Toshiba Diodes, Transistors and Thyristors
| Teile-Nr. | Preis | Bestand | Hersteller | Kategorie | Type | Category | Maximum Rate of Rise of On-State Current - (A/us) | Maximum Rate of Rise of Off-State Voltage - (V/us) | Material | Frequency Band | Channel Type | Repetitive Peak Off-State Current - (mA) | Configuration | Channel Mode | Typical Zener Voltage - (V) | Peak Reverse Repetitive Voltage - (V) | Maximum Reverse Voltage - (V) | Maximum Gate Trigger Voltage - (V) | Maximum Gate Emitter Voltage - (V) | Maximum Collector-Emitter Voltage - (V) | Zener Voltage Tolerance | Surge Current Rating - (A) | Number of Elements per Chip | Maximum Reverse Current - (uA) | Maximum Gate Trigger Current - (mA) | Maximum Continuous Forward Current - (mA) | Maximum Collector-Base Voltage - (V) | Minimum Tuning Ratio | Maximum Holding Current - (mA) | Maximum Drain-Gate Voltage - (V) | Maximum Base-Emitter Voltage - (V) | Typical Input Resistance - (kOhm) | Tuning Ratio Test Condition | Test Current - (mA) | Peak Non-Repetitive Forward Surge Current - (A) | Maximum Series Resistance @ Maximum IF - (Ohm) | Maximum Forward Voltage - (V) | Maximum Drain-Source Voltage - (V) | Maximum Base-Emitter Saturation Voltage - (V) | Typical Resistor Ratio | Repetitive Peak Reverse Voltage - (V) | Peak Reverse Current - (uA) | Maximum Reverse Leakage Current - (uA) | Maximum Gate-Source Voltage - (V) | Maximum DC Collector Current - (A) | Maximum Continuous DC Collector Current - (A) | Operational Bias Conditions | Minimum Diode Capacitance - (pF) | Maximum Gate Threshold Voltage - (V) | Maximum Gate Peak Inverse Voltage - (V) | Peak On-State Voltage - (V) | Maximum Zener Impedance - (Ohm) | Maximum Power Dissipation @ 25C - (mW) | Maximum Diode Capacitance - (pF) | Maximum Continuous Drain Current - (A) | Repetitive Peak Forward Blocking Voltage - (V) | Peak Reverse Recovery Time - (ns) | Minimum DC Current Gain Range | Minimum DC Current Gain | Maximum Drain-Source Resistance - (mOhm) | Typical Gate Charge @ Vgs - (nC) | Rated Average On-State Current - (A) | Maximum Junction Ambient Thermal Resistance | RMS On-State Current - (A) | Maximum Junction Case Thermal Resistance | Typical Input Capacitance - (pF) | Typical Gate Charge @ 10V - (nC) | Maximum Power Dissipation - (mW) | Maximum Collector-Emitter Saturation Voltage - (V) | Typical Output Capacitance - (pF) | Typical Input Capacitance @ Vds - (pF) | Maximum Output Power - (W) | Typical Power Gain - (dB) | Typical 3rd Order Intercept Point - (dBm) | Maximum Transition Frequency - (MHz) | Maximum Noise Figure - (dB) | Maximum Turn-On Time - (ns) | Typical Drain-Source Resistance @ 25°C - (mOhm) | Process Technology | Packaging | Pin Count | Supplier Package | Standard Package Name | CECC Qualified | ESD Protection | Military | AEC Qualified | AEC Qualified Number | Auto motive | P PAP | ECCN Code | SVHC | SVHC Exceeds Threshold |
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2SC4116-BL(TE85L,F
Trans GP BJT NPN 50V 0.15A 100mW 3-Pin USM T/R Automotive AEC-Q101
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Toshiba | GP BJT | NPN | Bipolar Small Signal | Si | Single | 50 | 1 | 60 | 5 | 0.15 | 300 to 500 | 350@2mA@6V | 100 | 0.25@10mA@100mA | 80 | 10 | Tape and Reel | 3 | USM | No | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
GT40RR21(STA1,E,S)
Trans IGBT Chip N-CH 1350V 40A 230W 3-Pin(3+Tab) TO-3PN Magazine
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Toshiba | IGBT-Chip | N | Single | ±25 | 1350 | 40 | 230 | Magazine | 3 | TO-3PN | TO | No | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CUHS20F30,H3F Diode Small Signal Schottky Si 2A 2-Pin US-H T/R |
Von 0,0809 € bis 0,0891 €
pro Stück
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Toshiba | Gleichrichter | Small Signal Schottky Diode | Si | Single | 2 | 10 | 0.47 | 60 | 380(Typ) | Tape and Reel | 2 | US-H | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SSM3K318R,LF(B
Trans MOSFET N-CH Si 60V 2.5A 3-Pin SOT-23F
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 60 | ±20 | 2.5 | 107@10V | 7@10V | 2000 | 235@30V | 3 | SOT-23F | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SC3324-BL(TE85L,F
Trans GP BJT NPN 120V 0.1A 150mW 3-Pin S-Mini T/R
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Toshiba | GP BJT | NPN | Bipolar Small Signal | Si | Single | 120 | 1 | 120 | 5 | 0.1 | 300 to 500 | 350@2mA@6V | 150 | 0.3@1mA@10mA | 3 | 6 | Tape and Reel | 3 | S-Mini | SOT | No | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1SS379,LF(B Diode Switching 85V 0.1A 3-Pin S-Mini |
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Toshiba | Gleichrichter | 3 | S-Mini | SOT | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SSM6L40TU,LF
Trans MOSFET N/P-CH Si 30V 1.6A/1.4A 6-Pin UF T/R Automotive AEC-Q101
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Von 0,108 € bis 0,1188 €
pro Stück
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Toshiba | MOSFETs | Small Signal | Si | N|P | Dual | Enhancement | 2 | 30 | ±20 | 1.6@N Channel|1.4@P Channel | 122@10V@N Channel|226@10V@P Channel | 5.1@10V@N Channel|2.9@10V@P Channel | 5.1@N Channel|2.9@P Channel | 500 | 180@15V@N Channel|120@15V@P Channel | Tape and Reel | 6 | UF | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
1SV308(TPH3,F)
Diode PIN Switch 30V 50mA 2-Pin ESC T/R
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Toshiba | PIN | Switch | VHF | Single | 30 | 50 | 1.5@10mA | 1 | 0.5@1V | Tape and Reel | 2 | ESC | SOD | No | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
1SS403(TPH3,F)
Diode Switching Si 250V 0.1A 2-Pin USC T/R Automotive AEC-Q101
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Toshiba | Gleichrichter | Switching Diode | Si | Single | 250 | 0.1 | 2 | 1.2 | 1 | 3 | 60 | 200 | Tape and Reel | 2 | USC | SOD | No | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SA1213-O(TE12L,CF
Trans GP BJT PNP 50V 2A 1000mW 4-Pin(3+Tab) PW-Mini T/R
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Toshiba | GP BJT | PNP | Bipolar Small Signal | Si | Single Dual Collector | 50 | 1 | 50 | 5 | 1.2@0.05A@1A | 2 | 50 to 120 | 70@0.5A@2V | 1000 | 0.5@0.05A@1A | 100(Typ) | Tape and Reel | 4 | PW-Mini | SOT | No | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TPHR9203PL1,LQ
Trans MOSFET N-CH Si 30V 320A 8-Pin SOP Advance(N) T/R
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single Quad Drain Triple Source | Enhancement | 1 | 30 | ±20 | 320 | 0.92@10V | 38@4.5V|81@10V | 81 | 3000 | 5800@15V | Tape and Reel | 8 | SOP Advance(N) | SO | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TPH4R50ANH,L1Q(M
Trans MOSFET N-CH Si 100V 93A 8-Pin SOP Advance T/R
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single Quad Drain Triple Source | Enhancement | 1 | 100 | ±20 | 4 | 93 | 4.5@10V | 58@10V | 58 | 2800 | 4000@50V | Tape and Reel | 8 | SOP Advance | SO | No | No | No | No | No | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SSM3K44MFV,L3F
Trans MOSFET N-CH Si 30V 0.1A 3-Pin VESM T/R Automotive AEC-Q101
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Von 0,0243 € bis 0,0267 €
pro Stück
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Toshiba | MOSFETs | Small Signal | Si | N | Single | Enhancement | 1 | 30 | ±20 | 1.5 | 0.1 | 4000@4V | 150 | 8.5@3V | Tape and Reel | 3 | VESM | SOT | No | Yes | AEC-Q101 | Yes | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SSM6P39TU,LF
Trans MOSFET P-CH Si 20V 1.5A 6-Pin UF T/R Automotive AEC-Q101
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Von 0,1066 € bis 0,1172 €
pro Stück
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Toshiba | MOSFETs | Small Signal | Si | P | Dual | Enhancement | 2 | 20 | ±8 | 1 | 1.5 | 213@4V | 6.4@4V | 500 | 250@10V | Tape and Reel | 6 | UF | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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2SA1163-BL,LF
Trans GP BJT PNP 120V 0.1A 150mW 3-Pin S-Mini T/R Automotive AEC-Q101
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Von 0,0324 € bis 0,0356 €
pro Stück
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Toshiba | GP BJT | PNP | Bipolar Small Signal | Si | Single | 120 | 1 | 120 | 5 | 0.1 | 300 to 500 | 350@2mA@6V | 150 | 0.3@1mA@10mA | 4 | 10 | Tape and Reel | 3 | S-Mini | SOT | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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GT40WR21,Q
Trans IGBT Chip N-CH 1800V 40A 375W 3-Pin(3+Tab) TO-3PN
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Von 5,0586 € bis 5,4828 €
pro Stück
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Toshiba | IGBT-Chip | N | Single | ±25 | 1800 | 40 | 375 | 3 | TO-3PN | TO | No | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SC5439(F)
Trans GP BJT NPN 450V 8A 2000mW 3-Pin(3+Tab) TO-220NIS
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Toshiba | GP BJT | NPN | Bipolar Power | Si | Single | 450 | 1 | 1000 | 9 | 1.5@0.046A@3.2A | 8 | 2 to 30 | 10@1mA@5V|14@1A@5V | 2000 | 1@0.046A@3.2A | 3 | TO-220NIS | TO | No | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
CMF03(TE12L,Q,M)
Diode Switching 900V 0.5A 2-Pin M-FLAT T/R
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Toshiba | Gleichrichter | Switching Diode | Single | 900 | 0.5 | 10 | 2.5 | 50 | 100 | Tape and Reel | 2 | M-FLAT | No | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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2SC5064-Y(TE85L,F)
Trans RF BJT NPN 12V 0.03A 150mW 3-Pin S-Mini T/R
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Toshiba | HF-BJT | NPN | Si | Single | 12 | 1 | 20 | 3 | 0.03 | 5V/10mA | 120 to 200 | 120@10mA@5V | 150 | 0.7 | 17 | 7000(Typ) | 2 | Tape and Reel | 3 | S-Mini | SOT | No | Unknown | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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2SC3325-Y,LXGF(T
Trans GP BJT NPN 50V 0.5A 200mW 3-Pin S-Mini T/R
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Toshiba | GP BJT | NPN | Bipolar Small Signal | Si | Single | 50 | 1 | 50 | 5 | 0.5 | 30 to 50|50 to 120|120 to 200 | 120@100mA@1V|40@400mA@6V | 200 | 0.25@10mA@100mA | Tape and Reel | 3 | S-Mini | SOT | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SF16GZ51(F)
Thyristor SCR 400V 275A 3-Pin(3+Tab)
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Toshiba | Silicon Controlled Rectifiers - SCRs | 100 | 50(Typ) | 0.02 | 1.5 | 15 | 50 | 400 | 5 | 1.5@50A | 400 | 16 | 3 | TO-3P(N)IS | No | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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TK20A60U(Q)
Trans MOSFET N-CH Si 600V 20A 3-Pin(3+Tab) TO-220SIS
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 600 | ±30 | 5 | 20 | 190@10V | 27@10V | 27 | 45000 | 1470@10V | 3 | TO-220SIS | TO | No | Unknown | No | No | No | No | EAR99 | Yes | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SK2949(SM,Q)
Trans MOSFET N-CH Si 400V 10A 3-Pin(2+Tab) TO-220SM
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 400 | ±30 | 10 | 550@10V | 34@10V | 34 | 80000 | 1340@10V | 3 | TO-220SM | TO | No | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SSM6N24TU,LF
Trans MOSFET N-CH Si 30V 0.5A 6-Pin UF T/R Automotive AEC-Q101
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Von 0,0999 € bis 0,1098 €
pro Stück
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Toshiba | MOSFETs | Small Signal | Si | N | Dual | Enhancement | 2 | 30 | ±12 | 1.1 | 0.5 | 145@4.5V | 500 | 245@10V | Tape and Reel | 6 | UF | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| U2GWJ44(TE12L,Q) Diode Schottky 40V 2A 2-Pin I-FLAT T/R |
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Toshiba | Gleichrichter | Schottky Diode | Single | 40 | 2 | 40 | 0.55 | 500 | Tape and Reel | 2 | I-FLAT | No | No | No | No | No | EAR99 |