Toshiba Dioden, Transistoren und Thyristoren
| Teile-Nr. | Preis | Bestand | Hersteller | Kategorie | Type | Maximum Rate of Rise of Off-State Voltage - (V/us) | Category | Maximum Rate of Rise of On-State Current - (A/us) | Material | Frequency Band | Channel Type | Maximum Gate Trigger Voltage - (V) | Configuration | Channel Mode | Typical Zener Voltage - (V) | Repetitive Peak Reverse Voltage - (V) | Peak Reverse Repetitive Voltage - (V) | Maximum Reverse Voltage - (V) | Maximum Gate Trigger Current - (mA) | Maximum Gate Emitter Voltage - (V) | Maximum Collector-Emitter Voltage - (V) | Zener Voltage Tolerance | Surge Current Rating - (A) | Maximum Reverse Current - (uA) | Maximum Continuous Forward Current - (A) | Maximum Collector-Base Voltage - (V) | Number of Elements per Chip | Minimum Tuning Ratio | Maximum Holding Current - (mA) | Maximum Drain-Gate Voltage - (V) | Maximum Continuous DC Collector Current - (A) | Maximum Base-Emitter Voltage - (V) | Typical Input Resistance - (kOhm) | Tuning Ratio Test Condition | Test Current - (mA) | Peak Non-Repetitive Forward Surge Current - (A) | Maximum Series Resistance @ Maximum IF - (Ohm) | Maximum Forward Voltage - (V) | Maximum Drain-Source Voltage - (V) | Maximum Base-Emitter Saturation Voltage - (V) | Typical Resistor Ratio | Peak Reverse Current - (uA) | Maximum Reverse Leakage Current - (uA) | Maximum Gate-Source Voltage - (V) | Maximum DC Collector Current - (A) | Peak On-State Voltage - (V) | Operational Bias Conditions | Minimum Diode Capacitance - (pF) | Maximum Junction Ambient Thermal Resistance | Maximum Gate Threshold Voltage - (V) | Maximum Gate Peak Inverse Voltage - (V) | Maximum Zener Impedance - (Ohm) | Maximum Power Dissipation - (mW) | Maximum Power Dissipation @ 25C - (mW) | Maximum Diode Capacitance - (pF) | Maximum Continuous Drain Current - (A) | RMS On-State Current - (A) | Repetitive Peak Forward Blocking Voltage - (V) | Rated Average On-State Current - (A) | Peak Reverse Recovery Time - (ns) | Minimum DC Current Gain Range | Minimum DC Current Gain | Maximum Drain-Source Resistance - (mOhm) | Typical Gate Charge @ Vgs - (nC) | Repetitive Peak Off-State Current - (mA) | Maximum Junction Case Thermal Resistance | Typical Gate Charge @ 10V - (nC) | Typical Output Capacitance - (pF) | Typical Input Capacitance @ Vds - (pF) | Typical Power Gain - (dB) | Maximum Output Power - (W) | Maximum Collector-Emitter Saturation Voltage - (V) | Maximum Frequency - (MHz) | Typical 3rd Order Intercept Point - (dBm) | Maximum Transition Frequency - (MHz) | Maximum Noise Figure - (dB) | Typical Drain-Source Resistance @ 25°C - (mOhm) | Process Technology | Packaging | Pin Count | Supplier Package | Standard Package Name | CECC Qualified | ESD Protection | Military | AEC Qualified | AEC Qualified Number | Auto motive | P PAP | ECCN Code | SVHC | SVHC Exceeds Threshold |
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TK34A10N1,S4X(S
Trans MOSFET N-CH Si 100V 75A 3-Pin(3+Tab) TO-220SIS Magazine
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Bestand
6
0,6513 €
pro Stück
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 100 | ±20 | 4 | 35000 | 75 | 9.5@10V | 38@10V | 38 | 2600@50V | Magazine | 3 | TO-220SIS | TO | No | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SSM3J351R,LF(T
Trans MOSFET P-CH Si 60V 3.5A 3-Pin SOT-23F T/R Automotive AEC-Q101
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Bestand
15.005
Von 0,108 € bis 0,2989 €
pro Stück
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Toshiba | MOSFETs | Power MOSFET | Si | P | Single | Enhancement | 1 | 60 | -20 | 2 | 2000 | 3.5 | 134@10V | 15.1@10V | 15.1 | 660@10V | Tape and Reel | 3 | SOT-23F | SOT | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
RN1103,LF(CT
Trans Digital BJT NPN 50V 0.1A 100mW 3-Pin SSM T/R
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Bestand
2.170
Von 0,0278 € bis 0,0872 €
pro Stück
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Toshiba | Digital-BJT | NPN | Single | 50 | 0.1 | 22 | 1 | 100 | 70@10mA@5V | 0.3@0.25mA@5mA | Tape and Reel | 3 | SSM | No | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
CMS11(TE12L,Q,M)
Diode Schottky 40V 2A 2-Pin M-FLAT T/R
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Bestand
442
0,131 €
pro Stück
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Toshiba | Gleichrichter | Schottky Diode | Single | 40 | 2@Ta=34C | 30 | 0.55 | 500 | Tape and Reel | 2 | M-FLAT | No | Unknown | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
CTS05S40,L3F
Diode Small Signal Schottky Si 40V 0.5A 2-Pin CST T/R
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Bestand
7.577
Von 0,0251 € bis 0,0438 €
pro Stück
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Toshiba | Gleichrichter | Small Signal Schottky Diode | Si | Single | 40 | 0.5 | 2 | 0.6 | 50 | 42(Typ) | Tape and Reel | 2 | CST | SOD | No | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
CUS05S40,H3F
Diode Small Signal Schottky 40V 0.5A 2-Pin USC T/R
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Bestand
3.000
0,0365 €
pro Stück
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Toshiba | Gleichrichter | Small Signal Schottky Diode | Single | 40 | 0.5 | 5 | 0.6 | 50 | Tape and Reel | 2 | USC | SOD | No | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SK2313(F)
Trans MOSFET N-CH Si 60V 60A 3-Pin(3+Tab) TO-3PN Sack
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Bestand
150
3,1497 €
pro Stück
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 60 | ±20 | 150000 | 60 | 11@10V | 170@10V | 170 | 5400@10V | Sack | 3 | TO-3PN | TO | No | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TK22E10N1,S1X(S
Trans MOSFET N-CH Si 100V 22A 3-Pin(3+Tab) TO-220 Magazine
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Bestand
30
Von 0,6263 € bis 0,8371 €
pro Stück
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 100 | ±20 | 4 | 72000 | 22 | 13.8@10V | 28@10V | 28 | 1800@50V | Magazine | 3 | TO-220 | TO | No | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TK190U65Z,RQ
Trans MOSFET N-CH Si 650V 15A 9-Pin(8+Tab) TOLL T/R
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Bestand
1.469
0,9482 €
pro Stück
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single Hex Source | Enhancement | 1 | 650 | ±30 | 4 | 130000 | 15 | 190@10V | 25@10V | 25 | 1370@300V | DTMOSVI | Tape and Reel | 9 | TOLL | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TJ60S06M3L(T6L1,NQ
Trans MOSFET P-CH Si 60V 60A 3-Pin(2+Tab) DPAK+ T/R Automotive AEC-Q101
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Bestand
974
0,7099 €
pro Stück
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Toshiba | MOSFETs | Power MOSFET | Si | P | Single | Enhancement | 1 | 60 | 10 | 3 | 100000 | 60 | 11.2@10V | 156@10V | 156 | 7760@10V | Tape and Reel | 3 | DPAK+ | TO | No | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TBAT54A,LM
Diode Small Signal Schottky 35V 0.2A 3-Pin SOT-23 T/R
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Bestand
6.000
Von 0,0304 € bis 0,0336 €
pro Stück
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Toshiba | Gleichrichter | Small Signal Schottky Diode | Dual Common Anode | 35 | 0.2 | 1 | 0.58@0.1A | 2 | 320 | 1.5 | Tape and Reel | 3 | SOT-23 | SOT | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TPH1400ANH,L1Q(M
Trans MOSFET N-CH Si 100V 42A 8-Pin SOP Advance T/R
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Bestand
6.780
Von 0,3671 € bis 0,6176 €
pro Stück
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single Quad Drain Triple Source | Enhancement | 1 | 100 | ±20 | 4 | 2800 | 42 | 13.6@10V | 22@10V | 22 | 1440@50V | Tape and Reel | 8 | SOP Advance | SO | No | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SA1681(TE12L,ZC)
Trans GP BJT PNP 50V 2A 1000mW 4-Pin(3+Tab) PW-Mini T/R
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Bestand
990
Von 0,108 € bis 0,2989 €
pro Stück
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Toshiba | GP BJT | PNP | Bipolar Power | Si | Single Dual Collector | 50 | 60 | 1 | 6 | 1.2@0.05@1A | 2 | 1000 | 30 to 50|50 to 120|120 to 200 | 40@1.5A@2V|120@100mA@2V | 0.5@0.05A@1A | Tape and Reel | 4 | PW-Mini | SOT | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
RN4985,LF(CT
Trans Digital BJT NPN/PNP 50V 0.1A 200mW 6-Pin US T/R Automotive AEC-Q101
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Bestand
2.880
Von 0,0251 € bis 0,0337 €
pro Stück
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Toshiba | Digital-BJT | NPN|PNP | Dual | 50 | 0.1 | 2.2 | 0.047 | 200 | 80@10mA@5V | 0.3@0.25mA@5mA | Tape and Reel | 6 | US | No | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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TK56E12N1,S1X(S
Trans MOSFET N-CH Si 120V 112A 3-Pin(3+Tab) TO-220 Magazine
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Bestand
61
Von 0,8612 € bis 1,935 €
pro Stück
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 120 | ±20 | 4 | 168000 | 112 | 7@10V | 69@10V | 69 | 4200@60V | Magazine | 3 | TO-220 | TO | No | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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TTC016,L1Q(O
Trans GP BJT NPN 50V 5A 1200mW 3-Pin(2+Tab) New PW-Mold
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Bestand
790
Von 0,2617 € bis 0,7239 €
pro Stück
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Toshiba | GP BJT | NPN | Bipolar Power | Si | Single | 50 | 120 | 1 | 9 | 1.1@32mA@1.6A | 5 | 1200 | 200 to 300|300 to 500 | 400@0.5A@2V|200@1.6A@2V | 0.22@32mA@1.6A | 3 | New PW-Mold | TO | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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2SA1241-Y(T6L1,NV)
Trans GP BJT PNP 50V 2A 1000mW 3-Pin(2+Tab) New PW-Mold T/R
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Bestand
705
Von 0,1857 € bis 0,355 €
pro Stück
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Toshiba | GP BJT | PNP | Bipolar Power | Si | Single | 50 | 50 | 1 | 5 | 1.2@0.05A@1A | 2 | 1000 | 120 to 200 | 120@0.5A@2V | 0.5@0.05A@1A | Tape and Reel | 3 | New PW-Mold | TO | No | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SSM3K44FS,LF(T
Trans MOSFET N-CH Si 30V 0.1A 3-Pin SSM T/R
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Bestand
779
Von 0,0403 € bis 0,0487 €
pro Stück
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Toshiba | MOSFETs | Small Signal | Si | N | Single | Enhancement | 1 | 30 | ±20 | 1.5 | 150 | 0.1 | 4000@4V | 8.5@3V | Tape and Reel | 3 | SSM | No | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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TK8R2A06PL,S4X(S
Trans MOSFET N-CH Si 60V 50A 3-Pin(3+Tab) TO-220SIS
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Bestand
20
Von 0,6487 € bis 0,8638 €
pro Stück
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 60 | ±20 | 36000 | 50 | 8.2@10V | 14.3@4.5V|28.3@10V | 1990@30V | 3 | TO-220SIS | TO | No | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
1SS272(TE85L,F)
Diode Switching 85V 0.1A 4-Pin SMQ T/R
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Bestand
28.471
Von 0,0523 € bis 0,057 €
pro Stück
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Toshiba | Gleichrichter | Switching Diode | Dual Parallel | 85 | 0.1 | 2 | 1.2 | 0.5 | 200 | 4 | Tape and Reel | 4 | SMQ | SOT | No | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TPH1500CNH1,LQ
Trans MOSFET N-CH Si 150V 74A 8-Pin SOP Advance(N)
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Bestand
4.760
Von 0,5598 € bis 0,5729 €
pro Stück
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single Quad Drain Triple Source | Enhancement | 1 | 150 | ±20 | 2500 | 74 | 15.4@10V | 22@10V | 1700@75V | 8 | SOP Advance(N) | SO | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TK024N60Z1,S1F
Trans MOSFET N-CH Si 600V 80A 3-Pin(3+Tab) TO-247
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Bestand
58
Von 7,4437 € bis 8,8846 €
pro Stück
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 600 | ±30 | 506000 | 80 | 24@10V | 140@10V | 140 | 8420@300V | 3 | TO-247 | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SC4207-Y(TE85L,F)
Trans GP BJT NPN 50V 0.15A 300mW 5-Pin SMV T/R
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Bestand
1.740
Von 0,0638 € bis 0,1667 €
pro Stück
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Toshiba | GP BJT | NPN | Bipolar Small Signal | Si | Dual Common Emitter | 50 | 60 | 2 | 5 | 0.15 | 300 | 120 to 200 | 120@2mA@6V | 0.25@10mA@100mA | Tape and Reel | 5 | SMV | SOT | No | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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TK39J60W,S1VQ(O
Trans MOSFET N-CH Si 600V 38.8A 3-Pin(3+Tab) TO-3PN Bag/Tube
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Bestand
7
9,3295 €
pro Stück
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 600 | ±30 | 270000 | 38.8 | 65@10V | 110@10V | 110 | 4100@300V | Bag|Tube | 3 | TO-3PN | TO | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SSM6P49NU,LF(T
Trans MOSFET P-CH Si 20V 4A 6-Pin UDFN EP T/R
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Bestand
11.630
Von 0,2229 € bis 0,6151 €
pro Stück
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Toshiba | MOSFETs | Power MOSFET | Si | P | Dual | Enhancement | 2 | 20 | ±12 | 1.2 | 2000 | 4 | 45@10V | 6.74@4.5V | 480@10V | Tape and Reel | 6 | UDFN EP | DFN | No | No | No | No | No | EAR99 | No |