Toshiba Diodes, Transistors and Thyristors
| Teile-Nr. | Preis | Bestand | Hersteller | Kategorie | Type | Category | Maximum Rate of Rise of On-State Current - (A/us) | Maximum Rate of Rise of Off-State Voltage - (V/us) | Material | Frequency Band | Channel Type | Repetitive Peak Off-State Current - (mA) | Configuration | Channel Mode | Typical Zener Voltage - (V) | Peak Reverse Repetitive Voltage - (V) | Maximum Reverse Voltage - (V) | Maximum Gate Trigger Voltage - (V) | Maximum Gate Emitter Voltage - (V) | Maximum Collector-Emitter Voltage - (V) | Zener Voltage Tolerance | Surge Current Rating - (A) | Number of Elements per Chip | Maximum Reverse Current - (uA) | Maximum Gate Trigger Current - (mA) | Maximum Continuous Forward Current - (mA) | Maximum Collector-Base Voltage - (V) | Minimum Tuning Ratio | Maximum Holding Current - (mA) | Maximum Drain-Gate Voltage - (V) | Maximum Base-Emitter Voltage - (V) | Typical Input Resistance - (kOhm) | Tuning Ratio Test Condition | Test Current - (mA) | Peak Non-Repetitive Forward Surge Current - (A) | Maximum Series Resistance @ Maximum IF - (Ohm) | Maximum Forward Voltage - (V) | Maximum Drain-Source Voltage - (V) | Maximum Base-Emitter Saturation Voltage - (V) | Typical Resistor Ratio | Repetitive Peak Reverse Voltage - (V) | Peak Reverse Current - (uA) | Maximum Reverse Leakage Current - (uA) | Maximum Gate-Source Voltage - (V) | Maximum DC Collector Current - (A) | Maximum Continuous DC Collector Current - (A) | Operational Bias Conditions | Minimum Diode Capacitance - (pF) | Maximum Gate Threshold Voltage - (V) | Maximum Gate Peak Inverse Voltage - (V) | Peak On-State Voltage - (V) | Maximum Zener Impedance - (Ohm) | Maximum Power Dissipation @ 25C - (mW) | Maximum Diode Capacitance - (pF) | Maximum Continuous Drain Current - (A) | Repetitive Peak Forward Blocking Voltage - (V) | Peak Reverse Recovery Time - (ns) | Minimum DC Current Gain Range | Minimum DC Current Gain | Maximum Drain-Source Resistance - (mOhm) | Typical Gate Charge @ Vgs - (nC) | Rated Average On-State Current - (A) | Maximum Junction Ambient Thermal Resistance | RMS On-State Current - (A) | Maximum Junction Case Thermal Resistance | Typical Input Capacitance - (pF) | Typical Gate Charge @ 10V - (nC) | Maximum Power Dissipation - (mW) | Maximum Collector-Emitter Saturation Voltage - (V) | Typical Output Capacitance - (pF) | Typical Input Capacitance @ Vds - (pF) | Maximum Output Power - (W) | Typical Power Gain - (dB) | Typical 3rd Order Intercept Point - (dBm) | Maximum Transition Frequency - (MHz) | Maximum Noise Figure - (dB) | Maximum Turn-On Time - (ns) | Typical Drain-Source Resistance @ 25°C - (mOhm) | Process Technology | Packaging | Pin Count | Supplier Package | Standard Package Name | CECC Qualified | ESD Protection | Military | AEC Qualified | AEC Qualified Number | Auto motive | P PAP | ECCN Code | SVHC | SVHC Exceeds Threshold |
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TPN8R903NL,LQ(S
Trans MOSFET N-CH Si 30V 37A 8-Pin TSON Advance T/R
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Bestand
375
Von 0,1867 € bis 0,3014 €
pro Stück
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single Quad Drain Triple Source | Enhancement | 1 | 30 | ±20 | 2.3 | 37 | 8.9@10V | 4.4@4.5V|9.8@10V | 9.8 | 22000 | 630@15V | U-MOS VIII-H | Tape and Reel | 8 | TSON Advance | SON | No | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TPN2R703NL,L1Q
Trans MOSFET N-CH 30V 90A 8-Pin TSON EP Advance T/R
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Bestand
25.000
0,2735 €
pro Stück
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Toshiba | MOSFETs | Power MOSFET | N | Single Quad Drain Triple Source | Enhancement | 1 | 30 | ±20 | 2.3 | 90 | 2.7@10V | 21@10V|9.5@4.5V | 21 | 1900 | 1600@15V | Tape and Reel | 8 | TSON EP Advance | SON | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
RN2310,LF(B
Trans Digital BJT PNP 50V 0.1A 100mW 3-Pin USM T/R
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Bestand
6.000
0,0122 €
pro Stück
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Toshiba | Digital-BJT | PNP | Single | 50 | 4.7 | 0.1 | 120@1mA@5V | 100 | 0.3@0.25mA@5mA | Tape and Reel | 3 | USM | No | No | No | No | 5A991 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
HN2D02FU,LXGF(T
Diode Switching 85V 0.08A 6-Pin US T/R Automotive AEC-Q101
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Bestand
2.975
Von 0,0869 € bis 0,2276 €
pro Stück
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Toshiba | Gleichrichter | Switching Diode | Triple Parallel | 85 | 0.08 | 1 | 1.2@0.1A | 0.5 | 4 | 200 | Tape and Reel | 6 | US | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TJ15P04M3,RQ(S
Trans MOSFET P-CH Si 40V 15A 3-Pin(2+Tab) DPAK T/R
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Bestand
2.839
Von 0,522 € bis 1,0336 €
pro Stück
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Toshiba | MOSFETs | Power MOSFET | Si | P | Single | Enhancement | 1 | 40 | ±20 | 2 | 15 | 36@10V | 26@10V | 26 | 29000 | 1100@10V | Tape and Reel | 3 | DPAK | TO | No | No | No | No | No | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SC3326-B,LF
Trans GP BJT NPN 20V 0.3A 150mW 3-Pin S-Mini T/R Automotive AEC-Q101
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Bestand
10
Von 0,0188 € bis 0,1334 €
pro Stück
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Toshiba | GP BJT | NPN | Bipolar Small Signal | Si | Single | 20 | 1 | 50 | 25 | 0.3 | 300 to 500 | 350@4mA@2V | 150 | 0.1@3mA@30mA | 4.8 | 160(Typ) | Tape and Reel | 3 | S-Mini | SOT | No | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SSM6N39TU,LF(T
Trans MOSFET N-CH Si 20V 1.6A Automotive AEC-Q101 6-Pin UF T/R
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Bestand
2.526
Von 0,1138 € bis 0,218 €
pro Stück
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Toshiba | MOSFETs | Small Signal | Si | N | Dual | Enhancement | 2 | 20 | ±10 | 1.6 | 119@4V | 7.5@4V | 500 | 260@10V | Tape and Reel | 6 | UF | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RN2110,LXGF(CT Transistor Silicon NPN Epitaxial PCT Process |
Bestand
3.000
Von 0,0346 € bis 0,1086 €
pro Stück
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Toshiba | Digital-BJT | 3 | SSM | No | No | No | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
CMZ43(T2L,TEM,Q)
Diode Zener Single 43V 10% 2000mW 2-Pin M-FLAT T/R
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Bestand
18
0,1068 €
pro Stück
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Toshiba | Zener | Voltage Regulator | Single | 43 | 10% | 7 | 10 | 40 | 2000 | Tape and Reel | 2 | M-FLAT | No | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TK2R4A08QM,S4X
Trans MOSFET N-CH Si 80V 100A 3-Pin(3+Tab) TO-220SIS Tube
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Bestand
113
1,0283 €
pro Stück
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 80 | ±20 | 3.5 | 100 | 2.44@10V | 102@6V|179@10V | 179 | 47000 | 13000@40V | Tube | 3 | TO-220SIS | TO | No | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
1SV279,H3F(T
Varactor Diode Single 15V 14pF 2-Pin ESC T/R
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Bestand
7.932
Von 0,085 € bis 0,2223 €
pro Stück
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Toshiba | Varaktors | VCO | UHF|VHF | Single | 15 | 0.003 | 2 | 2V/10V | 14@2V | Tape and Reel | 2 | ESC | SOD | No | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SA2097(TE16L1,NQ)
Trans GP BJT PNP 50V 5A 1000mW 3-Pin(2+Tab) New PW-Mold T/R
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Bestand
1.643
Von 0,3274 € bis 1,0336 €
pro Stück
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Toshiba | GP BJT | PNP | Bipolar Power | Si | Single | 50 | 1 | 50 | 7 | 1.1@53mA@1.6A | 5 | 50 to 120|120 to 200|200 to 300 | 200@0.5A@2V|100@1.6A@2V | 1000 | 0.27@53mA@1.6A | Tape and Reel | 3 | New PW-Mold | TO | No | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TPH11006NL,LQ
Trans MOSFET N-CH Si 60V 40A 8-Pin SOP Advance T/R
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Bestand
1.883
Von 0,295 € bis 0,3251 €
pro Stück
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single Quad Drain Triple Source | Enhancement | 1 | 60 | ±20 | 40 | 11.4@10V | 11.2@4.5V|23@10V | 23 | 2800 | 2000@30V | Tape and Reel | 8 | SOP Advance | SO | No | No | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RN1105MFV,L3F(CT Transistor Silicon NPN Epitaxial PCT Process Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications |
Bestand
49
0,0832 €
pro Stück
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Toshiba | Digital-BJT | 3 | VESM | SOT | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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HN1C01FUGRLFT
Trans GP BJT NPN 50V 0.15A 200mW 6-Pin US T/R
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Bestand
1.050
Von 0,0294 € bis 0,0624 €
pro Stück
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Toshiba | GP BJT | NPN | Bipolar Small Signal | Si | Dual | 50 | 2 | 60 | 5 | 0.15 | 200 to 300 | 200@2mA@6V | 200 | 0.25@10mA@100mA | Tape and Reel | 6 | US | No | Unknown | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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TPH1R306P1,L1Q(M
Trans MOSFET N-CH Si 60V 100A 8-Pin SOP Advance
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Bestand
1.087
Von 0,8459 € bis 1,9716 €
pro Stück
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single Quad Drain Triple Source | Enhancement | 1 | 60 | ±20 | 100 | 1.28@10V | 44@4.5V|91@10V | 3000 | 6250@30V | 8 | SOP Advance | SO | No | No | No | No | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TPC8067-H,LQ(S
Trans MOSFET N-CH Si 30V 9A 8-Pin SOP T/R
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Bestand
2.389
0,1846 €
pro Stück
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single Quad Drain Triple Source | Enhancement | 1 | 30 | ±20 | 9 | 25@10V | 4.7@5V|9.5@10V | 9.5 | 1900 | 690@10V | Tape and Reel | 8 | SOP | SO | No | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TK17A25D,S4X(S
Trans MOSFET N-CH Si 250V 17A 3-Pin(3+Tab) TO-220SIS
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Bestand
40
Von 0,5941 € bis 0,8859 €
pro Stück
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 250 | ±20 | 3.5 | 17 | 150@10V | 43@10V | 43 | 45000 | 1650@100V | 3 | TO-220SIS | TO | No | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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RN2302,LF(T
Trans Digital BJT PNP 50V 0.1A 100mW 3-Pin USM T/R Automotive AEC-Q101
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Bestand
2.062
Von 0,0322 € bis 0,0684 €
pro Stück
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Toshiba | Digital-BJT | PNP | Single | 50 | 10 | 1 | 0.1 | 50@10mA@5V | 100 | 0.3@0.25mA@5mA | Tape and Reel | 3 | USM | No | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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TK8A60W,S4VX(M
Trans MOSFET N-CH Si 600V 8A 3-Pin(3+Tab) TO-220SIS Magazine
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Bestand
50
Von 0,773 € bis 1,7371 €
pro Stück
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 600 | ±30 | 3.7 | 8 | 500@10V | 18.5@10V | 18.5 | 30000 | 570@300V | Magazine | 3 | TO-220SIS | TO | No | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SC5692(TE85L,F)
Trans GP BJT NPN 50V 2.5A 625mW 3-Pin TSM T/R
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Bestand
1.179
Von 0,0999 € bis 0,2762 €
pro Stück
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Toshiba | GP BJT | NPN | Bipolar Power | Si | Single | 50 | 1 | 100 | 7 | 1.1@20mA@1A | 2.5 | 200 to 300|300 to 500 | 200@1A@2V|400@0.3A@2V | 625 | 0.14@20mA@1A | Tape and Reel | 3 | TSM | SOT | No | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SSM6N24TU,LF(T
Trans MOSFET N-CH Si 30V 0.5A Automotive AEC-Q101 6-Pin UF T/R
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Bestand
3.400
Von 0,1537 € bis 0,2944 €
pro Stück
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Toshiba | MOSFETs | Small Signal | Si | N | Dual | Enhancement | 2 | 30 | ±12 | 0.5 | 145@4.5V | 500 | 245@10V | Tape and Reel | 6 | UF | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
CRZ16(TE85L,Q,M)
Zener Diode Single 16V 10% 30Ohm 700mW 2-Pin S-FLAT T/R
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Bestand
2.060
Von 0,1233 € bis 0,3231 €
pro Stück
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Toshiba | Zener | Voltage Regulator | Single | 16 | 10% | 10 | 10 | 30 | 700 | 700 | Tape and Reel | 2 | S-FLAT | No | Unknown | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TPCP8507(TE85L,F)
Trans GP BJT NPN 120V 1A 8-Pin PS T/R
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Bestand
2.690
Von 0,1086 € bis 0,2076 €
pro Stück
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Toshiba | GP BJT | NPN | Single | 120 | 1 | 1 | 300 to 500 | 300(Max) | Tape and Reel | 8 | PS | No | No | No | No | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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TPN19008QM,LQ
Trans MOSFET N-CH Si 80V 34A 8-Pin TSON EP Advance T/R
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Bestand
222
0,1568 €
pro Stück
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single Quad Drain Triple Source | Enhancement | 1 | 80 | ±20 | 34 | 19@10V | 9.7@6V|16@10V | 2670 | 1020@40V | Tape and Reel | 8 | TSON EP Advance | SON | No | No | No | No | EAR99 |