Toshiba Diodes, Transistors and Thyristors
| Teile-Nr. | Preis | Bestand | Hersteller | Kategorie | Type | Maximum Rate of Rise of Off-State Voltage - (V/us) | Category | Maximum Rate of Rise of On-State Current - (A/us) | Material | Frequency Band | Channel Type | Maximum Gate Trigger Voltage - (V) | Configuration | Channel Mode | Typical Zener Voltage - (V) | Repetitive Peak Reverse Voltage - (V) | Peak Reverse Repetitive Voltage - (V) | Maximum Reverse Voltage - (V) | Maximum Gate Trigger Current - (mA) | Maximum Gate Emitter Voltage - (V) | Maximum Collector-Emitter Voltage - (V) | Zener Voltage Tolerance | Surge Current Rating - (A) | Maximum Reverse Current - (uA) | Maximum Continuous Forward Current - (A) | Maximum Collector-Base Voltage - (V) | Number of Elements per Chip | Minimum Tuning Ratio | Maximum Holding Current - (mA) | Maximum Drain-Gate Voltage - (V) | Maximum Continuous DC Collector Current - (A) | Maximum Base-Emitter Voltage - (V) | Typical Input Resistance - (kOhm) | Tuning Ratio Test Condition | Test Current - (mA) | Peak Non-Repetitive Forward Surge Current - (A) | Maximum Series Resistance @ Maximum IF - (Ohm) | Maximum Forward Voltage - (V) | Maximum Drain-Source Voltage - (V) | Maximum Base-Emitter Saturation Voltage - (V) | Typical Resistor Ratio | Peak Reverse Current - (uA) | Maximum Reverse Leakage Current - (uA) | Maximum Gate-Source Voltage - (V) | Maximum DC Collector Current - (A) | Peak On-State Voltage - (V) | Operational Bias Conditions | Minimum Diode Capacitance - (pF) | Maximum Junction Ambient Thermal Resistance | Maximum Gate Threshold Voltage - (V) | Maximum Gate Peak Inverse Voltage - (V) | Maximum Zener Impedance - (Ohm) | Maximum Power Dissipation - (mW) | Maximum Power Dissipation @ 25C - (mW) | Maximum Diode Capacitance - (pF) | Maximum Continuous Drain Current - (A) | RMS On-State Current - (A) | Repetitive Peak Forward Blocking Voltage - (V) | Rated Average On-State Current - (A) | Peak Reverse Recovery Time - (ns) | Minimum DC Current Gain Range | Minimum DC Current Gain | Maximum Drain-Source Resistance - (mOhm) | Typical Gate Charge @ Vgs - (nC) | Repetitive Peak Off-State Current - (mA) | Maximum Junction Case Thermal Resistance | Typical Gate Charge @ 10V - (nC) | Typical Output Capacitance - (pF) | Typical Input Capacitance @ Vds - (pF) | Typical Power Gain - (dB) | Maximum Output Power - (W) | Maximum Collector-Emitter Saturation Voltage - (V) | Maximum Frequency - (MHz) | Typical 3rd Order Intercept Point - (dBm) | Maximum Transition Frequency - (MHz) | Maximum Noise Figure - (dB) | Typical Drain-Source Resistance @ 25°C - (mOhm) | Process Technology | Packaging | Pin Count | Supplier Package | Standard Package Name | CECC Qualified | ESD Protection | Military | AEC Qualified | AEC Qualified Number | Auto motive | P PAP | ECCN Code | SVHC | SVHC Exceeds Threshold |
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CMS04(TE12L)Q
Diode Schottky 30V 5A 2-Pin M-FLAT T/R
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Toshiba | Gleichrichter | Schottky Diode | Single | 30 | 5 | 70 | 0.37 | 8000 | Tape and Reel | 2 | M-FLAT | No | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| U5ZA40C(TE24L,Q) Zener Diode Single 40V 10% 30Ohm 5000mW 2-Pin MR T/R |
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Toshiba | Zener | Voltage Regulator | Single | 40 | 10% | 10 | 10 | 30 | 5000 | 5000 | Tape and Reel | 2 | MR | No | Unknown | No | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TK155A65Z,S4X
Trans MOSFET N-CH 650V 18A 3-Pin(3+Tab) TO-220SIS Tube
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Von 1,612 € bis 1,7186 €
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Toshiba | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 650 | ±30 | 40000 | 18 | 155@10V | 29@10V | 29 | 1635@300V | Tube | 3 | TO-220SIS | TO | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
ULN2803AFWG,C,EL
Trans Darlington NPN 50V 0.5A 1310mW 18-Pin SOP
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Toshiba | Darlington BJT | NPN | Octal Common Emitter | 50 | 8 | 0.5 | 30 | 1310 | 1000@350mA@2V | 1.3@350uA@200mA|1.6@500uA@350mA | 18 | SOP | SO | No | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TRS6E65C,S1Q
Diode Schottky SiC 650V 6A 2-Pin(2+Tab) TO-220-L Tube
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Toshiba | Gleichrichter | Schottky Diode | SiC | Single | 650 | 6 | 30 | 1.7 | 90 | Tube | 2 | TO-220-L | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
1SS362FV,L3F
Diode Switching 85V 0.1A 3-Pin VESM T/R Automotive AEC-Q101
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Von 0,0204 € bis 0,0222 €
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Toshiba | Gleichrichter | Switching Diode | Dual Series | 85 | 0.1 | 1 | 1.2 | 0.5 | 150 | 4 | Tape and Reel | 3 | VESM | SOT | No | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SC4116-GR,LF
Trans GP BJT NPN 50V 0.15A 200mW 3-Pin USM T/R Automotive AEC-Q101
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Von 0,0163 € bis 0,0177 €
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Toshiba | GP BJT | NPN | Bipolar Small Signal | Si | Single | 50 | 60 | 1 | 5 | 0.15 | 200 | 50 to 120 | 70@2mA@6V | 0.25@10mA@100mA | 10 | Tape and Reel | 3 | USM | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CUS10I30A(TE85L,Q) Diode Schottky 30V 1A 2-Pin US-FLAT T/R |
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Toshiba | Gleichrichter | Schottky Diode | Single | 30 | 1 | 20 | 0.39@0.7A | 60 | Tape and Reel | 2 | US-FLAT | No | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SK368-Y(TE85L,F)
Trans JFET N-CH 6.5mA Si 3-Pin S-Mini T/R
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Toshiba | JFETs | Si | N | Single | -100 | 150 | 6.5 | Tape and Reel | 3 | S-Mini | SOT | No | No | No | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TK25V60X,LQ(S
Trans MOSFET N-CH Si 600V 25A 5-Pin DFN EP T/R
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single Triple Source | Enhancement | 1 | 600 | ±30 | 3.5 | 180000 | 25 | 135@10V | 40@10V | 40 | 2400@300V | Tape and Reel | 5 | DFN EP | DFN | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SC1815-GR(TPE2,F)
Trans GP BJT NPN 50V 0.15A 400mW 3-Pin TO-92 T/R
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Toshiba | GP BJT | NPN | Bipolar Small Signal | Si | Single | 50 | 60 | 1 | 5 | 1@10mA@100mA | 0.15 | 400 | 200 to 300 | 200@2mA@6V | 2 | 0.25@10mA@100mA | 10 | Tape and Reel | 3 | TO-92 | TO | No | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
RN2110(TE85L,F)
Trans Digital BJT PNP 50V 0.1A 100mW 3-Pin SSM T/R
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Toshiba | Digital-BJT | PNP | Single | 50 | 0.1 | 4.7 | 100 | 120@1mA@5V | 0.3@0.25mA@5mA | Tape and Reel | 3 | SSM | No | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SSM3K15FU(TE85L,F)
Trans MOSFET N-CH Si 30V 0.1A 3-Pin USM T/R
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Toshiba | MOSFETs | Small Signal | Si | N | Single | Enhancement | 1 | 30 | ±20 | 150 | 0.1 | 4000@4V | 7.8@3V | Tape and Reel | 3 | USM | No | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
20GL2C41A(F)
Diode Switching 400V 20A 3-Pin(3+Tab) TO-3PN
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Toshiba | Gleichrichter | Switching Diode | Dual Common Cathode | 400 | 20 | 110 | 1.8@10A | 50 | 35 | 3 | TO-3PN | TO | No | No | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TK3R2E06PL,S1X
Trans MOSFET N-CH Si 60V 100A 3-Pin(3+Tab) TO-220 Tube
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Von 0,8084 € bis 0,8635 €
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 60 | ±20 | 168000 | 100 | 3.2@10V | 35@4.5V|71@10V | 5000@30V | Tube | 3 | TO-220 | TO | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SK3399(Q) Trans MOSFET N-CH Si 600V 10A 3-Pin(3+Tab) |
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 600 | ±30 | 100000 | 10 | 750@10V | 35@10V | 35 | 1750@25V | 3 | No | No | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
CRZ13(TE85L,Q,M)
Zener Diode Single 13V 10% 30Ohm 700mW 2-Pin S-FLAT T/R
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Von 0,1306 € bis 0,1415 €
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Toshiba | Zener | Voltage Regulator | Single | 13 | 10% | 10 | 10 | 30 | 700 | 700 | Tape and Reel | 2 | S-FLAT | No | Unknown | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2FWJ42N(TPA2,Q)
Diode Schottky 30V 2A 2-Pin DO-15L T/R
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Toshiba | Gleichrichter | Schottky Diode | Single | 30 | 2 | 60 | 0.37 | 3000 | Tape and Reel | 2 | DO-15L | DO | No | No | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TPN1R603PL,L1Q
Trans MOSFET N-CH Si 30V 188A 8-Pin TSON Advance T/R
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0,2642 €
pro Stück
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single Quad Drain Triple Source | Enhancement | 1 | 30 | ±20 | 2670 | 188 | 1.6@10V | 20@4.5V|41@10V | 41 | 2970@15V | Tape and Reel | 8 | TSON Advance | SON | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SJ304(F)
Trans MOSFET P-CH Si 60V 14A 3-Pin(3+Tab) TO-220NIS
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Toshiba | MOSFETs | Power MOSFET | Si | P | Single | Enhancement | 1 | 60 | ±20 | 40000 | 14 | 120@10V | 45@10V | 45 | 1200@10V | 3 | TO-220NIS | TO | No | No | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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2SK2037(TE85L,F)
Trans MOSFET N-CH Si 20V 0.1A 3-Pin USM T/R
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Toshiba | MOSFETs | Small Signal | Si | N | Single | Enhancement | 1 | 20 | 10 | 100 | 0.1 | 6000@2.5V | 14@3V | Tape and Reel | 3 | USM | No | No | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SK2231
Trans MOSFET N-CH Si 60V 5A 3-Pin(2+Tab) New PW-Mold
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 60 | ±20 | 20000 | 5 | 160@10V | 12@10V | 12 | 370@10V | 3 | New PW-Mold | TO | No | No | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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2SK2173(F)
Trans MOSFET N-CH Si 60V 50A 3-Pin(3+Tab) TO-3PN
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 60 | ±20 | 125000 | 50 | 17@10V | 110@10V | 110 | 3550@10V | 3 | TO-3PN | TO | No | No | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TPH1500CNH,L1Q
Trans MOSFET N-CH Si 150V 50A 8-Pin SOP Advance T/R
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Von 0,7316 € bis 0,7815 €
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single Quad Drain Triple Source | Enhancement | 1 | 150 | ±20 | 4 | 2800 | 50 | 15.4@10V | 22@10V | 22 | 1700@75V | Tape and Reel | 8 | SOP Advance | SO | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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1SS392(TE85L,F)
Diode Small Signal Schottky Si 45V 0.1A 3-Pin S-Mini T/R
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Toshiba | Gleichrichter | Small Signal Schottky Diode | Si | Dual Common Cathode | 45 | 0.1 | 1 | 0.6 | 5@40V | 150 | 25 | Tape and Reel | 3 | S-Mini | SOT | No | No | No | No | No | EAR99 | No |