TT Electronics / Semelab Diodes, Transistors and Thyristors
| Teile-Nr. | Preis | Bestand | Hersteller | Kategorie | Type | Category | Material | Channel Type | Configuration | Channel Mode | Peak Reverse Repetitive Voltage - (V) | Maximum Collector-Emitter Voltage - (V) | Maximum Continuous Forward Current - (A) | Maximum Collector-Base Voltage - (V) | Number of Elements per Chip | Maximum Drain-Gate Voltage - (V) | Maximum Continuous DC Collector Current - (A) | Maximum Base-Emitter Voltage - (V) | Peak Non-Repetitive Forward Surge Current - (A) | Maximum Forward Voltage - (V) | Maximum Drain-Source Voltage - (V) | Maximum Base-Emitter Saturation Voltage - (V) | Peak Reverse Current - (uA) | Maximum Gate-Source Voltage - (V) | Maximum DC Collector Current - (A) | Operational Bias Conditions | Maximum Junction Ambient Thermal Resistance | Maximum Gate Threshold Voltage - (V) | Maximum Power Dissipation - (mW) | Maximum Continuous Drain Current - (A) | Peak Reverse Recovery Time - (ns) | Minimum DC Current Gain Range | Minimum DC Current Gain | Maximum Drain-Source Resistance - (mOhm) | Typical Gate Charge @ Vgs - (nC) | Maximum Junction Case Thermal Resistance | Typical Gate Charge @ 10V - (nC) | Typical Output Capacitance - (pF) | Typical Input Capacitance @ Vds - (pF) | Typical Power Gain - (dB) | Minimum Frequency - (MHz) | Maximum Output Power - (W) | Maximum Collector-Emitter Saturation Voltage - (V) | Maximum Frequency - (MHz) | Maximum Transition Frequency - (MHz) | Maximum Noise Figure - (dB) | Process Technology | Rad Hard | Pin Count | Supplier Package | Standard Package Name | CECC Qualified | ESD Protection | ESCC Qualified | Military | AEC Qualified | Auto motive | P PAP | ECCN Code | SVHC | SVHC Exceeds Threshold |
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| 2N6678M3A-JQRS NPN Silicon Transistor |
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Semelab | GP BJT | No | No | No | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||
2N6845
Trans MOSFET P-CH 100V 4A 3-Pin TO-39
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Semelab | MOSFETs | Power MOSFET | P | Single | Enhancement | 1 | 100 | ±20 | 4 | 20000 | 4 | 690@10V | 16.3(Max)@10V | 16.3(Max) | 380@25V | 3 | TO-39 | TO | No | Unknown | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||
| IRFM460 Power MOSFET Thru Hole |
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Semelab | MOSFETs | 3 | TO-254AA | TO | No | No | No | No | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||
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2N2905A-JQR-B
Trans GP BJT PNP 60V 0.6A 800mW 3-Pin TO-39
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Semelab | GP BJT | PNP | Bipolar Power | Si | Single | 60 | 60 | 1 | 5 | 1.3@15mA@150mA|2.6@50mA@500mA | 0.6 | 800 | 50 to 120 | 75@0.1mA@10V|100@1mA@10V|100@10mA@10V|100@150mA@10V|50@500mA@10V | 0.4@15mA@150mA|1.6@50mA@500mA | 3 | TO-39 | TO | No | No | No | No | No | No | No | ||||||||||||||||||||||||||||||||||
| DMD5028 Trans RF MOSFET N-CH 125V 5-Pin Case D1 |
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Semelab | HF-MOSFETs | Si | N | Dual Common Source | Enhancement | 2 | 125 | ±20 | 7 | 875000 | 360(Max)@50V | 20(Min) | 1 | 175 | 5 | Case D1 | No | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||
| BYV34-500M Diode Switching 500V 20A 3-Pin(3+Tab) TO-257AB |
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Semelab | Gleichrichter | Switching Diode | Dual Common Cathode | 500 | 20 | 100 | 1.7 | 50 | 50 | 3 | TO-257AB | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||
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BUX54
Trans GP BJT NPN 400V 2A 10000mW 3-Pin TO-39
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Semelab | GP BJT | NPN | Bipolar Power | Si | Single | 400 | 450 | 1 | 7 | 1.5@0.15A@1.2A | 2 | 10000 | 17.5 | 0.5@0.06A@0.6A|1.3@0.15A@1.2A | 3 | TO-39 | TO | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||
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2N6661-JQR-B
Trans MOSFET N-CH 90V 0.9A 3-Pin TO-39
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Semelab | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 90 | ±20 | 725 | 0.9 | 4000@10V | 50(Max)@25V | 3 | TO-39 | TO | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||
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BSS44
Trans GP BJT PNP 60V 5A 5000mW 3-Pin TO-39
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Semelab | GP BJT | PNP | Bipolar Power | Single | 60 | 1 | 5 | 5000 | 30 to 50 | 40@2A@2V | 3 | TO-39 | TO | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||
| BDX65B BIPOLAR NPN DARLINGTON DEVICE |
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Semelab | Darlington BJT | 3 | TO-3 | TO | No | No | No | No | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||
2N7002CSM-JQR-B
Trans MOSFET N-CH 60V 0.115A 3-Pin LCC-1
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Semelab | MOSFETs | N | Enhancement | 3 | CLLCC-1 | LCC | No | No | No | No | No | No | No | ||||||||||||||||||||||||||||||||||||||||||||||
| IRFY430-QR-EB Trans MOSFET N-CH 500V 4.5A 3-Pin(3+Tab) TO-257AB |
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Semelab | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 500 | ±20 | 4 | 75000 | 4.5 | 1840@10V | 29.5(Max)@10V | 29.5(Max) | 610@25V | 3 | TO-257AB | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||
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2N3720
Trans GP BJT PNP 60V 3A 1000mW 3-Pin TO-39
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Semelab | GP BJT | PNP | Bipolar Power | Single | 60 | 60 | 1 | 4 | 1.5@100mA@1A|2.3@300mA@3A | 3 | 1000 | 2 to 30 | 20@500mA@1.5V|25@1A@1.5V | 0.75@100mA@1A|1.5@300mA@3A | 3 | TO-39 | TO | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||
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2N3440-JQR-B
Trans GP BJT NPN 250V 1A 5000mW 3-Pin TO-39
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Semelab | GP BJT | NPN | Bipolar Power | Si | Single | 250 | 300 | 1 | 7 | 1.3@4mA@50mA | 1 | 175 | 5000 | 30 to 50 | 40@20mA@10V | 35 | 10(Max) | 0.5@4mA@50mA | 3 | TO-39 | TO | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||
BUP51
Trans GP BJT NPN 175V 80A 3-Pin(2+Tab) TO-3
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Semelab | GP BJT | NPN | Bipolar Power | Si | Single | 175 | 1 | 10 | 1.1@2A@20A|1.2@4A@40A|1.5@14A@70A | 80 | 300000 | 2 to 30 | 20@20A@4V|20@40A@4V|10@70A@4V | 0.5@2A@20A|0.6@4A@40A|1@14A@70A | 3 | TO-3 | TO | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||
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BUY90
Trans GP BJT PNP 60V 3A 20000mW 3-Pin TO-39
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Semelab | GP BJT | PNP | Bipolar Power | Single | 60 | 1 | 3 | 20000 | 30 to 50 | 40@1A@5V | 3 | TO-39 | TO | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||
| D1222UK Trans RF MOSFET 40V 30A 5-Pin Case DK |
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Semelab | HF-MOSFETs | Dual Common Source | 2 | 40 | ±20 | 7 | 290000 | 30 | 180(Max)@0V | 10(Min) | 1 | 500 | 5 | Case DK | No | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||
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2N2369ACSM-QR-EB
Trans GP BJT NPN 15V 0.2A 360mW 3-Pin CLLCC-1
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Semelab | GP BJT | NPN | Bipolar Small Signal | Si | Single | 15 | 40 | 1 | 4.5 | 0.85@1mA@10mA|0.9@3mA@30mA|1.2@10mA@100mA | 0.2 | 360 | 2 to 30|30 to 50 | 40@10mA@0.35V|40@10mA@1V|30@30mA@0.4V|20@100mA@1V | 0.2@1mA@10mA|0.25@3mA@30mA|0.45@10mA@100mA | 3 | CLLCC-1 | LCC | No | Unknown | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||
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BUX50-QR
Bipolar NPN Device in A Hermetically Sealed TO-39 Metal Package
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Semelab | GP BJT | 3 | TO-39 | TO | No | No | No | No | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||
| IRF230 Trans MOSFET N-CH 200V 9A 3-Pin(2+Tab) TO-3 |
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Semelab | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 200 | ±20 | 75000 | 9 | 400@10V | 30@10V | 30 | 600@25V | 3 | TO-3 | TO | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||
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2N2243A
Trans GP BJT NPN 80V 1A 800mW 3-Pin TO-39
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Semelab | GP BJT | NPN | Bipolar Power | Single | 80 | 120 | 1 | 7 | 1.3@15mA@150mA | 1 | 800 | 2 to 30|30 to 50 | 15@0.1mA@10V|30@10mA@10V|40@150mA@10V|15@500mA@10V|30@150mA@1V | 0.25@15mA@150mA | 3 | TO-39 | TO | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||
| BDS16 Trans GP BJT NPN 120V 8A 43750mW 3-Pin(3+Tab) TO-257AB |
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Semelab | GP BJT | NPN | Bipolar Power | Si | Single | 120 | 120 | 1 | 5 | 8 | 43750 | 2 to 30|30 to 50 | 40@0.5A@2V|15@4A@2V | 0.4@0.05A@0.5A|1.5@0.4A@4A | 3 | TO-257AB | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||
| D2218UK Trans RF MOSFET 40V 16A 3-Pin Case DP |
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Semelab | HF-MOSFETs | Si | Single | 1 | 40 | ±20 | 7 | 70000 | 16 | 96(Max)@0V | 10(Min) | 0 | 1000 | 3 | Case DP | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||
| D5029UK Trans RF MOSFET N-CH 125V 21A 5-Pin Case DR |
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Semelab | HF-MOSFETs | Si | N | Dual Common Source | Enhancement | 1 | 125 | ±20 | 438000 | 21 | 420(Max)@50V | 13(Min) | 1 | 350 | 200 | 5 | Case DR | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||
| D1006UK Trans RF MOSFET N-CH 70V 30A 6-Pin Case DV |
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Semelab | HF-MOSFETs | Si | N | Single Quad Source | Enhancement | 1 | 70 | ±20 | 7 | 220000 | 30 | 360(Max)@0V | 14(Min) | 1 | 200 | 6 | Case DV | No | No | No | No | No | EAR99 | No | No |