TT Electronics / Semelab Diodes, Transistors and Thyristors
| Teile-Nr. | Preis | Bestand | Hersteller | Kategorie | Type | Category | Material | Channel Type | Configuration | Channel Mode | Peak Reverse Repetitive Voltage - (V) | Maximum Collector-Emitter Voltage - (V) | Maximum Continuous Forward Current - (A) | Maximum Collector-Base Voltage - (V) | Number of Elements per Chip | Maximum Drain-Gate Voltage - (V) | Maximum Continuous DC Collector Current - (A) | Maximum Base-Emitter Voltage - (V) | Peak Non-Repetitive Forward Surge Current - (A) | Maximum Forward Voltage - (V) | Maximum Drain-Source Voltage - (V) | Maximum Base-Emitter Saturation Voltage - (V) | Peak Reverse Current - (uA) | Maximum Gate-Source Voltage - (V) | Maximum DC Collector Current - (A) | Operational Bias Conditions | Maximum Junction Ambient Thermal Resistance | Maximum Gate Threshold Voltage - (V) | Maximum Power Dissipation - (mW) | Maximum Continuous Drain Current - (A) | Peak Reverse Recovery Time - (ns) | Minimum DC Current Gain Range | Minimum DC Current Gain | Maximum Drain-Source Resistance - (mOhm) | Typical Gate Charge @ Vgs - (nC) | Maximum Junction Case Thermal Resistance | Typical Gate Charge @ 10V - (nC) | Typical Output Capacitance - (pF) | Typical Input Capacitance @ Vds - (pF) | Typical Power Gain - (dB) | Minimum Frequency - (MHz) | Maximum Output Power - (W) | Maximum Collector-Emitter Saturation Voltage - (V) | Maximum Frequency - (MHz) | Maximum Transition Frequency - (MHz) | Maximum Noise Figure - (dB) | Process Technology | Rad Hard | Pin Count | Supplier Package | Standard Package Name | CECC Qualified | ESD Protection | ESCC Qualified | Military | AEC Qualified | Auto motive | P PAP | ECCN Code | SVHC | SVHC Exceeds Threshold |
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2N4033
Trans GP BJT PNP 80V 1A 800mW 3-Pin TO-39
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Semelab | GP BJT | PNP | Bipolar Power | Si | Single | 80 | 80 | 1 | 5 | 0.9@15mA@150mA | 1 | 800 | 2 to 30|30 to 50|50 to 120 | 75@100uA@5V|100@100mA@5V|70@500mA@5V|25@1A@5V | 0.15@15mA@150mA|0.5@50mA@500mA | 3 | TO-39 | TO | No | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||
| D1002UK Trans RF MOSFET N-CH 70V 10A 4-Pin Case DA |
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Semelab | HF-MOSFETs | Si | N | Single Dual Source | Enhancement | 1 | 70 | ±20 | 87000 | 10 | 120(Max)@28V | 16(Min) | 1 | 40 | 175 | 4 | Case DA | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||
| D1029UK Trans RF MOSFET N-CH 70V 35A 5-Pin Case DR |
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Semelab | HF-MOSFETs | Si | N | Dual Common Source | Enhancement | 2 | 70 | ±20 | 438000 | 35 | 420(Max)@28V | 13(Min) | 1 | 350 | 200 | 5 | Case DR | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||
| D1013UK Trans RF MOSFET N-CH 70V 5A 3-Pin Case DP |
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Semelab | HF-MOSFETs | Si | N | Single | Enhancement | 1 | 70 | ±20 | 50000 | 5 | 1000(Typ)@20V | 60(Max)@28V | 13(Min) | 1 | 20 | 1000 | 3 | Case DP | No | Unknown | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||
| D2201UK Trans RF MOSFET N-CH 40V 2A 3-Pin Case DP |
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Semelab | HF-MOSFETs | Si | N | Single | Enhancement | 1 | 40 | ±20 | 17500 | 2 | 12(Max)@0V | 10(Min) | 1 | 2.5 | 1000 | 3 | Case DP | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||
| D1020UK.08 Trans RF MOSFET N-CH 70V 25A 5-Pin Case DR |
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Semelab | HF-MOSFETs | Si | N | Dual Common Source | Enhancement | 2 | 70 | ±20 | 389000 | 25 | 300(Max)@28V | 10(Min) | 1 | 150 | 500 | 5 | Case DR | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||
| 2N5038 Trans GP BJT NPN 90V 20A 140000mW 3-Pin(2+Tab) TO-3 |
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Semelab | GP BJT | NPN | Bipolar Power | Single | 90 | 150 | 1 | 7 | 20 | 140000 | 2 to 30 | 20@12A@5V | 3 | TO-3 | TO | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||
| D2205UK Trans RF MOSFET 40V 6A 3-Pin Case DP |
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Semelab | HF-MOSFETs | Si | Single | 1 | 40 | ±20 | 7 | 35000 | 6 | 36(Max)@0V | 10(Min) | 1 | 7.5 | 1000 | 3 | Case DP | No | No | No | No | No | 5A991g. | No | No | |||||||||||||||||||||||||||||||||||
2N3019CSM
Trans GP BJT NPN 80V 1A 500mW 3-Pin CLLCC-1
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Semelab | GP BJT | NPN | Bipolar Small Signal | Si | Single | 80 | 140 | 1 | 7 | 1.1@15mA@150mA | 1 | 350 | 500 | 2 to 30|30 to 50|50 to 120 | 50@0.1mA@10V|90@10mA@10V|100@150mA@10V|50@500mA@10V|15@1A@10V | 90 | 12(Max) | 0.2@15mA@150mA|0.5@50mA@500mA | 4 | 3 | CLLCC-1 | LCC | No | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||
2N2222ADCSM
Trans GP BJT NPN 50V 0.8A 6-Pin CLLCC-2
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Semelab | GP BJT | NPN | Bipolar Power | Single | 50 | 75 | 1 | 6 | 1.2@15mA@150mA|2@50mA@500mA | 0.8 | 325 | 500 | 30 to 50|50 to 120 | 50@0.1mA@10V|75@1mA@10V|100@10mA@10V|100@150mA@10V|30@500mA@10V | 0.3@15mA@150mA|1@50mA@500mA | 250 | 6 | CLLCC-2 | LCC | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||
2N4209C1A
Trans GP BJT PNP 15V 0.05A 360mW 3-Pin CLLCC
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Semelab | GP BJT | PNP | Bipolar Small Signal | Si | Single | 15 | 15 | 1 | 4.5 | 0.8@0.1mA@1mA|0.95@1mA@10mA|1.5@5mA@50mA | 0.05 | 250 | 360 | 30 to 50|50 to 120 | 35@1mA@0.5V|50@10mA@0.3V|55@10mA@1V|40@50mA@1V | 3(Max) | 0.15@0.1mA@1mA|0.18@1mA@10mA|0.6@5mA@50mA | 3 | CLLCC | LCC | No | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||
| D2021UK Trans RF MOSFET 65V 3A 8-Pin SO |
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Semelab | HF-MOSFETs | Si | Single Dual Drain Dual Gate Quad Source | 1 | 65 | ±20 | 7 | 17500 | 3 | 36(Max)@0V | 13(Min) | 0 | 7.5 | 1000 | 8 | SO | SO | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||
| D1008UK Trans RF MOSFET N-CH 70V 10A 5-Pin Case DK |
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Semelab | HF-MOSFETs | Si | N | Dual Common Source | Enhancement | 2 | 70 | ±20 | 175000 | 10 | 120(Max)@28V | 13(Min) | 1 | 80 | 500 | 5 | Case DK | No | Unknown | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||
| D1028UK Trans RF MOSFET N-CH 70V 30A 5-Pin Case DR |
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Semelab | HF-MOSFETs | Si | N | Dual Common Source | Enhancement | 2 | 70 | ±20 | 438000 | 30 | 360(Max)@28V | 13(Min) | 1 | 300 | 200 | DMOS | 5 | Case DR | No | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||
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2N2369ACSM
Trans GP BJT NPN 15V 0.2A 360mW 3-Pin CLLCC-1
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Semelab | GP BJT | NPN | Bipolar Small Signal | Si | Single | 15 | 40 | 1 | 4.5 | 0.85@1mA@10mA|0.9@3mA@30mA|1.2@10mA@100mA | 0.2 | 486 | 360 | 2 to 30|30 to 50 | 30@30mA@0.4V|20@100mA@1V|40@10mA@0.35V|40@10mA@1V | 0.2@1mA@10mA|0.25@3mA@30mA|0.45@10mA@100mA | 3 | CLLCC-1 | LCC | No | Unknown | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||
2N3700
Trans GP BJT NPN 80V 1A 500mW 3-Pin TO-18
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Semelab | GP BJT | NPN | Bipolar Power | Si | Single | 80 | 140 | 1 | 7 | 1.1@15mA@150mA | 1 | 500 | 50 to 120 | 50@0.1mA@10V|90@10mA@10V|100@150mA@10V|50@500mA@10V|15@1A@10V | 0.5@50mA@500mA|0.2@15mA@150mA | 3 | TO-18 | TO | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||
| D1010UK Trans RF MOSFET N-CH 70V 20A 5-Pin Case DR |
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Semelab | HF-MOSFETs | Si | N | Dual Common Source | Enhancement | 2 | 70 | ±20 | 389000 | 20 | 240(Max)@0V | 10(Min) | 1 | 125 | 500 | 5 | Case DR | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||
| D1025UK Trans RF MOSFET 70V 25A 5-Pin Case DT |
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Semelab | HF-MOSFETs | Si | Single Common Triple Source | 1 | 70 | ±20 | 7 | 175000 | 25 | 300(Max)@28V | 16(Min) | 1 | 175 | 5 | Case DT | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||
| D1024UK Trans RF MOSFET N-CH 70V 5A 8-Pin Case DD |
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Semelab | HF-MOSFETs | Si | N | Dual Common Source | Enhancement | 2 | 70 | ±20 | 7 | 100000 | 5 | 60(Max)@28V | 13(Min) | 1 | 500 | 8 | Case DD | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||
| D2229UK Trans RF MOSFET 40V 2A 8-Pin Case F-0127 |
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Semelab | HF-MOSFETs | Si | Dual Quad Source | 2 | 40 | ±20 | 17500 | 2 | 12(Max)@0V | 10(Min) | 1 | 2.5 | 2000 | 8 | Case F-0127 | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||
| D2241UK RF MOSFET, RF VDMOS Power |
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Semelab | HF-MOSFETs | No | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| D5002UK Trans RF MOSFET N-CH 125V 6A 4-Pin Case DA |
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Semelab | HF-MOSFETs | Si | N | Single Dual Source | Enhancement | 1 | 125 | ±20 | 87000 | 6 | 120(Max)@50V | 16(Min) | 1 | 40 | 175 | 4 | Case DA | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||
| D5006UK Trans RF MOSFET 125V 21A 6-Pin Case DV |
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Semelab | HF-MOSFETs | Si | Single Quad Source | 1 | 125 | ±20 | 7 | 220000 | 21 | 420(Max)@50V | 13(Min) | 1 | 200 | 6 | Case DV | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||
| D2212UK Trans RF MOSFET N-CH 40V 8A 3-Pin Case DP |
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Semelab | HF-MOSFETs | Si | N | Single | Enhancement | 1 | 40 | ±20 | 7 | 42000 | 8 | 48(Max)@0V | 10(Min) | 0 | 1000 | 3 | Case DP | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||
| D5001UK Trans RF MOSFET N-CH 125V 3A 4-Pin Case DA |
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Semelab | HF-MOSFETs | Si | N | Single Dual Drain | Enhancement | 1 | 125 | ±20 | 50000 | 3 | 60(Max)@50V | 16(Min) | 1 | 20 | 175 | 4 | Case DA | No | No | No | No | No | EAR99 | No | No |