Toshiba Diodes, Transistors and Thyristors
| Teile-Nr. | Preis | Bestand | Hersteller | Kategorie | Type | Maximum Rate of Rise of Off-State Voltage - (V/us) | Category | Maximum Rate of Rise of On-State Current - (A/us) | Material | Frequency Band | Channel Type | Maximum Gate Trigger Voltage - (V) | Configuration | Channel Mode | Typical Zener Voltage - (V) | Repetitive Peak Reverse Voltage - (V) | Peak Reverse Repetitive Voltage - (V) | Maximum Reverse Voltage - (V) | Maximum Gate Trigger Current - (mA) | Maximum Gate Emitter Voltage - (V) | Maximum Collector-Emitter Voltage - (V) | Zener Voltage Tolerance | Surge Current Rating - (A) | Maximum Reverse Current - (uA) | Maximum Continuous Forward Current - (A) | Maximum Collector-Base Voltage - (V) | Number of Elements per Chip | Minimum Tuning Ratio | Maximum Holding Current - (mA) | Maximum Drain-Gate Voltage - (V) | Maximum Continuous DC Collector Current - (A) | Maximum Base-Emitter Voltage - (V) | Typical Input Resistance - (kOhm) | Tuning Ratio Test Condition | Test Current - (mA) | Peak Non-Repetitive Forward Surge Current - (A) | Maximum Series Resistance @ Maximum IF - (Ohm) | Maximum Forward Voltage - (V) | Maximum Drain-Source Voltage - (V) | Maximum Base-Emitter Saturation Voltage - (V) | Typical Resistor Ratio | Peak Reverse Current - (uA) | Maximum Reverse Leakage Current - (uA) | Maximum Gate-Source Voltage - (V) | Maximum DC Collector Current - (A) | Peak On-State Voltage - (V) | Operational Bias Conditions | Minimum Diode Capacitance - (pF) | Maximum Junction Ambient Thermal Resistance | Maximum Gate Threshold Voltage - (V) | Maximum Gate Peak Inverse Voltage - (V) | Maximum Zener Impedance - (Ohm) | Maximum Power Dissipation - (mW) | Maximum Power Dissipation @ 25C - (mW) | Maximum Diode Capacitance - (pF) | Maximum Continuous Drain Current - (A) | RMS On-State Current - (A) | Repetitive Peak Forward Blocking Voltage - (V) | Rated Average On-State Current - (A) | Peak Reverse Recovery Time - (ns) | Minimum DC Current Gain Range | Minimum DC Current Gain | Maximum Drain-Source Resistance - (mOhm) | Typical Gate Charge @ Vgs - (nC) | Repetitive Peak Off-State Current - (mA) | Maximum Junction Case Thermal Resistance | Typical Gate Charge @ 10V - (nC) | Typical Output Capacitance - (pF) | Typical Input Capacitance @ Vds - (pF) | Typical Power Gain - (dB) | Maximum Output Power - (W) | Maximum Collector-Emitter Saturation Voltage - (V) | Maximum Frequency - (MHz) | Typical 3rd Order Intercept Point - (dBm) | Maximum Transition Frequency - (MHz) | Maximum Noise Figure - (dB) | Typical Drain-Source Resistance @ 25°C - (mOhm) | Process Technology | Packaging | Pin Count | Supplier Package | Standard Package Name | CECC Qualified | ESD Protection | Military | AEC Qualified | AEC Qualified Number | Auto motive | P PAP | ECCN Code | SVHC | SVHC Exceeds Threshold |
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TK560P65Y,RQ
Trans MOSFET N-CH Si 650V 7A 3-Pin(2+Tab) DPAK T/R
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Von 0,5486 € bis 0,5946 €
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 650 | ±30 | 4 | 60000 | 7 | 560@10V | 14.5@10V | 14.5 | 380@300V | Tape and Reel | 3 | DPAK | TO | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SSM3J56ACT,L3F
Trans MOSFET P-CH 20V 1.4A 3-Pin CST T/R
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Von 0,0474 € bis 0,0506 €
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Toshiba | MOSFETs | Small Signal | P | Single | Enhancement | 1 | 20 | ±8 | 1 | 500 | 1.4 | 390@4.5V | 1.6@4.5V | 100 | Tape and Reel | 3 | CST | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TK31Z60X,S1F
Trans MOSFET N-CH Si 600V 30.8A 4-Pin(4+Tab) TO-247 Tube
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Von 5,6924 € bis 6,133 €
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single Dual Source | Enhancement | 1 | 600 | ±30 | 3.5 | 230000 | 30.8 | 88@10V | 65@10V | 65 | 3000@300V | 73@10V | Tube | 4 | TO-247 | TO | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SK3342(TE16L1,Q)
Trans MOSFET N-CH Si 250V 4.5A 3-Pin(2+Tab) New PW-Mold T/R
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 250 | ±20 | 3.5 | 20000 | 4.5 | 1000@10V | 10@10V | 10 | 440@10V | Tape and Reel | 3 | New PW-Mold | TO | No | No | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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2SK2865(Q)
Trans MOSFET N-CH Si 600V 2A 3-Pin(2+Tab) New PW-Mold
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 600 | ±30 | 20000 | 2 | 5000@10V | 9@10V | 9 | 380@10V | 3 | New PW-Mold | TO | No | No | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
1SS294(TE85L,F)
Diode Small Signal Schottky Si 45V 0.1A 3-Pin S-Mini T/R Automotive AEC-Q101
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Toshiba | Gleichrichter | Small Signal Schottky Diode | Si | Single | 45 | 0.1 | 0.6 | 5@40V | 150 | 25 | Tape and Reel | 3 | S-Mini | SOT | No | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
RN4988(T5L,F,T)
Trans Digital BJT NPN/PNP 50V 0.1A 200mW 6-Pin US T/R
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Toshiba | Digital-BJT | NPN|PNP | Dual | 50 | 0.1 | 22 | 0.468 | 200 | 80@10mA@5V | 0.3@0.25mA@5mA | Tape and Reel | 6 | US | No | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TB62004FG
8-Channel DMOS Transistor Array with Gate 20-Pin SOP
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Toshiba | Diskrete, Verschiedenes | 8-Channel DMOS Transistor Array with Gate | 0.13um | 20 | SOP | SO | No | No | No | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
CMZB180(TE12L,Q)
Zener Diode Single 180V 10% 500Ohm 1000mW 2-Pin M-FLAT T/R
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Toshiba | Zener | Voltage Regulator | Single | 180 | 10% | 1.5 | 10 | 500 | 1000 | Tape and Reel | 2 | M-FLAT | Unknown | No | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TK65S04N1L,LXHQ(O Trans MOSFET N-CH Si 40V 65A 3-Pin(2+Tab) DPAK+ T/R |
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 40 | ±20 | 107000 | 65 | 4.3@10V | 39@10V | 2550@10V | 3 | DPAK+ | TO | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TK11A60D(STA4,Q,M)
Trans MOSFET N-CH Si 600V 11A 3-Pin(3+Tab) TO-220SIS
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 600 | ±30 | 45000 | 11 | 650@10V | 28@10V | 28 | 1550@25V | 3 | TO-220SIS | TO | No | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SSM3K310T(TE85L,F)
Trans MOSFET N-CH Si 20V 5A 3-Pin TSM T/R
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Toshiba | MOSFETs | Small Signal | Si | N | Single | Enhancement | 1 | 20 | ±10 | 1 | 700 | 5 | 28@4V | 14.8@4V | 1120@10V | Tape and Reel | 3 | TSM | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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CMZ15(TE12L,Q,M)
Zener Diode Single 15V 10% 30Ohm 2000mW 2-Pin M-FLAT T/R
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Toshiba | Zener | Voltage Regulator | Single | 15 | 10% | 10 | 10 | 30 | 2000 | Tape and Reel | 2 | M-FLAT | No | Unknown | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SC5108-Y,LF(T
Trans RF BJT NPN 10V 0.03A 100mW 3-Pin SSM T/R
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Toshiba | HF-BJT | NPN | Si | Single | 10 | 20 | 1 | 3 | 0.03 | 5V/5mA | 100 | 120 to 200 | 120@5mA@5V | 0.7 | 11 | 6000(Typ) | Tape and Reel | 3 | SSM | No | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CRF03A,LQ(M Diode Switching Si 600V 0.7A 2-Pin S-FLAT |
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Toshiba | Gleichrichter | Switching Diode | Si | Single | 600 | 0.7 | 10 | 2 | 50 | 100 | 2 | S-FLAT | No | No | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SK2776(Q) Trans MOSFET N-CH Si 500V 8A 3-Pin(3+Tab) |
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 500 | ±30 | 65000 | 8 | 850@10V | 30@10V | 30 | 1300@10V | 3 | No | No | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SSM3K376R,LF
Trans MOSFET N-CH Si 30V 4A 3-Pin SOT-23F T/R Automotive AEC-Q101
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Von 0,0392 € bis 0,0491 €
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 30 | 12 | 2000 | 4 | 56@4.5V | 2.2@4.5V | 200@10V | Tape and Reel | 3 | SOT-23F | SOT | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SSM6L36FE,LM
Trans MOSFET N/P-CH Si 20V 0.5A/0.33A 6-Pin ES T/R Automotive AEC-Q101
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Von 0,0542 € bis 0,0591 €
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Toshiba | MOSFETs | Small Signal | Si | N|P | Dual | Enhancement | 2 | 20 | ±10@N Channel|±8@P Channel | 1 | 150 | 0.5@N Channel|0.33@P Channel | 630@5V@N Channel|1310@4.5V@P Channel | 1.23@4V@N Channel|1.2@4V@P Channel | 46@10V@N Channel|43@10V@P Channel | Tape and Reel | 6 | ES | No | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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TK1K0A60F,S4X
Trans MOSFET N-CH Si 600V 7.5A 3-Pin(3+Tab) TO-220SIS Tube
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Von 0,4559 € bis 0,494 €
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 600 | ±30 | 40000 | 7.5 | 1000@10V | 24@10V | 890@300V | Tube | 3 | TO-220SIS | TO | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SK3845(Q)
Trans MOSFET N-CH Si 60V 70A 3-Pin(3+Tab) TO-3PN
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 60 | ±20 | 125000 | 70 | 5.8@10V | 196@10V | 196 | 12400@10V | 3 | TO-3PN | TO | No | Unknown | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SC1815-Y(TPE2,F)
Trans GP BJT NPN 50V 0.15A 400mW 3-Pin TO-92 T/R
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Toshiba | GP BJT | NPN | Bipolar Small Signal | Si | Single | 50 | 60 | 1 | 5 | 1@10mA@100mA | 0.15 | 400 | 120 to 200 | 120@2mA@6V | 2 | 0.25@10mA@100mA | 10 | Tape and Reel | 3 | TO-92 | TO | No | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TPH5200FNH,L1Q
Trans MOSFET N-CH Si 250V 27A 8-Pin SOP Advance T/R
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Von 1,0808 € bis 1,1545 €
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single Quad Drain Triple Source | Enhancement | 1 | 250 | ±20 | 4 | 78000 | 27 | 52@10V | 22@10V | 22 | 1700@100V | Tape and Reel | 8 | SOP Advance | SO | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1ZB7.5(Q) Zener Diode Single 75V 10% 150Ohm 1000mW 2-Pin DO-41SS |
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Toshiba | Zener | Voltage Regulator | Single | 75 | 10% | 4 | 10 | 150 | 1000 | 1000 | 2 | DO-41SS | DO | No | Unknown | No | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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CMZB390(TE12L,Q)
Zener Diode Single 390V 10% 10000Ohm 1000mW 2-Pin M-FLAT T/R
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Toshiba | Zener | Voltage Regulator | Single | 390 | 10% | 0.5 | 10 | 10000 | 1000 | Tape and Reel | 2 | M-FLAT | Unknown | No | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TK160F10N1L,LQ(O
Trans MOSFET N-CH Si 100V 160A 3-Pin(2+Tab) TO-220SM(W) T/R Automotive AEC-Q101
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 100 | ±20 | 3.5 | 375000 | 160 | 2.4@10V | 122@10V | 122 | 10100@10V | 2@10V|2.4@6V | Tape and Reel | 3 | TO-220SM(W) | TO | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 |