Toshiba Diodes, Transistors and Thyristors
| Teile-Nr. | Preis | Bestand | Hersteller | Kategorie | Type | Category | Maximum Rate of Rise of On-State Current - (A/us) | Maximum Rate of Rise of Off-State Voltage - (V/us) | Material | Frequency Band | Channel Type | Repetitive Peak Off-State Current - (mA) | Configuration | Channel Mode | Typical Zener Voltage - (V) | Peak Reverse Repetitive Voltage - (V) | Maximum Reverse Voltage - (V) | Maximum Gate Trigger Voltage - (V) | Maximum Gate Emitter Voltage - (V) | Maximum Collector-Emitter Voltage - (V) | Zener Voltage Tolerance | Surge Current Rating - (A) | Number of Elements per Chip | Maximum Reverse Current - (uA) | Maximum Gate Trigger Current - (mA) | Maximum Continuous Forward Current - (mA) | Maximum Collector-Base Voltage - (V) | Minimum Tuning Ratio | Maximum Holding Current - (mA) | Maximum Drain-Gate Voltage - (V) | Maximum Base-Emitter Voltage - (V) | Typical Input Resistance - (kOhm) | Tuning Ratio Test Condition | Test Current - (mA) | Peak Non-Repetitive Forward Surge Current - (A) | Maximum Series Resistance @ Maximum IF - (Ohm) | Maximum Forward Voltage - (V) | Maximum Drain-Source Voltage - (V) | Maximum Base-Emitter Saturation Voltage - (V) | Typical Resistor Ratio | Repetitive Peak Reverse Voltage - (V) | Peak Reverse Current - (uA) | Maximum Reverse Leakage Current - (uA) | Maximum Gate-Source Voltage - (V) | Maximum DC Collector Current - (A) | Maximum Continuous DC Collector Current - (A) | Operational Bias Conditions | Minimum Diode Capacitance - (pF) | Maximum Gate Threshold Voltage - (V) | Maximum Gate Peak Inverse Voltage - (V) | Peak On-State Voltage - (V) | Maximum Zener Impedance - (Ohm) | Maximum Power Dissipation @ 25C - (mW) | Maximum Diode Capacitance - (pF) | Maximum Continuous Drain Current - (A) | Repetitive Peak Forward Blocking Voltage - (V) | Peak Reverse Recovery Time - (ns) | Minimum DC Current Gain Range | Minimum DC Current Gain | Maximum Drain-Source Resistance - (mOhm) | Typical Gate Charge @ Vgs - (nC) | Rated Average On-State Current - (A) | Maximum Junction Ambient Thermal Resistance | RMS On-State Current - (A) | Maximum Junction Case Thermal Resistance | Typical Input Capacitance - (pF) | Typical Gate Charge @ 10V - (nC) | Maximum Power Dissipation - (mW) | Maximum Collector-Emitter Saturation Voltage - (V) | Typical Output Capacitance - (pF) | Typical Input Capacitance @ Vds - (pF) | Maximum Output Power - (W) | Typical Power Gain - (dB) | Typical 3rd Order Intercept Point - (dBm) | Maximum Transition Frequency - (MHz) | Maximum Noise Figure - (dB) | Maximum Turn-On Time - (ns) | Typical Drain-Source Resistance @ 25°C - (mOhm) | Process Technology | Packaging | Pin Count | Supplier Package | Standard Package Name | CECC Qualified | ESD Protection | Military | AEC Qualified | AEC Qualified Number | Auto motive | P PAP | ECCN Code | SVHC | SVHC Exceeds Threshold |
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RN1005(F)
Trans Digital BJT NPN 50V 0.1A 400mW 3-Pin TO-92
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Toshiba | Digital-BJT | NPN | Single | 50 | 2.2 | 0.047 | 0.1 | 80@10mA@5V | 400 | 0.3@0.25mA@5mA | 3 | TO-92 | TO | No | No | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TK1K7A60F,S4X
Trans MOSFET N-CH Si 600V 4A 3-Pin(3+Tab) TO-220SIS Tube
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Von 0,3695 € bis 0,4004 €
pro Stück
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 600 | ±30 | 4 | 1700@10V | 16@10V | 35000 | 560@300V | Tube | 3 | TO-220SIS | TO | No | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TK4P60D,RQ
Trans MOSFET N-CH Si 600V 4A 3-Pin(2+Tab) DPAK T/R
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Von 0,3294 € bis 0,357 €
pro Stück
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 600 | ±30 | 4.4 | 4 | 1700@10V | 12@10V | 12 | 100000 | 600@25V | Tape and Reel | 3 | DPAK | TO | No | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
02CZ13-Y(TE85L,F)
Zener Diode Single 13.225V 2.5% 15Ohm 200mW 3-Pin S-Mini T/R
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Toshiba | Zener | Voltage Regulator | Single | 13.225 | 2.5% | 5 | 0.5 | 15 | 200 | 200 | Tape and Reel | 3 | S-Mini | SOT | No | Unknown | No | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TK20J50D(F)
Trans MOSFET N-CH Si 500V 20A 3-Pin(3+Tab) TO-3PN
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 500 | ±30 | 20 | 270@10V | 45@10V | 45 | 280000 | 2600@25V | 3 | TO-3PN | TO | No | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TK16G60W5,RVQ
Trans MOSFET N-CH Si 600V 15.8A 3-Pin(2+Tab) D2PAK T/R
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 600 | ±30 | 4.5 | 15.8 | 230@10V | 43@10V | 43 | 130000 | 1350@300V | Tape and Reel | 3 | D2PAK | TO | No | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SSM6N57NU,LF(B Trans MOSFET N-CH 30V 4A 6-Pin UDFN EP |
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Toshiba | MOSFETs | Small Signal | N | Dual | Enhancement | 2 | 30 | ±12 | 4 | 39.1@4.5V | 3.2@4.5V | 2000 | 310@15V | 6 | UDFN EP | DFN | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TK30S06K3L(T6L1,NQ
Trans MOSFET N-CH Si 60V 30A Automotive AEC-Q101 3-Pin(2+Tab) DPAK+ T/R
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 60 | ±20 | 30 | 18@10V | 28@10V | 28 | 58000 | 1350@10V | Tape and Reel | 3 | DPAK+ | TO | No | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SSM3J340R,LF
Trans MOSFET P-CH Si 30V 4A 3-Pin SOT-23F T/R
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Von 0,0454 € bis 0,054 €
pro Stück
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Toshiba | MOSFETs | Power MOSFET | Si | P | Single | Enhancement | 1 | 30 | 20 | 2.2 | 4 | 45@10V | 6.2@4.5V | 2000 | 492@10V | Tape and Reel | 3 | SOT-23F | SOT | Yes | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1SS226,LF(T Diode Switching Si 85V 0.1A 3-Pin S-Mini T/R Automotive AEC-Q101 |
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Toshiba | Gleichrichter | Switching Diode | Si | Dual Series | 85 | 0.1 | 2 | 1.2 | 0.5 | 3 | 4 | 150 | Tape and Reel | 3 | S-Mini | SOT | Unknown | Unknown | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MT3S111TU,LF(T
Trans RF BJT NPN 6V 0.1A 800mW 3-Pin UFM T/R
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Toshiba | HF-BJT | NPN | Si | Single | 6 | 1 | 0.6 | 0.1 | 5V/30mA | 200 to 300 | 200@30mA@5V | 800 | 1.45 | 18 | 32 | Tape and Reel | 3 | UFM | No | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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2SK4014(S5Q,J)
Trans MOSFET N-CH Si 900V 6A 3-Pin(3+Tab) TO-220NIS
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 900 | ±30 | 6 | 2000@10V | 45@10V | 45000 | 1400@25V | 3 | TO-220NIS | TO | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| U1JU44(TE12L,Q) Diode Switching 600V 1A 2-Pin I-FLAT T/R |
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Toshiba | Gleichrichter | Switching Diode | Single | 600 | 1 | 17 | 2 | 100 | 100 | Tape and Reel | 2 | I-FLAT | No | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
CTS05F40,L3F
Diode Small Signal Schottky Si 0.5A 2-Pin CST T/R
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Von 0,0297 € bis 0,0327 €
pro Stück
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Toshiba | Gleichrichter | Small Signal Schottky Diode | Si | Single | 0.5 | 2 | 0.81 | 15 | 28(Typ) | Tape and Reel | 2 | CST | SOD | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
RN1702(TE85L,F)
Trans Digital BJT NPN 50V 0.1A 200mW 5-Pin USV T/R
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Toshiba | Digital-BJT | NPN | Dual Common Emitter | 50 | 10 | 1 | 0.1 | 50@10mA@5V | 200 | 0.3@0.25mA@5mA | Tape and Reel | 5 | USV | SOT | No | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TK10E60W,S1VX
Trans MOSFET N-CH Si 600V 9.7A 3-Pin(3+Tab) TO-220 Tube
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Von 1,529 € bis 1,6577 €
pro Stück
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 600 | ±30 | 3.7 | 9.7 | 380@10V | 20@10V | 20 | 100000 | 700@300V | Tube | 3 | TO-220 | TO | No | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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TK28A65W,S5X
Trans MOSFET N-CH Si 650V 27.6A 3-Pin(3+Tab) TO-220SIS Tube
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Von 2,0127 € bis 2,1812 €
pro Stück
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 650 | ±30 | 27.6 | 110@10V | 75@10V | 75 | 45000 | 3000@300V | Tube | 3 | TO-220SIS | TO | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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TK3R3A06PL,S4X
Trans MOSFET N-CH Si 60V 80A 3-Pin(3+Tab) TO-220SIS Tube
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Von 0,8084 € bis 0,876 €
pro Stück
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 60 | ±20 | 80 | 3.3@10V | 35@4.5V|71@10V | 42000 | 5000@30V | Tube | 3 | TO-220SIS | TO | No | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CUHS20F40,H3F(T Diode Small Signal Schottky 2A 2-Pin US-H |
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Toshiba | Gleichrichter | Small Signal Schottky Diode | Single | 2 | 10 | 0.54 | 60 | 2 | US-H | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
02DZ5.1-Y(TPH3,F)
Zener Diode Single 5.105V 2.5% 70Ohm 200mW 2-Pin USC T/R
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Toshiba | Zener | Voltage Regulator | Single | 5.105 | 2.5% | 5 | 1 | 70 | 200 | 200 | Tape and Reel | 2 | USC | SOD | No | Unknown | No | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
CMS03(TE12L,Q)
Diode Schottky 30V 3A 2-Pin M-FLAT T/R
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Toshiba | Gleichrichter | Schottky Diode | Single | 30 | 3@Ta=28.4C | 40 | 0.45 | 500 | Tape and Reel | 2 | M-FLAT | No | No | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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TK13A50D(Q)
Trans MOSFET N-CH Si 500V 13A 3-Pin(3+Tab) TO-220SIS
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 500 | ±30 | 13 | 400@10V | 38@10V | 38 | 45000 | 1800@25V | 3 | TO-220SIS | TO | No | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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TK15A60D(Q)
Trans MOSFET N-CH Si 600V 15A 3-Pin(3+Tab) TO-220SIS
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 600 | ±30 | 4 | 15 | 370@10V | 45@10V | 45 | 50000 | 2600@25V | 3 | TO-220SIS | TO | No | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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2SK2915(Q)
Trans MOSFET N-CH Si 600V 16A 3-Pin(3+Tab) TO-3PN
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 600 | ±30 | 16 | 400@10V | 80@10V | 80 | 150000 | 3520@25V | 3 | TO-3PN | TO | No | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SK3767,S5Q(J) Trans MOSFET N-CH Si 600V 2A 3-Pin(3+Tab) TO-220NIS |
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 600 | ±30 | 2 | 4500@10V | 9@10V | 25000 | 320@10V | 3 | TO-220NIS | TO | No | No | No | EAR99 |