Toshiba Diodes, Transistors and Thyristors
| Teile-Nr. | Preis | Bestand | Hersteller | Kategorie | Type | Maximum Rate of Rise of Off-State Voltage - (V/us) | Category | Maximum Rate of Rise of On-State Current - (A/us) | Material | Frequency Band | Channel Type | Maximum Gate Trigger Voltage - (V) | Configuration | Channel Mode | Typical Zener Voltage - (V) | Repetitive Peak Reverse Voltage - (V) | Peak Reverse Repetitive Voltage - (V) | Maximum Reverse Voltage - (V) | Maximum Gate Trigger Current - (mA) | Maximum Gate Emitter Voltage - (V) | Maximum Collector-Emitter Voltage - (V) | Zener Voltage Tolerance | Surge Current Rating - (A) | Maximum Reverse Current - (uA) | Maximum Continuous Forward Current - (A) | Maximum Collector-Base Voltage - (V) | Number of Elements per Chip | Minimum Tuning Ratio | Maximum Holding Current - (mA) | Maximum Drain-Gate Voltage - (V) | Maximum Continuous DC Collector Current - (A) | Maximum Base-Emitter Voltage - (V) | Typical Input Resistance - (kOhm) | Tuning Ratio Test Condition | Test Current - (mA) | Peak Non-Repetitive Forward Surge Current - (A) | Maximum Series Resistance @ Maximum IF - (Ohm) | Maximum Forward Voltage - (V) | Maximum Drain-Source Voltage - (V) | Maximum Base-Emitter Saturation Voltage - (V) | Typical Resistor Ratio | Peak Reverse Current - (uA) | Maximum Reverse Leakage Current - (uA) | Maximum Gate-Source Voltage - (V) | Maximum DC Collector Current - (A) | Peak On-State Voltage - (V) | Operational Bias Conditions | Minimum Diode Capacitance - (pF) | Maximum Junction Ambient Thermal Resistance | Maximum Gate Threshold Voltage - (V) | Maximum Gate Peak Inverse Voltage - (V) | Maximum Zener Impedance - (Ohm) | Maximum Power Dissipation - (mW) | Maximum Power Dissipation @ 25C - (mW) | Maximum Diode Capacitance - (pF) | Maximum Continuous Drain Current - (A) | RMS On-State Current - (A) | Repetitive Peak Forward Blocking Voltage - (V) | Rated Average On-State Current - (A) | Peak Reverse Recovery Time - (ns) | Minimum DC Current Gain Range | Minimum DC Current Gain | Maximum Drain-Source Resistance - (mOhm) | Typical Gate Charge @ Vgs - (nC) | Repetitive Peak Off-State Current - (mA) | Maximum Junction Case Thermal Resistance | Typical Gate Charge @ 10V - (nC) | Typical Output Capacitance - (pF) | Typical Input Capacitance @ Vds - (pF) | Typical Power Gain - (dB) | Maximum Output Power - (W) | Maximum Collector-Emitter Saturation Voltage - (V) | Maximum Frequency - (MHz) | Typical 3rd Order Intercept Point - (dBm) | Maximum Transition Frequency - (MHz) | Maximum Noise Figure - (dB) | Typical Drain-Source Resistance @ 25°C - (mOhm) | Process Technology | Packaging | Pin Count | Supplier Package | Standard Package Name | CECC Qualified | ESD Protection | Military | AEC Qualified | AEC Qualified Number | Auto motive | P PAP | ECCN Code | SVHC | SVHC Exceeds Threshold |
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| TBC847B,LM(B Silicon NPN Epitaxial Type |
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Toshiba | GP BJT | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SSM3K131TU,LF
Trans MOSFET N-CH Si 30V 6A 3-Pin UFM T/R Automotive AEC-Q101
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Von 0,1304 € bis 0,1413 €
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Toshiba | MOSFETs | Small Signal | Si | N | Single | Enhancement | 1 | 30 | ±20 | 2.5 | 1000 | 6 | 27.6@10V | 10.1@10V | 10.1 | 450@15V | Tape and Reel | 3 | UFM | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TPW2R508NH,L1Q
Trans MOSFET N-CH Si 75V 170A 8-Pin DSOP EP Advance T/R
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Von 0,9159 € bis 0,9784 €
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single Quad Drain Triple Source | Enhancement | 1 | 75 | ±20 | 2500 | 170 | 2.5@10V | 72@10V | 72 | 4600@37.5V | 2@10V | Tape and Reel | 8 | DSOP EP Advance | SO | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TK055U60Z1,RQ
Trans MOSFET N-CH Si 600V 40A 9-Pin(8+Tab) TOLL T/R
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Von 2,9776 € bis 3,1957 €
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single Hex Source | Enhancement | 1 | 600 | ±30 | 270000 | 40 | 55@10V | 65@10V | 65 | 3680@300V | Tape and Reel | 9 | TOLL | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
CMZB30(TE12L,Q)
Zener Diode Single 30V 10% 30Ohm 1000mW 2-Pin M-FLAT T/R
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Toshiba | Zener | Voltage Regulator | Single | 30 | 10% | 10 | 10 | 30 | 1000 | Tape and Reel | 2 | M-FLAT | Unknown | No | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TK7A90E,S4X
Trans MOSFET N-CH Si 900V 7A 3-Pin(3+Tab) TO-220SIS Tube
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Von 0,7773 € bis 0,8304 €
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 900 | ±30 | 45000 | 7 | 2000@10V | 32@10V | 32 | 1350@25V | Tube | 3 | TO-220SIS | TO | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
1SV282(TPH2,F)
Diode VAR Cap Single 34V 33pF 2-Pin ESC T/R
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Toshiba | Varaktors | Tuner | Single | 34 | 0.01 | 12 | 2V/25V | 33@2V | Tape and Reel | 2 | ESC | SOD | No | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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TK17A65W,S5X
Trans MOSFET N-CH Si 650V 17.3A 3-Pin(3+Tab) TO-220SIS Tube
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Von 1,2247 € bis 1,3089 €
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 650 | ±30 | 3.5 | 45000 | 17.3 | 200@10V | 45@10V | 45 | 1800@300V | Tube | 3 | TO-220SIS | TO | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
1SS406(TPH3,F)
Diode Small Signal Schottky 25V 0.1A 2-Pin USC T/R
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Toshiba | Gleichrichter | Small Signal Schottky Diode | Single | 25 | 0.1 | 1 | 0.55@0.05A | 0.5 | 200 | Tape and Reel | 2 | USC | SOD | No | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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TK13A65U(STA4,Q,M)
Trans MOSFET N-CH Si 650V 13A 3-Pin(3+Tab) TO-220SIS
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 650 | ±30 | 40000 | 13 | 380@10V | 17@10V | 17 | 950@10V | 3 | TO-220SIS | TO | No | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
CRG09(TE85L,Q,M)
Diode Si 400V 1A 2-Pin S-FLAT T/R Automotive AEC-Q101
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Toshiba | Gleichrichter | Si | Single | 400 | 1 | 15 | 1.1@0.7A | 10 | Tape and Reel | 2 | S-FLAT | No | Yes | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MSZ5V6,LF
Zener Diode Single 5.6V 6% 30Ohm 600mW 3-Pin S-Mini T/R
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Toshiba | Zener | Voltage Regulator | Single | 5.6 | 6% | 5 | 1 | 30 | 600 | 600 | 125(Typ) | Tape and Reel | 3 | S-Mini | SOT | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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TK31A60W,S4VX
Trans MOSFET N-CH Si 600V 30.8A 3-Pin(3+Tab) TO-220SIS Tube
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Von 3,4233 € bis 3,6733 €
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 600 | ±30 | 3.7 | 45000 | 30.8 | 88@10V | 86@10V | 86 | 3000@300V | Tube | 3 | TO-220SIS | TO | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
CRZ16(TE85L,Q)
Zener Diode Single 16V 10% 30Ohm 700mW 2-Pin S-FLAT T/R
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Toshiba | Zener | Voltage Regulator | Single | 16 | 10% | 10 | 10 | 30 | 700 | 700 | Tape and Reel | 2 | S-FLAT | No | Unknown | No | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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1SS387,H3F(T
Diode Switching 85V 0.1A 2-Pin ESC Automotive AEC-Q101
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Toshiba | Gleichrichter | Switching Diode | Single | 85 | 0.1 | 1 | 1.2 | 0.5 | 200 | 4 | 2 | ESC | SOD | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TK16E60W5,S1VX
Trans MOSFET N-CH 600V 15.8A 3-Pin(3+Tab) TO-220 Tube
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Von 1,5983 € bis 1,7039 €
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Toshiba | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 600 | ±30 | 4.5 | 130000 | 15.8 | 230@10V | 43@10V | 43 | 1350@300V | Tube | 3 | TO-220 | TO | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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CUS05F30,H3F(B
Diode Small Signal Schottky Si 0.5A 2-Pin USC T/R
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Toshiba | Gleichrichter | Small Signal Schottky Diode | Si | Single | 0.5 | 5 | 0.45 | 50 | 120(Typ) | Tape and Reel | 2 | USC | SOD | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
RN1701,LF(T
Transistor Silicon NPN Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor)
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Toshiba | Digital-BJT | Tape and Reel | 5 | USV | SOT | No | No | No | No | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SJ465(TE12L,F)
Trans MOSFET P-CH Si 16V 2A 4-Pin(3+Tab) PW-Mini T/R
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Toshiba | MOSFETs | Power MOSFET | Si | P | Single Dual Drain | Enhancement | 1 | 16 | ±8 | 1500 | 2 | 710@4V | 5@5V | 270@10V | Tape and Reel | 4 | PW-Mini | SOT | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SSM3J375F,LF
Trans MOSFET P-CH Si 20V 2A 3-Pin S-Mini T/R Automotive AEC-Q101
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Von 0,0488 € bis 0,0532 €
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Toshiba | MOSFETs | Small Signal | Si | P | Single | Enhancement | 1 | 20 | 6 | 1200 | 2 | 150@4.5V | 4.6@4.5V | 270@10V | Tape and Reel | 3 | S-Mini | SOT | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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CMZB22(TE12L,Q)
Zener Diode Single 22V 10% 30Ohm 1000mW 2-Pin M-FLAT T/R
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Toshiba | Zener | Voltage Regulator | Single | 22 | 10% | 10 | 10 | 30 | 1000 | Tape and Reel | 2 | M-FLAT | Unknown | No | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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CMZ16(TE12L,Q)
Zener Diode Single 16V 10% 30Ohm 2000mW 2-Pin M-FLAT T/R
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Toshiba | Zener | Voltage Regulator | Single | 16 | 10% | 10 | 10 | 30 | 2000 | Tape and Reel | 2 | M-FLAT | No | Unknown | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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2SK3567(Q)
Trans MOSFET N-CH Si 600V 3.5A 3-Pin(3+Tab) TO-220SIS
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 600 | ±30 | 35000 | 3.5 | 2200@10V | 16@10V | 16 | 550@25V | 3 | TO-220SIS | TO | No | No | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SSM3K324R,LF(B
Trans MOSFET N-CH Si 30V 4A 3-Pin SOT-23F
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 30 | ±12 | 1 | 2000 | 4 | 56@4.5V | 2.2@4.5V | 200@10V | 3 | SOT-23F | SOT | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SSM6L61NU,LF Trans MOSFET N/P-CH Si 20V 4A Automotive AEC-Q101 6-Pin UDFN EP T/R |
Von 0,116 € bis 0,1257 €
pro Stück
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Toshiba | MOSFETs | Power MOSFET | Si | N|P | Dual | Enhancement | 2 | 20 | ±8@N Channel|±12@P Channel | 1@N Channel|1.2@P Channel | 2000 | 4 | 33@4.5V@N Channel|45@10V@P Channel | 3.6@4.5V@N Channel|6.74@4.5V@P Channel | 410@10V@N Channel|480@10V@P Channel | Tape and Reel | 6 | UDFN EP | DFN | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No |