Toshiba Diodes, Transistors and Thyristors
| Teile-Nr. | Preis | Bestand | Hersteller | Kategorie | Type | Category | Maximum Rate of Rise of On-State Current - (A/us) | Maximum Rate of Rise of Off-State Voltage - (V/us) | Material | Frequency Band | Channel Type | Repetitive Peak Off-State Current - (mA) | Configuration | Channel Mode | Typical Zener Voltage - (V) | Peak Reverse Repetitive Voltage - (V) | Maximum Reverse Voltage - (V) | Maximum Gate Trigger Voltage - (V) | Maximum Gate Emitter Voltage - (V) | Maximum Collector-Emitter Voltage - (V) | Zener Voltage Tolerance | Surge Current Rating - (A) | Number of Elements per Chip | Maximum Reverse Current - (uA) | Maximum Gate Trigger Current - (mA) | Maximum Continuous Forward Current - (mA) | Maximum Collector-Base Voltage - (V) | Minimum Tuning Ratio | Maximum Holding Current - (mA) | Maximum Drain-Gate Voltage - (V) | Maximum Base-Emitter Voltage - (V) | Typical Input Resistance - (kOhm) | Tuning Ratio Test Condition | Test Current - (mA) | Peak Non-Repetitive Forward Surge Current - (A) | Maximum Series Resistance @ Maximum IF - (Ohm) | Maximum Forward Voltage - (V) | Maximum Drain-Source Voltage - (V) | Maximum Base-Emitter Saturation Voltage - (V) | Typical Resistor Ratio | Repetitive Peak Reverse Voltage - (V) | Peak Reverse Current - (uA) | Maximum Reverse Leakage Current - (uA) | Maximum Gate-Source Voltage - (V) | Maximum DC Collector Current - (A) | Maximum Continuous DC Collector Current - (A) | Operational Bias Conditions | Minimum Diode Capacitance - (pF) | Maximum Gate Threshold Voltage - (V) | Maximum Gate Peak Inverse Voltage - (V) | Peak On-State Voltage - (V) | Maximum Zener Impedance - (Ohm) | Maximum Power Dissipation @ 25C - (mW) | Maximum Diode Capacitance - (pF) | Maximum Continuous Drain Current - (A) | Repetitive Peak Forward Blocking Voltage - (V) | Peak Reverse Recovery Time - (ns) | Minimum DC Current Gain Range | Minimum DC Current Gain | Maximum Drain-Source Resistance - (mOhm) | Typical Gate Charge @ Vgs - (nC) | Rated Average On-State Current - (A) | Maximum Junction Ambient Thermal Resistance | RMS On-State Current - (A) | Maximum Junction Case Thermal Resistance | Typical Input Capacitance - (pF) | Typical Gate Charge @ 10V - (nC) | Maximum Power Dissipation - (mW) | Maximum Collector-Emitter Saturation Voltage - (V) | Typical Output Capacitance - (pF) | Typical Input Capacitance @ Vds - (pF) | Maximum Output Power - (W) | Typical Power Gain - (dB) | Typical 3rd Order Intercept Point - (dBm) | Maximum Transition Frequency - (MHz) | Maximum Noise Figure - (dB) | Maximum Turn-On Time - (ns) | Typical Drain-Source Resistance @ 25°C - (mOhm) | Process Technology | Packaging | Pin Count | Supplier Package | Standard Package Name | CECC Qualified | ESD Protection | Military | AEC Qualified | AEC Qualified Number | Auto motive | P PAP | ECCN Code | SVHC | SVHC Exceeds Threshold |
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2SC2712-OTE85LF
Trans GP BJT NPN 50V 0.15A 150mW 3-Pin S-Mini Automotive AEC-Q101
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Toshiba | GP BJT | NPN | Bipolar Small Signal | Si | Single | 50 | 1 | 60 | 5 | 0.15 | 50 to 120 | 70@2mA@6V | 150 | 0.25@10mA@100mA | 2 | 10 | 3 | S-Mini | SOT | No | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SSM3K7002KFU,LF
Trans MOSFET N-CH Si 60V 0.4A 3-Pin USM T/R Automotive AEC-Q101
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Von 0,0175 € bis 0,0193 €
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Toshiba | MOSFETs | Small Signal | Si | N | Single | Enhancement | 1 | 60 | ±20 | 0.4 | 1500@10V | 0.39@4.5V | 700 | 26@10V | Tape and Reel | 3 | USM | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TK560P65Y,RQ
Trans MOSFET N-CH Si 650V 7A 3-Pin(2+Tab) DPAK T/R
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Von 0,5479 € bis 0,5938 €
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 650 | ±30 | 4 | 7 | 560@10V | 14.5@10V | 14.5 | 60000 | 380@300V | Tape and Reel | 3 | DPAK | TO | No | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
CES388,L3F
Diode Small Signal Schottky Si 45V 0.1A Automotive 2-Pin ESC T/R
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Von 0,0202 € bis 0,0223 €
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Toshiba | Gleichrichter | Small Signal Schottky Diode | Single | 45 | 0.1 | 1 | 0.6 | 5 | 150 | Tape and Reel | 2 | ESC | SOD | Unknown | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TPH6400ENH,L1Q
Trans MOSFET N-CH Si 200V 21A 8-Pin SOP Advance
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Von 0,6383 € bis 0,6917 €
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single Quad Drain Triple Source | Enhancement | 1 | 200 | ±20 | 4 | 21 | 64@10V | 11.2@10V | 78.1 | 2.19 | 11.2 | 2800 | 90 | 810@100V | 54@10V | 8 | SOP Advance | SO | No | Yes | No | No | No | No | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SJ668(TE16L1,NQ)
Trans MOSFET P-CH Si 60V 5A 3-Pin(2+Tab) New PW-Mold T/R
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Toshiba | MOSFETs | Power MOSFET | Si | P | Single | Enhancement | 1 | 60 | ±20 | 5 | 170@10V | 15@10V | 15 | 20000 | 700@10V | Tape and Reel | 3 | New PW-Mold | TO | No | Unknown | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TK50J30D,S1Q(O
Trans MOSFET N-CH Si 300V 50A 3-Pin(3+Tab) TO-3PN Tube
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 300 | ±20 | 3.5 | 50 | 52@10V | 160@10V | 160 | 410000 | 7000@100V | Tube | 3 | TO-3PN | TO | No | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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2SC3325-Y,LF(T
Trans GP BJT NPN 50V 0.5A 200mW 3-Pin S-Mini T/R
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Toshiba | GP BJT | NPN | Bipolar Small Signal | Si | Single | 50 | 1 | 50 | 5 | 0.5 | 30 to 50|50 to 120|120 to 200 | 120@100mA@1V|40@400mA@6V | 200 | 0.25@10mA@100mA | Tape and Reel | 3 | S-Mini | SOT | No | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SSM3J328R,LF
Trans MOSFET P-CH Si 20V 6A 3-Pin SOT-23F T/R
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Toshiba | MOSFETs | Small Signal | Si | P | Single | Enhancement | 1 | 20 | ±8 | 1 | 6 | 29.8@4.5V | 12.8@4.5V | 2000 | 840@10V | Tape and Reel | 3 | SOT-23F | SOT | No | Unknown | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TK14N65W,S1F(S
Trans MOSFET N-CH Si 650V 13.7A 3-Pin(3+Tab) TO-247
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 650 | ±30 | 13.7 | 250@10V | 35@10V | 130000 | 1300@300V | 3 | TO-247 | TO | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TK58A06N1,S4X(S
Trans MOSFET N-CH Si 60V 105A 3-Pin(3+Tab) TO-220SIS Magazine
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 60 | ±20 | 105 | 5.4@10V | 46@10V | 46 | 35000 | 3400@30V | Magazine | 3 | TO-220SIS | TO | No | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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TPH1110FNH,L1Q(M
Trans MOSFET N-CH Si 250V 15A 8-Pin SOP Advance T/R
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single Quad Drain Triple Source | Enhancement | 1 | 250 | ±20 | 4 | 15 | 112@10V | 11@10V | 11 | 2800 | 810@100V | Tape and Reel | 8 | SOP Advance | SO | No | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TRS24N65FB,S1Q
Diode Schottky SiC 650V 24A 3-Pin(3+Tab) TO-247 Tube
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Von 4,3261 € bis 4,7356 €
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Toshiba | Gleichrichter | Schottky Diode | SiC | Dual Common Cathode | 650 | 24 | 184 | 1.6@12A | 60 | 230000 | Tube | 3 | TO-247 | TO | No | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
1SS385FV,L3F
Diode Small Signal Schottky 15V 0.1A 3-Pin VESM T/R
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Von 0,0243 € bis 0,0267 €
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Toshiba | Gleichrichter | Small Signal Schottky Diode | Single Dual Anode | 15 | 0.1 | 1 | 0.5 | 20 | 150 | Tape and Reel | 3 | VESM | SOT | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TK65S04N1L,LXHQ(O Trans MOSFET N-CH Si 40V 65A 3-Pin(2+Tab) DPAK+ T/R |
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 40 | ±20 | 65 | 4.3@10V | 39@10V | 107000 | 2550@10V | 3 | DPAK+ | TO | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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TK11A60D(STA4,Q,M)
Trans MOSFET N-CH Si 600V 11A 3-Pin(3+Tab) TO-220SIS
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 600 | ±30 | 11 | 650@10V | 28@10V | 28 | 45000 | 1550@25V | 3 | TO-220SIS | TO | No | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CRF03A,LQ(M Diode Switching Si 600V 0.7A 2-Pin S-FLAT |
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Toshiba | Gleichrichter | Switching Diode | Si | Single | 600 | 0.7 | 10 | 2 | 50 | 100 | 2 | S-FLAT | No | No | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SC1815-Y(TPE2,F)
Trans GP BJT NPN 50V 0.15A 400mW 3-Pin TO-92 T/R
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Toshiba | GP BJT | NPN | Bipolar Small Signal | Si | Single | 50 | 1 | 60 | 5 | 1@10mA@100mA | 0.15 | 120 to 200 | 120@2mA@6V | 400 | 0.25@10mA@100mA | 2 | 10 | Tape and Reel | 3 | TO-92 | TO | No | No | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MKZ20V,LM
Zener Diode Silicon Epitaxial Planar
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Von 0,0189 € bis 0,0208 €
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Toshiba | Zener | 3 | SOT-23 | SOT | No | No | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TK20V60W5,LVQ(S
Trans MOSFET N-CH Si 600V 20A 5-Pin DFN EP T/R
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single Triple Source | Enhancement | 1 | 600 | ±30 | 20 | 190@10V | 55@10V | 55 | 156000 | 1800@300V | Tape and Reel | 5 | DFN EP | DFN | No | No | No | No | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TTC5460B,Q(S Silicon NPN Triple-Diffused Type |
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Toshiba | GP BJT | Sack | 3 | TO-126N | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TPN6R303NC,LQ(S
Trans MOSFET N-CH Si 30V 43A 8-Pin TSON EP Advance T/R
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single Quad Drain Triple Source | Enhancement | 1 | 30 | ±20 | 43 | 6.3@10V | 24@10V | 24 | 19000 | 1370@15V | Tape and Reel | 8 | TSON EP Advance | SON | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SC2884-Y(TE12L,CF
Trans GP BJT NPN 30V 0.8A 1000mW 4-Pin(3+Tab) PW-Mini T/R
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Toshiba | GP BJT | NPN | Bipolar Small Signal | Si | Single Dual Collector | 30 | 1 | 35 | 5 | 0.8 | 120 to 200 | 160@100mA@1V | 1000 | 0.5@20mA@500mA | Tape and Reel | 4 | PW-Mini | SOT | No | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
U5DL2C48A(TE24R,Q
Diode Switching 200V 5A 3-Pin(2+Tab) TO-220SM T/R
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Toshiba | Gleichrichter | Switching Diode | Dual Common Cathode | 200 | 5 | 27.5 | 0.98@2.5A | 10 | 30 | Tape and Reel | 3 | TO-220SM | TO | No | No | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
1SS385,LF(CT
Diode Small Signal Schottky 15V 0.1A 3-Pin SSM T/R
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Toshiba | Gleichrichter | Small Signal Schottky Diode | Dual Common Cathode | 15 | 0.1 | 1 | 0.5 | 20 | 100 | Tape and Reel | 3 | SSM | No | No | No | No | EAR99 | No |