Toshiba Diodes, Transistors and Thyristors
| Teile-Nr. | Preis | Bestand | Hersteller | Kategorie | Type | Maximum Rate of Rise of Off-State Voltage - (V/us) | Category | Maximum Rate of Rise of On-State Current - (A/us) | Material | Frequency Band | Channel Type | Maximum Gate Trigger Voltage - (V) | Configuration | Channel Mode | Typical Zener Voltage - (V) | Repetitive Peak Reverse Voltage - (V) | Peak Reverse Repetitive Voltage - (V) | Maximum Reverse Voltage - (V) | Maximum Gate Trigger Current - (mA) | Maximum Gate Emitter Voltage - (V) | Maximum Collector-Emitter Voltage - (V) | Zener Voltage Tolerance | Surge Current Rating - (A) | Maximum Reverse Current - (uA) | Maximum Continuous Forward Current - (A) | Maximum Collector-Base Voltage - (V) | Number of Elements per Chip | Minimum Tuning Ratio | Maximum Holding Current - (mA) | Maximum Drain-Gate Voltage - (V) | Maximum Continuous DC Collector Current - (A) | Maximum Base-Emitter Voltage - (V) | Typical Input Resistance - (kOhm) | Tuning Ratio Test Condition | Test Current - (mA) | Peak Non-Repetitive Forward Surge Current - (A) | Maximum Series Resistance @ Maximum IF - (Ohm) | Maximum Forward Voltage - (V) | Maximum Drain-Source Voltage - (V) | Maximum Base-Emitter Saturation Voltage - (V) | Typical Resistor Ratio | Peak Reverse Current - (uA) | Maximum Reverse Leakage Current - (uA) | Maximum Gate-Source Voltage - (V) | Maximum DC Collector Current - (A) | Peak On-State Voltage - (V) | Operational Bias Conditions | Minimum Diode Capacitance - (pF) | Maximum Junction Ambient Thermal Resistance | Maximum Gate Threshold Voltage - (V) | Maximum Gate Peak Inverse Voltage - (V) | Maximum Zener Impedance - (Ohm) | Maximum Power Dissipation - (mW) | Maximum Power Dissipation @ 25C - (mW) | Maximum Diode Capacitance - (pF) | Maximum Continuous Drain Current - (A) | RMS On-State Current - (A) | Repetitive Peak Forward Blocking Voltage - (V) | Rated Average On-State Current - (A) | Peak Reverse Recovery Time - (ns) | Minimum DC Current Gain Range | Minimum DC Current Gain | Maximum Drain-Source Resistance - (mOhm) | Typical Gate Charge @ Vgs - (nC) | Repetitive Peak Off-State Current - (mA) | Maximum Junction Case Thermal Resistance | Typical Gate Charge @ 10V - (nC) | Typical Output Capacitance - (pF) | Typical Input Capacitance @ Vds - (pF) | Typical Power Gain - (dB) | Maximum Output Power - (W) | Maximum Collector-Emitter Saturation Voltage - (V) | Maximum Frequency - (MHz) | Typical 3rd Order Intercept Point - (dBm) | Maximum Transition Frequency - (MHz) | Maximum Noise Figure - (dB) | Typical Drain-Source Resistance @ 25°C - (mOhm) | Process Technology | Packaging | Pin Count | Supplier Package | Standard Package Name | CECC Qualified | ESD Protection | Military | AEC Qualified | AEC Qualified Number | Auto motive | P PAP | ECCN Code | SVHC | SVHC Exceeds Threshold |
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TPW3R70APL,L1Q
Trans MOSFET N-CH Si 100V 90A 8-Pin DSOP EP Advance T/R
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Von 1,0721 € bis 1,1452 €
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single Quad Drain Triple Source | Enhancement | 1 | 100 | ±20 | 170000 | 90 | 3.7@10V | 33@4.5V|67@10V | 4850@50V | Tape and Reel | 8 | DSOP EP Advance | SO | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SA1200-Y(TE12L,CF
Trans GP BJT PNP 150V 0.05A 800mW 4-Pin(3+Tab) PW-Mini T/R
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Toshiba | GP BJT | PNP | Bipolar Small Signal | Si | Single Dual Collector | 150 | 150 | 1 | 8 | 0.05 | 800 | 120 to 200 | 120@10mA@5V | 0.8@1mA@10mA | Tape and Reel | 4 | PW-Mini | SOT | No | Unknown | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TK12A60U(Q)
Trans MOSFET N-CH Si 600V 12A 3-Pin(3+Tab) TO-220SIS
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 600 | ±30 | 35000 | 12 | 400@10V | 14@10V | 14 | 720@10V | 3 | TO-220SIS | TO | No | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TK090Z65Z,S1F
Trans MOSFET N-CH Si 650V 30A 4-Pin(4+Tab) TO-247 Tube
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Von 2,9005 € bis 3,1129 €
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single Dual Source | Enhancement | 1 | 650 | ±30 | 230000 | 30 | 90@10V | 47@10V | 47 | 2780@300V | 75@10V | Tube | 4 | TO-247 | TO | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TK35N65W,S1F(S
Trans MOSFET N-CH Si 650V 35A 3-Pin(3+Tab) TO-247 Tube
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 650 | ±30 | 3.5 | 270000 | 35 | 80@10V | 100@10V | 100 | 4100@300V | Tube | 3 | TO-247 | TO | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
1SS389,L3F(T
Diode Small Signal Schottky Si 15V 0.1A 2-Pin ESC T/R
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Toshiba | Gleichrichter | Small Signal Schottky Diode | Si | Single | 15 | 0.1 | 1 | 0.5 | 20 | 150 | 40 | Tape and Reel | 2 | ESC | SOD | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CRS15(TE85L,Q) Diode Schottky 30V 3A 2-Pin S-FLAT T/R |
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Toshiba | Gleichrichter | Schottky Diode | Single | 30 | 3 | 30 | 0.52 | 50 | 2 | S-FLAT | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
RN1606(TE85L,F)
Trans Digital BJT NPN 50V 0.1A 300mW 6-Pin SM T/R
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Toshiba | Digital-BJT | NPN | Dual | 50 | 0.1 | 4.7 | 1 | 300 | 80@10mA@5V | 0.3@0.25mA@5mA | Tape and Reel | 6 | SM | SOT | No | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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HN1D02F(TE85L,F)
Diode Switching 85V 0.1A 6-Pin SM T/R
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Toshiba | Gleichrichter | Switching Diode | Double Dual Common Cathode | 85 | 0.1 | 2 | 1.2 | 0.5 | 300 | 4 | Tape and Reel | 6 | SM | SOT | No | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SSM3K09FU(TE85L,F)
Trans MOSFET N-CH Si 30V 0.4A 3-Pin USM T/R
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Toshiba | MOSFETs | Small Signal | Si | N | Single | Enhancement | 1 | 30 | ±20 | 150 | 0.4 | 700@10V | 20@5V | Tape and Reel | 3 | USM | No | Unknown | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SA1360-O(Q) Trans GP BJT PNP 150V 0.05A 1200mW 3-Pin(3+Tab) TO-126IS |
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Toshiba | GP BJT | PNP | Bipolar Power | Si | Single | 150 | 150 | 1 | 5 | 0.05 | 1200 | 50 to 120 | 80@10mA@5V | 1@1mA@10mA | 3 | TO-126IS | TO | No | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SD2499(TEM,F) Trans Digital BJT NPN 600V 0.006A 50000mW 3-Pin(3+Tab) |
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Toshiba | Digital-BJT | NPN | Single | 600 | 0.006 | 40 | 1.3@0.8A@4A | 50000 | 8@1A@5V|5@4A@5V | 5@0.8A@4A | 3 | No | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TK20V60W5,LVQ
Trans MOSFET N-CH Si 600V 20A 5-Pin DFN EP T/R
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Von 1,5827 € bis 1,6868 €
pro Stück
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single Triple Source | Enhancement | 1 | 600 | ±30 | 156000 | 20 | 190@10V | 55@10V | 55 | 1800@300V | Tape and Reel | 5 | DFN EP | DFN | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TD62382AF(5,EL)
Trans Darlington NPN/PNP 50V 0.05A 960mW 18-Pin SOP T/R
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Toshiba | Darlington BJT | NPN|PNP | Octal | 50 | 8 | 0.05 | 960 | 0.23@40mA | 0.13um | Tape and Reel | 18 | SOP | SO | No | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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1SS313(TE85L,F)
Diode PIN Switch 30V 50mA 3-Pin USM T/R
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Toshiba | PIN | Switch | VHF | Dual Common Anode | 30 | 50 | 0.9@2mA | 0.85@2mA | 1.2@6V | Tape and Reel | 3 | USM | No | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
CUS521,H3F
Diode Small Signal Schottky Si 0.2A 2-Pin USC T/R Automotive AEC-Q101
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Von 0,0204 € bis 0,0222 €
pro Stück
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Toshiba | Gleichrichter | Small Signal Schottky Diode | Si | Single | 0.2 | 1 | 0.5 | 30 | 150 | 26(Typ) | 2 | USC | SOD | Unknown | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TPN11003NL,LQ
Trans MOSFET N-CH Si 30V 31A 8-Pin TSON EP Advance T/R
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Von 0,2563 € bis 0,2778 €
pro Stück
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single Quad Drain Triple Source | Enhancement | 1 | 30 | ±20 | 2.3 | 1900 | 31 | 11@10V | 3.3@4.5V|7.5@10V | 7.5 | 510@15V | Tape and Reel | 8 | TSON EP Advance | SON | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
1ZM100(Q)
Diode Zener Single Bidirectional 100V 20% 1000mW 2-Pin DO-15
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Toshiba | Zener | Voltage Regulator | Single Bidirectional | 100 | 20% | 3 | 10 | 330 | 1000 | 1000 | 2 | DO-15 | DO | No | Unknown | No | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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1SS389(TPH3,F)""
Diode Small Signal Schottky Si 15V 0.1A 2-Pin ESC T/R
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Toshiba | Gleichrichter | Small Signal Schottky Diode | Si | Single | 15 | 0.1 | 1 | 0.5 | 20 | 150 | 40 | Tape and Reel | 2 | ESC | SOD | No | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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TK8A60DA(Q)
Trans MOSFET N-CH Si 600V 7.5A 3-Pin(3+Tab) TO-220SIS
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 600 | ±30 | 45000 | 7.5 | 1000@10V | 20@10V | 20 | 1050@25V | 3 | TO-220SIS | TO | No | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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2SC2873-Y(TE12L,F)
Trans GP BJT NPN 50V 2A 1000mW 4-Pin(3+Tab) PW-Mini T/R
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Toshiba | GP BJT | NPN | Bipolar Small Signal | Si | Single Dual Collector | 50 | 50 | 1 | 5 | 1.2@0.05A@1A | 2 | 1000 | 120 to 200 | 120@0.5A@2V | 30 | 0.5@0.05A@1A | Tape and Reel | 4 | PW-Mini | SOT | No | No | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SSM6J424TU,LF
Trans MOSFET P-CH Si 20V 6A 6-Pin UF T/R Automotive AEC-Q101
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Von 0,1045 € bis 0,1139 €
pro Stück
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Toshiba | MOSFETs | Power MOSFET | Si | P | Single Quad Drain | Enhancement | 1 | 20 | 6 | 1 | 1000 | 6 | 22.5@4.5V | 23.1@4.5V | 1650@10V | Tape and Reel | 6 | UF | No | Yes | AEC-Q101 | Yes | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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HN1D01F(TE85L,F)
Diode Switching 85V 0.1A 6-Pin SM T/R
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Toshiba | Gleichrichter | Switching Diode | Double Dual Common Anode | 85 | 0.1 | 2 | 1.2@0.1A | 0.5 | 300 | 4 | Tape and Reel | 6 | SM | SOT | No | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SA1313-Y(TE85L,F)
Trans GP BJT PNP 50V 0.5A 200mW 3-Pin S-Mini T/R
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Toshiba | GP BJT | PNP | Bipolar Small Signal | Si | Single | 50 | 50 | 1 | 5 | 0.5 | 200 | 30 to 50|50 to 120|120 to 200 | 120@100mA@1V|40@400mA@6V | 0.25@10mA@100mA | Tape and Reel | 3 | S-Mini | SOT | No | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TK1R4F04PB,LXGQ
Trans MOSFET N-CH Si 40V 160A 3-Pin(2+Tab) TO-220SM(W) T/R Automotive AEC-Q101
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 40 | ±20 | 3 | 205000 | 160 | 1.35@10V | 103@10V | 103 | 5500@10V | U-MOSIX-H | Tape and Reel | 3 | TO-220SM(W) | TO | Yes | AEC-Q101 | Yes | Unknown | EAR99 |