Toshiba Dioden, Transistoren und Thyristoren
| Teile-Nr. | Preis | Bestand | Hersteller | Kategorie | Type | Category | Maximum Rate of Rise of On-State Current - (A/us) | Maximum Rate of Rise of Off-State Voltage - (V/us) | Material | Frequency Band | Channel Type | Repetitive Peak Off-State Current - (mA) | Configuration | Channel Mode | Typical Zener Voltage - (V) | Peak Reverse Repetitive Voltage - (V) | Maximum Reverse Voltage - (V) | Maximum Gate Trigger Voltage - (V) | Maximum Gate Emitter Voltage - (V) | Maximum Collector-Emitter Voltage - (V) | Zener Voltage Tolerance | Surge Current Rating - (A) | Number of Elements per Chip | Maximum Reverse Current - (uA) | Maximum Gate Trigger Current - (mA) | Maximum Continuous Forward Current - (mA) | Maximum Collector-Base Voltage - (V) | Minimum Tuning Ratio | Maximum Holding Current - (mA) | Maximum Drain-Gate Voltage - (V) | Maximum Base-Emitter Voltage - (V) | Typical Input Resistance - (kOhm) | Tuning Ratio Test Condition | Test Current - (mA) | Peak Non-Repetitive Forward Surge Current - (A) | Maximum Series Resistance @ Maximum IF - (Ohm) | Maximum Forward Voltage - (V) | Maximum Drain-Source Voltage - (V) | Maximum Base-Emitter Saturation Voltage - (V) | Typical Resistor Ratio | Repetitive Peak Reverse Voltage - (V) | Peak Reverse Current - (uA) | Maximum Reverse Leakage Current - (uA) | Maximum Gate-Source Voltage - (V) | Maximum DC Collector Current - (A) | Maximum Continuous DC Collector Current - (A) | Operational Bias Conditions | Minimum Diode Capacitance - (pF) | Maximum Gate Threshold Voltage - (V) | Maximum Gate Peak Inverse Voltage - (V) | Peak On-State Voltage - (V) | Maximum Zener Impedance - (Ohm) | Maximum Power Dissipation @ 25C - (mW) | Maximum Diode Capacitance - (pF) | Maximum Continuous Drain Current - (A) | Repetitive Peak Forward Blocking Voltage - (V) | Peak Reverse Recovery Time - (ns) | Minimum DC Current Gain Range | Minimum DC Current Gain | Maximum Drain-Source Resistance - (mOhm) | Typical Gate Charge @ Vgs - (nC) | Rated Average On-State Current - (A) | Maximum Junction Ambient Thermal Resistance | RMS On-State Current - (A) | Maximum Junction Case Thermal Resistance | Typical Input Capacitance - (pF) | Typical Gate Charge @ 10V - (nC) | Maximum Power Dissipation - (mW) | Maximum Collector-Emitter Saturation Voltage - (V) | Typical Output Capacitance - (pF) | Typical Input Capacitance @ Vds - (pF) | Maximum Output Power - (W) | Typical Power Gain - (dB) | Typical 3rd Order Intercept Point - (dBm) | Maximum Transition Frequency - (MHz) | Maximum Noise Figure - (dB) | Maximum Turn-On Time - (ns) | Typical Drain-Source Resistance @ 25°C - (mOhm) | Process Technology | Packaging | Pin Count | Supplier Package | Standard Package Name | CECC Qualified | ESD Protection | Military | AEC Qualified | AEC Qualified Number | Auto motive | P PAP | ECCN Code | SVHC | SVHC Exceeds Threshold |
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TK190U65Z,RQ
Trans MOSFET N-CH Si 650V 15A 9-Pin(8+Tab) TOLL T/R
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Bestand
1.469
0,9482 €
pro Stück
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single Hex Source | Enhancement | 1 | 650 | ±30 | 4 | 15 | 190@10V | 25@10V | 25 | 130000 | 1370@300V | DTMOSVI | Tape and Reel | 9 | TOLL | No | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SK2313(F)
Trans MOSFET N-CH Si 60V 60A 3-Pin(3+Tab) TO-3PN Sack
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Bestand
150
3,1497 €
pro Stück
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 60 | ±20 | 60 | 11@10V | 170@10V | 170 | 150000 | 5400@10V | Sack | 3 | TO-3PN | TO | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
1SS394TE85LF
Diode Small Signal Schottky 15V 0.1A 3-Pin S-Mini T/R Automotive AEC-Q101
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Bestand
2.820
Von 0,0676 € bis 0,1762 €
pro Stück
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Toshiba | Gleichrichter | Small Signal Schottky Diode | Single | 15 | 0.1 | 1 | 0.5 | 20 | 150 | Tape and Reel | 3 | S-Mini | SOT | No | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TPH1500CNH,LQ(M1
Trans MOSFET N-CH Si 150V 50A 8-Pin SOP Advance T/R
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Bestand
3.372
Von 0,591 € bis 0,3868 €
pro Stück
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single Quad Drain Triple Source | Enhancement | 1 | 150 | ±20 | 4 | 50 | 15.4@10V | 22@10V | 22 | 2800 | 1700@75V | Tape and Reel | 8 | SOP Advance | SO | No | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SC5703(TE85L,F)
Trans GP BJT NPN 50V 4A 800mW 3-Pin TSM T/R
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Bestand
2.950
Von 0,1633 € bis 0,4518 €
pro Stück
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Toshiba | GP BJT | NPN | Bipolar Power | Si | Single | 50 | 1 | 100 | 7 | 1.1@32mA@1.6A | 4 | 200 to 300|300 to 500 | 400@0.5A@2V|200@1.6A@2V | 800 | 0.12@32mA@1.6A | Tape and Reel | 3 | TSM | SOT | No | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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TPH2R506PL,L1Q(M
Trans MOSFET N-CH Si 60V 160A 8-Pin SOP Advance
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Bestand
3.201
1,9782 €
pro Stück
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 60 | ±20 | 2.5 | 160 | 2500@10V | 32@4.5V|60@10V | 60 | 3000 | 4180@30V | 8 | SOP Advance | SO | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SSM6N17FU(TE85L,F)
Trans MOSFET N-CH Si 50V 0.1A 6-Pin US T/R Automotive AEC-Q101
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Bestand
1.439
Von 0,1492 € bis 0,3619 €
pro Stück
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Toshiba | MOSFETs | Small Signal | Si | N | Dual | Enhancement | 2 | 50 | ±7 | 0.1 | 20000@4V | 200 | 7@3V | Tape and Reel | 6 | US | No | Unknown | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TRS12E65F,S1Q
Diode Schottky SiC 650V 12A 2-Pin(2+Tab) TO-220 Tube
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Bestand
522
0,846 €
pro Stück
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Toshiba | Gleichrichter | Schottky Diode | SiC | Single | 650 | 12 | 97 | 1.6 | 60 | 115000 | Tube | 2 | TO-220 | TO | No | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BAS316,H3F
Diode Switching Si 100V 0.25A 2-Pin USC T/R
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Bestand
2.998
Von 0,0197 € bis 0,0837 €
pro Stück
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Toshiba | Gleichrichter | Switching Diode | Si | Single | 100 | 0.25 | 1 | 1.25@0.15A | 0.2@80V | 0.35(Typ) | 3 | 230 | Tape and Reel | 2 | USC | SOD | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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1SS377(TE85L,F)
Diode Small Signal Schottky 15V 0.1A 3-Pin S-Mini T/R
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Bestand
3.210
Von 0,0581 € bis 0,1374 €
pro Stück
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Toshiba | Gleichrichter | Small Signal Schottky Diode | Dual Common Cathode | 15 | 0.1 | 1 | 0.5 | 20 | 150 | Tape and Reel | 3 | S-Mini | SOT | No | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
1SS416CT,L3F(T
Diode Small Signal Schottky 35V 0.1A 2-Pin CST T/R
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Bestand
13.055
Von 0,1581 € bis 0,1633 €
pro Stück
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Toshiba | Gleichrichter | Small Signal Schottky Diode | Single | 35 | 0.1 | 1 | 0.5 | 50 | 100 | Tape and Reel | 2 | CST | SOD | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SSM3K15ACT(TPL3)
Trans MOSFET N-CH Si 30V 0.1A 3-Pin CST T/R
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Bestand
352
0,0397 €
pro Stück
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Toshiba | MOSFETs | Small Signal | Si | N | Single | Enhancement | 1 | 30 | ±20 | 1.5 | 0.1 | 3600@4V | 100 | 13.5@3V | Tape and Reel | 3 | CST | No | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SSM6H19NU,LF(T
Trans MOSFET N-CH Si 40V 2A 6-Pin UDFN EP T/R
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Bestand
915
Von 0,1019 € bis 0,2669 €
pro Stück
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 40 | ±12 | 1.2 | 2 | 198@4.5V | 1.1@4.2V|1@3.6V|0.75@2.5V | 2000 | 130 | Tape and Reel | 6 | UDFN EP | DFN | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TPN1600ANH,L1Q
Trans MOSFET N-CH 100V 36A 8-Pin TSON Advance T/R
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Bestand
10.000
0,2724 €
pro Stück
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Toshiba | MOSFETs | Power MOSFET | N | Single Quad Drain Triple Source | Enhancement | 1 | 100 | ±20 | 4 | 36 | 16@10V | 19 | 1900 | 1230@50V | Tape and Reel | 8 | TSON Advance | SON | No | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TK095N65Z5,S1F
Trans MOSFET N-CH Si 650V 29A 3-Pin(3+Tab) TO-247
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Bestand
93
Von 3,1375 € bis 3,2498 €
pro Stück
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 650 | ±30 | 29 | 95@10V | 50@10V | 50 | 230000 | 2880@300V | 3 | TO-247 | TO | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TK65A10N1,S4X(S
Trans MOSFET N-CH Si 100V 148A 3-Pin(3+Tab) TO-220SIS Magazine
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Bestand
29
Von 1,1748 € bis 2,4015 €
pro Stück
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 100 | ±20 | 4 | 148 | 4.8@10V | 81@10V | 81 | 45000 | 5400@50V | U-MOS VIII-H | Magazine | 3 | TO-220SIS | TO | No | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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RN4902,LF(CT
Trans Digital BJT NPN/PNP 50V 0.1A 200mW 6-Pin US T/R
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Bestand
140
Von 0,0456 € bis 0,0907 €
pro Stück
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Toshiba | Digital-BJT | NPN|PNP | Dual | 50 | 10 | 1 | 0.1 | 50@10mA@5V | 200 | 0.3@0.25mA@5mA | Tape and Reel | 6 | US | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
CRS08(TE85L,Q,M)
Diode Schottky 30V 1.5A 2-Pin S-FLAT T/R
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Bestand
3.000
0,1063 €
pro Stück
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Toshiba | Gleichrichter | Schottky Diode | Single | 30 | 1.5 | 30 | 0.36 | 1000 | 140°C/W | Tape and Reel | 2 | S-FLAT | No | Unknown | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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1SS196(TE85L,F)
Diode Switching 85V 0.3A 3-Pin S-Mini T/R Automotive AEC-Q101
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Bestand
49
0,1356 €
pro Stück
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Toshiba | Gleichrichter | Switching Diode | Single | 85 | 0.3 | 2 | 1.2@0.1A | 0.5 | 4 | 150 | Tape and Reel | 3 | S-Mini | SOT | No | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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CUS08F30,H3F(T
Diode Small Signal Schottky 30V 0.8A 2-Pin USC T/R
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Bestand
1.622
Von 0,0746 € bis 0,083 €
pro Stück
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Toshiba | Gleichrichter | Small Signal Schottky Diode | Single | 30 | 0.8 | 5 | 0.45 | 50 | Tape and Reel | 2 | USC | SOD | No | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TK12A65D(STA4,Q,M) N-Channel MOSFET |
Bestand
16
Von 0,9157 € bis 1,8832 €
pro Stück
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Toshiba | MOSFETs | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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TK34A10N1,S4X(S
Trans MOSFET N-CH Si 100V 75A 3-Pin(3+Tab) TO-220SIS Magazine
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Bestand
6
0,6513 €
pro Stück
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 100 | ±20 | 4 | 75 | 9.5@10V | 38@10V | 38 | 35000 | 2600@50V | Magazine | 3 | TO-220SIS | TO | No | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SSM3J351R,LF(T
Trans MOSFET P-CH Si 60V 3.5A 3-Pin SOT-23F T/R Automotive AEC-Q101
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Bestand
15.005
Von 0,108 € bis 0,2989 €
pro Stück
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Toshiba | MOSFETs | Power MOSFET | Si | P | Single | Enhancement | 1 | 60 | -20 | 2 | 3.5 | 134@10V | 15.1@10V | 15.1 | 2000 | 660@10V | Tape and Reel | 3 | SOT-23F | SOT | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TPH2R306NH1,LQ(M N-Channel MOSFET |
Bestand
2.610
Von 0,7204 € bis 2,125 €
pro Stück
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Toshiba | MOSFETs | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
RN4984FE,LF(CT
Trans Digital BJT NPN/PNP 50V 0.1A 100mW 6-Pin ES T/R
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Bestand
3.835
Von 0,0508 € bis 0,1235 €
pro Stück
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Toshiba | Digital-BJT | NPN|PNP | Dual | 50 | 47 | 1 | 0.1 | 80@10mA@5V | 100 | 0.3@0.25mA@5mA | Tape and Reel | 6 | ES | No | No | No | No | EAR99 | No |