Toshiba Diodes, Transistors and Thyristors
| Teile-Nr. | Preis | Bestand | Hersteller | Kategorie | Type | Category | Maximum Rate of Rise of On-State Current - (A/us) | Maximum Rate of Rise of Off-State Voltage - (V/us) | Material | Frequency Band | Channel Type | Repetitive Peak Off-State Current - (mA) | Configuration | Channel Mode | Typical Zener Voltage - (V) | Peak Reverse Repetitive Voltage - (V) | Maximum Reverse Voltage - (V) | Maximum Gate Trigger Voltage - (V) | Maximum Gate Emitter Voltage - (V) | Maximum Collector-Emitter Voltage - (V) | Zener Voltage Tolerance | Surge Current Rating - (A) | Number of Elements per Chip | Maximum Reverse Current - (uA) | Maximum Gate Trigger Current - (mA) | Maximum Continuous Forward Current - (mA) | Maximum Collector-Base Voltage - (V) | Minimum Tuning Ratio | Maximum Holding Current - (mA) | Maximum Drain-Gate Voltage - (V) | Maximum Base-Emitter Voltage - (V) | Typical Input Resistance - (kOhm) | Tuning Ratio Test Condition | Test Current - (mA) | Peak Non-Repetitive Forward Surge Current - (A) | Maximum Series Resistance @ Maximum IF - (Ohm) | Maximum Forward Voltage - (V) | Maximum Drain-Source Voltage - (V) | Maximum Base-Emitter Saturation Voltage - (V) | Typical Resistor Ratio | Repetitive Peak Reverse Voltage - (V) | Peak Reverse Current - (uA) | Maximum Reverse Leakage Current - (uA) | Maximum Gate-Source Voltage - (V) | Maximum DC Collector Current - (A) | Maximum Continuous DC Collector Current - (A) | Operational Bias Conditions | Minimum Diode Capacitance - (pF) | Maximum Gate Threshold Voltage - (V) | Maximum Gate Peak Inverse Voltage - (V) | Peak On-State Voltage - (V) | Maximum Zener Impedance - (Ohm) | Maximum Power Dissipation @ 25C - (mW) | Maximum Diode Capacitance - (pF) | Maximum Continuous Drain Current - (A) | Repetitive Peak Forward Blocking Voltage - (V) | Peak Reverse Recovery Time - (ns) | Minimum DC Current Gain Range | Minimum DC Current Gain | Maximum Drain-Source Resistance - (mOhm) | Typical Gate Charge @ Vgs - (nC) | Rated Average On-State Current - (A) | Maximum Junction Ambient Thermal Resistance | RMS On-State Current - (A) | Maximum Junction Case Thermal Resistance | Typical Input Capacitance - (pF) | Typical Gate Charge @ 10V - (nC) | Maximum Power Dissipation - (mW) | Maximum Collector-Emitter Saturation Voltage - (V) | Typical Output Capacitance - (pF) | Typical Input Capacitance @ Vds - (pF) | Maximum Output Power - (W) | Typical Power Gain - (dB) | Typical 3rd Order Intercept Point - (dBm) | Maximum Transition Frequency - (MHz) | Maximum Noise Figure - (dB) | Maximum Turn-On Time - (ns) | Typical Drain-Source Resistance @ 25°C - (mOhm) | Process Technology | Packaging | Pin Count | Supplier Package | Standard Package Name | CECC Qualified | ESD Protection | Military | AEC Qualified | AEC Qualified Number | Auto motive | P PAP | ECCN Code | SVHC | SVHC Exceeds Threshold |
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SSM3J15F,LF(T
Trans MOSFET P-CH Si 30V 0.1A 3-Pin S-Mini T/R
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Bestand
7.594
Von 0,031 € bis 0,0973 €
pro Stück
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Toshiba | MOSFETs | Small Signal | Si | P | Single | Enhancement | 1 | 30 | ±20 | 0.1 | 12000@4V | 200 | 9.1@3V | Tape and Reel | 3 | S-Mini | SOT | No | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SC4409(TE12L,ZC)
Trans GP BJT NPN 50V 2A 1000mW 4-Pin(3+Tab) PW-Mini T/R
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Bestand
1.000
Von 0,1016 € bis 0,2814 €
pro Stück
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Toshiba | GP BJT | NPN | Bipolar Power | Si | Single Dual Collector | 50 | 1 | 80 | 6 | 1.2@0.05@1A | 2 | 30 to 50|50 to 120|120 to 200 | 40@1.5A@2V|120@100mA@2V | 1000 | 0.5@0.05A@1A | 14 | 100(Typ) | Tape and Reel | 4 | PW-Mini | SOT | No | No | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
CBS10S30,L3F(T
Diode Small Signal Schottky Si 30V 1A 2-Pin CST-B T/R
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Bestand
400
1,5286 €
pro Stück
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Toshiba | Gleichrichter | Small Signal Schottky Diode | Si | Single | 30 | 1 | 3 | 0.45 | 500 | 135(Typ) | Tape and Reel | 2 | CST-B | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
HN1C01FUGRLFT
Trans GP BJT NPN 50V 0.15A 200mW 6-Pin US T/R
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Bestand
1.050
Von 0,0294 € bis 0,0624 €
pro Stück
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Toshiba | GP BJT | NPN | Bipolar Small Signal | Si | Dual | 50 | 2 | 60 | 5 | 0.15 | 200 to 300 | 200@2mA@6V | 200 | 0.25@10mA@100mA | Tape and Reel | 6 | US | No | Unknown | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
XPH4R714MC,L1XHQ
Trans MOSFET P-CH Si 40V 60A 8-Pin SOP Advance(WF) EP T/R Automotive AEC-Q101
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Bestand
4.566
Von 0,4177 € bis 0,6068 €
pro Stück
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Toshiba | MOSFETs | Power MOSFET | Si | P | Single Quad Drain Triple Source | Enhancement | 1 | 40 | 10 | 2.1 | 60 | 4.7@10V | 160@10V | 160 | 3000 | 5640@10V | Tape and Reel | 8 | SOP Advance(WF) EP | SO | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TPH11006NL,LQ
Trans MOSFET N-CH Si 60V 40A 8-Pin SOP Advance T/R
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Bestand
1.883
Von 0,295 € bis 0,3251 €
pro Stück
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single Quad Drain Triple Source | Enhancement | 1 | 60 | ±20 | 40 | 11.4@10V | 11.2@4.5V|23@10V | 23 | 2800 | 2000@30V | Tape and Reel | 8 | SOP Advance | SO | No | No | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TPN8R903NL,LQ(S
Trans MOSFET N-CH Si 30V 37A 8-Pin TSON Advance T/R
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Bestand
375
Von 0,1867 € bis 0,3014 €
pro Stück
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single Quad Drain Triple Source | Enhancement | 1 | 30 | ±20 | 2.3 | 37 | 8.9@10V | 4.4@4.5V|9.8@10V | 9.8 | 22000 | 630@15V | U-MOS VIII-H | Tape and Reel | 8 | TSON Advance | SON | No | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
RN2310,LF(B
Trans Digital BJT PNP 50V 0.1A 100mW 3-Pin USM T/R
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Bestand
6.000
0,0122 €
pro Stück
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Toshiba | Digital-BJT | PNP | Single | 50 | 4.7 | 0.1 | 120@1mA@5V | 100 | 0.3@0.25mA@5mA | Tape and Reel | 3 | USM | No | No | No | No | 5A991 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TK65E10N1,S1X
Trans MOSFET N-CH Si 100V 148A 3-Pin(3+Tab) TO-220 Magazine
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Bestand
34
0,8565 €
pro Stück
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 100 | ±20 | 4 | 148 | 4.8@10V | 81@10V | 81 | 192000 | 5400@50V | Magazine | 3 | TO-220 | TO | No | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TK090U65Z,RQ
Trans MOSFET N-CH Si 650V 30A 9-Pin(8+Tab) TOLL T/R
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Bestand
1.646
1,7918 €
pro Stück
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single Hex Source | Enhancement | 1 | 650 | ±30 | 4 | 30 | 90@10V | 47@10V | 47 | 230000 | 2780@300V | Tape and Reel | 9 | TOLL | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
RN1108MFV,L3F(T
Transistor Silicon NPN Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications
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Bestand
7.200
Von 0,0151 € bis 0,0201 €
pro Stück
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Toshiba | Digital-BJT | Tape and Reel | 3 | VESM | SOT | No | No | No | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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2SA1298-Y,LXGF(T
Trans GP BJT PNP 25V 0.8A 200mW Automotive AEC-Q101 3-Pin S-Mini T/R
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Bestand
2.680
Von 0,0669 € bis 0,1503 €
pro Stück
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Toshiba | GP BJT | PNP | Bipolar Small Signal | Si | Single | 25 | 1 | 30 | 5 | 0.8 | 120 to 200 | 160@100mA@1V | 200 | 0.4@20mA@500mA | Tape and Reel | 3 | S-Mini | SOT | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TK39N60W,S1VF(S
Trans MOSFET N-CH Si 600V 38.8A 3-Pin(3+Tab) TO-247
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Bestand
23
Von 5,0722 € bis 5,7757 €
pro Stück
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 600 | ±30 | 38.8 | 65@10V | 110@10V | 110 | 270000 | 4100@300V | 3 | TO-247 | TO | No | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TK065Z65Z,S1F(O Trans MOSFET N-CH Si 650V 38A 4-Pin(4+Tab) TO-247 |
Bestand
25
Von 4,8638 € bis 7,009 €
pro Stück
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single Dual Source | Enhancement | 1 | 650 | ±30 | 38 | 65@10V | 62@10V | 270000 | 3650@300V | 4 | TO-247 | TO | No | No | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SB906-Y(TE16L1,NQ)
Trans GP BJT PNP 60V 3A 1000mW 3-Pin(2+Tab) New PW-Mold T/R
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Bestand
1.725
Von 0,667 € bis 1,5981 €
pro Stück
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Toshiba | GP BJT | PNP | Bipolar Power | Si | Single | 60 | 1 | 60 | 7 | 3 | 50 to 120 | 100@0.5A@5V | 1000 | 1.7@0.3A@3A | Tape and Reel | 3 | New PW-Mold | TO | No | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
RN1702,LF(T
Trans Digital BJT NPN 50V 0.1A 200mW 5-Pin USV T/R
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Bestand
2.452
Von 0,0517 € bis 0,0663 €
pro Stück
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Toshiba | Digital-BJT | NPN | Dual Common Emitter | 50 | 10 | 1 | 0.1 | 50@10mA@5V | 200 | 0.3@0.25mA@5mA | Tape and Reel | 5 | USV | SOT | No | No | No | No | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SSM6L820R,LF
Trans MOSFET N/P-CH Si 30V/20V 4A 6-Pin TSOP-F T/R Automotive AEC-Q101
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Bestand
1.523
0,0928 €
pro Stück
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Toshiba | MOSFETs | Power MOSFET | Si | N|P | Dual | Enhancement | 2 | 30@N Channel|20@P Channel | 12@N Channel|6@P Channel | 4 | 39.1@4.5V@N Channel|45@10V@P Channel | 3.2@4.5V@N Channel|6.7@4.5V@P Channel | 1800 | 310@15V@N Channel|480@10V@P Channel | Tape and Reel | 6 | TSOP-F | SO | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SSM3K36MFV,L3F
Trans MOSFET N-CH Si 20V 0.5A 3-Pin VESM T/R Automotive AEC-Q101
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Bestand
10.612
Von 0,0407 € bis 0,1292 €
pro Stück
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Toshiba | MOSFETs | Small Signal | Si | N | Single | Enhancement | 1 | 20 | ±10 | 0.5 | 630@5V | 1.23@4V | 150 | 46@10V | Tape and Reel | 3 | VESM | SOT | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RN1105MFV,L3F(CT Transistor Silicon NPN Epitaxial PCT Process Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications |
Bestand
49
0,0832 €
pro Stück
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Toshiba | Digital-BJT | 3 | VESM | SOT | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SSM6N24TU,LF(T
Trans MOSFET N-CH Si 30V 0.5A Automotive AEC-Q101 6-Pin UF T/R
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Bestand
3.400
Von 0,1537 € bis 0,2944 €
pro Stück
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Toshiba | MOSFETs | Small Signal | Si | N | Dual | Enhancement | 2 | 30 | ±12 | 0.5 | 145@4.5V | 500 | 245@10V | Tape and Reel | 6 | UF | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TK8A60W,S4VX(M
Trans MOSFET N-CH Si 600V 8A 3-Pin(3+Tab) TO-220SIS Magazine
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Bestand
50
Von 0,773 € bis 1,7371 €
pro Stück
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 600 | ±30 | 3.7 | 8 | 500@10V | 18.5@10V | 18.5 | 30000 | 570@300V | Magazine | 3 | TO-220SIS | TO | No | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SSM3J36FS,LXGF(T
Trans MOSFET P-CH Si 20V 0.33A 3-Pin SSM T/R Automotive AEC-Q101
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Bestand
3.000
Von 0,0657 € bis 0,1477 €
pro Stück
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Toshiba | MOSFETs | Small Signal | Si | P | Single | Enhancement | 1 | 20 | ±8 | 0.33 | 1310@4.5V | 1.2@4V | 150 | 43@10V | Tape and Reel | 3 | SSM | No | No | Yes | AEC-Q101 | Yes | Unknown | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TMBT3904,LM
Trans GP BJT NPN 50V 0.15A 1000mW 3-Pin SOT-23 T/R
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Bestand
13
0,012 €
pro Stück
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Toshiba | GP BJT | NPN | Bipolar Small Signal | Si | Single | 50 | 1 | 60 | 5 | 0.85@1mA@10mA|0.95@5mA@50mA | 0.15 | 30 to 50|50 to 120 | 60@0.1mA@1V|80@1mA@1V|100@10mA@1V|60@50mA@1V|30@100mA@1V | 1000 | 0.2@1mA@10mA|0.3@5mA@50mA | 10 | Tape and Reel | 3 | SOT-23 | SOT | No | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TK31V60W,LVQ(S
Trans MOSFET N-CH Si 600V 30.8A 5-Pin DFN EP
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Bestand
1.780
Von 1,4765 € bis 3,4567 €
pro Stück
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single Triple Source | Enhancement | 1 | 600 | ±30 | 3.7 | 30.8 | 98@10V | 86@10V | 86 | 240000 | 3000@300V | DTMOSIV | 5 | DFN EP | DFN | No | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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TK3R1A04PL,S4X(S
Trans MOSFET N-CH Si 40V 82A 3-Pin(3+Tab) TO-220SIS
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Bestand
157
Von 0,6123 € bis 1,6849 €
pro Stück
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 40 | ±20 | 82 | 3.1@10V | 29.7@4.5V|63.4@10V | 36000 | 4670@20V | 3 | TO-220SIS | TO | No | No | No | EAR99 |