Toshiba Diodes, Transistors and Thyristors
| Teile-Nr. | Preis | Bestand | Hersteller | Kategorie | Type | Maximum Rate of Rise of Off-State Voltage - (V/us) | Category | Maximum Rate of Rise of On-State Current - (A/us) | Material | Frequency Band | Channel Type | Maximum Gate Trigger Voltage - (V) | Configuration | Channel Mode | Typical Zener Voltage - (V) | Repetitive Peak Reverse Voltage - (V) | Peak Reverse Repetitive Voltage - (V) | Maximum Reverse Voltage - (V) | Maximum Gate Trigger Current - (mA) | Maximum Gate Emitter Voltage - (V) | Maximum Collector-Emitter Voltage - (V) | Zener Voltage Tolerance | Surge Current Rating - (A) | Maximum Reverse Current - (uA) | Maximum Continuous Forward Current - (A) | Maximum Collector-Base Voltage - (V) | Number of Elements per Chip | Minimum Tuning Ratio | Maximum Holding Current - (mA) | Maximum Drain-Gate Voltage - (V) | Maximum Continuous DC Collector Current - (A) | Maximum Base-Emitter Voltage - (V) | Typical Input Resistance - (kOhm) | Tuning Ratio Test Condition | Test Current - (mA) | Peak Non-Repetitive Forward Surge Current - (A) | Maximum Series Resistance @ Maximum IF - (Ohm) | Maximum Forward Voltage - (V) | Maximum Drain-Source Voltage - (V) | Maximum Base-Emitter Saturation Voltage - (V) | Typical Resistor Ratio | Peak Reverse Current - (uA) | Maximum Reverse Leakage Current - (uA) | Maximum Gate-Source Voltage - (V) | Maximum DC Collector Current - (A) | Peak On-State Voltage - (V) | Operational Bias Conditions | Minimum Diode Capacitance - (pF) | Maximum Junction Ambient Thermal Resistance | Maximum Gate Threshold Voltage - (V) | Maximum Gate Peak Inverse Voltage - (V) | Maximum Zener Impedance - (Ohm) | Maximum Power Dissipation - (mW) | Maximum Power Dissipation @ 25C - (mW) | Maximum Diode Capacitance - (pF) | Maximum Continuous Drain Current - (A) | RMS On-State Current - (A) | Repetitive Peak Forward Blocking Voltage - (V) | Rated Average On-State Current - (A) | Peak Reverse Recovery Time - (ns) | Minimum DC Current Gain Range | Minimum DC Current Gain | Maximum Drain-Source Resistance - (mOhm) | Typical Gate Charge @ Vgs - (nC) | Repetitive Peak Off-State Current - (mA) | Maximum Junction Case Thermal Resistance | Typical Gate Charge @ 10V - (nC) | Typical Output Capacitance - (pF) | Typical Input Capacitance @ Vds - (pF) | Typical Power Gain - (dB) | Maximum Output Power - (W) | Maximum Collector-Emitter Saturation Voltage - (V) | Maximum Frequency - (MHz) | Typical 3rd Order Intercept Point - (dBm) | Maximum Transition Frequency - (MHz) | Maximum Noise Figure - (dB) | Typical Drain-Source Resistance @ 25°C - (mOhm) | Process Technology | Packaging | Pin Count | Supplier Package | Standard Package Name | CECC Qualified | ESD Protection | Military | AEC Qualified | AEC Qualified Number | Auto motive | P PAP | ECCN Code | SVHC | SVHC Exceeds Threshold |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
2SC4684(Q)
Trans GP BJT NPN 20V 5A 1000mW 3-Pin(2+Tab) New PW-Mold
|
|
Toshiba | GP BJT | NPN | Bipolar Power | Si | Single | 20 | 50 | 1 | 8 | 5 | 1000 | 200 to 300|300 to 500|500 to 3600 | 800@0.5A@2V|250@4A@2V | 0.5@40mA@4A | 3 | New PW-Mold | TO | No | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
CMH05A(TE12L,Q)
Diode Switching 400V 1A 2-Pin M-FLAT T/R
|
|
Toshiba | Gleichrichter | Switching Diode | Single | 400 | 1 | 10 | 1.8 | 10 | 35 | Tape and Reel | 2 | M-FLAT | No | No | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
CUZ6V2,H3F
Zener Diode Single 6.2V 6% 30Ohm 600mW 2-Pin USC T/R
|
0,0258 €
pro Stück
|
Toshiba | Zener | Voltage Regulator | Single | 6.2 | 6% | 5 | 2.5 | 30 | 600 | 600 | 105(Typ) | Tape and Reel | 2 | USC | SOD | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
CBS10F40,L3F
Diode Small Signal Schottky Si 1A 2-Pin CST-B T/R
|
Von 0,0526 € bis 0,0579 €
pro Stück
|
Toshiba | Gleichrichter | 2 | CST-B | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SSM3K15AMFV,L3F(B
Trans MOSFET N-CH Si 30V 0.1A 3-Pin VESM
|
|
Toshiba | MOSFETs | Small Signal | Si | N | Single | Enhancement | 1 | 30 | ±20 | 150 | 0.1 | 3600@4V | 13.5@3V | 3 | VESM | SOT | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SC3325-Y,LF
Trans GP BJT NPN 50V 0.5A 200mW 3-Pin S-Mini T/R Automotive AEC-Q101
|
Von 0,056 € bis 0,0568 €
pro Stück
|
Toshiba | GP BJT | NPN | Bipolar Small Signal | Si | Single | 50 | 50 | 1 | 5 | 0.5 | 200 | 30 to 50|50 to 120|120 to 200 | 120@100mA@1V|40@400mA@6V | 0.25@10mA@100mA | Tape and Reel | 3 | S-Mini | SOT | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
2SK208-Y(TE85R,F)
Trans JFET N-CH Si 3-Pin S-Mini T/R
|
|
Toshiba | JFETs | Si | N | Single | 1 | -50 | 100 | 0.5(Typ) | Tape and Reel | 3 | S-Mini | SOT | No | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SK2789(SM,Q)
Trans MOSFET N-CH Si 100V 27A 3-Pin(2+Tab) TO-220SM
|
|
Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 100 | ±20 | 60000 | 27 | 85@10V | 50@10V | 50 | 1100@10V | 3 | TO-220SM | TO | No | No | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
RN4906(TE85L,F)
Trans Digital BJT NPN/PNP 50V 0.1A 200mW 6-Pin US T/R
|
|
Toshiba | Digital-BJT | NPN|PNP | Dual | 50 | 0.1 | 4.7 | 0.1 | 200 | 80@10mA@5V | 0.3@0.25mA@5mA | Tape and Reel | 6 | US | No | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TRS2E65H,S1Q
Diode Schottky SiC 650V 9A 2-Pin(2+Tab) TO-220 Stick
|
Von 0,6611 € bis 0,7165 €
pro Stück
|
Toshiba | Gleichrichter | Schottky Diode | SiC | Single | 650 | 9 | 120 | 1.35@2A | 40 | 48000 | Stick | 2 | TO-220 | TO | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TK17N65W,S1F
Trans MOSFET N-CH Si 650V 17.3A 3-Pin(3+Tab) TO-247 Tube
|
Von 1,9099 € bis 2,0905 €
pro Stück
|
Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 650 | ±30 | 3.5 | 165000 | 17.3 | 200@10V | 45@10V | 45 | 1800@300V | Tube | 3 | TO-247 | TO | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SC5027(F)
Trans GP BJT NPN 300V 0.1A 1300mW 3-Pin TPS
|
|
Toshiba | GP BJT | NPN | Bipolar Power | Si | Single | 300 | 300 | 1 | 7 | 1@1mA@10mA | 0.1 | 1300 | 30 to 50|2 to 30 | 20@4mA@10V|30@20mA@10V | 1@1mA@10mA | 3 | TPS | No | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TK65G10N1,RQ(S
Trans MOSFET N-CH Si 100V 136A 3-Pin(2+Tab) D2PAK T/R
|
|
Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 100 | ±20 | 4 | 156000 | 136 | 4.5@10V | 81@10V | 81 | 5400@50V | Tape and Reel | 3 | D2PAK | TO | No | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
2SK209-BL(TE85L,F)
Trans JFET N-CH Si 3-Pin S-Mini T/R
|
|
Toshiba | JFETs | Si | N | Single | -50 | 150 | 5(Typ) | Tape and Reel | 3 | S-Mini | SOT | No | Unknown | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
TK65S04K3L(T6L1,NQ
Trans MOSFET N-CH Si 40V 65A Automotive AEC-Q101 3-Pin(2+Tab) DPAK+ T/R
|
|
Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 40 | ±20 | 88000 | 65 | 4.5@10V | 63@10V | 63 | 2800@10V | Tape and Reel | 3 | DPAK+ | TO | No | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SA966-O(TPE6,F)
Trans GP BJT PNP 30V 1.5A 900mW 3-Pin TO-92 Mod T/R
|
|
Toshiba | GP BJT | PNP | Bipolar Small Signal | Si | Single | 30 | 30 | 1 | 5 | 1.5 | 900 | 50 to 120 | 100@500mA@2V | 2@0.03A@1.5A | Tape and Reel | 3 | TO-92 Mod | TO | No | No | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TK063Z60Z1,S1F
Trans MOSFET N-CH Si 600V 37A
|
|
Toshiba | MOSFETs | Power MOSFET | Si | N | Single Dual Source | Enhancement | 1 | 600 | ±30 | 242000 | 37 | 63@10V | 56@10V | 56 | 3200@300V | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TK210V65Z,LQ
Trans MOSFET N-CH Si 650V 15A 5-Pin DFN EP T/R
|
|
Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 650 | ±30 | 130000 | 15 | 210@10V | 25@10V | 1370@300V | Tape and Reel | 5 | DFN EP | DFN | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SA1015(L)-GR(F)
Trans GP BJT PNP 50V 0.15A 400mW 3-Pin TO-92
|
|
Toshiba | GP BJT | PNP | Bipolar Small Signal | Si | Single | 50 | 50 | 1 | 5 | 1.1@10mA@100mA | 0.15 | 400 | 200 to 300 | 200@2mA@6V | 0.3@10mA@100mA | 3 | TO-92 | TO | No | No | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
RN1906(TE85L,F)
Trans Digital BJT NPN 50V 0.1A 200mW 6-Pin US T/R Automotive AEC-Q101
|
|
Toshiba | Digital-BJT | NPN | Dual | 50 | 0.1 | 4.7 | 0.1 | 200 | 80@10mA@5V | 0.3@0.25mA@5mA | Tape and Reel | 6 | US | No | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
1SV283(TPH3,F)
Diode VAR Cap Single 34V 29pF 2-Pin ESC T/R
|
|
Toshiba | Varaktors | Tuner | Single | 34 | 0.01 | 11 | 2V/25V | 29@2V | Tape and Reel | 2 | ESC | SOD | No | No | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SSM6K781G,LF
Trans MOSFET N-CH Si 12V 7A 6-Pin WCSP-C T/R
|
Von 0,132 € bis 0,1431 €
pro Stück
|
Toshiba | MOSFETs | Power MOSFET | Si | N | Single Triple Drain Dual Source | Enhancement | 1 | 12 | ±8 | 1 | 2900 | 7 | 18@4.5V | 5.4@4.5V | 600@6V | Tape and Reel | 6 | WCSP-C | CSP | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
1SS187,LF(B
Diode Switching Si 85V 0.1A 3-Pin S-Mini
|
|
Toshiba | Gleichrichter | Switching Diode | Si | Single | 85 | 0.1 | 2 | 1.2 | 0.5 | 150 | 4 | 4 | 3 | S-Mini | SOT | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SK2914(F)
Trans MOSFET N-CH Si 250V 7.5A 3-Pin(3+Tab) TO-220AB
|
|
Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 250 | ±20 | 20000 | 7.5 | 500@10V | 20@10V | 20 | 700@10V | 3 | TO-220AB | TO | No | No | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SK2789(Q) Trans MOSFET N-CH Si 100V 27A 3-Pin(3+Tab) |
|
Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 100 | ±20 | 60000 | 27 | 85@10V | 50@10V | 50 | 1100@10V | 3 | No | No | No | No | No | EAR99 |