Toshiba Diodes, Transistors and Thyristors
| Teile-Nr. | Preis | Bestand | Hersteller | Kategorie | Type | Maximum Rate of Rise of Off-State Voltage - (V/us) | Category | Maximum Rate of Rise of On-State Current - (A/us) | Material | Frequency Band | Channel Type | Maximum Gate Trigger Voltage - (V) | Configuration | Channel Mode | Typical Zener Voltage - (V) | Repetitive Peak Reverse Voltage - (V) | Peak Reverse Repetitive Voltage - (V) | Maximum Reverse Voltage - (V) | Maximum Gate Trigger Current - (mA) | Maximum Gate Emitter Voltage - (V) | Maximum Collector-Emitter Voltage - (V) | Zener Voltage Tolerance | Surge Current Rating - (A) | Maximum Reverse Current - (uA) | Maximum Continuous Forward Current - (A) | Maximum Collector-Base Voltage - (V) | Number of Elements per Chip | Minimum Tuning Ratio | Maximum Holding Current - (mA) | Maximum Drain-Gate Voltage - (V) | Maximum Continuous DC Collector Current - (A) | Maximum Base-Emitter Voltage - (V) | Typical Input Resistance - (kOhm) | Tuning Ratio Test Condition | Test Current - (mA) | Peak Non-Repetitive Forward Surge Current - (A) | Maximum Series Resistance @ Maximum IF - (Ohm) | Maximum Forward Voltage - (V) | Maximum Drain-Source Voltage - (V) | Maximum Base-Emitter Saturation Voltage - (V) | Typical Resistor Ratio | Peak Reverse Current - (uA) | Maximum Reverse Leakage Current - (uA) | Maximum Gate-Source Voltage - (V) | Maximum DC Collector Current - (A) | Peak On-State Voltage - (V) | Operational Bias Conditions | Minimum Diode Capacitance - (pF) | Maximum Junction Ambient Thermal Resistance | Maximum Gate Threshold Voltage - (V) | Maximum Gate Peak Inverse Voltage - (V) | Maximum Zener Impedance - (Ohm) | Maximum Power Dissipation - (mW) | Maximum Power Dissipation @ 25C - (mW) | Maximum Diode Capacitance - (pF) | Maximum Continuous Drain Current - (A) | RMS On-State Current - (A) | Repetitive Peak Forward Blocking Voltage - (V) | Rated Average On-State Current - (A) | Peak Reverse Recovery Time - (ns) | Minimum DC Current Gain Range | Minimum DC Current Gain | Maximum Drain-Source Resistance - (mOhm) | Typical Gate Charge @ Vgs - (nC) | Repetitive Peak Off-State Current - (mA) | Maximum Junction Case Thermal Resistance | Typical Gate Charge @ 10V - (nC) | Typical Output Capacitance - (pF) | Typical Input Capacitance @ Vds - (pF) | Typical Power Gain - (dB) | Maximum Output Power - (W) | Maximum Collector-Emitter Saturation Voltage - (V) | Maximum Frequency - (MHz) | Typical 3rd Order Intercept Point - (dBm) | Maximum Transition Frequency - (MHz) | Maximum Noise Figure - (dB) | Typical Drain-Source Resistance @ 25°C - (mOhm) | Process Technology | Packaging | Pin Count | Supplier Package | Standard Package Name | CECC Qualified | ESD Protection | Military | AEC Qualified | AEC Qualified Number | Auto motive | P PAP | ECCN Code | SVHC | SVHC Exceeds Threshold |
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2SC3783
Trans GP BJT NPN 800V 5A 100000mW 3-Pin(3+Tab) TO-3PN
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Toshiba | GP BJT | NPN | Bipolar Power | Si | Single | 800 | 900 | 1 | 7 | 1.5@0.6A@3A | 5 | 100000 | 2 to 30 | 10@10mA@5V|10@3A@5V | 1@0.6A@3A | 3 | TO-3PN | TO | No | No | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
S5277J(Q)
Diode 600V 1A 2-Pin DO-41
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Toshiba | Gleichrichter | Single | 600 | 1 | 30 | 1.2 | 10 | 2 | DO-41 | DO | No | No | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SK3475(TE12L,F)
Trans RF MOSFET N-CH 20V 1A 4-Pin(3+Tab) PW-Mini T/R
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Toshiba | HF-MOSFETs | Si | N | Single Dual Source | Enhancement | 1 | 20 | 10 | 3000 | 1 | 11@7.2V | 14.9(Min) | 0.63(Min) | Tape and Reel | 4 | PW-Mini | SOT | No | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
RN2406(TE85L,F)
Trans Digital BJT PNP 50V 0.1A 200mW 3-Pin S-Mini T/R
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Toshiba | Digital-BJT | PNP | Single | 50 | 0.1 | 4.7 | 0.1 | 200 | 50 to 120 | 80@10mA@5V | 0.3@0.25mA@5mA | Tape and Reel | 3 | S-Mini | SOT | No | Unknown | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
U5GWJ2C48C(TE24L,Q
Diode Schottky 40V 5A 3-Pin(2+Tab) TO-220SM
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Toshiba | Gleichrichter | Schottky Diode | Dual Common Cathode | 40 | 5 | 55 | 0.55@2.5A | 3500 | 3 | TO-220SM | TO | No | No | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 10JL2C48A(Q) Diode Switching 600V 10A 3-Pin(3+Tab) |
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Toshiba | Gleichrichter | Switching Diode | Dual Common Cathode | 600 | 10 | 40 | 4@5A | 50 | 35 | 3 | No | No | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SSM3J325F,LF(B
Trans MOSFET P-CH Si 20V 2A 3-Pin S-Mini
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Toshiba | MOSFETs | Power MOSFET | Si | P | Single | Enhancement | 1 | 20 | ±8 | 600 | 2 | 150@4.5V | 4.6@4.5V | 270@10V | 3 | S-Mini | SOT | No | Yes | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SC5755(TE85L,F)
Trans GP BJT NPN 10V 2A 500mW 3-Pin TSM T/R
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Toshiba | GP BJT | NPN | Bipolar Power | Si | Single | 10 | 20 | 1 | 7 | 1.1@12mA@0.6A | 2 | 500 | 200 to 300|300 to 500 | 200@0.6A@2V|400@0.2A@2V | 0.12@12mA@0.6A | Tape and Reel | 3 | TSM | SOT | No | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SK2965(F)
Trans MOSFET N-CH Si 200V 11A 3-Pin(3+Tab) TO-220NIS
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 200 | ±20 | 35000 | 11 | 260@10V | 30@10V | 30 | 1200@10V | 3 | TO-220NIS | TO | No | No | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
RN1108MFV,L3F
Trans Digital BJT NPN 50V 0.1A 150mW 3-Pin VESM T/R Automotive AEC-Q101
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Von 0,0162 € bis 0,0178 €
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Toshiba | Digital-BJT | NPN | Single | 50 | 0.1 | 22 | 0.468 | 150 | 80@10mA@5V | 0.3@0.5mA@5mA | Tape and Reel | 3 | VESM | SOT | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SSM3J15FU,LF
Trans MOSFET P-CH Si 30V 0.1A 3-Pin USM T/R Automotive AEC-Q101
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Von 0,0243 € bis 0,0267 €
pro Stück
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Toshiba | MOSFETs | Small Signal | Si | P | Single | Enhancement | 1 | 30 | ±20 | 1.7 | 150 | 0.1 | 12000@4V | 9.1@3V | Tape and Reel | 3 | USM | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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RN2427TE85LF
Trans Digital BJT PNP 50V 0.8A 200mW 3-Pin S-Mini T/R
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Von 0,0594 € bis 0,0689 €
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Toshiba | Digital-BJT | PNP | Single | 50 | 0.8 | 2.2 | 0.22 | 200 | 90@100mA@1V | 0.25@1mA@50mA | Tape and Reel | 3 | S-Mini | SOT | No | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SA1832-Y,LF
Trans GP BJT PNP 50V 0.15A 120mW 3-Pin SSM T/R Automotive AEC-Q101
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Von 0,0202 € bis 0,0223 €
pro Stück
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Toshiba | GP BJT | PNP | Bipolar Small Signal | Si | Single | 50 | 50 | 1 | 5 | 0.15 | 120 | 120 to 200 | 120@2mA@6V | 0.3@10mA@100mA | Tape and Reel | 3 | SSM | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SC4935-O(Q,J) Trans GP BJT NPN 50V 3A 2000mW 3-Pin(3+Tab) TO-220NIS |
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Toshiba | GP BJT | NPN | Bipolar Power | Si | Single | 50 | 50 | 1 | 5 | 3 | 2000 | 50 to 120 | 70@0.5mA@2V | 0.6@0.2A@2A | 3 | TO-220NIS | TO | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
CMZB13(TE12L,Q)
Zener Diode Single 13V 10% 30Ohm 1000mW 2-Pin M-FLAT T/R
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Toshiba | Zener | Voltage Regulator | Single | 13 | 10% | 10 | 10 | 30 | 1000 | Tape and Reel | 2 | M-FLAT | Unknown | No | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
CUZ6V2,H3F
Zener Diode Single 6.2V 6% 30Ohm 600mW 2-Pin USC T/R
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0,0258 €
pro Stück
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Toshiba | Zener | Voltage Regulator | Single | 6.2 | 6% | 5 | 2.5 | 30 | 600 | 600 | 105(Typ) | Tape and Reel | 2 | USC | SOD | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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CMZ47(TE12L,Q)
Zener Diode Single 47V 10% 65Ohm 2000mW 2-Pin M-FLAT T/R
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Toshiba | Zener | Voltage Regulator | Single | 47 | 10% | 6 | 10 | 65 | 2000 | Tape and Reel | 2 | M-FLAT | No | Unknown | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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2SA1163-GR,LF
Trans GP BJT PNP 120V 0.1A 150mW 3-Pin S-Mini T/R Automotive AEC-Q101
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Von 0,0297 € bis 0,0327 €
pro Stück
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Toshiba | GP BJT | PNP | Bipolar Small Signal | Si | Single | 120 | 120 | 1 | 5 | 0.1 | 150 | 300 to 500 | 350@2mA@6V | 4 | 0.3@1mA@10mA | 10 | Tape and Reel | 3 | S-Mini | SOT | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SSM3K15F(TE85L,F)
Trans MOSFET N-CH Si 30V 0.1A 3-Pin S-Mini T/R
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Toshiba | MOSFETs | Small Signal | Si | N | Single | Enhancement | 1 | 30 | ±20 | 200 | 0.1 | 4000@4V | 7.8@3V | Tape and Reel | 3 | S-Mini | SOT | No | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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2SC5198-O(S1,E,S)
Trans GP BJT NPN 140V 10A 100000mW 3-Pin(3+Tab) TO-3PN Magazine
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Toshiba | GP BJT | NPN | Bipolar Power | Si | Single | 140 | 140 | 1 | 5 | 10 | 100000 | 50 to 120 | 80@1A@5V | 2@0.7A@7A | Magazine | 3 | TO-3PN | TO | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1SS389,L3F(B Diode Small Signal Schottky 15V 0.1A 2-Pin ESC |
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Toshiba | Gleichrichter | 2 | ESC | SOD | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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CMH05A(TE12L,Q)
Diode Switching 400V 1A 2-Pin M-FLAT T/R
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Toshiba | Gleichrichter | Switching Diode | Single | 400 | 1 | 10 | 1.8 | 10 | 35 | Tape and Reel | 2 | M-FLAT | No | No | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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TK31A60W,S4VX(M
Trans MOSFET N-CH Si 600V 30.8A 3-Pin(3+Tab) TO-220SIS
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 600 | ±30 | 3.7 | 45000 | 30.8 | 88@10V | 86@10V | 86 | 3000@300V | 3 | TO-220SIS | TO | No | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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1SS367,H3F(B
Diode Small Signal Schottky 15V 0.1A 2-Pin USC
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Toshiba | Gleichrichter | 2 | USC | SOD | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TK33S10N1Z,LQ
Trans MOSFET N-CH Si 100V 33A 3-Pin(2+Tab) DPAK+ T/R Automotive AEC-Q101
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0,541 €
pro Stück
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 100 | ±20 | 4 | 125000 | 33 | 9.7@10V | 28@10V | 28 | 2050@10V | Tape and Reel | 3 | DPAK+ | TO | No | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 |