Toshiba Dioden, Transistoren und Thyristoren
| Teile-Nr. | Preis | Bestand | Hersteller | Kategorie | Type | Maximum Rate of Rise of Off-State Voltage - (V/us) | Category | Maximum Rate of Rise of On-State Current - (A/us) | Material | Frequency Band | Channel Type | Maximum Gate Trigger Voltage - (V) | Configuration | Channel Mode | Typical Zener Voltage - (V) | Repetitive Peak Reverse Voltage - (V) | Peak Reverse Repetitive Voltage - (V) | Maximum Reverse Voltage - (V) | Maximum Gate Trigger Current - (mA) | Maximum Gate Emitter Voltage - (V) | Maximum Collector-Emitter Voltage - (V) | Zener Voltage Tolerance | Surge Current Rating - (A) | Maximum Reverse Current - (uA) | Maximum Continuous Forward Current - (A) | Maximum Collector-Base Voltage - (V) | Number of Elements per Chip | Minimum Tuning Ratio | Maximum Holding Current - (mA) | Maximum Drain-Gate Voltage - (V) | Maximum Continuous DC Collector Current - (A) | Maximum Base-Emitter Voltage - (V) | Typical Input Resistance - (kOhm) | Tuning Ratio Test Condition | Test Current - (mA) | Peak Non-Repetitive Forward Surge Current - (A) | Maximum Series Resistance @ Maximum IF - (Ohm) | Maximum Forward Voltage - (V) | Maximum Drain-Source Voltage - (V) | Maximum Base-Emitter Saturation Voltage - (V) | Typical Resistor Ratio | Peak Reverse Current - (uA) | Maximum Reverse Leakage Current - (uA) | Maximum Gate-Source Voltage - (V) | Maximum DC Collector Current - (A) | Peak On-State Voltage - (V) | Operational Bias Conditions | Minimum Diode Capacitance - (pF) | Maximum Junction Ambient Thermal Resistance | Maximum Gate Threshold Voltage - (V) | Maximum Gate Peak Inverse Voltage - (V) | Maximum Zener Impedance - (Ohm) | Maximum Power Dissipation - (mW) | Maximum Power Dissipation @ 25C - (mW) | Maximum Diode Capacitance - (pF) | Maximum Continuous Drain Current - (A) | RMS On-State Current - (A) | Repetitive Peak Forward Blocking Voltage - (V) | Rated Average On-State Current - (A) | Peak Reverse Recovery Time - (ns) | Minimum DC Current Gain Range | Minimum DC Current Gain | Maximum Drain-Source Resistance - (mOhm) | Typical Gate Charge @ Vgs - (nC) | Repetitive Peak Off-State Current - (mA) | Maximum Junction Case Thermal Resistance | Typical Gate Charge @ 10V - (nC) | Typical Output Capacitance - (pF) | Typical Input Capacitance @ Vds - (pF) | Typical Power Gain - (dB) | Maximum Output Power - (W) | Maximum Collector-Emitter Saturation Voltage - (V) | Maximum Frequency - (MHz) | Typical 3rd Order Intercept Point - (dBm) | Maximum Transition Frequency - (MHz) | Maximum Noise Figure - (dB) | Typical Drain-Source Resistance @ 25°C - (mOhm) | Process Technology | Packaging | Pin Count | Supplier Package | Standard Package Name | CECC Qualified | ESD Protection | Military | AEC Qualified | AEC Qualified Number | Auto motive | P PAP | ECCN Code | SVHC | SVHC Exceeds Threshold |
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SSM6L820R,LF
Trans MOSFET N/P-CH Si 30V/20V 4A 6-Pin TSOP-F T/R Automotive AEC-Q101
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Bestand
1.523
0,0923 €
pro Stück
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Toshiba | MOSFETs | Power MOSFET | Si | N|P | Dual | Enhancement | 2 | 30@N Channel|20@P Channel | 12@N Channel|6@P Channel | 1800 | 4 | 39.1@4.5V@N Channel|45@10V@P Channel | 3.2@4.5V@N Channel|6.7@4.5V@P Channel | 310@15V@N Channel|480@10V@P Channel | Tape and Reel | 6 | TSOP-F | SO | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SSM6J511NU,LF
Trans MOSFET P-CH Si 12V 14A 6-Pin UDFN-B EP T/R
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Bestand
42.000
Von 0,1164 € bis 0,1949 €
pro Stück
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Toshiba | MOSFETs | Power MOSFET | Si | P | Single Quad Drain | Enhancement | 1 | 12 | ±10 | 1250 | 14 | 9.1@8V | 47@4.5V | 3350@6V | Tape and Reel | 6 | UDFN-B EP | DFN | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SC3326-B,LF
Trans GP BJT NPN 20V 0.3A 150mW 3-Pin S-Mini T/R Automotive AEC-Q101
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Bestand
10
Von 0,0177 € bis 0,1272 €
pro Stück
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Toshiba | GP BJT | NPN | Bipolar Small Signal | Si | Single | 20 | 50 | 1 | 25 | 0.3 | 150 | 300 to 500 | 350@4mA@2V | 4.8 | 0.1@3mA@30mA | Tape and Reel | 3 | S-Mini | SOT | No | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SSM3J355R,LF(T
Trans MOSFET P-CH Si 20V 6A 3-Pin SOT-23F T/R
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Bestand
90
Von 0,108 € bis 0,2065 €
pro Stück
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Toshiba | MOSFETs | Power MOSFET | Si | P | Single | Enhancement | 1 | 20 | ±10 | 2000 | 6 | 30.1@4.5V | 16.6@4.5V | 1030@10V | Tape and Reel | 3 | SOT-23F | SOT | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SA2195,LF(T
Trans GP BJT PNP 50V 1.7A 800mW 3-Pin UFM T/R
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Bestand
1.138
Von 0,1261 € bis 0,2427 €
pro Stück
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Toshiba | GP BJT | PNP | Small Signal | Si | Single | 50 | 50 | 1 | 7 | 1.1@33mA@1A | 1.7 | 800 | 50 to 120|120 to 200|200 to 300 | 200@0.3A@2V|100@1A@2V | 0.2@33mA@1A | Tape and Reel | 3 | UFM | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
RN2101,LF(CT
Trans Digital BJT PNP 50V 0.1A 100mW 3-Pin SSM T/R Automotive AEC-Q101
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Bestand
312
0,0149 €
pro Stück
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Toshiba | Digital-BJT | PNP | Single | 50 | 0.1 | 4.7 | 1 | 100 | 30@10mA@5V | 0.3@0.25mA@5mA | Tape and Reel | 3 | SSM | No | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TPN30008NH,LQ(S
Trans MOSFET N-CH Si 80V 22A 8-Pin TSON Advance T/R
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Bestand
92
Von 0,26 € bis 0,5339 €
pro Stück
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single Quad Drain Triple Source | Enhancement | 1 | 80 | ±20 | 4 | 1900 | 22 | 30@10V | 11@10V | 11 | 710@40V | Tape and Reel | 8 | TSON Advance | SON | No | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MSZ20V,LF
Zener Diode Single 20V 6% 70Ohm 600mW 3-Pin S-Mini T/R
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Bestand
2.840
0,0248 €
pro Stück
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Toshiba | Zener | Voltage Regulator | Single | 20 | 6% | 5 | 0.1 | 70 | 600 | 600 | 29(Typ) | Tape and Reel | 3 | S-Mini | SOT | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SSM3J338R,LF
Trans MOSFET P-CH Si 12V 6A 3-Pin SOT-23F T/R
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Bestand
9.002
0,0825 €
pro Stück
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Toshiba | MOSFETs | Power MOSFET | Si | P | Single | Enhancement | 1 | 12 | ±10 | 2000 | 6 | 17.6@8V | 19.5@4.5V | 1400@6V | Tape and Reel | 3 | SOT-23F | SOT | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TK7R2E15Q5,S1X
Silicon N-channel MOSFET
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Bestand
395
Von 1,3113 € bis 1,3476 €
pro Stück
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Toshiba | MOSFETs | 3 | TO-220 | TO | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SSM3K337R,LXGF(T
Trans MOSFET N-CH 38V 2A 3-Pin SOT-23F T/R Automotive AEC-Q101
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Bestand
3.000
Von 0,1278 € bis 0,3533 €
pro Stück
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Toshiba | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 38 | ±20 | 1.7 | 2000 | 2 | 150@10V | 120@10V | Tape and Reel | 3 | SOT-23F | SOT | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TK10A80E,S4X(S
Trans MOSFET N-CH Si 800V 10A 3-Pin(3+Tab) TO-220SIS Tube
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Bestand
40
Von 1,5549 € bis 3,0839 €
pro Stück
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 800 | ±30 | 4 | 50000 | 10 | 1000@10V | 46@10V | 46 | 2000@25V | Tube | 3 | TO-220SIS | TO | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SSM6K516NU,LF
Trans MOSFET N-CH Si 30V 6A 6-Pin UDFN-B EP T/R
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Bestand
2.681
0,0893 €
pro Stück
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single Quad Drain | Enhancement | 1 | 30 | 20|-12 | 2500 | 6 | 46@10V | 2.5@4.5V | 280@15V | Tape and Reel | 6 | UDFN-B EP | DFN | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TW027N65C,S1F
Trans MOSFET N-CH SiC 650V 58A 3-Pin(3+Tab) TO-247
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Bestand
30
12,6466 €
pro Stück
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Toshiba | MOSFETs | Power MOSFET | SiC | N | Single | Enhancement | 1 | 650 | 25 | 156000 | 58 | 37@18V | 65@18V | 2288@400V | 3 | TO-247 | TO | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SC4213-B(TE85L,F)
Trans GP BJT NPN 20V 0.3A 100mW 3-Pin USM T/R
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Bestand
15.000
0,0703 €
pro Stück
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Toshiba | GP BJT | NPN | Bipolar Small Signal | Si | Single | 20 | 50 | 1 | 25 | 0.3 | 100 | 300 to 500 | 350@4mA@2V | 0.1@3mA@30A | Tape and Reel | 3 | USM | No | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SSM3K15AMFV,L3F
Trans MOSFET N-CH Si 30V 0.1A 3-Pin VESM T/R
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Bestand
24.000
Von 0,023 € bis 0,029 €
pro Stück
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Toshiba | MOSFETs | Small Signal | Si | N | Single | Enhancement | 1 | 30 | ±20 | 150 | 0.1 | 3600@4V | 13.5@3V | Tape and Reel | 3 | VESM | SOT | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
1SS416,L3M(T
Diode Small Signal Schottky Si 35V 0.1A 2-Pin SOD-923 T/R
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Bestand
985
Von 0,0542 € bis 0,0993 €
pro Stück
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Toshiba | Gleichrichter | Small Signal Schottky Diode | Si | Single | 35 | 0.1 | 1 | 0.5 | 50 | 100 | 15(Typ) | Tape and Reel | 2 | SOD-923 | SOD | No | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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1SS301,LF
Diode Switching Si 85V 0.1A 3-Pin USM T/R Automotive AEC-Q101
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Bestand
3
0,0139 €
pro Stück
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Toshiba | Gleichrichter | Switching Diode | Si | Dual Common Cathode | 85 | 0.1 | 2 | 1.2 | 0.5 | 200 | 3 | 4 | Tape and Reel | 3 | USM | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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TK16A60W,S5VX(J
Trans MOSFET N-CH Si 600V 15.8A 3-Pin(3+Tab) TO-220SIS Tube
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Bestand
138
Von 0,9416 € bis 1,9436 €
pro Stück
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 600 | ±30 | 3.7 | 40000 | 15.8 | 190@10V | 38@10V | 38 | 1350@300V | Tube | 3 | TO-220SIS | TO | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
CMS14(T2L,TEM,Q)
Diode Schottky 60V 2A 2-Pin M-FLAT T/R
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Bestand
4.433
Von 0,0959 € bis 0,2531 €
pro Stück
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Toshiba | Gleichrichter | Schottky Diode | Single | 60 | 2 | 40 | 0.58 | 200 | Tape and Reel | 2 | M-FLAT | No | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
1SS403,H3F
Diode Switching Si 250V 0.1A 2-Pin USC T/R Automotive AEC-Q101
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Bestand
2
0,0311 €
pro Stück
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Toshiba | Gleichrichter | Switching Diode | Si | Single | 250 | 0.1 | 2 | 1.2 | 1 | 200 | 3 | 60 | Tape and Reel | 2 | USC | SOD | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TPH1R204PB,L1Q
Trans MOSFET N-CH Si 40V 240A 8-Pin SOP Advance T/R
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Bestand
195
Von 0,5256 € bis 0,8875 €
pro Stück
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single Quad Drain Triple Source | Enhancement | 1 | 40 | ±20 | 3000 | 240 | 1.2@10V | 62@10V | 62 | 4400@20V | 0.85@10V|1.2@6V | Tape and Reel | 8 | SOP Advance | SO | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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CMS03(TE12L,Q,M)
Diode Schottky 30V 3A 2-Pin M-FLAT T/R
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Bestand
19.087
Von 0,0697 € bis 0,1071 €
pro Stück
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Toshiba | Gleichrichter | Schottky Diode | Single | 30 | 3@Ta=28.4C | 40 | 0.45 | 500 | Tape and Reel | 2 | M-FLAT | No | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TK39N60W5,S1VF(S
Trans MOSFET N-CH Si 600V 38.8A 3-Pin(3+Tab) TO-247 Tube
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Bestand
2
6,5652 €
pro Stück
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 600 | ±30 | 270000 | 38.8 | 74@10V | 135@10V | 135 | 4100@300V | Tube | 3 | TO-247 | TO | No | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SSM3J56MFV,L3F(T
Trans MOSFET P-CH Si 20V 0.8A 3-Pin VESM T/R
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Bestand
24.000
0,0294 €
pro Stück
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Toshiba | MOSFETs | Small Signal | Si | P | Single | Enhancement | 1 | 20 | ±8 | 1 | 800 | 0.8 | 390@4.5V | 1.6@4.5V | 100@10V | Tape and Reel | 3 | VESM | SOT | No | No | No | No | No | EAR99 | No |