Toshiba Diodes, Transistors and Thyristors
| Teile-Nr. | Preis | Bestand | Hersteller | Kategorie | Type | Category | Maximum Rate of Rise of On-State Current - (A/us) | Maximum Rate of Rise of Off-State Voltage - (V/us) | Material | Frequency Band | Channel Type | Repetitive Peak Off-State Current - (mA) | Configuration | Channel Mode | Typical Zener Voltage - (V) | Peak Reverse Repetitive Voltage - (V) | Maximum Reverse Voltage - (V) | Maximum Gate Trigger Voltage - (V) | Maximum Gate Emitter Voltage - (V) | Maximum Collector-Emitter Voltage - (V) | Zener Voltage Tolerance | Surge Current Rating - (A) | Number of Elements per Chip | Maximum Reverse Current - (uA) | Maximum Gate Trigger Current - (mA) | Maximum Continuous Forward Current - (mA) | Maximum Collector-Base Voltage - (V) | Minimum Tuning Ratio | Maximum Holding Current - (mA) | Maximum Drain-Gate Voltage - (V) | Maximum Base-Emitter Voltage - (V) | Typical Input Resistance - (kOhm) | Tuning Ratio Test Condition | Test Current - (mA) | Peak Non-Repetitive Forward Surge Current - (A) | Maximum Series Resistance @ Maximum IF - (Ohm) | Maximum Forward Voltage - (V) | Maximum Drain-Source Voltage - (V) | Maximum Base-Emitter Saturation Voltage - (V) | Typical Resistor Ratio | Repetitive Peak Reverse Voltage - (V) | Peak Reverse Current - (uA) | Maximum Reverse Leakage Current - (uA) | Maximum Gate-Source Voltage - (V) | Maximum DC Collector Current - (A) | Maximum Continuous DC Collector Current - (A) | Operational Bias Conditions | Minimum Diode Capacitance - (pF) | Maximum Gate Threshold Voltage - (V) | Maximum Gate Peak Inverse Voltage - (V) | Peak On-State Voltage - (V) | Maximum Zener Impedance - (Ohm) | Maximum Power Dissipation @ 25C - (mW) | Maximum Diode Capacitance - (pF) | Maximum Continuous Drain Current - (A) | Repetitive Peak Forward Blocking Voltage - (V) | Peak Reverse Recovery Time - (ns) | Minimum DC Current Gain Range | Minimum DC Current Gain | Maximum Drain-Source Resistance - (mOhm) | Typical Gate Charge @ Vgs - (nC) | Rated Average On-State Current - (A) | Maximum Junction Ambient Thermal Resistance | RMS On-State Current - (A) | Maximum Junction Case Thermal Resistance | Typical Input Capacitance - (pF) | Typical Gate Charge @ 10V - (nC) | Maximum Power Dissipation - (mW) | Maximum Collector-Emitter Saturation Voltage - (V) | Typical Output Capacitance - (pF) | Typical Input Capacitance @ Vds - (pF) | Maximum Output Power - (W) | Typical Power Gain - (dB) | Typical 3rd Order Intercept Point - (dBm) | Maximum Transition Frequency - (MHz) | Maximum Noise Figure - (dB) | Maximum Turn-On Time - (ns) | Typical Drain-Source Resistance @ 25°C - (mOhm) | Process Technology | Packaging | Pin Count | Supplier Package | Standard Package Name | CECC Qualified | ESD Protection | Military | AEC Qualified | AEC Qualified Number | Auto motive | P PAP | ECCN Code | SVHC | SVHC Exceeds Threshold |
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Meist Gesucht
1SV229TPH3F
Varactor Diode Single 15V 14pF 2-Pin USC T/R
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Bestand
2.329
Von 0,1066 € bis 0,1742 €
pro Stück
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Toshiba | Varaktors | VCO | UHF | Single | 15 | 0.003 | 2 | 2V/10V | 14@2V | Tape and Reel | 2 | USC | SOD | No | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SSM3K361TU,LF
Trans MOSFET N-CH Si 100V 3.5A 3-Pin UFM T/R Automotive AEC-Q101
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Bestand
3.000
0,1242 €
pro Stück
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 100 | ±20 | 3.5 | 69@10V | 3.2@4.5V | 1800 | 430@15V | Tape and Reel | 3 | UFM | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TK25A60X,S5X
Trans MOSFET N-CH Si 600V 25A 3-Pin(3+Tab) TO-220SIS Tube
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Bestand
187
1,4342 €
pro Stück
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 600 | ±30 | 3.5 | 25 | 125@10V | 40@10V | 40 | 45000 | 2400@300V | Tube | 3 | TO-220SIS | TO | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TPN11003NL,LQ(S
Trans MOSFET N-CH Si 30V 31A 8-Pin TSON Advance T/R
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Bestand
1.211
Von 0,0981 € bis 0,1083 €
pro Stück
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single Quad Drain Triple Source | Enhancement | 1 | 30 | ±20 | 2.3 | 31 | 11@10V | 3.3@4.5V|7.5@10V | 7.5 | 19000 | 510@15V | 8 | TSON Advance | SON | Unknown | Unknown | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
RN1104MFV,L3F
Trans Digital BJT NPN 50V 0.1A 150mW 3-Pin VESM T/R Automotive AEC-Q101
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Bestand
711
0,012 €
pro Stück
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Toshiba | Digital-BJT | NPN | Single | 50 | 47 | 1 | 0.1 | 80@10mA@5V | 150 | 0.3@0.5mA@5mA | Tape and Reel | 3 | VESM | SOT | No | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
CSLZ6V8,L3F | 6.8V ZNR DIODE SOD-962 OVP
Diode Zener Single 6.8V 6% 400mW 2-Pin SL T/R
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Bestand
7.340
Von 0,0083 € bis 0,041 €
pro Stück
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Toshiba | Zener | Voltage Regulator | Single | 6.8 | 6% | 5 | 0.5 | 30 | 400 | 400 | Tape and Reel | 2 | SL | SOD | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TPH6R30ANL,L1Q(M
Trans MOSFET N-CH Si 100V 66A 8-Pin SOP Advance T/R
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Bestand
920
Von 0,4818 € bis 0,9706 €
pro Stück
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single Quad Drain Triple Source | Enhancement | 1 | 100 | ±20 | 66 | 6300@10V | 27@4.5V|55@10V | 2500 | 3300@50V | 8 | SOP Advance | SO | No | No | No | No | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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TK380A60Y,S4X
Trans MOSFET N-CH Si 600V 9.7A 3-Pin(3+Tab) TO-220SIS Tube
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Bestand
4
0,3985 €
pro Stück
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 600 | ±30 | 4 | 9.7 | 380@10V | 20@10V | 20 | 30000 | 590@300V | Tube | 3 | TO-220SIS | TO | No | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TPCC8104,L1Q(CM
Trans MOSFET P-CH Si 30V 20A 8-Pin TSON EP Advance T/R
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Bestand
1.953
Von 0,1881 € bis 0,3596 €
pro Stück
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Toshiba | MOSFETs | Power MOSFET | Si | P | Single Quad Drain Triple Source | Enhancement | 1 | 30 | 20 | 20 | 8.8@10V | 58@10V | 1900 | 2260@10V | Tape and Reel | 8 | TSON EP Advance | SON | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SSM3K16FU,LF
Trans MOSFET N-CH Si 20V 0.1A 3-Pin USM T/R Automotive AEC-Q101
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Bestand
87
Von 0,0373 € bis 0,1185 €
pro Stück
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Toshiba | MOSFETs | Small Signal | Si | N | Single | Enhancement | 1 | 20 | ±10 | 0.1 | 3000@4V | 150 | 9.3@3V | Tape and Reel | 3 | USM | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TW015Z65C,S1F
Trans MOSFET N-CH SiC 650V 100A 4-Pin(4+Tab) TO-247 Tube
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Bestand
30
26,7344 €
pro Stück
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Toshiba | MOSFETs | Power MOSFET | SiC | N | Single Dual Source | Enhancement | 1 | 650 | 25 | 100 | 22@18V | 128@18V | 342000 | 4850@400V | Tube | 4 | TO-247 | TO | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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TK9A90E,S4X(S
Trans MOSFET N-CH Si 900V 9A 3-Pin(3+Tab) TO-220SIS Tube
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Bestand
20
Von 1,4039 € bis 2,8944 €
pro Stück
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 900 | ±30 | 4 | 9 | 1300@10V | 46@10V | 46 | 50000 | 2000@25V | Tube | 3 | TO-220SIS | TO | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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CUZ20V,H3F
Zener Diode Single 20V 6% 70Ohm 600mW 2-Pin USC T/R
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Bestand
3.910
0,0259 €
pro Stück
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Toshiba | Zener | Voltage Regulator | Single | 20 | 6% | 5 | 0.1 | 70 | 600 | 29(Typ) | 600 | Tape and Reel | 2 | USC | SOD | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SC5200N(S1,E,S)
Trans GP BJT NPN 230V 15A 150000mW 3-Pin(3+Tab) TO-3PN Magazine
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Bestand
12
Von 1,6812 € bis 2,9377 €
pro Stück
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Toshiba | GP BJT | NPN | Bipolar Power | Si | Single | 230 | 1 | 230 | 5 | 15 | 50 to 120|30 to 50 | 80@1A@5V|35@7A@5V | 0.83 | 150000 | 3@0.8A@8A | 200 | Magazine | 3 | TO-3PN | TO | No | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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GT15J341,S4X(S
Trans IGBT Chip N-CH 600V 15A 30W 3-Pin(3+Tab) TO-220SIS Magazine
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Bestand
50
Von 0,9966 € bis 1,6812 €
pro Stück
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Toshiba | IGBT-Chip | N | Single | ±25 | 600 | 15 | 30 | Magazine | 3 | TO-220SIS | TO | No | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TK1Q90A(Q) Trans MOSFET N-CH Si 900V 1A 3-Pin(3+Tab) New PW-Mold2 Bag |
Bestand
340
0,9619 €
pro Stück
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 900 | ±30 | 1 | 9000@10V | 13@10V | 13 | 20000 | 320@25V | Bag | 3 | New PW-Mold2 | No | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TTC015B,Q(S)
Trans GP BJT NPN 80V 2A 1500mW 3-Pin TO-126N Sack
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Bestand
39
0,3475 €
pro Stück
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Toshiba | GP BJT | NPN | Bipolar Power | Si | Single | 80 | 1 | 160 | 7 | 1.5@100mA@1A | 2 | 50 to 120 | 80@1mA@2V|100@0.5A@2V|60@1A@2V | 1500 | 0.3@5mA@0.5A|0.5@100mA@1A | Sack | 3 | TO-126N | No | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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TPN2R203NC,L1Q
Trans MOSFET N-CH Si 30V 100A 8-Pin TSON EP Advance T/R
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Bestand
235.000
0,1764 €
pro Stück
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single Quad Drain Triple Source | Enhancement | 1 | 30 | ±20 | 100 | 2.2@10V | 34@10V | 34 | 1900 | 2230@15V | Tape and Reel | 8 | TSON EP Advance | SON | No | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TW027N65C,S1F(S
Trans MOSFET N-CH SiC 650V 58A 3-Pin(3+Tab) TO-247
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Bestand
20
Von 23,9179 € bis 31,4573 €
pro Stück
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Toshiba | MOSFETs | Power MOSFET | SiC | N | Single | Enhancement | 1 | 650 | 25 | 58 | 37@18V | 65@18V | 156000 | 2288@400V | 3 | TO-247 | TO | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
RN1705JE(TE85L,F)
Trans Digital BJT NPN 50V 0.1A 100mW 5-Pin ESV T/R
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Bestand
2.760
Von 0,0962 € bis 0,2002 €
pro Stück
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Toshiba | Digital-BJT | NPN | Dual Common Emitter | 50 | 2.2 | 0.0468 | 0.1 | 80@10mA@5V | 100 | 0.3@0.25mA@5mA | Tape and Reel | 5 | ESV | SOT | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TK31N60W5,S1VF(S
Trans MOSFET N-CH Si 600V 30.8A 3-Pin(3+Tab) TO-247
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Bestand
30
Von 2,6864 € bis 3,891 €
pro Stück
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 600 | ±30 | 4.5 | 30.8 | 99@10V | 105@10V | 105 | 230000 | 3000@300V | DTMOSIV | 3 | TO-247 | TO | No | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TBAT54,LM(T
Diode Small Signal Schottky 35V 0.2A 3-Pin SOT-23 T/R
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Bestand
2.945
Von 0,0404 € bis 0,0718 €
pro Stück
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Toshiba | Gleichrichter | Small Signal Schottky Diode | Single | 35 | 0.2 | 1 | 0.58@0.1A | 2 | 1.5 | 320 | Tape and Reel | 3 | SOT-23 | SOT | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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TK090A65Z,S4X(S
Trans MOSFET N-CH Si 650V 30A 3-Pin(3+Tab) TO-220SIS
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Bestand
4
3,0331 €
pro Stück
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 650 | ±30 | 30 | 90@10V | 47@10V | 45000 | 2780@300V | 3 | TO-220SIS | TO | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
RN2421(TE85L,F)
Trans Digital BJT PNP 50V 0.8A 200mW 3-Pin S-Mini T/R
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Bestand
2.180
Von 0,1456 € bis 0,3276 €
pro Stück
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Toshiba | Digital-BJT | PNP | Single | 50 | 1 | 1 | 0.8 | 60@100mA@1V | 200 | 0.25@2mA@50mA | Tape and Reel | 3 | S-Mini | SOT | No | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
CRH01(T5L,TEMQ)
Diode Switching 200V 1A 2-Pin S-FLAT T/R
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Bestand
2.011
Von 0,0368 € bis 0,1005 €
pro Stück
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Toshiba | Gleichrichter | Switching Diode | Single | 200 | 1 | 15 | 0.98 | 10 | 35 | Tape and Reel | 2 | S-FLAT | No | No | No | No | No | EAR99 |