Toshiba Diodes, Transistors and Thyristors
| Teile-Nr. | Preis | Bestand | Hersteller | Kategorie | Type | Maximum Rate of Rise of Off-State Voltage - (V/us) | Category | Surge Current Rating - (A) | Material | Configuration | Channel Type | Maximum Reverse Voltage - (V) | Maximum Rate of Rise of On-State Current - (A/us) | Channel Mode | Typical Zener Voltage - (V) | Peak Reverse Repetitive Voltage - (V) | Maximum Gate Trigger Voltage - (V) | Maximum Gate Emitter Voltage - (V) | Maximum Collector-Emitter Voltage - (V) | Zener Voltage Tolerance | Maximum Reverse Current - (uA) | Maximum Gate Trigger Current - (mA) | Maximum Continuous Forward Current - (A) | Maximum Collector-Base Voltage - (V) | Repetitive Peak Forward Blocking Voltage - (V) | Number of Elements per Chip | Minimum Tuning Ratio | Maximum Holding Current - (mA) | Maximum Drain-Gate Voltage - (V) | Maximum Continuous DC Collector Current - (A) | Typical Input Resistance - (kOhm) | Tuning Ratio Test Condition | Test Current - (mA) | Peak Non-Repetitive Forward Surge Current - (A) | Maximum Series Resistance @ Maximum IF - (Ohm) | Maximum Forward Voltage - (V) | Maximum Drain-Source Voltage - (V) | Maximum Base-Emitter Voltage - (V) | Maximum Base-Emitter Saturation Voltage - (V) | Typical Resistor Ratio | Repetitive Peak Reverse Voltage - (V) | Peak Reverse Current - (uA) | Maximum Reverse Leakage Current - (uA) | Maximum Gate Peak Inverse Voltage - (V) | Maximum Gate-Source Voltage - (V) | Maximum DC Collector Current - (A) | Peak On-State Voltage - (V) | Operational Bias Conditions | Minimum Diode Capacitance - (pF) | Maximum Gate Threshold Voltage - (V) | Minimum DC Current Gain | Maximum Zener Impedance - (Ohm) | Maximum Power Dissipation @ 25C - (mW) | Maximum Diode Capacitance - (pF) | Maximum Continuous Drain Current - (A) | Rated Average On-State Current - (A) | Peak Reverse Recovery Time - (ns) | Minimum DC Current Gain Range | Typical Gate Charge @ Vgs - (nC) | RMS On-State Current - (A) | Repetitive Peak Off-State Current - (mA) | Maximum Junction Ambient Thermal Resistance | Frequency Band | Maximum Junction Case Thermal Resistance | Typical Input Capacitance - (pF) | Typical Gate Charge @ 10V - (nC) | Maximum Transition Frequency - (MHz) | Maximum Collector-Emitter Saturation Voltage - (V) | Typical Input Capacitance @ Vds - (pF) | Maximum Output Power - (W) | Typical Output Capacitance - (pF) | Maximum Power Dissipation - (mW) | Maximum Frequency - (MHz) | Maximum Drain-Source Resistance - (Ohm) | Typical Power Gain - (dB) | Typical 3rd Order Intercept Point - (dBm) | Maximum Noise Figure - (dB) | Maximum Turn-On Time - (ns) | Typical Drain-Source Resistance @ 25°C - (mOhm) | Process Technology | Packaging | Pin Count | Supplier Package | Standard Package Name | CECC Qualified | ESD Protection | Military | AEC Qualified | AEC Qualified Number | Auto motive | P PAP | ECCN Code | SVHC | SVHC Exceeds Threshold |
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TPH1400ANH,L1Q
Trans MOSFET N-CH Si 100V 42A 8-Pin SOP Advance T/R
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Von 0,5364 € bis 0,5813 €
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Toshiba | MOSFETs | Power MOSFET | Si | Single Quad Drain Triple Source | N | Enhancement | 1 | 100 | ±20 | 4 | 42 | 22@10V | 22 | 1440@50V | 2800 | 13.6@10V | Tape and Reel | 8 | SOP Advance | SO | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
HN1D01FU(TE85L,F)
Diode Switching 85V 0.1A 6-Pin US T/R
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Toshiba | Gleichrichter | Switching Diode | Double Dual Common Anode | 85 | 0.1 | 2 | 1.2 | 0.5 | 4 | 200 | Tape and Reel | 6 | US | No | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
1SS370(TE85L,F)
Diode Switching 250V 0.1A 3-Pin USM T/R
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Toshiba | Gleichrichter | Switching Diode | Single | 250 | 0.1 | 2 | 1.2 | 1 | 60 | 100 | Tape and Reel | 3 | USM | No | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MT3S111TU,LF(B VHF-UHF Low-Noise, Low-Distortion Amplifier Application |
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Toshiba | HF-BJT | 3 | UFM | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TK62N60W5,S1VF
Trans MOSFET N-CH Si 600V 61.8A 3-Pin(3+Tab) TO-247 Magazine
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Von 7,7597 € bis 8,4949 €
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Toshiba | MOSFETs | Power MOSFET | Si | Single | N | Enhancement | 1 | 600 | ±30 | 61.8 | 205@10V | 6500@300V | 400000 | 45@10V | Magazine | 3 | TO-247 | TO | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SSM14N956L,EFF
Trans MOSFET N-CH Si 14-Pin TCSPED T/R
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Von 0,5001 € bis 0,542 €
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Toshiba | MOSFETs | Power MOSFET | Si | Dual Common Drain Hex Source | N | Enhancement | 2 | ±8 | 76@4V | 2440 | Tape and Reel | 14 | TCSPED | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TK31J60W5,S1VQ
Trans MOSFET N-CH Si 600V 30.8A 3-Pin(3+Tab) TO-3PN Bag/Tube
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Von 4,7111 € bis 5,1059 €
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Toshiba | MOSFETs | Power MOSFET | Si | Single | N | Enhancement | 1 | 600 | ±30 | 4.5 | 30.8 | 105@10V | 105 | 3000@300V | 230000 | 99@10V | Tube|Bag | 3 | TO-3PN | TO | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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HN3C10FU(TE85L,F)
Trans RF BJT NPN 12V 0.08A 6-Pin US T/R
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Toshiba | HF-BJT | NPN | Si | Dual | 12 | 20 | 2 | 3 | 0.08 | 10V/20mA | 80@20mA@10V | 50 to 120 | 7000(Typ) | 200 | 11.5 | 2 | Tape and Reel | 6 | US | No | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
CRG01(T5L,TEMQ)
Diode Si 100V 0.7A 2-Pin S-FLAT T/R
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Toshiba | Gleichrichter | Si | Single | 100 | 0.7 | 16.5 | 1.1 | 10 | Tape and Reel | 2 | S-FLAT | No | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SSM3K56ACT,L3F(T
Trans MOSFET N-CH 20V 1.4A 3-Pin CST T/R
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Toshiba | MOSFETs | Small Signal | Single | N | Enhancement | 1 | 20 | ±8 | 1 | 1.4 | 1@4.5V | 55@10V | 500 | 235@4.5V | Tape and Reel | 3 | CST | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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2SA1587-BL(TE85L,F
Trans GP BJT PNP 120V 0.1A 100mW 3-Pin USM T/R
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Toshiba | GP BJT | PNP | Bipolar Small Signal | Si | Single | 120 | 120 | 1 | 5 | 0.1 | 350@2mA@6V | 300 to 500 | 0.3@1mA@10mA | 100 | 10 | Tape and Reel | 3 | USM | No | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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2SC5198-R(Q)
Trans GP BJT NPN 140V 10A 100000mW 3-Pin(3+Tab) TO-3PN
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Toshiba | GP BJT | NPN | Bipolar Power | Si | Single | 140 | 140 | 1 | 5 | 10 | 55@1A@5V | 50 to 120 | 2@0.7A@7A | 100000 | 3 | TO-3PN | TO | No | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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RN2306(TE85L,F)
Trans Digital BJT PNP 50V 0.1A 100mW 3-Pin USM T/R Automotive AEC-Q101
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Toshiba | Digital-BJT | PNP | Single | 50 | 0.1 | 4.7 | 0.1 | 80@10mA@5V | 0.3@0.25mA@5mA | 100 | Tape and Reel | 3 | USM | No | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
JDV2S41FS(TPL3)
Diode VAR Cap Single 15V 14pF 2-Pin fSC T/R
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Toshiba | Varaktors | Tuner|VCO | Single | 15 | 0.003 | 2 | 2V/10V | 14@2V | UHF|VHF | Tape and Reel | 2 | fSC | No | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SC3324GRTE85LF
Trans GP BJT NPN 120V 0.1A 150mW 3-Pin S-Mini T/R
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Toshiba | GP BJT | NPN | Bipolar Small Signal | Si | Single | 120 | 120 | 1 | 5 | 0.1 | 200@2mA@6V | 200 to 300 | 0.3@1mA@10mA | 3 | 150 | 6 | Tape and Reel | 3 | S-Mini | SOT | No | Unknown | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TK22A65X,S5X
Trans MOSFET N-CH Si 650V 22A 3-Pin(3+Tab) TO-220SIS Tube
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Von 1,7809 € bis 1,9678 €
pro Stück
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Toshiba | MOSFETs | Power MOSFET | Si | Single | N | Enhancement | 1 | 650 | ±30 | 22 | 50@10V | 2400@300V | 45000 | 150@10V | Tube | 3 | TO-220SIS | TO | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| U1JC44(TE12L,Q) Diode 600V 0.9A 2-Pin I-FLAT T/R |
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Toshiba | Gleichrichter | Single | 600 | 0.9 | 33 | 1.2@1A | 10 | Tape and Reel | 2 | I-FLAT | No | No | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SC5096-O(TE85L,F)
Trans RF BJT NPN 10V 0.015A 100mW 3-Pin SSM T/R
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Toshiba | HF-BJT | NPN | Si | Single | 10 | 20 | 1 | 1.5 | 0.015 | 6V/7mA | 80@7mA@6V | 50 to 120 | 10000(Typ) | 0.5 | 100 | Tape and Reel | 3 | SSM | No | No | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SSM3K357R,LF(T
Trans MOSFET N-CH Si 60V 0.65A 3-Pin SOT-23F T/R
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Toshiba | MOSFETs | Power MOSFET | Si | Single | N | Enhancement | 1 | 60 | ±12 | 0.65 | 1.5@5V | 43@12V | 1500 | 1800@5V | 3 | SOT-23F | SOT | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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2SJ344(TE85L,F)
Trans MOSFET P-CH Si 50V 0.05A 3-Pin USM T/R
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Toshiba | MOSFETs | Small Signal | Si | Single | P | Enhancement | 1 | 50 | -7 | 0.05 | 10.5@5V | 100 | 50000@4V | Tape and Reel | 3 | USM | No | No | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SSM3J66MFV,L3F
Trans MOSFET P-CH Si 20V 0.8A 3-Pin VESM T/R Automotive AEC-Q101
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Von 0,047 € bis 0,0514 €
pro Stück
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Toshiba | MOSFETs | Small Signal | Si | Single | P | Enhancement | 1 | 20 | 6 | 0.8 | 1.6@4.5V | 100@10V | 800 | 390@4.5V | Tape and Reel | 3 | VESM | SOT | No | Yes | AEC-Q101 | Yes | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SSM6K809R,LF
Trans MOSFET N-CH Si 60V 6A 6-Pin TSOP-F T/R Automotive AEC-Q101
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Toshiba | MOSFETs | Power MOSFET | Si | Single Quad Drain | N | Enhancement | 1 | 60 | ±20 | 6 | 9.3@10V | 9.3 | 550@10V | 3000 | 36@10V | Tape and Reel | 6 | TSOP-F | SO | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TK040Z65Z,S1F(O Trans MOSFET N-CH Si 650V 57A 4-Pin(4+Tab) TO-247 |
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Toshiba | MOSFETs | Power MOSFET | Si | Single Dual Drain | N | Enhancement | 1 | 650 | ±30 | 57 | 105@10V | 6250@300V | 360000 | 40@10V | 4 | TO-247 | TO | No | No | No | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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TK13A60D(STA4,Q,M)
Trans MOSFET N-CH Si 600V 13A 3-Pin(3+Tab) TO-220SIS
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Toshiba | MOSFETs | Power MOSFET | Si | Single | N | Enhancement | 1 | 600 | ±30 | 13 | 40@10V | 40 | 2300@25V | 50000 | 430@10V | 3 | TO-220SIS | TO | No | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SD1224(Q)
Trans Darlington NPN 30V 1.5A
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Toshiba | Darlington BJT | NPN | Single | 30 | 1 | 1.5 | 2.2@1mA@1A | 4000@150mA@2V | 3 | New PW-Mold | TO | No | No | No | No | No |