Toshiba Diodes, Transistors and Thyristors
| Teile-Nr. | Preis | Bestand | Hersteller | Kategorie | Type | Maximum Rate of Rise of Off-State Voltage - (V/us) | Category | Surge Current Rating - (A) | Material | Configuration | Channel Type | Maximum Reverse Voltage - (V) | Maximum Rate of Rise of On-State Current - (A/us) | Channel Mode | Typical Zener Voltage - (V) | Peak Reverse Repetitive Voltage - (V) | Maximum Gate Trigger Voltage - (V) | Maximum Gate Emitter Voltage - (V) | Maximum Collector-Emitter Voltage - (V) | Zener Voltage Tolerance | Maximum Reverse Current - (uA) | Maximum Gate Trigger Current - (mA) | Maximum Continuous Forward Current - (A) | Maximum Collector-Base Voltage - (V) | Repetitive Peak Forward Blocking Voltage - (V) | Number of Elements per Chip | Minimum Tuning Ratio | Maximum Holding Current - (mA) | Maximum Drain-Gate Voltage - (V) | Maximum Continuous DC Collector Current - (A) | Typical Input Resistance - (kOhm) | Tuning Ratio Test Condition | Test Current - (mA) | Peak Non-Repetitive Forward Surge Current - (A) | Maximum Series Resistance @ Maximum IF - (Ohm) | Maximum Forward Voltage - (V) | Maximum Drain-Source Voltage - (V) | Maximum Base-Emitter Voltage - (V) | Maximum Base-Emitter Saturation Voltage - (V) | Typical Resistor Ratio | Repetitive Peak Reverse Voltage - (V) | Peak Reverse Current - (uA) | Maximum Reverse Leakage Current - (uA) | Maximum Gate Peak Inverse Voltage - (V) | Maximum Gate-Source Voltage - (V) | Maximum DC Collector Current - (A) | Peak On-State Voltage - (V) | Operational Bias Conditions | Minimum Diode Capacitance - (pF) | Maximum Gate Threshold Voltage - (V) | Minimum DC Current Gain | Maximum Zener Impedance - (Ohm) | Maximum Power Dissipation @ 25C - (mW) | Maximum Diode Capacitance - (pF) | Maximum Continuous Drain Current - (A) | Rated Average On-State Current - (A) | Peak Reverse Recovery Time - (ns) | Minimum DC Current Gain Range | Typical Gate Charge @ Vgs - (nC) | RMS On-State Current - (A) | Repetitive Peak Off-State Current - (mA) | Maximum Junction Ambient Thermal Resistance | Frequency Band | Maximum Junction Case Thermal Resistance | Typical Input Capacitance - (pF) | Typical Gate Charge @ 10V - (nC) | Maximum Transition Frequency - (MHz) | Maximum Collector-Emitter Saturation Voltage - (V) | Typical Input Capacitance @ Vds - (pF) | Maximum Output Power - (W) | Typical Output Capacitance - (pF) | Maximum Power Dissipation - (mW) | Maximum Frequency - (MHz) | Maximum Drain-Source Resistance - (Ohm) | Typical Power Gain - (dB) | Typical 3rd Order Intercept Point - (dBm) | Maximum Noise Figure - (dB) | Maximum Turn-On Time - (ns) | Typical Drain-Source Resistance @ 25°C - (mOhm) | Process Technology | Packaging | Pin Count | Supplier Package | Standard Package Name | CECC Qualified | ESD Protection | Military | AEC Qualified | AEC Qualified Number | Auto motive | P PAP | ECCN Code | SVHC | SVHC Exceeds Threshold |
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| 2SA1930,Q(J Trans GP BJT PNP 180V 2A 20000mW 3-Pin(3+Tab) TO-220NIS |
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Toshiba | GP BJT | PNP | Bipolar Power | Si | Single | 180 | 180 | 1 | 5 | 2 | 50@1A@5V|100@0.1A@5V | 50 to 120 | 1@0.1A@1A | 20000 | 3 | TO-220NIS | TO | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SA1943-R(Q)
Trans GP BJT PNP 230V 15A 150000mW 3-Pin(3+Tab) TO-3PL
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Toshiba | GP BJT | PNP | Bipolar Power | Si | Single | 230 | 230 | 1 | 5 | 15 | 55@1A@5V | 50 to 120 | 3@0.8A@8A | 360 | 150000 | 3 | TO-3PL | TO | No | No | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TPH6400ENH,L1Q
Trans MOSFET N-CH Si 200V 21A 8-Pin SOP Advance
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Von 0,6402 € bis 0,6914 €
pro Stück
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Toshiba | MOSFETs | Power MOSFET | Si | Single Quad Drain Triple Source | N | Enhancement | 1 | 200 | ±20 | 4 | 21 | 11.2@10V | 78.1 | 2.19 | 11.2 | 810@100V | 90 | 2800 | 64@10V | 54@10V | 8 | SOP Advance | SO | No | Yes | No | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TPW4R008NH,L1Q Trans MOSFET N-CH Si 80V 116A 8-Pin DSOP EP Advance |
Von 1,0349 € bis 1,0974 €
pro Stück
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Toshiba | MOSFETs | Power MOSFET | Si | Single Quad Drain Triple Source | N | Enhancement | 1 | 80 | ±20 | 4 | 116 | 59@10V | 59 | 4100@40V | 2500 | 4@10V | 8 | DSOP EP Advance | SO | No | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
GT30J121(Q)
Trans IGBT Chip N-CH 600V 30A 170W 3-Pin(3+Tab) TO-3PN
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Bestand
200
1,2311 €
pro Stück
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Toshiba | IGBT-Chip | Single | N | ±20 | 600 | 30 | 170 | 3 | TO-3PN | TO | No | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TPWR6003PL,L1Q
Trans MOSFET N-CH Si 30V 412A 8-Pin DSOP EP Advance T/R
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1,1361 €
pro Stück
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Toshiba | MOSFETs | Power MOSFET | Si | Single Quad Drain Triple Source | N | Enhancement | 1 | 30 | ±20 | 2.1 | 412 | 110@10V|52@4.5V | 110 | 7700@15V | 3000 | 600@10V | Tape and Reel | 8 | DSOP EP Advance | SO | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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2SC5200-O(S1,F,S)
Trans GP BJT NPN 230V 15A 150000mW 3-Pin(3+Tab) TO-3PL Magazine
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Toshiba | GP BJT | NPN | Bipolar Power | Si | Single | 230 | 230 | 1 | 5 | 15 | 80@1A@5V | 50 to 120 | 3@0.8A@8A | 200 | 150000 | Magazine | 3 | TO-3PL | TO | No | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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GT25Q102(Q)
Trans IGBT Chip N-CH 1200V 25A 200W 3-Pin(3+Tab) TO-3PL
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Toshiba | IGBT-Chip | Single | N | ±20 | 1200 | 25 | 200 | 3 | TO-3PL | TO | No | Unknown | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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GT30J122A(STA1,E,D
Trans IGBT Chip N-CH 600V 30A 120W 3-Pin(3+Tab) TO-3PN Magazine
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Toshiba | IGBT-Chip | Single | N | ±25 | 600 | 30 | 120 | Magazine | 3 | TO-3PN | TO | No | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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GT50J121(Q)
Trans IGBT Chip N-CH 600V 50A 240W 3-Pin(3+Tab) TO-3PL
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Toshiba | IGBT-Chip | Single | N | ±20 | 600 | 50 | 240 | 3 | TO-3PL | TO | No | No | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
GT30J122(Q)
Trans IGBT Chip N-CH 600V 30A 75W 3-Pin(3+Tab) TO-3P(N)IS
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Toshiba | IGBT-Chip | Single | N | ±20 | 600 | 30 | 75 | 3 | TO-3P(N)IS | No | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
RN1404(TE85L,F)
Trans Digital BJT NPN 50V 0.1A 200mW 3-Pin S-Mini T/R
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Toshiba | Digital-BJT | NPN | Single | 50 | 0.1 | 47 | 1 | 80@10mA@5V | 0.3@0.25mA@5mA | 200 | Tape and Reel | 3 | S-Mini | SOT | No | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
GT15J341,S4X
Trans IGBT Chip N-CH 600V 15A 30W 3-Pin(3+Tab) TO-220SIS Magazine
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Von 0,8319 € bis 0,9016 €
pro Stück
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Toshiba | IGBT-Chip | Single | N | ±25 | 600 | 15 | 30 | Magazine | 3 | TO-220SIS | TO | No | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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GT30J341,Q
Trans IGBT Chip N-CH 600V 59A 230W 3-Pin(3+Tab) TO-3PN
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Toshiba | IGBT-Chip | Single | N | ±25 | 600 | 59 | 230 | 3 | TO-3PN | TO | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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GT40WR21,Q
Trans IGBT Chip N-CH 1800V 40A 375W 3-Pin(3+Tab) TO-3PN
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Von 5,1029 € bis 5,5298 €
pro Stück
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Toshiba | IGBT-Chip | Single | N | ±25 | 1800 | 40 | 375 | 3 | TO-3PN | TO | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TPN14006NH,L1Q(M
Trans MOSFET N-CH 60V 33A 8-Pin TSON Advance T/R
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Toshiba | MOSFETs | Power MOSFET | Single Quad Drain Triple Source | N | Enhancement | 1 | 60 | 33 | 16@10V | 16 | 18 | 1900 | 14@10V | U-MOS VIII-H | Tape and Reel | 8 | TSON Advance | SON | No | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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GT10Q101 (Q)
Trans IGBT Chip N-CH 1200V 10A 140W 3-Pin(3+Tab) TO-3PN
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Toshiba | IGBT-Chip | Single | N | ±20 | 1200 | 10 | 140 | 3 | TO-3PN | TO | No | No | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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GT15Q102(Q)
Trans IGBT Chip N-CH 1200V 15A 170W 3-Pin(3+Tab) TO-3PN
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Toshiba | IGBT-Chip | Single | N | ±20 | 1200 | 15 | 170 | 3 | TO-3PN | TO | No | No | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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GT30J301(Q)
Trans IGBT Chip N-CH 600V 30A 155W 3-Pin(3+Tab) TO-3PN
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Toshiba | IGBT-Chip | Single | N | ±20 | 600 | 30 | 155 | 3 | TO-3PN | TO | No | No | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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TPW3R70APL,L1Q
Trans MOSFET N-CH Si 100V 90A 8-Pin DSOP EP Advance T/R
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Von 1,0727 € bis 1,1376 €
pro Stück
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Toshiba | MOSFETs | Power MOSFET | Si | Single Quad Drain Triple Source | N | Enhancement | 1 | 100 | ±20 | 90 | 33@4.5V|67@10V | 4850@50V | 170000 | 3.7@10V | Tape and Reel | 8 | DSOP EP Advance | SO | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SC4117-BL(TE85L,F
Trans GP BJT NPN 120V 0.1A 100mW 3-Pin USM T/R
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Toshiba | GP BJT | NPN | Bipolar Small Signal | Si | Single | 120 | 120 | 1 | 5 | 0.1 | 350@2mA@6V | 300 to 500 | 0.3@1mA@10mA | 100 | 10 | Tape and Reel | 3 | USM | No | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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GT40WR21,Q(O
Trans IGBT Chip N-CH 1800V 40A 375W 3-Pin(3+Tab) TO-3PN
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Toshiba | IGBT-Chip | Single | N | ±25 | 1800 | 40 | 375 | 3 | TO-3PN | TO | No | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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GT60J323(Q)
Trans IGBT Chip N-CH 600V 60A 170W 3-Pin(3+Tab) TO-3PL
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Toshiba | IGBT-Chip | Single | N | ±25 | 600 | 60 | 170 | 3 | TO-3PL | TO | No | No | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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2SA1162-YTE85LF
Trans GP BJT PNP 50V 0.15A 150mW Automotive AEC-Q101 3-Pin S-Mini T/R
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Toshiba | GP BJT | PNP | Bipolar Small Signal | Si | Single | 50 | 50 | 1 | 5 | 0.15 | 120@2mA@6V | 120 to 200 | 0.3@10mA@100mA | 4 | 150 | 10 | Tape and Reel | 3 | S-Mini | SOT | No | Unknown | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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2SA1162-GRTE85LF
Trans GP BJT PNP 50V 0.15A 150mW Automotive AEC-Q101 3-Pin S-Mini T/R
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Toshiba | GP BJT | PNP | Bipolar Small Signal | Si | Single | 50 | 50 | 1 | 5 | 0.15 | 200@2mA@6V | 200 to 300 | 0.3@10mA@100mA | 4 | 150 | 10 | Tape and Reel | 3 | S-Mini | SOT | No | Unknown | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No |