Toshiba Diodes, Transistors and Thyristors
| Teile-Nr. | Preis | Bestand | Hersteller | Kategorie | Type | Category | Maximum Rate of Rise of On-State Current - (A/us) | Maximum Rate of Rise of Off-State Voltage - (V/us) | Material | Frequency Band | Channel Type | Repetitive Peak Off-State Current - (mA) | Configuration | Channel Mode | Typical Zener Voltage - (V) | Peak Reverse Repetitive Voltage - (V) | Maximum Reverse Voltage - (V) | Maximum Gate Trigger Voltage - (V) | Maximum Gate Emitter Voltage - (V) | Maximum Collector-Emitter Voltage - (V) | Zener Voltage Tolerance | Surge Current Rating - (A) | Number of Elements per Chip | Maximum Reverse Current - (uA) | Maximum Gate Trigger Current - (mA) | Maximum Continuous Forward Current - (mA) | Maximum Collector-Base Voltage - (V) | Minimum Tuning Ratio | Maximum Holding Current - (mA) | Maximum Drain-Gate Voltage - (V) | Maximum Base-Emitter Voltage - (V) | Typical Input Resistance - (kOhm) | Tuning Ratio Test Condition | Test Current - (mA) | Peak Non-Repetitive Forward Surge Current - (A) | Maximum Series Resistance @ Maximum IF - (Ohm) | Maximum Forward Voltage - (V) | Maximum Drain-Source Voltage - (V) | Maximum Base-Emitter Saturation Voltage - (V) | Typical Resistor Ratio | Repetitive Peak Reverse Voltage - (V) | Peak Reverse Current - (uA) | Maximum Reverse Leakage Current - (uA) | Maximum Gate-Source Voltage - (V) | Maximum DC Collector Current - (A) | Maximum Continuous DC Collector Current - (A) | Operational Bias Conditions | Minimum Diode Capacitance - (pF) | Maximum Gate Threshold Voltage - (V) | Maximum Gate Peak Inverse Voltage - (V) | Peak On-State Voltage - (V) | Maximum Zener Impedance - (Ohm) | Maximum Power Dissipation @ 25C - (mW) | Maximum Diode Capacitance - (pF) | Maximum Continuous Drain Current - (A) | Repetitive Peak Forward Blocking Voltage - (V) | Peak Reverse Recovery Time - (ns) | Minimum DC Current Gain Range | Minimum DC Current Gain | Maximum Drain-Source Resistance - (mOhm) | Typical Gate Charge @ Vgs - (nC) | Rated Average On-State Current - (A) | Maximum Junction Ambient Thermal Resistance | RMS On-State Current - (A) | Maximum Junction Case Thermal Resistance | Typical Input Capacitance - (pF) | Typical Gate Charge @ 10V - (nC) | Maximum Power Dissipation - (mW) | Maximum Collector-Emitter Saturation Voltage - (V) | Typical Output Capacitance - (pF) | Typical Input Capacitance @ Vds - (pF) | Maximum Output Power - (W) | Typical Power Gain - (dB) | Typical 3rd Order Intercept Point - (dBm) | Maximum Transition Frequency - (MHz) | Maximum Noise Figure - (dB) | Maximum Turn-On Time - (ns) | Typical Drain-Source Resistance @ 25°C - (mOhm) | Process Technology | Packaging | Pin Count | Supplier Package | Standard Package Name | CECC Qualified | ESD Protection | Military | AEC Qualified | AEC Qualified Number | Auto motive | P PAP | ECCN Code | SVHC | SVHC Exceeds Threshold |
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SSM3K16FU,LF
Trans MOSFET N-CH Si 20V 0.1A 3-Pin USM T/R Automotive AEC-Q101
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Bestand
87
Von 0,0373 € bis 0,1188 €
pro Stück
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Toshiba | MOSFETs | Small Signal | Si | N | Single | Enhancement | 1 | 20 | ±10 | 0.1 | 3000@4V | 150 | 9.3@3V | Tape and Reel | 3 | USM | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TPH6R30ANL,L1Q(M
Trans MOSFET N-CH Si 100V 66A 8-Pin SOP Advance T/R
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Bestand
920
Von 0,4829 € bis 0,9728 €
pro Stück
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single Quad Drain Triple Source | Enhancement | 1 | 100 | ±20 | 66 | 6300@10V | 27@4.5V|55@10V | 2500 | 3300@50V | 8 | SOP Advance | SO | No | No | No | No | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TW015Z65C,S1F
Trans MOSFET N-CH SiC 650V 100A 4-Pin(4+Tab) TO-247 Tube
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Bestand
30
26,7942 €
pro Stück
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Toshiba | MOSFETs | Power MOSFET | SiC | N | Single Dual Source | Enhancement | 1 | 650 | 25 | 100 | 22@18V | 128@18V | 342000 | 4850@400V | Tube | 4 | TO-247 | TO | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SSM6N813R,LF
Trans MOSFET N-CH Si 100V 3.5A 6-Pin TSOP-F T/R Automotive AEC-Q101
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Bestand
1.293
0,1198 €
pro Stück
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Toshiba | MOSFETs | Power MOSFET | Si | N | Dual | Enhancement | 2 | 100 | ±20 | 3.5 | 112@10V | 3.6@4.5V | 2500 | 242@15V | Tape and Reel | 6 | TSOP-F | SO | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RN1105MFV,L3F(CT Transistor Silicon NPN Epitaxial PCT Process Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications |
Bestand
49
0,0832 €
pro Stück
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Toshiba | Digital-BJT | 3 | VESM | SOT | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SC5692(TE85L,F)
Trans GP BJT NPN 50V 2.5A 625mW 3-Pin TSM T/R
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Bestand
1.179
Von 0,0999 € bis 0,2762 €
pro Stück
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Toshiba | GP BJT | NPN | Bipolar Power | Si | Single | 50 | 1 | 100 | 7 | 1.1@20mA@1A | 2.5 | 200 to 300|300 to 500 | 200@1A@2V|400@0.3A@2V | 625 | 0.14@20mA@1A | Tape and Reel | 3 | TSM | SOT | No | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TK170V65Z,LQ(S
Trans MOSFET N-CH 650V 18A 5-Pin DFN EP
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Bestand
2.400
Von 1,2333 € bis 2,8835 €
pro Stück
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Toshiba | MOSFETs | Power MOSFET | N | Single Triple Source | Enhancement | 1 | 650 | ±30 | 18 | 170@10V | 29@10V | 150000 | 1635@300V | 5 | DFN EP | DFN | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TRS12E65C,S1AQ(S
Diode Schottky SiC 650V 12A 2-Pin(2+Tab) TO-220-L Tube
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Bestand
50
Von 6,7311 € bis 10,2487 €
pro Stück
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Toshiba | Gleichrichter | Schottky Diode | SiC | Single | 650 | 12 | 1.7 | 90 | Tube | 2 | TO-220-L | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
RN1106,LF(CT
Trans Digital BJT NPN 50V 0.1A 100mW 3-Pin SSM T/R
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Bestand
1.058
Von 0,0424 € bis 0,106 €
pro Stück
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Toshiba | Digital-BJT | NPN | Single | 50 | 4.7 | 0.1 | 0.1 | 80@10mA@5V | 100 | 0.3@0.25mA@5mA | Tape and Reel | 3 | SSM | No | Unknown | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TK100A06N1,S4X(S
Trans MOSFET N-CH Si 60V 263A 3-Pin(3+Tab) TO-220SIS Magazine
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Bestand
750
1,6236 €
pro Stück
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 60 | ±20 | 263 | 2.7@10V | 140@10V | 140 | 45000 | 10500@30V | Magazine | 3 | TO-220SIS | TO | No | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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1SS378(TE85L,F)
Diode Small Signal Schottky 15V 0.2A 3-Pin USM T/R
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Bestand
2.075
Von 0,0564 € bis 0,119 €
pro Stück
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Toshiba | Gleichrichter | Small Signal Schottky Diode | Dual Common Cathode | 15 | 0.2 | 1 | 0.5@0.1A | 20 | 100 | Tape and Reel | 3 | USM | No | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TK9P65W,RQ
Trans MOSFET N-CH Si 650V 9.3A 3-Pin(2+Tab) DPAK T/R
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Bestand
1.864
0,5611 €
pro Stück
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 650 | ±30 | 9.3 | 560@10V | 20@10V | 20 | 80000 | 700@300V | Tape and Reel | 3 | DPAK | TO | No | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TK7R4A15Q5,S4X
Silicon N-channel MOSFET
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Bestand
394
Von 1,4739 € bis 1,8474 €
pro Stück
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Toshiba | MOSFETs | 3 | TO-220SIS | TO | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
HN1C01FUGRLFT
Trans GP BJT NPN 50V 0.15A 200mW 6-Pin US T/R
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Bestand
1.050
Von 0,0294 € bis 0,0624 €
pro Stück
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Toshiba | GP BJT | NPN | Bipolar Small Signal | Si | Dual | 50 | 2 | 60 | 5 | 0.15 | 200 to 300 | 200@2mA@6V | 200 | 0.25@10mA@100mA | Tape and Reel | 6 | US | No | Unknown | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TPH1R306P1,L1Q(M
Trans MOSFET N-CH Si 60V 100A 8-Pin SOP Advance
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Bestand
1.087
Von 0,8459 € bis 1,9716 €
pro Stück
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single Quad Drain Triple Source | Enhancement | 1 | 60 | ±20 | 100 | 1.28@10V | 44@4.5V|91@10V | 3000 | 6250@30V | 8 | SOP Advance | SO | No | No | No | No | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SC2712-BL,LF
Trans GP BJT NPN 50V 0.15A 200mW 3-Pin S-Mini T/R Automotive AEC-Q101
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Bestand
12.000
Von 0,0165 € bis 0,0278 €
pro Stück
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Toshiba | GP BJT | NPN | Bipolar Small Signal | Si | Single | 50 | 1 | 60 | 5 | 0.15 | 300 to 500 | 350@2mA@6V | 200 | 0.25@10mA@100mA | 2 | 10 | Tape and Reel | 3 | S-Mini | SOT | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TK110U65Z,RQ
Trans MOSFET N-CH Si 650V 24A 9-Pin(8+Tab) TOLL T/R
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Bestand
1.960
1,4774 €
pro Stück
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single Hex Source | Enhancement | 1 | 650 | ±30 | 4 | 24 | 110@10V | 40@10V | 40 | 190000 | 2250@300V | DTMOSVI | Tape and Reel | 9 | TOLL | No | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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RN1101,LF(CT
Trans Digital BJT NPN 50V 0.1A 100mW 3-Pin SSM T/R
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Bestand
630
Von 0,0439 € bis 0,0973 €
pro Stück
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Toshiba | Digital-BJT | NPN | Single | 50 | 4.7 | 1 | 0.1 | 30@10mA@5V | 100 | 0.3@0.25mA@5mA | Tape and Reel | 3 | SSM | No | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TK40J20D,S1F(O
Trans MOSFET N-CH Si 200V 40A 3-Pin(3+Tab) TO-3PN
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Bestand
15
Von 1,077 € bis 1,242 €
pro Stück
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 200 | ±20 | 3.5 | 40 | 44@10V | 100@10V | 260000 | 4300@100V | 3 | TO-3PN | TO | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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RN1314,LXGF
Trans Digital BJT NPN 50V 0.1A 100mW 3-Pin USM T/R Automotive AEC-Q101
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Bestand
6.000
0,0102 €
pro Stück
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Toshiba | Digital-BJT | NPN | Single | 50 | 1 | 0.1 | 0.1 | 50@10mA@5V | 100 | 0.3@0.25mA@5mA | Tape and Reel | 3 | USM | No | Yes | AEC-Q101 | Yes | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TK055U60Z1,RQ(S Trans MOSFET N-CH Si 600V 40A 9-Pin(8+Tab) TOLL |
Bestand
141
Von 2,4058 € bis 3,7347 €
pro Stück
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single Hex Source | Enhancement | 1 | 600 | ±30 | 40 | 55@10V | 65@10V | 270000 | 3680@300V | 9 | TOLL | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
1SV322(TPH3,F)
Diode VAR Cap Single 10V 26.5pF 2-Pin USC T/R
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Bestand
2.923
0,3552 €
pro Stück
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Toshiba | Varaktors | TCXO|VCO | Single | 10 | 0.003 | 4 | 1V/4V | 26.5@1V | Tape and Reel | 2 | USC | SOD | No | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
1SS399(TE85L,F)
Diode Switching 420V 0.1A 4-Pin SMQ T/R
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Bestand
6.185
Von 0,0894 € bis 0,099 €
pro Stück
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Toshiba | Gleichrichter | Switching Diode | Dual Parallel | 420 | 0.1 | 2 | 1.3 | 0.1 | 500(Typ) | 200 | Tape and Reel | 4 | SMQ | SOT | No | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TK39N60W,S1VF(S
Trans MOSFET N-CH Si 600V 38.8A 3-Pin(3+Tab) TO-247
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Bestand
23
Von 5,0722 € bis 5,7757 €
pro Stück
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 600 | ±30 | 38.8 | 65@10V | 110@10V | 110 | 270000 | 4100@300V | 3 | TO-247 | TO | No | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SSM3K36MFV,L3F
Trans MOSFET N-CH Si 20V 0.5A 3-Pin VESM T/R Automotive AEC-Q101
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Bestand
10.612
Von 0,0407 € bis 0,1292 €
pro Stück
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Toshiba | MOSFETs | Small Signal | Si | N | Single | Enhancement | 1 | 20 | ±10 | 0.5 | 630@5V | 1.23@4V | 150 | 46@10V | Tape and Reel | 3 | VESM | SOT | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No |