Toshiba Diodes, Transistors and Thyristors
| Teile-Nr. | Preis | Bestand | Hersteller | Kategorie | Type | Category | Maximum Rate of Rise of On-State Current - (A/us) | Maximum Rate of Rise of Off-State Voltage - (V/us) | Material | Frequency Band | Channel Type | Repetitive Peak Off-State Current - (mA) | Configuration | Channel Mode | Typical Zener Voltage - (V) | Peak Reverse Repetitive Voltage - (V) | Maximum Reverse Voltage - (V) | Maximum Gate Trigger Voltage - (V) | Maximum Gate Emitter Voltage - (V) | Maximum Collector-Emitter Voltage - (V) | Zener Voltage Tolerance | Surge Current Rating - (A) | Number of Elements per Chip | Maximum Reverse Current - (uA) | Maximum Gate Trigger Current - (mA) | Maximum Continuous Forward Current - (mA) | Maximum Collector-Base Voltage - (V) | Minimum Tuning Ratio | Maximum Holding Current - (mA) | Maximum Drain-Gate Voltage - (V) | Maximum Base-Emitter Voltage - (V) | Typical Input Resistance - (kOhm) | Tuning Ratio Test Condition | Test Current - (mA) | Peak Non-Repetitive Forward Surge Current - (A) | Maximum Series Resistance @ Maximum IF - (Ohm) | Maximum Forward Voltage - (V) | Maximum Drain-Source Voltage - (V) | Maximum Base-Emitter Saturation Voltage - (V) | Typical Resistor Ratio | Repetitive Peak Reverse Voltage - (V) | Peak Reverse Current - (uA) | Maximum Reverse Leakage Current - (uA) | Maximum Gate-Source Voltage - (V) | Maximum DC Collector Current - (A) | Maximum Continuous DC Collector Current - (A) | Operational Bias Conditions | Minimum Diode Capacitance - (pF) | Maximum Gate Threshold Voltage - (V) | Maximum Gate Peak Inverse Voltage - (V) | Peak On-State Voltage - (V) | Maximum Zener Impedance - (Ohm) | Maximum Power Dissipation @ 25C - (mW) | Maximum Diode Capacitance - (pF) | Maximum Continuous Drain Current - (A) | Repetitive Peak Forward Blocking Voltage - (V) | Peak Reverse Recovery Time - (ns) | Minimum DC Current Gain Range | Minimum DC Current Gain | Maximum Drain-Source Resistance - (mOhm) | Typical Gate Charge @ Vgs - (nC) | Rated Average On-State Current - (A) | Maximum Junction Ambient Thermal Resistance | RMS On-State Current - (A) | Maximum Junction Case Thermal Resistance | Typical Input Capacitance - (pF) | Typical Gate Charge @ 10V - (nC) | Maximum Power Dissipation - (mW) | Maximum Collector-Emitter Saturation Voltage - (V) | Typical Output Capacitance - (pF) | Typical Input Capacitance @ Vds - (pF) | Maximum Output Power - (W) | Typical Power Gain - (dB) | Typical 3rd Order Intercept Point - (dBm) | Maximum Transition Frequency - (MHz) | Maximum Noise Figure - (dB) | Maximum Turn-On Time - (ns) | Typical Drain-Source Resistance @ 25°C - (mOhm) | Process Technology | Packaging | Pin Count | Supplier Package | Standard Package Name | CECC Qualified | ESD Protection | Military | AEC Qualified | AEC Qualified Number | Auto motive | P PAP | ECCN Code | SVHC | SVHC Exceeds Threshold |
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| U5ZA27CTE24LQ Zener Diode Single 27V 11% 30Ohm 5000mW 2-Pin MR T/R |
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Toshiba | Zener | Voltage Regulator | Single | 27 | 11% | 10 | 10 | 30 | 5000 | 5000 | Tape and Reel | 2 | MR | No | Unknown | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
1SS387(TPH3,F)
Diode Switching 85V 0.1A 2-Pin ESC T/R
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Toshiba | Gleichrichter | Switching Diode | Single | 85 | 0.1 | 1 | 1.2 | 0.5 | 3 | 4 | 200 | Tape and Reel | 2 | ESC | SOD | No | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SSM6N68NU,LF
Trans MOSFET N-CH Si 30V 4A Automotive AEC-Q101 6-Pin UDFN EP T/R
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Von 0,1025 € bis 0,1128 €
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Toshiba | MOSFETs | Power MOSFET | Si | N | Dual | Enhancement | 2 | 30 | 12 | 4 | 84@4.5V | 1.8@4.5V | 2000 | 129@15V | Tape and Reel | 6 | UDFN EP | DFN | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
CMZB240(TE12L,Q)
Zener Diode Single 240V 10% 5000Ohm 1000mW 2-Pin M-FLAT T/R
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Toshiba | Zener | Voltage Regulator | Single | 240 | 10% | 0.5 | 10 | 5000 | 1000 | Tape and Reel | 2 | M-FLAT | Unknown | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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CMG06(TE12L,Q,M)
Diode 600V 1A 2-Pin M-FLAT T/R Automotive AEC-Q101
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Toshiba | Gleichrichter | Single | 600 | 1 | 15 | 1.1 | 10 | Tape and Reel | 2 | M-FLAT | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
CTS521,L3F(B
Diode Small Signal Schottky 0.2A 2-Pin CST
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Toshiba | Gleichrichter | Small Signal Schottky Diode | Single | 0.2 | 1 | 0.5@0.2A | 30 | 150 | 2 | CST | SOD | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
1SV271(TPH3,F)
PIN Diode Attenuator 50V 50mA 2-Pin USC T/R
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Toshiba | PIN | Attenuator | UHF|VHF | Single | 50 | 50 | 3(Typ)@10mA | 1 | 0.4@50V | Tape and Reel | 2 | USC | SOD | No | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SD687
Trans Darlington NPN 40V 3A 25000mW 3-Pin(3+Tab) TO-220AB
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Toshiba | Darlington BJT | NPN | Single | 40 | 1 | 60 | 5 | 2@4mA@2A | 3 | 1000@3A@2V|2000@1A@2V | 25000 | 1.5@4mA@2A | 3 | TO-220AB | TO | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SA2120-O(Q)
Trans GP BJT PNP 200V 12A 200000mW 3-Pin(3+Tab) TO-3PN
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Toshiba | GP BJT | PNP | Bipolar Power | Si | Single | 200 | 1 | 200 | 5 | 12 | 50 to 120 | 80@1A@5V | 200000 | 3@0.8A@8A | 3 | TO-3PN | TO | No | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RN2206(F) Trans Digital BJT PNP 50V 0.1A 300mW 3-Pin |
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Toshiba | Digital-BJT | PNP | Single | 50 | 4.7 | 0.1 | 0.1 | 80@10mA@5V | 300 | 0.3@0.25mA@5mA | 3 | No | No | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TK18E10K3,S1X(S
Trans MOSFET N-CH Si 100V 18A 3-Pin(3+Tab) TO-220 Magazine
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 100 | ±20 | 4 | 18 | 42@10V | 33@10V | 33 | 71000 | 1580@10V | 3 | TO-220 | TO | No | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TPWR8503NL,L1Q
Trans MOSFET N-CH Si 30V 300A 8-Pin DSOP EP Advance T/R
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Von 0,9989 € bis 1,0826 €
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single Quad Drain Triple Source | Enhancement | 1 | 30 | ±20 | 300 | 0.85@10V | 32@4.5V|74@10V | 74 | 2500 | 5300@15V | Tape and Reel | 8 | DSOP EP Advance | SO | No | No | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
ULN2003AFWG
Trans Darlington NPN 50V 0.5A 1250mW 16-Pin SOL
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Toshiba | Darlington BJT | NPN | Array 7 | 50 | 7 | 0.5 | 1000@350mA@2V | 1250 | 1.1@100mA|1.3@200mA|1.6@350mA | 16 | SOL | SO | No | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
RN2104,LF(CT
Trans Digital BJT PNP 50V 0.1A 100mW 3-Pin SSM T/R Automotive AEC-Q101
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Von 0,0202 € bis 0,0223 €
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Toshiba | Digital-BJT | PNP | Single | 50 | 47 | 1 | 0.1 | 80@10mA@5V | 100 | 0.3@0.25mA@5mA | Tape and Reel | 3 | SSM | No | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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TK100A10N1,S4X
Trans MOSFET N-CH Si 100V 207A 3-Pin(3+Tab) TO-220SIS Magazine
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Von 1,9911 € bis 2,1579 €
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 100 | ±20 | 4 | 207 | 3.8@10V | 140@10V | 140 | 45000 | 8800@50V | Magazine | 3 | TO-220SIS | TO | No | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TK100F06K3(TE24L,Q
Trans MOSFET N-CH Si 60V 100A Automotive AEC-Q101 3-Pin(2+Tab) TO-220SM T/R
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 60 | ±20 | 100 | 5@10V | 98@10V | 98 | 180000 | 4500@10V | Tape and Reel | 3 | TO-220SM | TO | No | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
02CZ4.3-Y(TE85L,F)
Zener Diode Single 4.24V 2.5% 130Ohm 200mW 3-Pin S-Mini T/R
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Toshiba | Zener | Voltage Regulator | Single | 4.24 | 2.5% | 5 | 5 | 130 | 200 | 200 | Tape and Reel | 3 | S-Mini | SOT | No | Unknown | No | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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GT30J65MRB,S1E
Trans IGBT Chip N-CH 650V 60A 200W 3-Pin(3+Tab) TO-3PN Stick
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1,0059 €
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Toshiba | IGBT-Chip | N | Single | ±25 | 650 | 60 | 200 | Stick | 3 | TO-3PN | TO | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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2SJ401(SM,Q)
Trans MOSFET P-CH Si 60V 20A 3-Pin(2+Tab) TO-220SM
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Toshiba | MOSFETs | Power MOSFET | Si | P | Single | Enhancement | 1 | 60 | ±20 | 2 | 20 | 45@10V | 90@10V | 90 | 100000 | 2800@10V | 3 | TO-220SM | TO | No | No | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
RN4986FE,LF(CB
Trans Digital BJT NPN/PNP 50V 0.1A 100mW 6-Pin ES T/R
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Toshiba | Digital-BJT | NPN|PNP | Dual | 50 | 4.7 | 1 | 0.1 | 80@10mA@5V | 100 | 0.3@0.25mA@5mA | Tape and Reel | 6 | ES | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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2SJ464(F)
Trans MOSFET P-CH Si 100V 18A 3-Pin(3+Tab) TO-220NIS
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Toshiba | MOSFETs | Power MOSFET | Si | P | Single | Enhancement | 1 | 100 | ±20 | 18 | 90@10V | 140@10V | 140 | 45000 | 2900@10V | 3 | TO-220NIS | TO | No | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SSM3J65CTC,L3F
Trans MOSFET P-CH Si 20V 0.7A 3-Pin CST-C T/R
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Von 0,0621 € bis 0,0682 €
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Toshiba | MOSFETs | Small Signal | Si | P | Single | Enhancement | 1 | 20 | ±10 | 0.7 | 500@4.5V | 500 | 48@10V | Tape and Reel | 3 | CST-C | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TJ15S06M3L,LXHQ
Trans MOSFET P-CH Si 60V 15A 3-Pin(2+Tab) DPAK+ T/R Automotive AEC-Q101
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Toshiba | MOSFETs | Power MOSFET | Si | P | Single | Enhancement | 1 | 60 | 10 | 3 | 15 | 50@10V | 36@10V | 36 | 41000 | 1770@10V | Tape and Reel | 3 | DPAK+ | TO | No | Yes | AEC-Q101 | Yes | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
T2N7002AK,LM(B
Trans MOSFET N-CH Si 60V 0.2A 3-Pin SOT-23
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Toshiba | MOSFETs | Small Signal | Si | N | Single | Enhancement | 1 | 60 | ±20 | 2.1 | 0.2 | 3900@10V | 0.27@4.5V | 1000 | 11@10V | 3 | SOT-23 | SOT | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SC6042(TPF2,Q,M) Trans GP BJT NPN 375V 1A 3-Pin MSTM T/R |
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Toshiba | GP BJT | NPN | Bipolar Power | Si | Single | 375 | 1 | 800 | 8 | 1.3@0.1A@0.8A | 1 | 50 to 120 | 80@1mA@5V|100@0.1A@5V|80@0.2A@5V | 1000 | 1@0.1A@0.8A | Tape and Reel | 3 | MSTM | No | No | No | No | No | EAR99 |