Toshiba Diodes, Transistors and Thyristors
| Teile-Nr. | Preis | Bestand | Hersteller | Kategorie | Type | Category | Maximum Rate of Rise of On-State Current - (A/us) | Maximum Rate of Rise of Off-State Voltage - (V/us) | Material | Frequency Band | Channel Type | Repetitive Peak Off-State Current - (mA) | Configuration | Channel Mode | Typical Zener Voltage - (V) | Peak Reverse Repetitive Voltage - (V) | Maximum Reverse Voltage - (V) | Maximum Gate Trigger Voltage - (V) | Maximum Gate Emitter Voltage - (V) | Maximum Collector-Emitter Voltage - (V) | Zener Voltage Tolerance | Surge Current Rating - (A) | Number of Elements per Chip | Maximum Reverse Current - (uA) | Maximum Gate Trigger Current - (mA) | Maximum Continuous Forward Current - (mA) | Maximum Collector-Base Voltage - (V) | Minimum Tuning Ratio | Maximum Holding Current - (mA) | Maximum Drain-Gate Voltage - (V) | Maximum Base-Emitter Voltage - (V) | Typical Input Resistance - (kOhm) | Tuning Ratio Test Condition | Test Current - (mA) | Peak Non-Repetitive Forward Surge Current - (A) | Maximum Series Resistance @ Maximum IF - (Ohm) | Maximum Forward Voltage - (V) | Maximum Drain-Source Voltage - (V) | Maximum Base-Emitter Saturation Voltage - (V) | Typical Resistor Ratio | Repetitive Peak Reverse Voltage - (V) | Peak Reverse Current - (uA) | Maximum Reverse Leakage Current - (uA) | Maximum Gate-Source Voltage - (V) | Maximum DC Collector Current - (A) | Maximum Continuous DC Collector Current - (A) | Operational Bias Conditions | Minimum Diode Capacitance - (pF) | Maximum Gate Threshold Voltage - (V) | Maximum Gate Peak Inverse Voltage - (V) | Peak On-State Voltage - (V) | Maximum Zener Impedance - (Ohm) | Maximum Power Dissipation @ 25C - (mW) | Maximum Diode Capacitance - (pF) | Maximum Continuous Drain Current - (A) | Repetitive Peak Forward Blocking Voltage - (V) | Peak Reverse Recovery Time - (ns) | Minimum DC Current Gain Range | Minimum DC Current Gain | Maximum Drain-Source Resistance - (mOhm) | Typical Gate Charge @ Vgs - (nC) | Rated Average On-State Current - (A) | Maximum Junction Ambient Thermal Resistance | RMS On-State Current - (A) | Maximum Junction Case Thermal Resistance | Typical Input Capacitance - (pF) | Typical Gate Charge @ 10V - (nC) | Maximum Power Dissipation - (mW) | Maximum Collector-Emitter Saturation Voltage - (V) | Typical Output Capacitance - (pF) | Typical Input Capacitance @ Vds - (pF) | Maximum Output Power - (W) | Typical Power Gain - (dB) | Typical 3rd Order Intercept Point - (dBm) | Maximum Transition Frequency - (MHz) | Maximum Noise Figure - (dB) | Maximum Turn-On Time - (ns) | Typical Drain-Source Resistance @ 25°C - (mOhm) | Process Technology | Packaging | Pin Count | Supplier Package | Standard Package Name | CECC Qualified | ESD Protection | Military | AEC Qualified | AEC Qualified Number | Auto motive | P PAP | ECCN Code | SVHC | SVHC Exceeds Threshold |
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1SV325TPH3F
Diode VAR Cap Single 10V 44pF 2-Pin ESC T/R
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Toshiba | Varaktors | TCXO|Tuner|VCO | Single | 10 | 0.003 | 4 | 1V/4V | 44@1V | Tape and Reel | 2 | ESC | SOD | No | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TK42A12N1,S4X
Trans MOSFET N-CH Si 120V 88A 3-Pin(3+Tab) TO-220SIS Magazine
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Von 0,6137 € bis 0,665 €
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 120 | ±20 | 88 | 9.4@10V | 52@10V | 52 | 35000 | 3100@60V | Magazine | 3 | TO-220SIS | TO | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SC6042(TPF2,Q,M) Trans GP BJT NPN 375V 1A 3-Pin MSTM T/R |
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Toshiba | GP BJT | NPN | Bipolar Power | Si | Single | 375 | 1 | 800 | 8 | 1.3@0.1A@0.8A | 1 | 50 to 120 | 80@1mA@5V|100@0.1A@5V|80@0.2A@5V | 1000 | 1@0.1A@0.8A | Tape and Reel | 3 | MSTM | No | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TK3R2A08QM,S4X
Trans MOSFET N-CH Si 80V 92A 3-Pin(3+Tab) TO-220SIS Tube
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Von 0,9793 € bis 1,0613 €
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 80 | ±20 | 3.5 | 92 | 3.2@10V | 58@6V|102@10V | 102 | 45000 | 7670@40V | U-MOS X-H | Tube | 3 | TO-220SIS | TO | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SC3420-BL(Q) Trans GP BJT NPN 20V 5A 1500mW 3-Pin(3+Tab) TO-126IS |
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Toshiba | GP BJT | NPN | Bipolar Power | Si | Single | 20 | 1 | 50 | 8 | 5 | 300 to 500 | 300@0.5A@2V | 1500 | 1@0.1A@4A | 3 | TO-126IS | TO | No | No | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
1SS361FV,L3F
Diode Switching 85V 0.3A 3-Pin VESM T/R Automotive AEC-Q101
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Von 0,0203 € bis 0,0224 €
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Toshiba | Gleichrichter | 3 | VESM | SOT | No | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TBAV70,LM
Diode Switching Si 85V 0.215A 3-Pin SOT-23 T/R
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Toshiba | Gleichrichter | Switching Diode | Si | Dual Common Cathode | 85 | 0.215 | 2 | 1.25@0.15A | 0.5 | 0.9(Typ) | 4 | 320 | Tape and Reel | 3 | SOT-23 | SOT | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
1SS193,LF
Diode Switching 85V 0.1A 3-Pin S-Mini T/R Automotive AEC-Q101
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Von 0,0217 € bis 0,0238 €
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Toshiba | Gleichrichter | Switching Diode | Single | 85 | 0.1 | 2 | 1.2 | 0.5 | 4 | 150 | Tape and Reel | 3 | S-Mini | SOT | No | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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2SC3710A-Y(F)
Trans GP BJT NPN 80V 12A 30000mW 3-Pin(3+Tab) TO-220NIS
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Toshiba | GP BJT | NPN | Bipolar Power | Si | Single | 80 | 1 | 80 | 6 | 1.2@0.3A@6A | 12 | 120 to 200 | 120@1A@1V | 30000 | 0.4@0.3A@6A | 3 | TO-220NIS | TO | No | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SK3476(TE12L,Q)
Trans RF MOSFET N-CH 20V 3A 3-Pin PW-X T/R
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Toshiba | HF-MOSFETs | Si | N | Single | Enhancement | 1 | 20 | 10 | 3 | 20000 | 53@7.2V | 7(Min) | 11.4(Min) | Tape and Reel | 3 | PW-X | No | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SK2789(SM,Q)
Trans MOSFET N-CH Si 100V 27A 3-Pin(2+Tab) TO-220SM
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 100 | ±20 | 27 | 85@10V | 50@10V | 50 | 60000 | 1100@10V | 3 | TO-220SM | TO | No | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TK31J60W,S1VQ
Trans MOSFET N-CH Si 600V 30.8A 3-Pin(3+Tab) TO-3PN Bag/Tube
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Von 4,0265 € bis 4,3566 €
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 600 | ±30 | 3.7 | 30.8 | 88@10V | 86@10V | 86 | 230000 | 3000@300V | Bag|Tube | 3 | TO-3PN | TO | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
GT60J323(Q)
Trans IGBT Chip N-CH 600V 60A 170W 3-Pin(3+Tab) TO-3PL
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Toshiba | IGBT-Chip | N | Single | ±25 | 600 | 60 | 170 | 3 | TO-3PL | TO | No | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SK2865(TE16L1,NQ)
Trans MOSFET N-CH Si 600V 2A 3-Pin(2+Tab) New PW-Mold T/R
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 600 | ±30 | 2 | 5000@10V | 9@10V | 9 | 20000 | 380@10V | Tape and Reel | 3 | New PW-Mold | TO | No | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SA1162-Y,LXGF(T Transistor Silicon PNP Epitaxial Audio Frequency General Purpose Amplifier Automotive AEC-Q101 |
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Toshiba | GP BJT | 3 | S-Mini | SOT | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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2SK209-BL(TE85L,F)
Trans JFET N-CH Si 3-Pin S-Mini T/R
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Toshiba | JFETs | Si | N | Single | -50 | 13 | 150 | 5(Typ) | Tape and Reel | 3 | S-Mini | SOT | No | Unknown | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
1Z24(TPA2,Q)
Zener Diode Single 24V 10% 30Ohm 1000mW 2-Pin DO-15 T/R
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Toshiba | Zener | Voltage Regulator | Single | 24 | 10% | 10 | 1.2 | 10 | 30 | 1000 | 1000 | Tape and Reel | 2 | DO-15 | DO | No | Unknown | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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1S1834(Q)
Diode Switching 400V 1A 2-Pin DO-15
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Toshiba | Gleichrichter | Switching Diode | Single | 400 | 1@Ta=50C | 66 | 1.2@1.5A | 10 | 1500 | 2 | DO-15 | DO | No | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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1S1832(Q)
Diode Switching 1.8KV 0.7A 2-Pin DO-15
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Toshiba | Gleichrichter | Switching Diode | Single | 1800 | 0.7@Ta=50C | 66 | 2@1.5A | 10 | 6000 | 2 | DO-15 | DO | No | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1Z12(TPA1,Q) Zener Diode Single 12V 10% 30Ohm 1000mW 2-Pin DO-15 T/R |
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Toshiba | Zener | Voltage Regulator | Single | 12 | 10% | 10 | 1.2 | 10 | 30 | 1000 | 1000 | Tape and Reel | 2 | DO-15 | DO | Unknown | No | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1GH46(TPA3,Q) Diode Switching 400V 1A 2-Pin DO-41SS T/R |
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Toshiba | Gleichrichter | Switching Diode | Single | 400 | 1 | 1 | 1.1 | 100 | 200 | Tape and Reel | 2 | DO-41SS | DO | No | No | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SJ439(TE16L1,NQ) Trans MOSFET P-CH Si 16V 5A 3-Pin(2+Tab) New PW-Mold |
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Toshiba | MOSFETs | Power MOSFET | Si | P | Single | Enhancement | 1 | 16 | ±8 | 5 | 200@4V | 24@5V | 20000 | 1050@10V | 3 | New PW-Mold | TO | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TJ30S06M3L,LXHQ
Trans MOSFET P-CH Si 60V 30A 3-Pin(2+Tab) DPAK+ T/R Automotive AEC-Q101
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Toshiba | MOSFETs | Power MOSFET | Si | P | Single | Enhancement | 1 | 60 | 10 | 3 | 30 | 21.8@10V | 80@10V | 80 | 68000 | 3950@10V | Tape and Reel | 3 | DPAK+ | TO | Yes | AEC-Q101 | Yes | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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2SA1937(Q)
Trans GP BJT PNP 600V 0.5A 1000mW 3-Pin(2+Tab) New PW-Mold
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Toshiba | GP BJT | PNP | Bipolar Power | Si | Single | 600 | 1 | 600 | 7 | 0.9@10mA@100mA | 0.5 | 50 to 120 | 100@20mA@5V|80@100mA@5V | 1000 | 1@10mA@100mA | 3 | New PW-Mold | TO | No | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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RN1104MFV,L3F(CT
Trans Digital BJT NPN 50V 0.1A 150mW 3-Pin VESM T/R
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Von 0,013 € bis 0,0148 €
pro Stück
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Toshiba | Digital-BJT | NPN | Single | 50 | 47 | 1 | 0.1 | 80@10mA@5V | 150 | 0.3@0.25mA@5mA | Tape and Reel | 3 | VESM | SOT | No | No | No | No | EAR99 | No |