TT Electronics / Semelab Diodes, Transistors and Thyristors
| Teile-Nr. | Preis | Bestand | Hersteller | Kategorie | Type | Category | Material | Channel Type | Configuration | Channel Mode | Peak Reverse Repetitive Voltage - (V) | Maximum Collector-Emitter Voltage - (V) | Number of Elements per Chip | Maximum Continuous Forward Current - (mA) | Maximum Collector-Base Voltage - (V) | Maximum Drain-Gate Voltage - (V) | Maximum Base-Emitter Voltage - (V) | Peak Non-Repetitive Forward Surge Current - (A) | Maximum Forward Voltage - (V) | Maximum Drain-Source Voltage - (V) | Maximum Base-Emitter Saturation Voltage - (V) | Peak Reverse Current - (uA) | Maximum Gate-Source Voltage - (V) | Maximum DC Collector Current - (A) | Maximum Continuous DC Collector Current - (A) | Operational Bias Conditions | Maximum Gate Threshold Voltage - (V) | Maximum Continuous Drain Current - (A) | Peak Reverse Recovery Time - (ns) | Minimum DC Current Gain Range | Minimum DC Current Gain | Maximum Drain-Source Resistance - (mOhm) | Typical Gate Charge @ Vgs - (nC) | Maximum Junction Ambient Thermal Resistance | Maximum Junction Case Thermal Resistance | Typical Input Capacitance - (pF) | Typical Gate Charge @ 10V - (nC) | Maximum Power Dissipation - (mW) | Maximum Collector-Emitter Saturation Voltage - (V) | Typical Output Capacitance - (pF) | Typical Input Capacitance @ Vds - (pF) | Minimum Frequency - (MHz) | Maximum Output Power - (W) | Typical Power Gain - (dB) | Maximum Transition Frequency - (MHz) | Maximum Noise Figure - (dB) | Maximum Turn-On Time - (ns) | Process Technology | Rad Hard | Pin Count | Supplier Package | Standard Package Name | CECC Qualified | ESD Protection | ESCC Qualified | Military | AEC Qualified | Auto motive | P PAP | ECCN Code | SVHC | SVHC Exceeds Threshold |
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| BDS21 Trans GP BJT PNP 80V 5A 3-Pin(3+Tab) TO-257AB |
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Semelab | GP BJT | PNP | Bipolar Power | Si | Single | 80 | 1 | 80 | 5 | 5 | 500 to 3600 | 1000@0.5A@3V|1000@3A@3V | 35000 | 2@12mA@3A|4@20mA@5A | 3 | TO-257AB | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||
| BDY57 Trans GP BJT NPN 80V 25A 175000mW 3-Pin(2+Tab) TO-3 |
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Semelab | GP BJT | NPN | Bipolar Power | Single | 80 | 1 | 25 | 2 to 30 | 20@10A@4V | 175000 | 3 | TO-3 | TO | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||
2N5551CSM-JQR-B
Trans GP BJT NPN 160V 0.6A 350mW 3-Pin CLLCC-1
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Semelab | GP BJT | NPN | Bipolar Small Signal | Single | 160 | 1 | 180 | 6 | 1@1mA@10mA|1@5mA@50mA | 0.6 | 30 to 50|50 to 120 | 80@1mA@5V|80@10mA@5V|30@50mA@5V | 350 | 0.15@1mA@10mA|0.2@5mA@50mA | 300 | 3 | CLLCC-1 | LCC | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||
| D1213UK Trans RF MOSFET 40V 20A 8-Pin DBC1 |
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Semelab | HF-MOSFETs | Si | Dual Quad Source | 2 | 40 | ±20 | 20 | 58000 | 120(Max)@0V | 1 | 6 | 10(Min) | 8 | DBC1 | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||
2N2222A-JQR
Trans GP BJT NPN 50V 0.8A 500mW 3-Pin TO-18
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Semelab | GP BJT | NPN | Bipolar Small Signal | Single | 50 | 1 | 75 | 6 | 1.2@15mA@150mA|2@50mA@500mA | 0.8 | 30 to 50|50 to 120 | 35@0.1mA@10V|50@1mA@1V|75@10mA@10V|100@150mA@10V|50@150mA@1V|40@500mA@10V | 500 | 0.3@15mA@150mA|1@50mA@500mA | 250 | 3 | TO-18 | TO | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||
BDS20SMD
Trans GP BJT NPN 80V 5A 3-Pin SMD-1
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Semelab | GP BJT | NPN | Bipolar Power | Si | Single | 80 | 1 | 80 | 5 | 5 | 500 to 3600 | 1000@0.5A@3V|1000@3A@3V | 35000 | 2@12mA@3A|4@20mA@5A | 3 | SMD-1 | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||
| IRF9230 Trans MOSFET P-CH 200V 6.5A 3-Pin(2+Tab) TO-3 |
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Semelab | MOSFETs | Power MOSFET | P | Single | Enhancement | 1 | 200 | ±20 | 6.5 | 920@10V | 31(Max)@10V | 31(Max) | 75000 | 700@25V | 3 | TO-3 | TO | No | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||
| 2N3441 Trans GP BJT NPN 140V 3A 25000mW 3-Pin(2+Tab) TO-66 |
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Semelab | GP BJT | NPN | Bipolar Power | Si | Single | 140 | 1 | 160 | 7 | 3 | 2 to 30 | 25@0.5A@4V|5@2.7A@4V | 25000 | 6@0.9A@2.7A | 3 | TO-66 | TO | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||
| 2N6686 Trans GP BJT NPN 180V 25A 3-Pin(2+Tab) TO-3 |
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Semelab | GP BJT | NPN | Bipolar Power | Single | 180 | 1 | 8 | 1.8@2.5A@25A | 25 | 2 to 30|30 to 50 | 15@25A@2V|30@1A@2V|25@10A@2V | 200000 | 1.5@2.5A@25A | 100 | 3 | TO-3 | TO | No | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||
| BYV32-200M Diode Switching 200V 20A 3-Pin(3+Tab) TO-257AB |
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Semelab | Gleichrichter | Switching Diode | Dual Common Cathode | 200 | 20 | 80 | 1.5 | 30 | 35 | 3 | TO-257AB | No | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||
BUR52
Trans GP BJT NPN 250V 60A 3-Pin(2+Tab) TO-3
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Semelab | GP BJT | NPN | Bipolar Power | Single | 250 | 1 | 350 | 10 | 1.8@2A@25A|2@4A@40A | 60 | 2 to 30 | 20@5A@4V|15@40A@4V | 350000 | 1@2A@25A|1.5@4A@40A | 3 | TO-3 | TO | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||
| BDX67 Trans Darlington NPN 60V 16A 150000mW 3-Pin(2+Tab) TO-3 |
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Semelab | Darlington BJT | NPN | Single | 60 | 1 | 80 | 5 | 16 | 1000@10A@3V | 150000 | 2@40mA@10A | 3 | TO-3 | TO | No | Unknown | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||
2N6849-QR-B
Trans MOSFET P-CH 100V 5.8A 3-Pin TO-39
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Semelab | MOSFETs | Power MOSFET | P | Single | Enhancement | 1 | 100 | ±20 | 5.8 | 300@10V | 25@15V | 20833 | 845@25V | 3 | TO-39 | TO | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||
2N3700DCSM
Trans GP BJT NPN 80V 1A 525mW 6-Pin CLLCC-2
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Semelab | GP BJT | NPN | Bipolar Power | Si | Dual | 80 | 2 | 140 | 7 | 1.1@15mA@150mA | 1 | 2 to 30|30 to 50|50 to 120 | 50@0.1mA@10V|90@10mA@10V|100@150mA@10V|50@500mA@10V|15@1A@10V | 240 | 60(Max) | 525 | 0.5@50mA@500mA|0.2@15mA@150mA | 12(Max) | 200 | 6 | CLLCC-2 | LCC | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||
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BUV20
Trans GP BJT NPN 125V 50A 250000mW 3-Pin(2+Tab) TO-3
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Semelab | GP BJT | NPN | Bipolar Power | Single | 125 | 1 | 160 | 7 | 2@5A@50A | 50 | 2 to 30 | 10@50A@4V|20@25A@2V | 250000 | 1.2@5A@50A | 1500 | 3 | TO-3 | TO | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||
| BDY58S Trans GP BJT NPN 125V 25A 175000mW 3-Pin(2+Tab) TO-3 |
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Semelab | GP BJT | NPN | Bipolar Power | Single | 125 | 1 | 25 | 2 to 30 | 20@10A@4V | 175000 | 3 | TO-3 | TO | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||
| 2N4902X Trans GP BJT PNP 60V 5A 3-Pin(2+Tab) TO-3 |
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Semelab | GP BJT | PNP | Bipolar Power | Single | 60 | 1 | 5 | 2 to 30 | 20@1A@2V | 87000 | 4 | 3 | TO-3 | TO | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||
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BUP49
Trans GP BJT NPN 80V 90A 3-Pin(2+Tab) TO-3
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Semelab | GP BJT | NPN | Bipolar Power | Single | 80 | 1 | 90 | 2 to 30 | 15@80A@4V | 300000 | 3 | TO-3 | TO | No | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||
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2N4392CSM
Trans JFET N-CH 40V Si 3-Pin CLLCC-1
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Semelab | JFETs | Si | N | Single | 40 | 40 | 40 | 60000 | 14(Max) | 300 | 3 | CLLCC-1 | LCC | No | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||
| 2N3741R Trans GP BJT PNP 80V 4A 25000mW 3-Pin(2+Tab) TO-66 |
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Semelab | GP BJT | PNP | Bipolar Power | Si | Single | 80 | 1 | 80 | 7 | 4 | 2 to 30|30 to 50 | 40@100mA@1V|30@250mA@1V|20@500mA@1V|10@1A@1V | 25000 | 0.6@125mA@1A | 100(Max) | 3 | TO-66 | TO | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||
| IRFF9130 Trans MOSFET P-CH 100V 5.8A 3-Pin TO-39 |
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Semelab | MOSFETs | Power MOSFET | P | Single | Enhancement | 1 | 100 | ±20 | 5.8 | 300@10V | 25@15V | 20833 | 845@25V | 3 | TO-39 | TO | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||
| BDY78 Trans GP BJT NPN 55V 4A 36000mW 3-Pin(2+Tab) TO-66 |
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Semelab | GP BJT | NPN | Bipolar Power | Single | 55 | 1 | 4 | 2 to 30 | 25@0.5A@4V | 36000 | 3 | TO-66 | TO | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||
| 2N2896X Trans GP BJT NPN 90V 1A 500mW 3-Pin TO-18 |
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Semelab | GP BJT | NPN | Bipolar Small Signal | Si | Single | 90 | 1 | 140 | 7 | 1.2@15mA@150mA | 1 | 30 to 50|50 to 120 | 35@1mA@10V|60@150mA@10V | 350 | 97 | 80(Max) | 500 | 0.6@15mA@150mA | 15(Max) | 3 | TO-18 | TO | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||
| BUX43 Trans GP BJT NPN 325V 10A 120000mW 3-Pin(2+Tab) TO-3 |
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Semelab | GP BJT | NPN | Bipolar Power | Single | 325 | 1 | 10 | 2 to 30 | 15@3A@4V | 120000 | 3 | TO-3 | TO | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||
| IRFY120-QR-B N-CHANNEL POWER MOSFET FOR HI-REL APPLICATIONS |
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Semelab | MOSFETs | 3 | TO-257AB | No | No | No | No | No | No | No |