Toshiba Diodes, Transistors and Thyristors
| Teile-Nr. | Preis | Bestand | Hersteller | Kategorie | Type | Maximum Rate of Rise of Off-State Voltage - (V/us) | Category | Maximum Rate of Rise of On-State Current - (A/us) | Material | Frequency Band | Channel Type | Maximum Gate Trigger Voltage - (V) | Configuration | Channel Mode | Typical Zener Voltage - (V) | Repetitive Peak Reverse Voltage - (V) | Peak Reverse Repetitive Voltage - (V) | Maximum Reverse Voltage - (V) | Maximum Gate Trigger Current - (mA) | Maximum Gate Emitter Voltage - (V) | Maximum Collector-Emitter Voltage - (V) | Zener Voltage Tolerance | Surge Current Rating - (A) | Maximum Reverse Current - (uA) | Maximum Continuous Forward Current - (A) | Maximum Collector-Base Voltage - (V) | Number of Elements per Chip | Minimum Tuning Ratio | Maximum Holding Current - (mA) | Maximum Drain-Gate Voltage - (V) | Maximum Continuous DC Collector Current - (A) | Maximum Base-Emitter Voltage - (V) | Typical Input Resistance - (kOhm) | Tuning Ratio Test Condition | Test Current - (mA) | Peak Non-Repetitive Forward Surge Current - (A) | Maximum Series Resistance @ Maximum IF - (Ohm) | Maximum Forward Voltage - (V) | Maximum Drain-Source Voltage - (V) | Maximum Base-Emitter Saturation Voltage - (V) | Typical Resistor Ratio | Peak Reverse Current - (uA) | Maximum Reverse Leakage Current - (uA) | Maximum Gate-Source Voltage - (V) | Maximum DC Collector Current - (A) | Peak On-State Voltage - (V) | Operational Bias Conditions | Minimum Diode Capacitance - (pF) | Maximum Junction Ambient Thermal Resistance | Maximum Gate Threshold Voltage - (V) | Maximum Gate Peak Inverse Voltage - (V) | Maximum Zener Impedance - (Ohm) | Maximum Power Dissipation - (mW) | Maximum Power Dissipation @ 25C - (mW) | Maximum Diode Capacitance - (pF) | Maximum Continuous Drain Current - (A) | RMS On-State Current - (A) | Repetitive Peak Forward Blocking Voltage - (V) | Rated Average On-State Current - (A) | Peak Reverse Recovery Time - (ns) | Minimum DC Current Gain Range | Minimum DC Current Gain | Maximum Drain-Source Resistance - (mOhm) | Typical Gate Charge @ Vgs - (nC) | Repetitive Peak Off-State Current - (mA) | Maximum Junction Case Thermal Resistance | Typical Gate Charge @ 10V - (nC) | Typical Output Capacitance - (pF) | Typical Input Capacitance @ Vds - (pF) | Typical Power Gain - (dB) | Maximum Output Power - (W) | Maximum Collector-Emitter Saturation Voltage - (V) | Maximum Frequency - (MHz) | Typical 3rd Order Intercept Point - (dBm) | Maximum Transition Frequency - (MHz) | Maximum Noise Figure - (dB) | Typical Drain-Source Resistance @ 25°C - (mOhm) | Process Technology | Packaging | Pin Count | Supplier Package | Standard Package Name | CECC Qualified | ESD Protection | Military | AEC Qualified | AEC Qualified Number | Auto motive | P PAP | ECCN Code | SVHC | SVHC Exceeds Threshold |
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TK20N60W,S1VF(S
Trans MOSFET N-CH Si 600V 20A 3-Pin(3+Tab) TO-247
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 600 | ±30 | 3.7 | 165000 | 20 | 155@10V | 48@10V | 48 | 1680@300V | 3 | TO-247 | TO | No | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
RN2310(TE85L,F)
Trans Digital BJT PNP 50V 0.1A 100mW 3-Pin USM T/R
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Toshiba | Digital-BJT | PNP | Single | 50 | 0.1 | 4.7 | 100 | 120@1mA@5V | 0.3@0.25mA@5mA | Tape and Reel | 3 | USM | No | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TPH1R405PL,L1Q
Trans MOSFET N-CH Si 45V 232A 8-Pin SOP Advance T/R
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Von 0,5235 € bis 0,5673 €
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single Quad Drain Triple Source | Enhancement | 1 | 45 | ±20 | 2.4 | 3000 | 232 | 1.4@10V | 74@10V|36@4.5V | 74 | 4830@22.5V | Tape and Reel | 8 | SOP Advance | SO | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TK16A60W,S4VX
Trans MOSFET N-CH Si 600V 15.8A 3-Pin(3+Tab) TO-220SIS Magazine
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Von 1,0967 € bis 1,1716 €
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 600 | ±30 | 40000 | 15.8 | 190@10V | 38@10V | 38 | 1350@300V | Magazine | 3 | TO-220SIS | TO | No | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TBAT54,LM
Diode Small Signal Schottky 35V 0.2A 3-Pin SOT-23 T/R
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Von 0,019 € bis 0,0207 €
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Toshiba | Gleichrichter | Small Signal Schottky Diode | Single | 35 | 0.2 | 1 | 0.58@0.1A | 2 | 320 | 1.5 | Tape and Reel | 3 | SOT-23 | SOT | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TJ90S04M3L,LQ
Trans MOSFET P-CH Si 40V 90A 3-Pin(2+Tab) DPAK+ T/R Automotive AEC-Q101
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Von 0,8151 € bis 0,8708 €
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Toshiba | MOSFETs | Power MOSFET | Si | P | Single | Enhancement | 1 | 40 | 10 | 2 | 180000 | 90 | 4.3@10V | 172@10V | 172 | 7700@10V | Tape and Reel | 3 | DPAK+ | TO | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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2SK2952(Q)
Trans MOSFET N-CH Si 400V 8.5A 3-Pin(3+Tab) TO-220NIS
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 400 | ±30 | 40000 | 8.5 | 550@10V | 34@10V | 34 | 1340@10V | 3 | TO-220NIS | TO | No | No | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
CVJ10F30,LF
Diode Small Signal Schottky 32V 1A 5-Pin UFV T/R
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Von 0,061 € bis 0,0665 €
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Toshiba | Gleichrichter | Small Signal Schottky Diode | Dual Parallel | 32 | 1 | 5 | 0.57 | 50 | Tape and Reel | 5 | UFV | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SD1509(Q)
Trans Darlington NPN 80V 2A 1500mW 3-Pin(3+Tab) TO-126IS
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Toshiba | Darlington BJT | NPN | Single | 80 | 80 | 1 | 2 | 8 | 2@1mA@1A | 1500 | 2000@1A@2V | 1.5@1mA@1A | 3 | TO-126IS | TO | No | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TK16J60W5,S1VQ
Trans MOSFET N-CH Si 600V 15.8A 3-Pin(3+Tab) TO-3PN Tube
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Von 2,1411 € bis 2,3146 €
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 600 | ±30 | 4.5 | 130000 | 15.8 | 230@10V | 43@10V | 43 | 1350@300V | DTMOSIV | Tube | 3 | TO-3PN | TO | No | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TK200F04N1L,LXGQ
Trans MOSFET N-CH Si 40V 200A 3-Pin(2+Tab) TO-220SM(W) T/R Automotive AEC-Q101
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 40 | ±20 | 3 | 375000 | 200 | 0.9@10V | 214@10V | 214 | 14920@10V | U-MOS VIII-H | Tape and Reel | 3 | TO-220SM(W) | TO | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SSM3K37CT,L3F
Trans MOSFET N-CH Si 20V 0.2A 3-Pin CST T/R
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Von 0,0284 € bis 0,031 €
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Toshiba | MOSFETs | Small Signal | Si | N | Single | Enhancement | 1 | 20 | ±10 | 100 | 0.2 | 2200@4.5V | 12@10V | Tape and Reel | 3 | CST | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1ZB100(Q) Zener Diode Single 100V 10% 300Ohm 1000mW 2-Pin DO-41SS |
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Toshiba | Zener | Voltage Regulator | Single | 100 | 10% | 3 | 10 | 300 | 1000 | 1000 | 2 | DO-41SS | DO | No | Unknown | No | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
02CZ2.0-X(TE85L,F)
Zener Diode Single 1.95V 2.5% 100Ohm 200mW 3-Pin S-Mini T/R
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Toshiba | Zener | Voltage Regulator | Single | 1.95 | 2.5% | 5 | 120 | 100 | 200 | 200 | Tape and Reel | 3 | S-Mini | SOT | No | Unknown | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
U10FWJ2C48M(Q)
Diode Schottky 30V 10A 3-Pin(2+Tab) TO-220SM
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Toshiba | Gleichrichter | Schottky Diode | Dual Common Cathode | 30 | 10 | 110 | 0.47@5A | 3500 | 3 | TO-220SM | TO | No | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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TK4A50D(Q)
Trans MOSFET N-CH Si 500V 4A 3-Pin(3+Tab) TO-220SIS
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 500 | ±30 | 30000 | 4 | 2000@10V | 9@10V | 9 | 380@25V | 3 | TO-220SIS | TO | No | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TPCP8205-H,LF(CM
Trans MOSFET N-CH Si 30V 6.5A 8-Pin PS T/R
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Toshiba | MOSFETs | Power MOSFET | Si | N | Dual Dual Drain | Enhancement | 2 | 30 | ±20 | 2.3 | 1480 | 6.5 | 26@10V | 13.8@10V | 13.8 | 830@10V | Tape and Reel | 8 | PS | No | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
S5566B(Q)
Diode 100V 1A 2-Pin DO-41S
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Toshiba | Gleichrichter | Single | 100 | 1 | 45 | 1.2 | 10 | 2 | DO-41S | DO | No | No | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SSM6K514NU,LF
Trans MOSFET N-CH Si 40V 12A 6-Pin UDFN-B EP T/R
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Von 0,1062 € bis 0,1201 €
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single Quad Drain | Enhancement | 1 | 40 | ±20 | 2500 | 12 | 11.6@10V | 7.5@4.5V | 1110@20V | Tape and Reel | 6 | UDFN-B EP | DFN | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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TPH2R104PL,LQ
Trans MOSFET N-CH Si 40V 180A 8-Pin SOP Advance T/R
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Von 0,4788 € bis 0,5188 €
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single Quad Drain Triple Source | Enhancement | 1 | 40 | ±20 | 2.4 | 1800 | 180 | 2.1@10V | 37@4.5V|78@10V | 78 | 4790@20V | 1.6@10V|2.2@4.5V | Tape and Reel | 8 | SOP Advance | SO | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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TTD1410B,S4X(S
Trans Darlington NPN 250V 6A 3-Pin(3+Tab) TO-220SIS Magazine
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Toshiba | Darlington BJT | NPN | Single | 250 | 1 | 6 | Magazine | 3 | TO-220SIS | TO | No | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SK2991(TE24L,Q) Trans MOSFET N-CH Si 500V 5A 3-Pin(3+Tab) T/R |
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 500 | ±30 | 50000 | 5 | 1500@10V | 17@10V | 17 | 780@10V | Tape and Reel | 3 | No | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SK2542(F)
Trans MOSFET N-CH Si 500V 8A 3-Pin(3+Tab) TO-220AB
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 500 | ±30 | 80000 | 8 | 850@10V | 30@10V | 30 | 1300@10V | 3 | TO-220AB | TO | No | No | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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TK5A80E,S4X
Trans MOSFET N-CH Si 800V 5A 3-Pin(3+Tab) TO-220SIS Tube
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Von 0,5899 € bis 0,6392 €
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 800 | ±30 | 4 | 40000 | 5 | 2400@10V | 20@10V | 20 | 950@25V | Tube | 3 | TO-220SIS | TO | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
CMS19(TE12L,Q)
Rectifier Diode Schottky
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Toshiba | Gleichrichter | Tape and Reel | 2 | M-FLAT | No | No | No | No |