Toshiba Diodes, Transistors and Thyristors
| Teile-Nr. | Preis | Bestand | Hersteller | Kategorie | Type | Category | Maximum Rate of Rise of On-State Current - (A/us) | Maximum Rate of Rise of Off-State Voltage - (V/us) | Material | Frequency Band | Channel Type | Repetitive Peak Off-State Current - (mA) | Configuration | Channel Mode | Typical Zener Voltage - (V) | Peak Reverse Repetitive Voltage - (V) | Maximum Reverse Voltage - (V) | Maximum Gate Trigger Voltage - (V) | Maximum Gate Emitter Voltage - (V) | Maximum Collector-Emitter Voltage - (V) | Zener Voltage Tolerance | Surge Current Rating - (A) | Number of Elements per Chip | Maximum Reverse Current - (uA) | Maximum Gate Trigger Current - (mA) | Maximum Continuous Forward Current - (mA) | Maximum Collector-Base Voltage - (V) | Minimum Tuning Ratio | Maximum Holding Current - (mA) | Maximum Drain-Gate Voltage - (V) | Maximum Base-Emitter Voltage - (V) | Typical Input Resistance - (kOhm) | Tuning Ratio Test Condition | Test Current - (mA) | Peak Non-Repetitive Forward Surge Current - (A) | Maximum Series Resistance @ Maximum IF - (Ohm) | Maximum Forward Voltage - (V) | Maximum Drain-Source Voltage - (V) | Maximum Base-Emitter Saturation Voltage - (V) | Typical Resistor Ratio | Repetitive Peak Reverse Voltage - (V) | Peak Reverse Current - (uA) | Maximum Reverse Leakage Current - (uA) | Maximum Gate-Source Voltage - (V) | Maximum DC Collector Current - (A) | Maximum Continuous DC Collector Current - (A) | Operational Bias Conditions | Minimum Diode Capacitance - (pF) | Maximum Gate Threshold Voltage - (V) | Maximum Gate Peak Inverse Voltage - (V) | Peak On-State Voltage - (V) | Maximum Zener Impedance - (Ohm) | Maximum Power Dissipation @ 25C - (mW) | Maximum Diode Capacitance - (pF) | Maximum Continuous Drain Current - (A) | Repetitive Peak Forward Blocking Voltage - (V) | Peak Reverse Recovery Time - (ns) | Minimum DC Current Gain Range | Minimum DC Current Gain | Maximum Drain-Source Resistance - (mOhm) | Typical Gate Charge @ Vgs - (nC) | Rated Average On-State Current - (A) | Maximum Junction Ambient Thermal Resistance | RMS On-State Current - (A) | Maximum Junction Case Thermal Resistance | Typical Input Capacitance - (pF) | Typical Gate Charge @ 10V - (nC) | Maximum Power Dissipation - (mW) | Maximum Collector-Emitter Saturation Voltage - (V) | Typical Output Capacitance - (pF) | Typical Input Capacitance @ Vds - (pF) | Maximum Output Power - (W) | Typical Power Gain - (dB) | Typical 3rd Order Intercept Point - (dBm) | Maximum Transition Frequency - (MHz) | Maximum Noise Figure - (dB) | Maximum Turn-On Time - (ns) | Typical Drain-Source Resistance @ 25°C - (mOhm) | Process Technology | Packaging | Pin Count | Supplier Package | Standard Package Name | CECC Qualified | ESD Protection | Military | AEC Qualified | AEC Qualified Number | Auto motive | P PAP | ECCN Code | SVHC | SVHC Exceeds Threshold |
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TPCP8507(TE85L,F)
Trans GP BJT NPN 120V 1A 8-Pin PS T/R
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Bestand
2.690
Von 0,1086 € bis 0,2076 €
pro Stück
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Toshiba | GP BJT | NPN | Single | 120 | 1 | 1 | 300 to 500 | 300(Max) | Tape and Reel | 8 | PS | No | No | No | No | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TPH11006NL,LQ
Trans MOSFET N-CH Si 60V 40A 8-Pin SOP Advance T/R
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Bestand
1.883
Von 0,295 € bis 0,3251 €
pro Stück
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single Quad Drain Triple Source | Enhancement | 1 | 60 | ±20 | 40 | 11.4@10V | 11.2@4.5V|23@10V | 23 | 2800 | 2000@30V | Tape and Reel | 8 | SOP Advance | SO | No | No | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
RN1404,LF(T
Trans Digital BJT NPN 50V 0.1A 200mW 3-Pin S-Mini T/R
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Bestand
2.190
Von 0,0262 € bis 0,0827 €
pro Stück
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Toshiba | Digital-BJT | NPN | Single | 50 | 47 | 1 | 0.1 | 80@10mA@5V | 200 | 0.3@0.25mA@5mA | Tape and Reel | 3 | S-Mini | SOT | No | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
CMS16(T2L,TEM,Q)
Diode Schottky 40V 3A 2-Pin M-FLAT T/R
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Bestand
260
Von 0,1181 € bis 0,2658 €
pro Stück
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Toshiba | Gleichrichter | Schottky Diode | Single | 40 | 3 | 30 | 0.55 | 200 | Tape and Reel | 2 | M-FLAT | No | No | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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TPH9R00CQH,LQ(M1
Trans MOSFET N-CH Si 150V 108A 8-Pin SOP Advance T/R
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Bestand
4.770
Von 0,8859 € bis 2,6316 €
pro Stück
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single Quad Drain Triple Source | Enhancement | 1 | 150 | ±20 | 108 | 9@10V | 36@8V|44@10V | 44 | 3000 | 3500@75V | Tape and Reel | 8 | SOP Advance | SO | No | No | No | No | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SA2060(TE12L,F)
Trans GP BJT PNP 50V 2A 2500mW 4-Pin(3+Tab) PW-Mini T/R
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Bestand
151
Von 0,1859 € bis 0,383 €
pro Stück
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Toshiba | GP BJT | PNP | Bipolar Power | Si | Single Dual Collector | 50 | 1 | 50 | 7 | 1.1@0.033A@1A | 2 | 50 to 120|120 to 200|200 to 300 | 200@0.3A@2V|100@1A@2V | 2500 | 0.2@0.033A@1A | Tape and Reel | 4 | PW-Mini | SOT | No | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TK42A12N1,S4X(S
Trans MOSFET N-CH Si 120V 88A 3-Pin(3+Tab) TO-220SIS Magazine
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Bestand
1.540
Von 0,7539 € bis 1,8065 €
pro Stück
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 120 | ±20 | 4 | 88 | 9.4@10V | 52@10V | 52 | 35000 | 3100@60V | Magazine | 3 | TO-220SIS | TO | No | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
XPH4R714MC,L1XHQ
Trans MOSFET P-CH Si 40V 60A 8-Pin SOP Advance(WF) EP T/R Automotive AEC-Q101
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Bestand
4.566
Von 0,4177 € bis 0,6068 €
pro Stück
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Toshiba | MOSFETs | Power MOSFET | Si | P | Single Quad Drain Triple Source | Enhancement | 1 | 40 | 10 | 2.1 | 60 | 4.7@10V | 160@10V | 160 | 3000 | 5640@10V | Tape and Reel | 8 | SOP Advance(WF) EP | SO | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
CBS10S30,L3F(T
Diode Small Signal Schottky Si 30V 1A 2-Pin CST-B T/R
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Bestand
400
1,5286 €
pro Stück
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Toshiba | Gleichrichter | Small Signal Schottky Diode | Si | Single | 30 | 1 | 3 | 0.45 | 500 | 135(Typ) | Tape and Reel | 2 | CST-B | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
CUZ12V,H3F
Zener Diode Single 12V 5% 30Ohm 600mW 2-Pin USC T/R
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Bestand
145
0,026 €
pro Stück
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Toshiba | Zener | Voltage Regulator | Single | 12 | 5% | 5 | 0.1 | 30 | 600 | 44(Typ) | 600 | Tape and Reel | 2 | USC | SOD | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
1SS413,L3M(T
Diode Small Signal Schottky 25V 0.05A 2-Pin SOD-923 T/R
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Bestand
150
Von 0,0693 € bis 0,1034 €
pro Stück
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Toshiba | Gleichrichter | Small Signal Schottky Diode | Single | 25 | 0.05 | 1 | 0.55 | 0.5 | 100 | Tape and Reel | 2 | SOD-923 | SOD | No | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TK65E10N1,S1X
Trans MOSFET N-CH Si 100V 148A 3-Pin(3+Tab) TO-220 Magazine
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Bestand
34
0,8565 €
pro Stück
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 100 | ±20 | 4 | 148 | 4.8@10V | 81@10V | 81 | 192000 | 5400@50V | Magazine | 3 | TO-220 | TO | No | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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2SA1721-O(TE85L,F)
Trans GP BJT PNP 300V 0.1A 150mW 3-Pin S-Mini T/R
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Bestand
10.756
Von 0,139 € bis 0,3839 €
pro Stück
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Toshiba | GP BJT | PNP | Bipolar Small Signal | Si | Single | 300 | 1 | 300 | 5 | 1.2@2mA@20mA | 0.1 | 50 to 120 | 50@20mA@10V | 150 | 0.5@2mA@20mA | Tape and Reel | 3 | S-Mini | SOT | No | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TK090U65Z,RQ
Trans MOSFET N-CH Si 650V 30A 9-Pin(8+Tab) TOLL T/R
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Bestand
1.646
1,7918 €
pro Stück
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single Hex Source | Enhancement | 1 | 650 | ±30 | 4 | 30 | 90@10V | 47@10V | 47 | 230000 | 2780@300V | Tape and Reel | 9 | TOLL | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
RN1108MFV,L3F(T
Transistor Silicon NPN Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications
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Bestand
7.200
Von 0,0151 € bis 0,0201 €
pro Stück
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Toshiba | Digital-BJT | Tape and Reel | 3 | VESM | SOT | No | No | No | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SA1618-GR(TE85L,F
Trans GP BJT PNP 50V 0.15A 300mW 5-Pin SMV T/R
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Bestand
2.390
Von 0,0763 € bis 0,165 €
pro Stück
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Toshiba | GP BJT | PNP | Bipolar Small Signal | Si | Dual Common Emitter | 50 | 2 | 50 | 5 | 0.15 | 200 to 300 | 200@2mA@6V | 300 | 0.3@10mA@100mA | Tape and Reel | 5 | SMV | SOT | No | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TK560P65Y,RQ(S
Trans MOSFET N-CH Si 650V 7A 3-Pin(2+Tab) DPAK
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Bestand
985
Von 0,4542 € bis 1,3375 €
pro Stück
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 650 | ±30 | 7 | 560@10V | 14.5@10V | 60000 | 380@300V | 3 | DPAK | TO | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SC4213-B(TE85L,F)
Trans GP BJT NPN 20V 0.3A 100mW 3-Pin USM T/R
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Bestand
708
Von 0,0928 € bis 0,3144 €
pro Stück
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Toshiba | GP BJT | NPN | Bipolar Small Signal | Si | Single | 20 | 1 | 50 | 25 | 0.3 | 300 to 500 | 350@4mA@2V | 100 | 0.1@3mA@30A | 160(Typ) | Tape and Reel | 3 | USM | No | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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1SS377(TE85L,F)
Diode Small Signal Schottky 15V 0.1A 3-Pin S-Mini T/R
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Bestand
3.210
Von 0,0455 € bis 0,0964 €
pro Stück
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Toshiba | Gleichrichter | Small Signal Schottky Diode | Dual Common Cathode | 15 | 0.1 | 1 | 0.5 | 20 | 150 | Tape and Reel | 3 | S-Mini | SOT | No | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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1SS294,LF(T
Diode Small Signal Schottky Si 45V 0.1A 3-Pin S-Mini Automotive AEC-Q101
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Bestand
1.138
Von 0,0606 € bis 0,1199 €
pro Stück
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Toshiba | Gleichrichter | Small Signal Schottky Diode | Si | Single | 45 | 0.1 | 0.6 | 5@40V | 25 | 150 | 3 | S-Mini | SOT | No | Unknown | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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1SS302A,LF(T
Diode Switching Si 85V 0.1A 3-Pin USM T/R Automotive AEC-Q101
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Bestand
1.645
Von 0,0356 € bis 0,0841 €
pro Stück
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Toshiba | Gleichrichter | Switching Diode | Si | Dual Series | 85 | 0.1 | 2 | 1.2 | 0.5 | 3 | 4 | 100 | Tape and Reel | 3 | USM | No | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
CRS10I30A(TE85L,QM
Diode Schottky 30V 1A 2-Pin S-FLAT T/R
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Bestand
119
Von 0,0877 € bis 0,1963 €
pro Stück
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Toshiba | Gleichrichter | Schottky Diode | Single | 30 | 1 | 20 | 0.39@0.7A | 60 | Tape and Reel | 2 | S-FLAT | No | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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TPH2R506PL,L1Q(M
Trans MOSFET N-CH Si 60V 160A 8-Pin SOP Advance
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Bestand
3.201
1,9542 €
pro Stück
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 60 | ±20 | 2.5 | 160 | 2500@10V | 60@10V|32@4.5V | 60 | 3000 | 4180@30V | 8 | SOP Advance | SO | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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TK8A50D(STA4,Q,M)
Trans MOSFET N-CH Si 500V 8A 3-Pin(3+Tab) TO-220SIS
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Bestand
5
1,7544 €
pro Stück
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 500 | ±30 | 8 | 850@10V | 16@10V | 16 | 40000 | 800@25V | 3 | TO-220SIS | TO | No | No | No | No | No | EAR99 | Yes | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SC5198-O(Q)
Trans GP BJT NPN 140V 10A 100000mW 3-Pin(3+Tab) TO-3PN
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Bestand
73
Von 0,9901 € bis 2,2408 €
pro Stück
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Toshiba | GP BJT | NPN | Bipolar Power | Si | Single | 140 | 1 | 140 | 5 | 10 | 50 to 120 | 80@1A@5V | 100000 | 2@0.7A@7A | 3 | TO-3PN | TO | No | No | No | No | No | EAR99 |