Toshiba Diodes, Transistors and Thyristors
| Teile-Nr. | Preis | Bestand | Hersteller | Kategorie | Type | Maximum Rate of Rise of Off-State Voltage - (V/us) | Category | Surge Current Rating - (A) | Material | Configuration | Channel Type | Maximum Reverse Voltage - (V) | Maximum Rate of Rise of On-State Current - (A/us) | Channel Mode | Typical Zener Voltage - (V) | Peak Reverse Repetitive Voltage - (V) | Maximum Gate Trigger Voltage - (V) | Maximum Gate Emitter Voltage - (V) | Maximum Collector-Emitter Voltage - (V) | Zener Voltage Tolerance | Maximum Reverse Current - (uA) | Maximum Gate Trigger Current - (mA) | Maximum Continuous Forward Current - (A) | Maximum Collector-Base Voltage - (V) | Repetitive Peak Forward Blocking Voltage - (V) | Number of Elements per Chip | Minimum Tuning Ratio | Maximum Holding Current - (mA) | Maximum Drain-Gate Voltage - (V) | Maximum Continuous DC Collector Current - (A) | Typical Input Resistance - (kOhm) | Tuning Ratio Test Condition | Test Current - (mA) | Peak Non-Repetitive Forward Surge Current - (A) | Maximum Series Resistance @ Maximum IF - (Ohm) | Maximum Forward Voltage - (V) | Maximum Drain-Source Voltage - (V) | Maximum Base-Emitter Voltage - (V) | Maximum Base-Emitter Saturation Voltage - (V) | Typical Resistor Ratio | Repetitive Peak Reverse Voltage - (V) | Peak Reverse Current - (uA) | Maximum Reverse Leakage Current - (uA) | Maximum Gate Peak Inverse Voltage - (V) | Maximum Gate-Source Voltage - (V) | Maximum DC Collector Current - (A) | Peak On-State Voltage - (V) | Operational Bias Conditions | Minimum Diode Capacitance - (pF) | Maximum Gate Threshold Voltage - (V) | Minimum DC Current Gain | Maximum Zener Impedance - (Ohm) | Maximum Power Dissipation @ 25C - (mW) | Maximum Diode Capacitance - (pF) | Maximum Continuous Drain Current - (A) | Rated Average On-State Current - (A) | Peak Reverse Recovery Time - (ns) | Minimum DC Current Gain Range | Typical Gate Charge @ Vgs - (nC) | RMS On-State Current - (A) | Repetitive Peak Off-State Current - (mA) | Maximum Junction Ambient Thermal Resistance | Frequency Band | Maximum Junction Case Thermal Resistance | Typical Input Capacitance - (pF) | Typical Gate Charge @ 10V - (nC) | Maximum Transition Frequency - (MHz) | Maximum Collector-Emitter Saturation Voltage - (V) | Typical Input Capacitance @ Vds - (pF) | Maximum Output Power - (W) | Typical Output Capacitance - (pF) | Maximum Power Dissipation - (mW) | Maximum Frequency - (MHz) | Maximum Drain-Source Resistance - (Ohm) | Typical Power Gain - (dB) | Typical 3rd Order Intercept Point - (dBm) | Maximum Noise Figure - (dB) | Maximum Turn-On Time - (ns) | Typical Drain-Source Resistance @ 25°C - (mOhm) | Process Technology | Packaging | Pin Count | Supplier Package | Standard Package Name | CECC Qualified | ESD Protection | Military | AEC Qualified | AEC Qualified Number | Auto motive | P PAP | ECCN Code | SVHC | SVHC Exceeds Threshold |
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SSM3K16CT,L3F(T
Trans MOSFET N-CH Si 20V 0.1A 3-Pin CST T/R
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Bestand
10.000
0,0253 €
pro Stück
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Toshiba | MOSFETs | Small Signal | Si | Single | N | Enhancement | 1 | 20 | ±10 | 0.1 | 9.3@3V | 100 | 3000@4V | Tape and Reel | 3 | CST | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TK100A10N1,S4X(S
Trans MOSFET N-CH Si 100V 207A 3-Pin(3+Tab) TO-220SIS Magazine
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Toshiba | MOSFETs | Power MOSFET | Si | Single | N | Enhancement | 1 | 100 | ±20 | 4 | 207 | 140@10V | 140 | 8800@50V | 45000 | 3.8@10V | Magazine | 3 | TO-220SIS | TO | No | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TK25S06N1L,LXHQ(O Trans MOSFET N-CH Si 60V 25A 3-Pin(2+Tab) DPAK+ T/R |
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Toshiba | MOSFETs | Power MOSFET | Si | Single | N | Enhancement | 1 | 60 | ±20 | 25 | 15@10V | 855@10V | 57000 | 18.5@10V | 3 | DPAK+ | TO | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
RN2405(TE85L,F)
Trans Digital BJT PNP 50V 0.1A 200mW 3-Pin S-Mini T/R
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Toshiba | Digital-BJT | PNP | Single | 50 | 0.1 | 2.2 | 0.0468 | 80@10mA@5V | 50 to 120 | 0.3@0.25mA@5mA | 200 | Tape and Reel | 3 | S-Mini | SOT | No | Unknown | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SC2703-Y(F)
Trans GP BJT NPN 30V 1A 900mW 3-Pin TO-92 Mod
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Toshiba | GP BJT | NPN | Bipolar Small Signal | Si | Single | 30 | 30 | 1 | 5 | 1 | 160@100mA@2V | 120 to 200 | 0.5@80mA@800mA | 900 | 3 | TO-92 Mod | TO | No | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
GT5G131(TE12L,Q)
Trans IGBT Chip N-CH 400V 50A 1.1W 8-Pin SOP T/R
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Toshiba | IGBT-Chip | Single Quad Collector Triple Emitter | N | ±6 | 400 | 50 | 1.1 | Tape and Reel | 8 | SOP | SO | No | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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TPC8128(TE12L,Q)
Trans MOSFET P-CH Si 30V 16A 8-Pin SOP T/R
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Toshiba | MOSFETs | Power MOSFET | Si | Single Quad Drain Triple Source | P | Enhancement | 1 | 30 | 30 | 2 | 16 | 115@10V | 115 | 4800@10V | 1900 | 5@10V | Tape and Reel | 8 | SOP | SO | No | Unknown | No | No | No | No | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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TK25A60X,S5X(M
Trans MOSFET N-CH Si 600V 25A 3-Pin(3+Tab) TO-220SIS Tube
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Toshiba | MOSFETs | Power MOSFET | Si | Single | N | Enhancement | 1 | 600 | ±30 | 3.5 | 25 | 40@10V | 40 | 2400@300V | 45000 | 125@10V | Tube | 3 | TO-220SIS | TO | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SSM3K15ACT,L3F(B
Trans MOSFET N-CH Si 30V 0.1A 3-Pin CST
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Toshiba | MOSFETs | Small Signal | Si | Single | N | Enhancement | 1 | 30 | ±20 | 0.1 | 13.5@3V | 100 | 3600@4V | 3 | CST | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MKZ24V,LM
Zener Diode Silicon Epitaxial Planar
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Von 0,0192 € bis 0,0209 €
pro Stück
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Toshiba | Zener | 3 | SOT-23 | SOT | No | No | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TDTA114Y,LM Silicon PNP Epitaxial Digital Transistor |
Von 0,0164 € bis 0,018 €
pro Stück
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Toshiba | Digital-BJT | Tape and Reel | 3 | SOT-23 | SOT | No | No | No | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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TK5A90E,S4X
Trans MOSFET N-CH Si 900V 4.5A 3-Pin(3+Tab) TO-220SIS Tube
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Von 0,6417 € bis 0,6954 €
pro Stück
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Toshiba | MOSFETs | Power MOSFET | Si | Single | N | Enhancement | 1 | 900 | ±30 | 4 | 4.5 | 20@10V | 20 | 950@25V | 40000 | 3100@10V | 2500@10V | Tube | 3 | TO-220SIS | TO | No | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
CRS11(TE85L,Q)
Diode Schottky 30V 1A 2-Pin S-FLAT T/R
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Toshiba | Gleichrichter | Schottky Diode | Single | 30 | 1 | 20 | 0.36 | 1500 | Tape and Reel | 2 | S-FLAT | No | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SC5176(TP,Q) Trans GP BJT NPN 80V 5A 1800mW 3-Pin TPL T/R |
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Toshiba | GP BJT | NPN | Bipolar Power | Si | Single | 80 | 100 | 1 | 7 | 1.2@0.15A@3A | 5 | 40@3A@1V|70@1A@1V | 30 to 50|50 to 120 | 0.4@0.15A@3A | 1800 | Tape and Reel | 3 | TPL | SIP | No | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SSM6J414TU,LF
Trans MOSFET P-CH Si 20V 6A 6-Pin UF T/R
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Von 0,1096 € bis 0,1198 €
pro Stück
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Toshiba | MOSFETs | Power MOSFET | Si | Single Quad Drain | P | Enhancement | 1 | 20 | ±8 | 1 | 6 | 23.1@4.5V | 1650@10V | 1000 | 22.5@4.5V | Tape and Reel | 6 | UF | No | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
1SV284(TPH3,F)
Varactor Diode Single 10V 15pF 2-Pin ESC T/R
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Toshiba | Varaktors | VCO | Single | 10 | 0.003 | 1.8 | 1V/4V | 15@1V | UHF|VHF | Tape and Reel | 2 | ESC | SOD | No | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TK33S10N1Z,LXHQ
Trans MOSFET N-CH Si 100V 33A 3-Pin(2+Tab) DPAK+ T/R Automotive AEC-Q101
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Toshiba | MOSFETs | Power MOSFET | Si | Single | N | Enhancement | 1 | 100 | ±20 | 4 | 33 | 28@10V | 28 | 2050@10V | 125000 | 9.7@10V | Tape and Reel | 3 | DPAK+ | TO | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SC4116-Y,LF(B
Trans GP BJT NPN 50V 0.15A 100mW 3-Pin USM
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Toshiba | GP BJT | NPN | Bipolar Small Signal | Si | Single | 50 | 60 | 1 | 5 | 0.15 | 120@2mA@6V | 120 to 200 | 80 | 0.25@10mA@100mA | 100 | 3 | USM | No | No | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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2SC2073A(F)
Trans GP BJT NPN 150V 1.5A 2000mW 3-Pin(3+Tab) TO-220NIS
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Toshiba | GP BJT | NPN | Bipolar Power | Si | Single | 150 | 150 | 1 | 5 | 1.5 | 40@500mA@10V | 30 to 50 | 1.5@50mA@500mA | 2000 | 3 | TO-220NIS | TO | No | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SSM6K407TU,LF(B Field-Effect Transistor Silicon N-Channel MOS Type |
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Toshiba | MOSFETs | 6 | UF | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
1SV262(TPH2,F)
Varactor Diode Single 34V 33pF 2-Pin USC T/R
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Toshiba | Varaktors | Tuner | Single | 34(Min) | 0.01 | 12 | 2V/25V | 33@2V | Tape and Reel | 2 | USC | SOD | No | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TRS20N65D,S1F
Diode Schottky SiC 650V 20A 3-Pin(3+Tab) TO-247
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Toshiba | Gleichrichter | Schottky Diode | SiC | Dual Common Cathode | 650 | 20 | 1.7 | 90 | 3 | TO-247 | TO | No | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SSM3K7002CFU,LF
Trans MOSFET N-CH Si 60V 0.17A 3-Pin USM T/R
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Von 0,0125 € bis 0,0136 €
pro Stück
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Toshiba | MOSFETs | Small Signal | Si | Single | N | Enhancement | 1 | 60 | ±20 | 2.1 | 0.17 | 0.27@4.5V | 11@10V | 700 | 3900@10V | Tape and Reel | 3 | USM | No | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TK20S04K3L(T6L1,NQ
Trans MOSFET N-CH Si 40V 20A 3-Pin(2+Tab) DPAK+ T/R Automotive AEC-Q101
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Toshiba | MOSFETs | Power MOSFET | Si | Single | N | Enhancement | 1 | 40 | ±20 | 20 | 18@10V | 18 | 820@10V | 38000 | 14@10V | Tape and Reel | 3 | DPAK+ | TO | No | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SK790
Trans MOSFET N-CH Si 500V 15A 3-Pin(3+Tab) TO-3P
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Toshiba | MOSFETs | Power MOSFET | Si | Single | N | Enhancement | 1 | 500 | ±20 | 15 | 87@10V | 87 | 2300@10V | 150000 | 400@10V | 3 | TO-3P | TO | No | No | No | No | No | EAR99 |