Toshiba Diodes, Transistors and Thyristors
| Teile-Nr. | Preis | Bestand | Hersteller | Kategorie | Type | Maximum Rate of Rise of Off-State Voltage - (V/us) | Category | Maximum Rate of Rise of On-State Current - (A/us) | Material | Frequency Band | Channel Type | Maximum Gate Trigger Voltage - (V) | Configuration | Channel Mode | Typical Zener Voltage - (V) | Repetitive Peak Reverse Voltage - (V) | Peak Reverse Repetitive Voltage - (V) | Maximum Reverse Voltage - (V) | Maximum Gate Trigger Current - (mA) | Maximum Gate Emitter Voltage - (V) | Maximum Collector-Emitter Voltage - (V) | Zener Voltage Tolerance | Surge Current Rating - (A) | Maximum Reverse Current - (uA) | Maximum Continuous Forward Current - (A) | Maximum Collector-Base Voltage - (V) | Number of Elements per Chip | Minimum Tuning Ratio | Maximum Holding Current - (mA) | Maximum Drain-Gate Voltage - (V) | Maximum Continuous DC Collector Current - (A) | Maximum Base-Emitter Voltage - (V) | Typical Input Resistance - (kOhm) | Tuning Ratio Test Condition | Test Current - (mA) | Peak Non-Repetitive Forward Surge Current - (A) | Maximum Series Resistance @ Maximum IF - (Ohm) | Maximum Forward Voltage - (V) | Maximum Drain-Source Voltage - (V) | Maximum Base-Emitter Saturation Voltage - (V) | Typical Resistor Ratio | Peak Reverse Current - (uA) | Maximum Reverse Leakage Current - (uA) | Maximum Gate-Source Voltage - (V) | Maximum DC Collector Current - (A) | Peak On-State Voltage - (V) | Operational Bias Conditions | Minimum Diode Capacitance - (pF) | Maximum Junction Ambient Thermal Resistance | Maximum Gate Threshold Voltage - (V) | Maximum Gate Peak Inverse Voltage - (V) | Maximum Zener Impedance - (Ohm) | Maximum Power Dissipation - (mW) | Maximum Power Dissipation @ 25C - (mW) | Maximum Diode Capacitance - (pF) | Maximum Continuous Drain Current - (A) | RMS On-State Current - (A) | Repetitive Peak Forward Blocking Voltage - (V) | Rated Average On-State Current - (A) | Peak Reverse Recovery Time - (ns) | Minimum DC Current Gain Range | Minimum DC Current Gain | Maximum Drain-Source Resistance - (mOhm) | Typical Gate Charge @ Vgs - (nC) | Repetitive Peak Off-State Current - (mA) | Maximum Junction Case Thermal Resistance | Typical Gate Charge @ 10V - (nC) | Typical Output Capacitance - (pF) | Typical Input Capacitance @ Vds - (pF) | Typical Power Gain - (dB) | Maximum Output Power - (W) | Maximum Collector-Emitter Saturation Voltage - (V) | Maximum Frequency - (MHz) | Typical 3rd Order Intercept Point - (dBm) | Maximum Transition Frequency - (MHz) | Maximum Noise Figure - (dB) | Typical Drain-Source Resistance @ 25°C - (mOhm) | Process Technology | Packaging | Pin Count | Supplier Package | Standard Package Name | CECC Qualified | ESD Protection | Military | AEC Qualified | AEC Qualified Number | Auto motive | P PAP | ECCN Code | SVHC | SVHC Exceeds Threshold |
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| 1GWJ43(N,Q) Diode Schottky 40V 1A 2-Pin DO-41SS |
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Toshiba | Gleichrichter | Schottky Diode | Single | 40 | 1 | 25 | 0.55 | 500 | 35 | 2 | DO-41SS | DO | No | No | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SSM3J35CT,L3F
Trans MOSFET P-CH Si 20V 0.1A 3-Pin CST T/R
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Von 0,0339 € bis 0,037 €
pro Stück
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Toshiba | MOSFETs | Small Signal | Si | P | Single | Enhancement | 1 | 20 | ±10 | 1 | 100 | 0.1 | 8000@4V | 12.2@3V | Tape and Reel | 3 | CST | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SA1162-Y,LF(T
Trans GP BJT PNP 50V 0.15A 200mW Automotive AEC-Q101 3-Pin S-Mini T/R
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Toshiba | GP BJT | PNP | Bipolar Small Signal | Si | Single | 50 | 50 | 1 | 5 | 0.15 | 200 | 120 to 200 | 120@2mA@6V | 4 | 0.3@10mA@100mA | 10 | Tape and Reel | 3 | S-Mini | SOT | No | Unknown | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SA2154MFV-Y(TPL3)
Trans GP BJT PNP 50V 0.15A 150mW 3-Pin VESM T/R
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Toshiba | GP BJT | PNP | Bipolar Small Signal | Si | Single | 50 | 50 | 1 | 5 | 0.15 | 150 | 120 to 200 | 120@2mA@6V | 0.3@10mA@100mA | Tape and Reel | 3 | VESM | SOT | No | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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2SK208-Y(TE85R,F)
Trans JFET N-CH Si 3-Pin S-Mini T/R
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Toshiba | JFETs | Si | N | Single | 1 | -50 | 100 | 0.5(Typ) | Tape and Reel | 3 | S-Mini | SOT | No | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SK2145-GR(TE85L,F
Trans JFET N-CH 6.5mA Si 5-Pin SMV T/R
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Toshiba | JFETs | Si | N | Dual Common Source | -50 | 300 | 6.5 | 5(Typ) | Tape and Reel | 5 | SMV | SOT | No | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
CMS03(T2L,TEMQ)
Diode Schottky 30V 3A 2-Pin M-FLAT T/R
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Toshiba | Gleichrichter | Schottky Diode | Single | 30 | 3@Ta=28.4C | 40 | 0.45 | 500 | Tape and Reel | 2 | M-FLAT | No | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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1SS181(TE85L,F)
Diode Switching Si 85V 0.1A 3-Pin S-Mini T/R Automotive AEC-Q101
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Toshiba | Gleichrichter | Switching Diode | Si | Dual Common Anode | 85 | 0.1 | 2 | 1.2 | 0.5 | 150 | 4 | 4 | Tape and Reel | 3 | S-Mini | SOT | No | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
1SS387,L3F
Diode Switching Si 85V 0.1A 2-Pin ESC T/R Automotive AEC-Q101
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Von 0,0231 € bis 0,0251 €
pro Stück
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Toshiba | Gleichrichter | Switching Diode | Si | Single | 85 | 0.1 | 1 | 1.2 | 0.5 | 200 | 3 | 4 | Tape and Reel | 2 | ESC | SOD | No | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SK3565(STA4,Q,M)
Trans MOSFET N-CH Si 900V 5A 3-Pin(3+Tab) TO-220SIS
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 900 | ±30 | 45000 | 5 | 2500@10V | 28@10V | 28 | 1150@25V | 3 | TO-220SIS | TO | No | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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CES388,L3F
Diode Small Signal Schottky 45V 0.1A 2-Pin ESC T/R Automotive AEC-Q101
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Von 0,0204 € bis 0,0222 €
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Toshiba | Gleichrichter | Small Signal Schottky Diode | Single | 45 | 0.1 | 1 | 0.6 | 5 | 150 | Tape and Reel | 2 | ESC | SOD | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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1SS387(TPH3,F)
Diode Switching 85V 0.1A 2-Pin ESC T/R
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Toshiba | Gleichrichter | Switching Diode | Single | 85 | 0.1 | 1 | 1.2 | 0.5 | 200 | 3 | 4 | Tape and Reel | 2 | ESC | SOD | No | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TK33S10N1L,LXHQ(O MOSFETs Silicon N-channel MOS |
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Toshiba | MOSFETs | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TJ200F04M3L,LXHQ(O
Trans MOSFET P-CH Si 40V 200A 3-Pin(1+2Tab) TO-220SM(W) T/R Automotive AEC-Q101
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Toshiba | MOSFETs | Power MOSFET | Si | P | Single | Enhancement | 1 | 40 | 10 | 3 | 375000 | 200 | 1.8@10V | 460@10V | 460 | 12800@10V | 3 | TO-220SM(W) | TO | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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RN2401,LF(T
Trans Digital BJT PNP 50V 0.1A 200mW 3-Pin S-Mini T/R
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Toshiba | Digital-BJT | PNP | Single | 50 | 0.1 | 4.7 | 1 | 200 | 30 to 50 | 30@10mA@5V | 0.3@0.25mA@5mA | Tape and Reel | 3 | S-Mini | SOT | No | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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1SS184,LF(B
Diode Switching Si 85V 0.1A 3-Pin S-Mini Automotive AEC-Q101
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Toshiba | Gleichrichter | Switching Diode | Si | Dual Common Cathode | 85 | 0.1 | 2 | 1.2 | 0.5 | 150 | 3 | 4 | 3 | S-Mini | SOT | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SSM6N15AFU,LF
Trans MOSFET N-CH Si 30V 0.1A 6-Pin US T/R
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Von 0,0421 € bis 0,0458 €
pro Stück
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Toshiba | MOSFETs | Small Signal | Si | N | Dual | Enhancement | 2 | 30 | ±20 | 300 | 0.1 | 3600@4V | 13.5@3V | Tape and Reel | 6 | US | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TK25V60X,LQ
Trans MOSFET N-CH Si 600V 25A 5-Pin DFN EP T/R
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Von 2,5745 € bis 2,7629 €
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single Triple Source | Enhancement | 1 | 600 | ±30 | 3.5 | 180000 | 25 | 135@10V | 40@10V | 40 | 2400@300V | Tape and Reel | 5 | DFN EP | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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TK8R2A06PL,S4X
Trans MOSFET N-CH Si 60V 50A 3-Pin(3+Tab) TO-220SIS Tube
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Von 0,4211 € bis 0,4562 €
pro Stück
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 60 | ±20 | 2.5 | 36000 | 50 | 8.2@10V | 14.3@4.5V|28.3@10V | 28.3 | 1990@30V | Tube | 3 | TO-220SIS | TO | No | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TPH7R204PL,LQ
Trans MOSFET N-CH Si 40V 72A 8-Pin SOP Advance T/R
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Von 0,2106 € bis 0,2142 €
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single Quad Drain Triple Source | Enhancement | 1 | 40 | ±20 | 1800 | 72 | 7.2@10V | 12@4.5V|24@10V | 24 | 1570@20V | Tape and Reel | 8 | SOP Advance | SO | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TRS10E65C,S1Q
Rectifier Diode Schottky SiC 650V 10A 2-Pin(2+Tab) TO-220-L Tube
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Toshiba | Gleichrichter | Schottky Diode | SiC | Single | 650 | 10 | 50 | 1.7 | 90 | Tube | 2 | TO-220-L | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SSM3K329R,LF(B
Trans MOSFET N-CH Si 30V 3.5A 3-Pin SOT-23F T/R
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 30 | ±12 | 1 | 2000 | 3.5 | 126@4V | 1.5@4V | 123@15V | Tape and Reel | 3 | SOT-23F | SOT | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MT3S111P(TE12L,F)
Trans RF BJT NPN 6V 0.1A 300mW 4-Pin(3+Tab) PW-Mini T/R
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Toshiba | HF-BJT | NPN | SiGe | Single Dual Collector | 6 | 1 | 0.6 | 0.1 | 5V/30mA | 300 | 200 to 300 | 200@30mA@5V | 1.6 | 32 | 8000(Typ) | 1.25 | Tape and Reel | 4 | PW-Mini | SOT | No | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SSM3J378R,LXHF
Trans MOSFET P-CH Si 20V 6A 3-Pin SOT-23F Automotive AEC-Q101
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Toshiba | MOSFETs | Power MOSFET | Si | P | Single | Enhancement | 1 | 20 | 6 | 2000 | 6 | 29.8@4.5V | 12.8@4.5V | 840@10V | 3 | SOT-23F | SOT | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SSM6K513NU,LF
Trans MOSFET N-CH Si 30V 15A 6-Pin UDFN-B EP T/R
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Von 0,1012 € bis 0,1046 €
pro Stück
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single Quad Drain Triple Source | Enhancement | 1 | 30 | ±20 | 2500 | 15 | 8.9@10V | 7.5@4.5V | 1130@15V | Tape and Reel | 6 | UDFN-B EP | DFN | No | No | No | No | EAR99 | No |