TT Electronics / Semelab Diodes, Transistors and Thyristors
| Teile-Nr. | Preis | Bestand | Hersteller | Kategorie | Type | Category | Material | Channel Type | Configuration | Channel Mode | Peak Reverse Repetitive Voltage - (V) | Maximum Collector-Emitter Voltage - (V) | Maximum Continuous Forward Current - (A) | Maximum Collector-Base Voltage - (V) | Number of Elements per Chip | Maximum Drain-Gate Voltage - (V) | Maximum Continuous DC Collector Current - (A) | Maximum Base-Emitter Voltage - (V) | Peak Non-Repetitive Forward Surge Current - (A) | Maximum Forward Voltage - (V) | Maximum Drain-Source Voltage - (V) | Maximum Base-Emitter Saturation Voltage - (V) | Peak Reverse Current - (uA) | Maximum Gate-Source Voltage - (V) | Maximum DC Collector Current - (A) | Operational Bias Conditions | Maximum Junction Ambient Thermal Resistance | Maximum Gate Threshold Voltage - (V) | Maximum Power Dissipation - (mW) | Maximum Continuous Drain Current - (A) | Peak Reverse Recovery Time - (ns) | Minimum DC Current Gain Range | Minimum DC Current Gain | Maximum Drain-Source Resistance - (mOhm) | Typical Gate Charge @ Vgs - (nC) | Maximum Junction Case Thermal Resistance | Typical Gate Charge @ 10V - (nC) | Typical Output Capacitance - (pF) | Typical Input Capacitance @ Vds - (pF) | Typical Power Gain - (dB) | Minimum Frequency - (MHz) | Maximum Output Power - (W) | Maximum Collector-Emitter Saturation Voltage - (V) | Maximum Frequency - (MHz) | Maximum Transition Frequency - (MHz) | Maximum Noise Figure - (dB) | Process Technology | Rad Hard | Pin Count | Supplier Package | Standard Package Name | CECC Qualified | ESD Protection | ESCC Qualified | Military | AEC Qualified | Auto motive | P PAP | ECCN Code | SVHC | SVHC Exceeds Threshold |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 2N6250 Trans GP BJT NPN 275V 10A 100000mW 3-Pin(2+Tab) TO-3 |
|
Semelab | GP BJT | NPN | Bipolar Power | Single | 275 | 1 | 10 | 100000 | 2 to 30 | 8@10A@3V | 3 | TO-3 | TO | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||
| D2017UK Trans RF MOSFET 65V 2A 3-Pin Case DP |
|
Semelab | HF-MOSFETs | Si | Single | 1 | 65 | ±20 | 7 | 29000 | 2 | 20(Max)@0V | 13(Min) | 1000 | 3 | Case DP | No | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||
2N3501DCSM
Trans GP BJT NPN 150V 0.3A 500mW 6-Pin CLLCC-2
|
|
Semelab | GP BJT | NPN | Bipolar Small Signal | Si | Dual | 150 | 150 | 2 | 6 | 0.8@1mA@10mA|0.9@5mA@50mA | 0.3 | 500 | 2 to 30|30 to 50|50 to 120 | 35@0.1mA@10V|50@1mA@10V|75@10mA@10V|100@150mA@10V|20@300mA@10V | 0.2@1mA@10mA|0.25@5mA@50mA|0.4@15mA@150mA | 6 | CLLCC-2 | LCC | Unknown | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||
| BDS10 Trans GP BJT NPN 60V 15A 43750mW 3-Pin(3+Tab) TO-257AB |
|
Semelab | GP BJT | NPN | Bipolar Power | Si | Single | 60 | 60 | 1 | 5 | 2.5@2.5A@10A | 15 | 43750 | 2 to 30|30 to 50 | 40@0.5A@4V|15@5A@4V|5@10A@4V | 1@0.5A@5A|3@2.5A@10A | 3 | TO-257AB | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||
| IRFY240-QR-B Trans MOSFET N-CH 200V 12A 3-Pin(3+Tab) TO-257AB |
|
Semelab | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 200 | ±20 | 4 | 60000 | 12 | 220@10V | 60@10V | 60 | 1300@25V | 3 | TO-257AB | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||
2N3053
Trans GP BJT NPN 40V 0.7A 1000mW 3-Pin TO-39
|
|
Semelab | GP BJT | NPN | Bipolar Power | Si | Single | 40 | 60 | 1 | 5 | 1.7@0.015A@0.15A | 0.7 | 1000 | 30 to 50 | 50@150mA@10V | 1.4@0.015A@0.15A | 3 | TO-39 | TO | No | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||
| BDY25B Trans GP BJT NPN 140V 6A 50000mW 3-Pin(2+Tab) TO-3 |
|
Semelab | GP BJT | NPN | Bipolar Power | Single | 140 | 200 | 1 | 10 | 1.2@0.25A@2A | 6 | 50000 | 30 to 50 | 30@2A@4V | 65 | 0.6@0.25A@2A | 3 | TO-3 | TO | No | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||
BUP53
Trans GP BJT NPN 250V 60A 3-Pin(2+Tab) TO-3
|
|
Semelab | GP BJT | NPN | Bipolar Power | Si | Single | 250 | 1 | 10 | 1.1@2A@20A|1.4@5A@50A | 60 | 300000 | 2 to 30 | 12@20A@4V|5@50A@4V | 0.6@2A@20A|0.8@8A@50A | 3 | TO-3 | TO | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||
2N2907ACSM-QR-B
Trans GP BJT PNP 60V 0.6A 3-Pin CLLCC-1
|
|
Semelab | GP BJT | PNP | Bipolar Small Signal | Si | Single | 60 | 60 | 1 | 5 | 1.3@15mA@150mA|2.6@50mA@500mA | 0.6 | 500 | 50 to 120 | 75@0.1mA@10V|100@1mA@10V|100@10mA@10V|100@150mA@10V|50@500mA@10V | 0.4@15mA@150mA|1.6@50mA@500mA | 3 | CLLCC-1 | LCC | No | Unknown | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||
| BDX62B BIPOLAR PNP DEVICE IN A HERMETICALLY SEALED TO3 METAL PACKAGE |
|
Semelab | Darlington BJT | 3 | TO-3 | TO | No | No | No | No | No | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||
2N6661
Trans MOSFET N-CH 90V 0.9A 3-Pin TO-39
|
|
Semelab | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 90 | ±20 | 2 | 725 | 0.9 | 4000@10V | 50(Max)@25V | 3 | TO-39 | TO | No | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||
| D1211UKTR Trans RF MOSFET N-CH 40V 10A 8-Pin SO |
|
Semelab | HF-MOSFETs | Si | N | Single Dual Drain Dual Gate Quad Source | Enhancement | 1 | 40 | ±20 | 30000 | 10 | 60(Max)@0V | 10(Min) | 1 | 10 | 1000 | 8 | SO | SO | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||
2N3700CSM
Trans GP BJT NPN 80V 1A 3-Pin CLLCC-1
|
|
Semelab | GP BJT | NPN | Bipolar Power | Si | Single | 80 | 140 | 1 | 7 | 1.1@15mA@150mA | 1 | 500 | 2 to 30|30 to 50|50 to 120 | 50@0.1mA@10V|90@10mA@10V|100@150mA@10V|50@500mA@10V|15@1A@10V | 0.2@15mA@150mA|0.5@50mA@500mA | 3 | CLLCC-1 | LCC | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||
2N6796-JQR-B
TMOS FET ENHANCEMENT N - CHANNEL
|
|
Semelab | MOSFETs | 3 | TO-39 | TO | No | Unknown | No | No | No | No | No | No | |||||||||||||||||||||||||||||||||||||||||||||||
| BDY28B Trans GP BJT NPN 250V 6A 50000mW 3-Pin(2+Tab) TO-3 |
|
Semelab | GP BJT | NPN | Bipolar Power | Single | 250 | 500 | 1 | 10 | 1.2@0.25A@2A | 6 | 50000 | 30 to 50 | 30@2A@4V | 3.5 | 65 | 0.6@0.25A@2A | 3 | TO-3 | TO | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||
2N3055
Trans GP BJT NPN 60V 15A 115000mW 3-Pin(2+Tab) TO-3
|
|
Semelab | GP BJT | NPN | Bipolar Power | Si | Single | 60 | 100 | 1 | 7 | 15 | 115000 | 2 to 30 | 20@4A@4V | 0.75@0.4A@4A|2@3.3A@10A | 3 | TO-3 | TO | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||
| BUZ50A-220M-ISO Fet Devices |
|
Semelab | JFETs | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SB16-45M-B Dual Schottky Barrier Diode |
|
Semelab | Gleichrichter | Schottky Diode | Dual Common Cathode | 45 | 16 | 245 | 0.8 | 500 | Unknown | Unknown | Unknown | No | No | ||||||||||||||||||||||||||||||||||||||||||||||
| 2N4036 Transistor BJT |
|
Semelab | GP BJT | Unknown | Unknown | Unknown | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||
2N2369A
Trans GP BJT NPN 15V 0.2A 3-Pin TO-18
|
|
Semelab | GP BJT | NPN | Bipolar Small Signal | Single | 15 | 40 | 1 | 4.5 | 0.85@1mA@10mA|0.9@3mA@30mA|1.2@10mA@100mA | 0.2 | 486 | 360 | 2 to 30|30 to 50 | 40@10mA@0.35V|40@10mA@1V|30@30mA@0.4V|20@100mA@1V | 208.3 | 4(Max) | 0.2@1mA@10mA|0.25@3mA@30mA|0.45@10mA@100mA | 3 | TO-18 | TO | No | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||
2N2907ACSM-JQR-B
Trans GP BJT PNP 60V 0.6A 3-Pin CLLCC-1
|
|
Semelab | GP BJT | PNP | Bipolar Small Signal | Si | Single | 60 | 60 | 1 | 5 | 1.3@15mA@150mA|2.6@50mA@500mA | 0.6 | 500 | 50 to 120 | 75@0.1mA@10V|100@1mA@10V|100@10mA@10V|100@150mA@10V|50@500mA@10V | 0.4@15mA@150mA|1.6@50mA@500mA | 3 | CLLCC-1 | LCC | No | Unknown | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||
| BDS20-QR-EB Trans GP BJT NPN 80V 5A 3-Pin(3+Tab) TO-257AB |
|
Semelab | GP BJT | NPN | Bipolar Power | Si | Single | 80 | 80 | 1 | 5 | 5 | 35000 | 500 to 3600 | 1000@0.5A@3V|1000@3A@3V | 2@12mA@3A|4@20mA@5A | 3 | TO-257AB | No | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||
| BDX63A-QR-B NPN EPITAXIAL BASE DARLINGTON POWER TRANSISTOR |
|
Semelab | Darlington BJT | 3 | TO-3 | TO | No | No | No | No | No | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||
| D1212UK Trans RF MOSFET 40V 30A 5-Pin Case DH |
|
Semelab | HF-MOSFETs | Si | Dual Common Source | 2 | 40 | ±20 | 7 | 290000 | 30 | 180(Max)@0V | 10(Min) | 1 | 500 | 5 | Case DH | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||
| 2N3584 Trans GP BJT NPN 250V 2A 35000mW 3-Pin(2+Tab) TO-66 |
|
Semelab | GP BJT | NPN | Bipolar Power | Single | 250 | 1 | 2 | 35000 | 2 to 30 | 25@1A@10V | 3 | TO-66 | TO | No | No | No | No | EAR99 | No | No |