TT Electronics / Semelab Diodes, Transistors and Thyristors
| Teile-Nr. | Preis | Bestand | Hersteller | Kategorie | Type | Material | Category | Channel Type | Configuration | Channel Mode | Peak Reverse Repetitive Voltage - (V) | Number of Elements per Chip | Maximum Collector-Emitter Voltage - (V) | Maximum Base-Emitter Saturation Voltage - (V) | Maximum Continuous Forward Current - (A) | Maximum Continuous DC Collector Current - (mA) | Maximum Collector-Base Voltage - (V) | Maximum Drain-Gate Voltage - (V) | Peak Non-Repetitive Forward Surge Current - (A) | Maximum Power Dissipation - (mW) | Maximum Drain-Source Voltage - (V) | Maximum Continuous Drain Current - (mA) | Maximum Base-Emitter Voltage - (V) | Maximum Gate-Source Voltage - (V) | Maximum Forward Voltage - (V) | Maximum DC Collector Current - (A) | Peak Reverse Current - (uA) | Operational Bias Conditions | Maximum Junction Ambient Thermal Resistance | Maximum Gate Threshold Voltage - (V) | Peak Reverse Recovery Time - (ns) | Minimum DC Current Gain Range | Minimum DC Current Gain | Maximum Drain-Source Resistance - (mOhm) | Typical Gate Charge @ Vgs - (nC) | Maximum Junction Case Thermal Resistance | Typical Input Capacitance - (pF) | Typical Gate Charge @ 10V - (nC) | Maximum Transition Frequency - (MHz) | Typical Output Capacitance - (pF) | Typical Input Capacitance @ Vds - (pF) | Minimum Frequency - (MHz) | Maximum Output Power - (W) | Maximum Collector-Emitter Saturation Voltage - (V) | Maximum Frequency - (MHz) | Typical Power Gain - (dB) | Maximum Noise Figure - (dB) | Maximum Turn-On Time - (ns) | Process Technology | Rad Hard | Pin Count | Supplier Package | Standard Package Name | CECC Qualified | ESD Protection | ESCC Qualified | Military | AEC Qualified | Auto motive | P PAP | ECCN Code | SVHC | SVHC Exceeds Threshold |
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| IRFY9140 Trans MOSFET P-CH 100V 13A 3-Pin(3+Tab) TO-257AB |
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Semelab | MOSFETs | Power MOSFET | P | Single | Enhancement | 1 | 60000 | 100 | 13 | ±20 | 4 | 240@10V | 60(Max)@10V | 60(Max) | 1400@25V | 3 | TO-257AB | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||
2N4209C1A
Trans GP BJT PNP 15V 0.05A 360mW 3-Pin CLLCC
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Semelab | GP BJT | PNP | Si | Bipolar Small Signal | Single | 1 | 15 | 0.8@0.1mA@1mA|0.95@1mA@10mA|1.5@5mA@50mA | 15 | 360 | 4.5 | 0.05 | 250 | 30 to 50|50 to 120 | 35@1mA@0.5V|50@10mA@0.3V|55@10mA@1V|40@50mA@1V | 3.5(Max) | 3(Max) | 0.15@0.1mA@1mA|0.18@1mA@10mA|0.6@5mA@50mA | 15 | 3 | CLLCC | LCC | No | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||
| D2013UK Trans RF MOSFET N-CH 65V 4A 5-Pin Case DK |
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Semelab | HF-MOSFETs | Si | N | Dual Common Source | Enhancement | 2 | 83000 | 65 | 4 | ±20 | 48(Max)@0V | 1 | 20 | 2000 | 10(Min) | 5 | Case DK | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||
| BDS19-QR-B Bipolar Pnp Device In A Hermetically Sealed Ceramic Surface Mount Package |
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Semelab | GP BJT | 3 | TO-220M | No | No | No | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| BDS13 Trans GP BJT PNP 60V 15A 43750mW 3-Pin(3+Tab) TO-257AB |
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Semelab | GP BJT | PNP | Si | Bipolar Power | Single | 1 | 60 | 2.5@2.5A@10A | 60 | 43750 | 5 | 15 | 2 to 30|30 to 50 | 40@0.5A@4V|15@5A@4V|5@10A@4V | 1@0.5A@5A|3@2.5A@10A | 3 | TO-257AB | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||
2N6796
Trans MOSFET N-CH 100V 7.2A 3-Pin TO-39
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Semelab | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 20833 | 100 | 7.2 | ±20 | 4 | 207@10V | 683@25V | 3 | TO-39 | TO | No | Unknown | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||
SML05SC06D3A
Diode Schottky 600V 5A 2-Pin DLCC
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Semelab | Gleichrichter | Schottky Diode | Single | 600 | 5 | 60 | 2960 | 1.8 | 200 | 2 | DLCC | LCC | No | No | No | No | No | 3A001.h | No | No | |||||||||||||||||||||||||||||||||||||||||
| BDX64B BIPOLAR PNP DEVICE IN A HERMETICALLY SEALED TO3 METAL PACKAGE |
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Semelab | Darlington BJT | 3 | TO-3 | TO | No | No | No | No | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||
| DMD1020 Trans RF MOSFET N-CH 70V 5-Pin Case D1 |
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Semelab | HF-MOSFETs | Si | N | Dual Common Source | Enhancement | 2 | 760000 | 70 | ±20 | 7 | 4(Min) | 300(Max)@28V | 1 | 500 | 13(Min) | 5 | Case D1 | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||
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BFX85
Trans GP BJT NPN 60V 1A 800mW 3-Pin TO-39
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Semelab | GP BJT | NPN | Si | Bipolar Power | Single | 1 | 60 | 1.2@1mA@10mA|1.3@15mA@150mA|1.5@50mA@500mA|2@100mA@1A | 100 | 800 | 1 | 200 | 2 to 30|30 to 50|50 to 120 | 50@10mA@10V|70@150mA@10V|30@500mA@10V|15@1A@10V | 35 | 7 | 0.2@1mA@10mA|0.35@15mA@150mA|1@50mA@500mA|1.6@100mA@1A | 55(Typ) | 3 | TO-39 | TO | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||
BUT90
Trans GP BJT NPN 125V 50A 250000mW 3-Pin(2+Tab) TO-3
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Semelab | GP BJT | NPN | Bipolar Power | Single | 1 | 125 | 250000 | 50 | 2 to 30 | 10 | 3 | TO-3 | TO | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||||
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2N2905A
Trans GP BJT PNP 60V 0.6A 800mW 3-Pin TO-39
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Semelab | GP BJT | PNP | Si | Bipolar Power | Single | 1 | 60 | 1.3@15mA@150mA|2.6@50mA@500mA | 60 | 800 | 5 | 0.6 | 50 to 120 | 75@0.1mA@10V|100@1mA@10V|100@10mA@10V|100@150mA@10V|50@500mA@10V | 0.4@15mA@150mA|1.6@50mA@500mA | 45 | 3 | TO-39 | TO | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||
| BYV32-200AM Diode Switching 200V 20A 3-Pin(3+Tab) TO-257AB |
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Semelab | Gleichrichter | Switching Diode | Dual Common Anode | 200 | 20 | 80 | 1.5 | 30 | 35 | 3 | TO-257AB | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||||
| 2N4036 Transistor BJT |
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Semelab | GP BJT | Unknown | Unknown | Unknown | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| D1025UK Trans RF MOSFET 70V 25A 5-Pin Case DT |
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Semelab | HF-MOSFETs | Si | Single Common Triple Source | 1 | 175000 | 70 | 25 | ±20 | 7 | 300(Max)@28V | 1 | 175 | 16(Min) | 5 | Case DT | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||
| D5006UK Trans RF MOSFET 125V 21A 6-Pin Case DV |
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Semelab | HF-MOSFETs | Si | Single Quad Source | 1 | 220000 | 125 | 21 | ±20 | 7 | 420(Max)@50V | 1 | 200 | 13(Min) | 6 | Case DV | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||
| BDS16-QR-B Trans GP BJT NPN 120V 8A 43750mW 3-Pin(3+Tab) TO-220M |
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Semelab | GP BJT | NPN | Si | Bipolar Power | Single | 1 | 120 | 120 | 43750 | 5 | 8 | 2 to 30|30 to 50 | 40@0.5A@2V|15@4A@2V | 0.4@0.05A@0.5A|1.5@0.4A@4A | 3 | TO-220M | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||
2N2907ACSM
Trans GP BJT PNP 60V 0.6A 3-Pin CLLCC-1
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Semelab | GP BJT | PNP | Si | Bipolar Small Signal | Single | 1 | 60 | 1.3@15mA@150mA|2.6@50mA@500mA | 60 | 500 | 5 | 0.6 | 325 | 50 to 120 | 75@0.1mA@10V|100@1mA@10V|100@10mA@10V|100@150mA@10V|50@500mA@10V | 0.4@15mA@150mA|1.6@50mA@500mA | 45 | 3 | CLLCC-1 | LCC | No | Unknown | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||
| BDX66A Trans Darlington PNP 80V 20A 150000mW 3-Pin(2+Tab) TO-3 |
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Semelab | Darlington BJT | PNP | Single | 1 | 80 | 20 | 80 | 150000 | 5 | 1000@10A@3V | 2@40mA@10A | 3 | TO-3 | TO | No | Unknown | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||
| D2214UK Trans RF MOSFET N-CH 40V 8A 3-Pin Case DP |
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Semelab | HF-MOSFETs | Si | N | Single | Enhancement | 1 | 42000 | 40 | 8 | ±20 | 7 | 48(Max)@0V | 0 | 1000 | 10(Min) | 3 | Case DP | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||
| 2N7085-QR-B Trans MOSFET N-CH 100V 20A 3-Pin(3+Tab) TO-257AB |
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Semelab | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 60000 | 100 | 20 | ±20 | 4 | 75@10V | 35@10V | 35 | 1400@25V | 3 | TO-257AB | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||
| BUY69A Trans GP BJT NPN 400V 10A 100000mW 3-Pin(2+Tab) TO-3 |
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Semelab | GP BJT | NPN | Bipolar Power | Single | 1 | 400 | 100000 | 10 | 2 to 30 | 15@2.5A@10V | 3 | TO-3 | TO | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||||
| IRFE024 Trans MOSFET N-CH 60V 6.7A 16-Pin LCC-4 |
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Semelab | MOSFETs | Power MOSFET | N | Single Hex Drain Dual Gate Octal Source | Enhancement | 1 | 14000 | 60 | 6.7 | ±20 | 4 | 170@10V | 26(Max)@10V | 26(Max) | 640@25V | 16 | LCC-4 | LCC | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||
| D1031UK Trans RF MOSFET 70V 5A 8-Pin Case F-0127 |
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Semelab | HF-MOSFETs | Si | Dual Quad Source | 2 | 30000 | 70 | 5 | ±20 | 7 | 60(Max)@0V | 1 | 10 | 1000 | 13(Min) | 8 | Case F-0127 | No | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||
| D2009UK Trans RF MOSFET 65V 2A 5-Pin Case DQ |
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Semelab | HF-MOSFETs | Si | Dual Common Source | 2 | 58000 | 65 | 2 | ±20 | 7 | 24(Max)@28V | 50 | 1000 | 10(Min) | 5 | Case DQ | No | No | No | No | No | EAR99 | No | No |