESC | SOD | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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1SS226,LF(B
Diode Switching Si 85V 0.1A 3-Pin S-Mini Automotive AEC-Q101
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Toshiba | Gleichrichter | Switching Diode | Si | Dual Series | 85 | 0.1 | 2 | 150 | 1.2 | 0.5 | 3 | 4 | 3 | S-Mini | SOT | No | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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1SS193,LF(B
Diode Switching Si 85V 0.1A 3-Pin S-Mini Automotive AEC-Q101
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Toshiba | Gleichrichter | Switching Diode | Si | Single | 85 | 0.1 | 2 | 150 | 1.2 | 0.5 | 3 | 4 | 3 | S-Mini | SOT | No | Unknown | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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1SS300(TE85L,F)
Diode Switching Si 85V 0.1A 3-Pin USM T/R
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Toshiba | Gleichrichter | Switching Diode | Si | Dual Common Anode | 85 | 0.1 | 2 | 200 | 1.2 | 0.5 | 4 | 4 | Tape and Reel | 3 | USM | No | No | No | No | No | EAR99 | No |