TT Electronics / Semelab Diodes, Transistors and Thyristors
| Teile-Nr. | Preis | Bestand | Hersteller | Kategorie | Type | Category | Material | Channel Type | Configuration | Channel Mode | Peak Reverse Repetitive Voltage - (V) | Maximum Collector-Emitter Voltage - (V) | Number of Elements per Chip | Maximum Continuous Forward Current - (mA) | Maximum Collector-Base Voltage - (V) | Maximum Drain-Gate Voltage - (V) | Maximum Base-Emitter Voltage - (V) | Peak Non-Repetitive Forward Surge Current - (A) | Maximum Forward Voltage - (V) | Maximum Drain-Source Voltage - (V) | Maximum Base-Emitter Saturation Voltage - (V) | Peak Reverse Current - (uA) | Maximum Gate-Source Voltage - (V) | Maximum DC Collector Current - (A) | Maximum Continuous DC Collector Current - (A) | Operational Bias Conditions | Maximum Gate Threshold Voltage - (V) | Maximum Continuous Drain Current - (A) | Peak Reverse Recovery Time - (ns) | Minimum DC Current Gain Range | Minimum DC Current Gain | Maximum Drain-Source Resistance - (mOhm) | Typical Gate Charge @ Vgs - (nC) | Maximum Junction Ambient Thermal Resistance | Maximum Junction Case Thermal Resistance | Typical Input Capacitance - (pF) | Typical Gate Charge @ 10V - (nC) | Maximum Power Dissipation - (mW) | Maximum Collector-Emitter Saturation Voltage - (V) | Typical Output Capacitance - (pF) | Typical Input Capacitance @ Vds - (pF) | Minimum Frequency - (MHz) | Maximum Output Power - (W) | Typical Power Gain - (dB) | Maximum Transition Frequency - (MHz) | Maximum Noise Figure - (dB) | Maximum Turn-On Time - (ns) | Process Technology | Rad Hard | Pin Count | Supplier Package | Standard Package Name | CECC Qualified | ESD Protection | ESCC Qualified | Military | AEC Qualified | Auto motive | P PAP | ECCN Code | SVHC | SVHC Exceeds Threshold |
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| 2N3441 Trans GP BJT NPN 140V 3A 25000mW 3-Pin(2+Tab) TO-66 |
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Semelab | GP BJT | NPN | Bipolar Power | Si | Single | 140 | 1 | 160 | 7 | 3 | 2 to 30 | 25@0.5A@4V|5@2.7A@4V | 25000 | 6@0.9A@2.7A | 3 | TO-66 | TO | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||
BCY70
Trans GP BJT PNP 40V 350mW 3-Pin TO-18
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Semelab | GP BJT | PNP | Bipolar Small Signal | Si | Single | 40 | 1 | 50 | 5 | 1.2@5mA@50mA | 2 to 30 | 15@50mA@1V | 350 | 0.5@5mA@50mA | 3 | TO-18 | TO | No | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||
| D1202UK Trans RF MOSFET 40V 20A 3-Pin Case DP |
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Semelab | HF-MOSFETs | Si | Single | 1 | 40 | ±20 | 7 | 20 | 87000 | 120(Max)@0V | 1 | 10(Min) | 3 | Case DP | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||
| D2014UK Trans RF MOSFET N-CH 65V 1A 6-Pin SOT-171 |
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Semelab | HF-MOSFETs | Si | N | Single Quad Source | 1 | 65 | ±20 | 1 | 17500 | 12(Max)@28V | 0 | 13(Min) | 6 | SOT-171 | SOT | No | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||
| D2015UK Trans RF MOSFET 65V 2A 6-Pin SOT-171 |
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Semelab | HF-MOSFETs | Si | Single Quad Source | 1 | 65 | ±20 | 7 | 2 | 29000 | 20(Max)@0V | 13(Min) | 6 | SOT-171 | SOT | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||
| D2082UK Trans MOSFET 65V 5-Pin Case DK |
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Semelab | MOSFETs | Dual Common Source | 2 | 65 | 7 | 86@0V | 5 | Case DK | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||||||
| BDY57 Trans GP BJT NPN 80V 25A 175000mW 3-Pin(2+Tab) TO-3 |
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Semelab | GP BJT | NPN | Bipolar Power | Single | 80 | 1 | 25 | 2 to 30 | 20@10A@4V | 175000 | 3 | TO-3 | TO | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||
| BDY78 Trans GP BJT NPN 55V 4A 36000mW 3-Pin(2+Tab) TO-66 |
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Semelab | GP BJT | NPN | Bipolar Power | Single | 55 | 1 | 4 | 2 to 30 | 25@0.5A@4V | 36000 | 3 | TO-66 | TO | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||
| BDY71X Trans GP BJT NPN 55V 4A 3-Pin(2+Tab) TO-66 |
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Semelab | GP BJT | NPN | Bipolar Power | Single | 55 | 1 | 4 | 50 to 120 | 80@0.5A@4V | 29000 | 3 | TO-66 | TO | No | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||
| IRFE130 Trans MOSFET N-CH 100V 7.4A 16-Pin LCC-4 |
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Semelab | MOSFETs | Power MOSFET | N | Single Hex Drain Dual Gate Octal Source | Enhancement | 1 | 100 | ±20 | 4 | 7.4 | 207@10V | 28.5(Max)@10V | 28.5(Max) | 22000 | 650@25V | 16 | LCC-4 | LCC | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||
2N2222ADCSM
Trans GP BJT NPN 50V 0.8A 6-Pin CLLCC-2
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Semelab | GP BJT | NPN | Bipolar Power | Single | 50 | 1 | 75 | 6 | 1.2@15mA@150mA|2@50mA@500mA | 0.8 | 30 to 50|50 to 120 | 50@0.1mA@10V|75@1mA@10V|100@10mA@10V|100@150mA@10V|30@500mA@10V | 325 | 500 | 0.3@15mA@150mA|1@50mA@500mA | 250 | 35 | 6 | CLLCC-2 | LCC | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||
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2N3209X
Trans GP BJT PNP 20V 0.2A 360mW 3-Pin TO-18
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Semelab | GP BJT | PNP | Bipolar Power | Si | Single | 20 | 1 | 20 | 4 | 0.98@1mA@10mA|1.2@3mA@30mA|1.7@10mA@100mA | 0.2 | 2 to 30|30 to 50 | 25@10mA@0.3V|30@30mA@0.5V|15@100mA@1V | 486 | 146 | 6(Max) | 360 | 0.2@1mA@10mA|0.25@3mA@30mA|0.75@10mA@100mA | 5(Max) | 60 | 3 | TO-18 | TO | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||
| BDS20 Trans GP BJT NPN 80V 5A 3-Pin(3+Tab) TO-257AB |
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Semelab | GP BJT | NPN | Bipolar Power | Si | Single | 80 | 1 | 80 | 5 | 5 | 500 to 3600 | 1000@0.5A@3V|1000@3A@3V | 35000 | 2@12mA@3A|4@20mA@5A | 3 | TO-257AB | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||
| D1010UK Trans RF MOSFET N-CH 70V 20A 5-Pin Case DR |
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Semelab | HF-MOSFETs | Si | N | Dual Common Source | Enhancement | 2 | 70 | ±20 | 20 | 389000 | 240(Max)@0V | 1 | 125 | 10(Min) | 5 | Case DR | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||
| D2089UK Trans RF MOSFET N-CH 65V 1A 4-Pin Case E-16 |
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Semelab | HF-MOSFETs | Si | N | Single Dual Source | 1 | 65 | ±20 | 1 | 4000 | 12(Max)@0V | 0 | 0.75(Min) | 4 | Case E-16 | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||
| D2012UK Trans RF MOSFET N-CH 65V 4A 3-Pin Case DP |
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Semelab | HF-MOSFETs | Si | N | Single | Enhancement | 1 | 65 | ±20 | 4 | 42000 | 48(Max)@0V | 50 | 10 | 10(Min) | 3 | Case DP | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||
| 2N2222ACSM-B Silicon Switching NPN Transistor |
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Semelab | GP BJT | 3 | CLLCC-1 | LCC | No | No | No | No | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||
2N3700DCSM-QR-B
HIGH VOLTAGE MEDIUM POWER NPN DUAL TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE
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Semelab | GP BJT | Si | 6 | CLLCC-2 | LCC | No | No | No | No | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||
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2N3963
Trans GP BJT PNP 80V 0.2A 360mW 3-Pin TO-18
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Semelab | GP BJT | PNP | Bipolar Power | Single | 80 | 1 | 0.2 | 50 to 120 | 100@1mA@5V | 360 | 3 | TO-18 | TO | No | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||
| 2N5038 Trans GP BJT NPN 90V 20A 140000mW 3-Pin(2+Tab) TO-3 |
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Semelab | GP BJT | NPN | Bipolar Power | Single | 90 | 1 | 150 | 7 | 20 | 2 to 30 | 20@12A@5V | 140000 | 3 | TO-3 | TO | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||
2N5333
Trans GP BJT PNP 80V 2A 1000mW 3-Pin TO-39
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Semelab | GP BJT | PNP | Bipolar Power | Single | 80 | 1 | 2 | 30 to 50 | 30@1A@4V | 1000 | 3 | TO-39 | TO | No | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||
2N5416CSM4
Trans GP BJT PNP 300V 1A 1000mW 4-Pin CLLCC-3
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Semelab | GP BJT | PNP | Bipolar Power | Si | Single | 300 | 1 | 350 | 6 | 1 | 30 to 50 | 30@50mA@10V | 150 | 1000 | 0.5@5mA@50mA | 25(Max) | 4 | CLLCC-3 | LCC | No | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||
| 2N6678M3A-JQRS NPN Silicon Transistor |
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Semelab | GP BJT | No | No | No | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
2N7002CSM-QR-B
Trans MOSFET N-CH 60V 0.115A 3-Pin CLLCC-1
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Semelab | MOSFETs | Small Signal | N | Single | Enhancement | 1 | 60 | ±40 | 0.115 | 7500@10V | 350 | 50(Max)@25V | 3 | CLLCC-1 | LCC | No | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||
2N6849-QR-B
Trans MOSFET P-CH 100V 5.8A 3-Pin TO-39
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Semelab | MOSFETs | Power MOSFET | P | Single | Enhancement | 1 | 100 | ±20 | 5.8 | 300@10V | 25@15V | 20833 | 845@25V | 3 | TO-39 | TO | No | No | No | No | No | EAR99 | No | No |