Toshiba Diodes, Transistors and Thyristors
| Teile-Nr. | Preis | Bestand | Hersteller | Kategorie | Type | Category | Maximum Rate of Rise of On-State Current - (A/us) | Maximum Rate of Rise of Off-State Voltage - (V/us) | Material | Frequency Band | Channel Type | Repetitive Peak Off-State Current - (mA) | Configuration | Channel Mode | Typical Zener Voltage - (V) | Peak Reverse Repetitive Voltage - (V) | Maximum Reverse Voltage - (V) | Maximum Gate Trigger Voltage - (V) | Maximum Gate Emitter Voltage - (V) | Maximum Collector-Emitter Voltage - (V) | Zener Voltage Tolerance | Surge Current Rating - (A) | Number of Elements per Chip | Maximum Reverse Current - (uA) | Maximum Gate Trigger Current - (mA) | Maximum Continuous Forward Current - (mA) | Maximum Collector-Base Voltage - (V) | Minimum Tuning Ratio | Maximum Holding Current - (mA) | Maximum Drain-Gate Voltage - (V) | Maximum Base-Emitter Voltage - (V) | Typical Input Resistance - (kOhm) | Tuning Ratio Test Condition | Test Current - (mA) | Peak Non-Repetitive Forward Surge Current - (A) | Maximum Series Resistance @ Maximum IF - (Ohm) | Maximum Forward Voltage - (V) | Maximum Drain-Source Voltage - (V) | Maximum Base-Emitter Saturation Voltage - (V) | Typical Resistor Ratio | Repetitive Peak Reverse Voltage - (V) | Peak Reverse Current - (uA) | Maximum Reverse Leakage Current - (uA) | Maximum Gate-Source Voltage - (V) | Maximum DC Collector Current - (A) | Maximum Continuous DC Collector Current - (A) | Operational Bias Conditions | Minimum Diode Capacitance - (pF) | Maximum Gate Threshold Voltage - (V) | Maximum Gate Peak Inverse Voltage - (V) | Peak On-State Voltage - (V) | Maximum Zener Impedance - (Ohm) | Maximum Power Dissipation @ 25C - (mW) | Maximum Diode Capacitance - (pF) | Maximum Continuous Drain Current - (A) | Repetitive Peak Forward Blocking Voltage - (V) | Peak Reverse Recovery Time - (ns) | Minimum DC Current Gain Range | Minimum DC Current Gain | Maximum Drain-Source Resistance - (mOhm) | Typical Gate Charge @ Vgs - (nC) | Rated Average On-State Current - (A) | Maximum Junction Ambient Thermal Resistance | RMS On-State Current - (A) | Maximum Junction Case Thermal Resistance | Typical Input Capacitance - (pF) | Typical Gate Charge @ 10V - (nC) | Maximum Power Dissipation - (mW) | Maximum Collector-Emitter Saturation Voltage - (V) | Typical Output Capacitance - (pF) | Typical Input Capacitance @ Vds - (pF) | Maximum Output Power - (W) | Typical Power Gain - (dB) | Typical 3rd Order Intercept Point - (dBm) | Maximum Transition Frequency - (MHz) | Maximum Noise Figure - (dB) | Maximum Turn-On Time - (ns) | Typical Drain-Source Resistance @ 25°C - (mOhm) | Process Technology | Packaging | Pin Count | Supplier Package | Standard Package Name | CECC Qualified | ESD Protection | Military | AEC Qualified | AEC Qualified Number | Auto motive | P PAP | ECCN Code | SVHC | SVHC Exceeds Threshold |
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2SK2399(TE16L1,NQ)
Trans MOSFET N-CH Si 100V 5A 3-Pin(2+Tab) New PW-Mold T/R
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 100 | ±20 | 5 | 230@10V | 22@10V | 22 | 20000 | 500@10V | Tape and Reel | 3 | New PW-Mold | TO | No | No | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TPN6R303NC,LQ
Trans MOSFET N-CH Si 30V 43A 8-Pin TSON EP Advance T/R
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Von 0,3454 € bis 0,3744 €
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single Quad Drain Triple Source | Enhancement | 1 | 30 | ±20 | 43 | 6.3@10V | 24@10V | 24 | 1900 | 1370@15V | Tape and Reel | 8 | TSON EP Advance | SON | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
CRS10I30A(TE85L,Q)
Diode Schottky 30V 1A 2-Pin S-FLAT T/R
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Toshiba | Gleichrichter | Schottky Diode | Single | 30 | 1 | 20 | 0.39@0.7A | 60 | Tape and Reel | 2 | S-FLAT | No | No | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TK2P90E,RQ
Trans MOSFET N-CH Si 900V 2A 3-Pin(2+Tab) DPAK T/R
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Von 0,4873 € bis 0,5281 €
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 900 | ±30 | 2 | 5900@10V | 12@10V | 80000 | 500@25V | Tape and Reel | 3 | DPAK | TO | No | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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TK2P60D(TE16L1,NV)
Trans MOSFET N-CH Si 600V 2A 3-Pin(2+Tab) New PW-Mold T/R
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 600 | ±30 | 4.4 | 2 | 4300@10V | 7@10V | 60000 | 280@25V | 3 | New PW-Mold | TO | No | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
HN1D03FU,LF
Diode Switching Si 85V 0.1A 6-Pin US T/R Automotive AEC-Q101
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Von 0,0446 € bis 0,049 €
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Toshiba | Gleichrichter | 6 | US | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SC2712-GR(T5L,F,T)
Trans GP BJT NPN 50V 0.15A 150mW 3-Pin S-Mini T/R Automotive AEC-Q101
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Toshiba | GP BJT | NPN | Bipolar Small Signal | Si | Single | 50 | 1 | 60 | 5 | 0.15 | 50 to 120 | 70@2mA@6V | 150 | 0.25@10mA@100mA | 2 | 10 | Tape and Reel | 3 | S-Mini | SOT | No | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
GT50MR21,Q(O
Trans IGBT Chip N-CH 900V 50A 3-Pin(3+Tab) TO-3PN
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Toshiba | IGBT-Chip | 3 | TO-3PN | TO | No | No | No | No | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SK4017(Q)
Trans MOSFET N-CH Si 60V 5A 3-Pin(3+Tab) PW-Mold2
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 60 | ±20 | 5 | 100@10V | 15@10V | 15 | 20000 | 730@10V | 3 | PW-Mold2 | TO | No | Unknown | No | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TRS12E65C,S1Q
Diode Schottky SiC 650V 12A 2-Pin(2+Tab) TO-220-L Tube
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Toshiba | Gleichrichter | Schottky Diode | SiC | Single | 650 | 12 | 1.7 | 90 | Tube | 2 | TO-220-L | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
1AZ24(Q)
Zener Diode Single 24V 10% 30Ohm 1000mW 2-Pin DO-41S
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Toshiba | Zener | Voltage Regulator | Single | 24 | 10% | 10 | 10 | 30 | 1000 | 1000 | 2 | DO-41S | DO | No | Unknown | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TD62783APG(5,J,S)
Trans Darlington NPN/PNP 50V 0.5A 1470mW 18-Pin PDIP
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Toshiba | Darlington BJT | PNP|NPN | Octal Common Emitter | 50 | 8 | 0.5 | 1470 | 1.8@100mA|1.9@225mA|2@350mA | 0.13um | 18 | PDIP | DIP | No | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SSM6N35FU(TE85L,F)
Trans MOSFET N-CH Si 20V 0.18A 6-Pin US T/R
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Toshiba | MOSFETs | Small Signal | Si | N | Dual | Enhancement | 2 | 20 | ±10 | 0.18 | 3000@4V | 200 | 9.5@3V | Tape and Reel | 6 | US | No | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TK12A50D(STA4,X,S)
Trans MOSFET N-CH Si 500V 12A 3-Pin(3+Tab) TO-220SIS
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 500 | ±30 | 4 | 12 | 520@10V | 25@10V | 25 | 45000 | 1350@25V | 3 | TO-220SIS | TO | No | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
XPQR8308QB,LXHQ
Trans MOSFET N-CH Si 80V 350A 9-Pin(8+Tab) L-TOGL Automotive AEC-Q101
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Von 2,0127 € bis 2,1812 €
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single Seven Source | Enhancement | 1 | 80 | ±20 | 350 | 0.83@10V | 305@10V | 750000 | 19000@10V | 9 | L-TOGL | Yes | AEC-Q101 | Yes | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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2SA1923(Q)
Trans GP BJT PNP 400V 0.5A 1000mW 3-Pin(3+Tab) PW-Mold
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Toshiba | GP BJT | PNP | Bipolar Power | Si | Single | 400 | 1 | 400 | 7 | 0.9@10mA@100mA | 0.5 | 120 to 200 | 140@20mA@5V|140@100mA@5V | 1000 | 1@10mA@100mA | 200(Typ) | 3 | PW-Mold | TO | No | No | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TK040Z65Z,S1F
Trans MOSFET N-CH Si 650V 57A 4-Pin(4+Tab) TO-247 Tube
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Von 5,3688 € bis 5,6365 €
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single Dual Drain | Enhancement | 1 | 650 | ±30 | 57 | 40@10V | 105@10V | 105 | 360000 | 6250@300V | 33@10V | Tube | 4 | TO-247 | TO | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
3DL41A
Diode Switching 200V 3A 2-Pin DO-201AD
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Toshiba | Gleichrichter | Switching Diode | Single | 200 | 3 | 88 | 0.98 | 100 | 35 | 2 | DO-201AD | DO | No | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TK28N65W5,S1F(S)
Trans MOSFET N-CH Si 650V 27.6A 3-Pin(3+Tab) TO-247
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 650 | ±30 | 27.6 | 130@10V | 90@10V | 230000 | 3000@300V | 3 | TO-247 | TO | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TPCA8052-H(T2L1,VM
Trans MOSFET N-CH Si 40V 20A 8-Pin SOP Advance T/R
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single Quad Drain Triple Source | Enhancement | 1 | 40 | ±20 | 2.3 | 20 | 11.3@10V | 13@5V|25@10V | 78.1 | 4.17 | 25 | 2800 | 280 | 1620@10V | 7.2@10V|9.1@4.5V | Tape and Reel | 8 | SOP Advance | SO | No | No | No | No | No | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
CUHZ12V,H3F
Zener Diode Single 12V 5% 30Ohm 1200mW 2-Pin US-H T/R
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Von 0,0742 € bis 0,0816 €
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Toshiba | Zener | Voltage Regulator | Single | 12 | 5% | 10 | 0.1 | 30 | 1200 | 1200 | Tape and Reel | 2 | US-H | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SA1761(F) Trans GP BJT PNP 50V 3A 900mW 3-Pin TO-92 Mod |
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Toshiba | GP BJT | PNP | Bipolar Power | Si | Single | 50 | 1 | 60 | 6 | 1.2@75mA@1.5A | 3 | 30 to 50|50 to 120|120 to 200 | 120@100mA@2V|40@2A@2V | 900 | 0.5@75mA@1.5A | 3 | TO-92 Mod | TO | No | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
CMS05(TE12L,Q)
Diode Schottky 30V 5A 2-Pin M-FLAT T/R
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Toshiba | Gleichrichter | Schottky Diode | Single | 30 | 5 | 70 | 0.45 | 800 | Tape and Reel | 2 | M-FLAT | No | No | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
1SV217(TH2,F,T)
Varactor Diode Single 30V 33pF 2-Pin USC
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Toshiba | Varaktors | Tuner | Single | 30 | 0.01 | 11.5 | 2V/25V | 33@2V | 2 | USC | SOD | No | No | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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CUS15S40,H3F(T
Diode Small Signal Schottky 40V 1.5A 2-Pin USC T/R
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Toshiba | Gleichrichter | Small Signal Schottky Diode | Single | 40 | 1.5 | 5 | 0.55 | 200 | Tape and Reel | 2 | USC | SOD | No | No | No | No | EAR99 | No |