Toshiba Diodes, Transistors and Thyristors
| Teile-Nr. | Preis | Bestand | Hersteller | Kategorie | Type | Material | Category | Maximum Rate of Rise of On-State Current - (A/us) | Maximum Rate of Rise of Off-State Voltage - (V/us) | Frequency Band | Channel Type | Maximum Reverse Voltage - (V) | Maximum Gate Trigger Voltage - (V) | Configuration | Channel Mode | Typical Zener Voltage - (V) | Peak Reverse Repetitive Voltage - (V) | Number of Elements per Chip | Maximum Gate Emitter Voltage - (V) | Maximum Collector-Emitter Voltage - (V) | Maximum Base-Emitter Saturation Voltage - (V) | Zener Voltage Tolerance | Surge Current Rating - (A) | Peak On-State Voltage - (V) | Maximum Reverse Current - (uA) | Maximum Gate Trigger Current - (mA) | Maximum Continuous Forward Current - (A) | Maximum Continuous DC Collector Current - (mA) | Maximum Collector-Base Voltage - (V) | Maximum Drain-Gate Voltage - (V) | Typical Input Resistance - (kOhm) | Test Current - (mA) | Rated Average On-State Current - (A) | Peak Non-Repetitive Forward Surge Current - (A) | Maximum Series Resistance @ Maximum IF - (Ohm) | Maximum Power Dissipation - (mW) | Maximum Holding Current - (mA) | Maximum Drain-Source Voltage - (V) | Maximum Continuous Drain Current - (mA) | Maximum Base-Emitter Voltage - (V) | Typical Resistor Ratio | Repetitive Peak Reverse Voltage - (V) | Maximum Reverse Leakage Current - (uA) | Maximum Gate-Source Voltage - (V) | Maximum Forward Voltage - (V) | Maximum DC Collector Current - (A) | Peak Reverse Current - (uA) | Operational Bias Conditions | Minimum Diode Capacitance - (pF) | Maximum Junction Ambient Thermal Resistance | Maximum Gate Threshold Voltage - (V) | Maximum Gate Peak Inverse Voltage - (V) | Maximum Diode Capacitance - (pF) | Repetitive Peak Forward Blocking Voltage - (V) | Maximum Zener Impedance - (Ohm) | Maximum Power Dissipation @ 25C - (mW) | Peak Reverse Recovery Time - (ns) | Minimum DC Current Gain Range | Minimum DC Current Gain | Maximum Drain-Source Resistance - (mOhm) | Typical Gate Charge @ Vgs - (nC) | RMS On-State Current - (A) | Maximum Junction Case Thermal Resistance | Typical Input Capacitance - (pF) | Typical Gate Charge @ 10V - (nC) | Repetitive Peak Off-State Current - (mA) | Maximum Transition Frequency - (MHz) | Typical Output Capacitance - (pF) | Typical Input Capacitance @ Vds - (pF) | Maximum Output Power - (W) | Maximum Collector-Emitter Saturation Voltage - (V) | Maximum Frequency - (MHz) | Typical Power Gain - (dB) | Typical 3rd Order Intercept Point - (dBm) | Maximum Noise Figure - (dB) | Maximum Turn-On Time - (ns) | Typical Drain-Source Resistance @ 25°C - (mOhm) | Process Technology | Packaging | Pin Count | Supplier Package | Standard Package Name | CECC Qualified | ESD Protection | Military | AEC Qualified | AEC Qualified Number | Auto motive | P PAP | ECCN Code | SVHC | SVHC Exceeds Threshold |
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2SA1832-Y(TE85L,F)
Trans GP BJT PNP 50V 0.15A 100mW 3-Pin SSM T/R Automotive AEC-Q101
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Toshiba | GP BJT | PNP | Si | Bipolar Small Signal | Single | 1 | 50 | 50 | 100 | 5 | 0.15 | 120 to 200 | 120@2mA@6V | 0.3@10mA@100mA | Tape and Reel | 3 | SSM | No | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TK20S06K3L(T6L1,NQ
Trans MOSFET N-CH Si 60V 20A 3-Pin(2+Tab) DPAK+ T/R Automotive AEC-Q101
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Toshiba | MOSFETs | Si | Power MOSFET | N | Single | Enhancement | 1 | 38000 | 60 | 20 | ±20 | 29@10V | 18@10V | 18 | 780@10V | Tape and Reel | 3 | DPAK+ | TO | No | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
CRZ20(TE85L,Q)
Zener Diode Single 20V 10% 30Ohm 700mW 2-Pin S-FLAT T/R
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Toshiba | Zener | Voltage Regulator | Single | 20 | 10% | 10 | 700 | 10 | 30 | 700 | Tape and Reel | 2 | S-FLAT | No | Unknown | No | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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CRZ20(TE85L,Q,M)
Zener Diode Single 20V 10% 30Ohm 700mW 2-Pin S-FLAT T/R
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Von 0,1308 € bis 0,1418 €
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Toshiba | Zener | Voltage Regulator | Single | 20 | 10% | 10 | 700 | 10 | 30 | 700 | Tape and Reel | 2 | S-FLAT | No | Unknown | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
1SS361FV,L3F
Diode Switching 85V 0.3A 3-Pin VESM T/R Automotive AEC-Q101
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Von 0,0202 € bis 0,0223 €
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Toshiba | Gleichrichter | 3 | VESM | SOT | No | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SK1062(F)
Trans MOSFET N-CH Si 60V 0.2A 3-Pin S-Mini
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Toshiba | MOSFETs | Si | Small Signal | N | Single | Enhancement | 1 | 200 | 60 | 0.2 | ±20 | 3.5 | 1000@10V | 40 | 55@10V | 600@10V | 3 | S-Mini | SOT | No | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TPC6113,LF(CM
Trans MOSFET P-CH Si 20V 5A 6-Pin VS
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Toshiba | MOSFETs | Si | Power MOSFET | P | Single Quad Drain | Enhancement | 1 | 2200 | 20 | 5 | ±12 | 1.2 | 55@4.5V | 10@5V | 690@10V | 6 | VS | SOT | No | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SC2235-Y(TPE6,F) Trans GP BJT NPN 120V 0.8A 900mW 3-Pin TO-92 Mod T/R |
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Toshiba | GP BJT | NPN | Si | Bipolar Small Signal | Single | 1 | 120 | 120 | 900 | 5 | 0.8 | 120 to 200 | 120@100mA@5V | 1@50mA@500mA | Tape and Reel | 3 | TO-92 Mod | TO | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SSM3J65CTC,L3F
Trans MOSFET P-CH Si 20V 0.7A 3-Pin CST-C T/R
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Von 0,0621 € bis 0,0682 €
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Toshiba | MOSFETs | Si | Small Signal | P | Single | Enhancement | 1 | 500 | 20 | 0.7 | ±10 | 500@4.5V | 48@10V | Tape and Reel | 3 | CST-C | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TK8A25DA,S4X
Trans MOSFET N-CH Si 250V 7.5A 3-Pin(3+Tab) TO-220SIS Tube
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Von 0,3119 € bis 0,3381 €
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Toshiba | MOSFETs | Si | Power MOSFET | N | Single | Enhancement | 1 | 30000 | 250 | 7.5 | ±20 | 500@10V | 16@10V | 16 | 550@100V | 410@10V | Tube | 3 | TO-220SIS | TO | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TK20N60W5,S1VF(S
Trans MOSFET N-CH Si 600V 20A 3-Pin(3+Tab) TO-247 Tube
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Toshiba | MOSFETs | Si | Power MOSFET | N | Single | Enhancement | 1 | 165000 | 600 | 20 | ±30 | 175@10V | 55@10V | 55 | 1800@300V | Tube | 3 | TO-247 | TO | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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2SJ438,Q(J
Trans MOSFET P-CH Si 60V 5A 3-Pin(3+Tab) TO-220NIS
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Toshiba | MOSFETs | Si | Power MOSFET | P | Single | Enhancement | 1 | 25000 | 60 | 5 | ±20 | 190@10V | 22@10V | 630@10V | 3 | TO-220NIS | TO | No | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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RN1116(TE85L,F)
Trans Digital BJT NPN 50V 0.1A 100mW 3-Pin SSM T/R
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Toshiba | Digital-BJT | NPN | Single | 50 | 0.1 | 4.7 | 100 | 0.47 | 50@10mA@5V | 0.3@0.25mA@5mA | Tape and Reel | 3 | SSM | No | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
1SS312(TE85L,F)
Diode PIN Switch 30V 50mA 3-Pin USM T/R
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Toshiba | PIN | Switch | VHF | 30 | Dual Common Cathode | 50 | 0.9@2mA | 0.85@2mA | 1.2@6V | Tape and Reel | 3 | USM | No | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
RN1702,LF
Trans Digital BJT NPN 50V 0.1A 200mW 5-Pin USV T/R Automotive AEC-Q101
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Von 0,0297 € bis 0,0327 €
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Toshiba | Digital-BJT | NPN | Dual Common Emitter | 50 | 0.1 | 10 | 200 | 1 | 50@10mA@5V | 0.3@0.25mA@5mA | Tape and Reel | 5 | USV | SOT | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TK40J60T(Q)
Trans MOSFET N-CH Si 600V 40A 3-Pin(3+Tab) TO-3PN T/R
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Toshiba | MOSFETs | Si | Power MOSFET | N | Single | Enhancement | 1 | 400000 | 600 | 40 | ±30 | 80@10V | 67@10V | 67 | 3900@10V | Tape and Reel | 3 | TO-3PN | TO | No | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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2SC3324-BL(TE85L,F
Trans GP BJT NPN 120V 0.1A 150mW 3-Pin S-Mini T/R
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Toshiba | GP BJT | NPN | Si | Bipolar Small Signal | Single | 1 | 120 | 120 | 150 | 5 | 0.1 | 300 to 500 | 350@2mA@6V | 3 | 0.3@1mA@10mA | 6 | Tape and Reel | 3 | S-Mini | SOT | No | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
1SS424(TPL3,F)
Diode Small Signal Schottky 30V 0.3A 2-Pin ESC T/R
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Toshiba | Gleichrichter | Small Signal Schottky Diode | Single | 30 | 0.3 | 1 | 150 | 0.5@0.2A | 50 | Tape and Reel | 2 | ESC | SOD | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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2SC4915-Y(TE85L,F)
Trans RF BJT NPN 30V 0.02A 100mW 3-Pin SSM T/R
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Toshiba | HF-BJT | NPN | Si | Single | 1 | 30 | 40 | 100 | 4 | 0.02 | 6V/1mA | 50 to 120 | 100@1mA@6V | 550(Typ) | 23 | 5 | Tape and Reel | 3 | SSM | No | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TK28V65W5,LQ
Trans MOSFET N-CH Si 650V 27.6A 5-Pin DFN EP T/R
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Von 2,69 € bis 2,8066 €
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Toshiba | MOSFETs | Si | Power MOSFET | N | Single Triple Source | Enhancement | 1 | 240000 | 650 | 27.6 | ±30 | 140@10V | 90@10V | 3000@300V | Tape and Reel | 5 | DFN EP | DFN | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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10DL2CZ47A(F)
Diode Switching 200V 10A 3-Pin(3+Tab) TO-220NIS
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Toshiba | Gleichrichter | Switching Diode | Dual Common Cathode | 200 | 10 | 55 | 0.98@5A | 10 | 35 | 3 | TO-220NIS | TO | No | No | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| U1ZB30(TE12R,Q) Zener Diode Single 30V 10% 30Ohm 1000mW 2-Pin I-FLAT T/R |
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Toshiba | Zener | Voltage Regulator | Single | 30 | 10% | 10 | 1000 | 10 | 30 | 1000 | Tape and Reel | 2 | I-FLAT | No | Unknown | No | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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2SC4116-BL(TE85L,F
Trans GP BJT NPN 50V 0.15A 100mW 3-Pin USM T/R Automotive AEC-Q101
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Toshiba | GP BJT | NPN | Si | Bipolar Small Signal | Single | 1 | 50 | 60 | 100 | 5 | 0.15 | 300 to 500 | 350@2mA@6V | 80 | 0.25@10mA@100mA | 10 | Tape and Reel | 3 | USM | No | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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GT40RR21(STA1,E,S)
Trans IGBT Chip N-CH 1350V 40A 230W 3-Pin(3+Tab) TO-3PN Magazine
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Toshiba | IGBT-Chip | N | Single | ±25 | 1350 | 40 | 230 | Magazine | 3 | TO-3PN | TO | No | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CUHS20F30,H3F Diode Small Signal Schottky Si 2A 2-Pin US-H T/R |
Von 0,0809 € bis 0,0891 €
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Toshiba | Gleichrichter | Small Signal Schottky Diode | Si | Single | 2 | 10 | 0.47 | 60 | 380(Typ) | Tape and Reel | 2 | US-H | No | No | No | No | EAR99 | No |