TT Electronics / Semelab Dioden, Transistoren und Thyristoren
| Teile-Nr. | Preis | Bestand | Hersteller | Kategorie | Type | Category | Material | Channel Type | Configuration | Channel Mode | Peak Reverse Repetitive Voltage - (V) | Maximum Collector-Emitter Voltage - (V) | Maximum Continuous Forward Current - (A) | Maximum Collector-Base Voltage - (V) | Number of Elements per Chip | Maximum Drain-Gate Voltage - (V) | Maximum Continuous DC Collector Current - (A) | Maximum Base-Emitter Voltage - (V) | Peak Non-Repetitive Forward Surge Current - (A) | Maximum Forward Voltage - (V) | Maximum Drain-Source Voltage - (V) | Maximum Base-Emitter Saturation Voltage - (V) | Peak Reverse Current - (uA) | Maximum Gate-Source Voltage - (V) | Maximum DC Collector Current - (A) | Operational Bias Conditions | Maximum Junction Ambient Thermal Resistance | Maximum Gate Threshold Voltage - (V) | Maximum Power Dissipation - (mW) | Maximum Continuous Drain Current - (A) | Peak Reverse Recovery Time - (ns) | Minimum DC Current Gain Range | Minimum DC Current Gain | Maximum Drain-Source Resistance - (mOhm) | Typical Gate Charge @ Vgs - (nC) | Maximum Junction Case Thermal Resistance | Typical Gate Charge @ 10V - (nC) | Typical Output Capacitance - (pF) | Typical Input Capacitance @ Vds - (pF) | Typical Power Gain - (dB) | Minimum Frequency - (MHz) | Maximum Output Power - (W) | Maximum Collector-Emitter Saturation Voltage - (V) | Maximum Frequency - (MHz) | Maximum Transition Frequency - (MHz) | Maximum Noise Figure - (dB) | Process Technology | Rad Hard | Pin Count | Supplier Package | Standard Package Name | CECC Qualified | ESD Protection | ESCC Qualified | Military | AEC Qualified | Auto motive | P PAP | ECCN Code | SVHC | SVHC Exceeds Threshold |
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2N3053
Trans GP BJT NPN 40V 0.7A 1000mW 3-Pin TO-39
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Semelab | GP BJT | NPN | Bipolar Power | Si | Single | 40 | 60 | 1 | 5 | 1.7@0.015A@0.15A | 0.7 | 1000 | 30 to 50 | 50@150mA@10V | 1.4@0.015A@0.15A | 3 | TO-39 | TO | No | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||
2N3634CSM
Trans GP BJT PNP 140V 1A 1000mW 3-Pin CLLCC-1
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Semelab | GP BJT | PNP | Bipolar Power | Si | Single | 140 | 140 | 1 | 5 | 0.8@1mA@10mA|0.9@5mA@50mA | 1 | 1000 | 2 to 30|30 to 50|50 to 120 | 40@0.1mA@10V|45@1mA@10V|50@10mA@10V|50@50mA@10V|25@150mA@10V | 10(Max) | 0.3@1mA@10mA|0.5@5mA@50mA | 3 | 3 | CLLCC-1 | LCC | No | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||
| BDX65C BIPOLAR NPN DARLINGTON DEVICE |
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Semelab | Darlington BJT | 3 | TO-3 | TO | No | No | No | No | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||
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2N3114CSM
Trans GP BJT NPN 150V 0.15A 3-Pin CLLCC-1
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Semelab | GP BJT | NPN | Bipolar Small Signal | Si | Single | 150 | 150 | 1 | 5 | 0.9@5mA@50mA | 0.15 | 350 | 2 to 30|30 to 50 | 15@0.1mA@10V|30@30mA@10V | 1@5mA@50mA | 3 | CLLCC-1 | LCC | No | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||
| BDS17 Trans GP BJT NPN 150V 8A 43750mW 3-Pin(3+Tab) TO-257AB |
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Semelab | GP BJT | NPN | Bipolar Power | Si | Single | 150 | 150 | 1 | 5 | 8 | 43750 | 2 to 30|30 to 50 | 40@0.5A@2V|15@4A@2V | 0.4@0.05A@0.5A|1.5@0.4A@4A | 3 | TO-257AB | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||
| D1213UK Trans RF MOSFET 40V 20A 8-Pin DBC1 |
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Semelab | HF-MOSFETs | Si | Dual Quad Source | 2 | 40 | ±20 | 58000 | 20 | 120(Max)@0V | 10(Min) | 1 | 6 | 1000 | 8 | DBC1 | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||
| 2N7085-QR-B Trans MOSFET N-CH 100V 20A 3-Pin(3+Tab) TO-257AB |
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Semelab | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 100 | ±20 | 4 | 60000 | 20 | 75@10V | 35@10V | 35 | 1400@25V | 3 | TO-257AB | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||
BUT90
Trans GP BJT NPN 125V 50A 250000mW 3-Pin(2+Tab) TO-3
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Semelab | GP BJT | NPN | Bipolar Power | Single | 125 | 1 | 50 | 250000 | 2 to 30 | 10 | 3 | TO-3 | TO | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||
| BDX63A Trans Darlington NPN 80V 8A 90000mW 3-Pin(2+Tab) TO-3 |
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Semelab | Darlington BJT | NPN | Single | 80 | 100 | 1 | 8 | 5 | 90000 | 1000@3A@3V | 2@12mA@3A | 3 | TO-3 | TO | No | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||
| D1031UK Trans RF MOSFET 70V 5A 8-Pin Case F-0127 |
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Semelab | HF-MOSFETs | Si | Dual Quad Source | 2 | 70 | ±20 | 7 | 30000 | 5 | 60(Max)@0V | 13(Min) | 1 | 10 | 1000 | 8 | Case F-0127 | No | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||
| IRFY340-QR-B N-CHANNEL POWER MOSFET FOR HI-REL APPLICATIONS |
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Semelab | MOSFETs | 3 | TO-257AB | No | No | No | No | No | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||
| D1208UK Trans RF MOSFET N-CH 40V 20A 5-Pin Case DK |
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Semelab | HF-MOSFETs | Si | N | Dual Common Source | Enhancement | 2 | 40 | ±20 | 175000 | 20 | 120(Max)@0V | 10(Min) | 1 | 40 | 500 | 5 | Case DK | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||
| D2031UK Trans RF MOSFET 65V 3A 8-Pin Case F-0127 |
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Semelab | HF-MOSFETs | Si | Single Dual Drain Dual Gate Quad Source | 1 | 65 | ±20 | 7 | 17500 | 3 | 36(Max)@0V | 13(Min) | 1 | 1000 | 8 | Case F-0127 | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||
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2N2905A
Trans GP BJT PNP 60V 0.6A 800mW 3-Pin TO-39
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Semelab | GP BJT | PNP | Bipolar Power | Si | Single | 60 | 60 | 1 | 5 | 1.3@15mA@150mA|2.6@50mA@500mA | 0.6 | 800 | 50 to 120 | 75@0.1mA@10V|100@1mA@10V|100@10mA@10V|100@150mA@10V|50@500mA@10V | 0.4@15mA@150mA|1.6@50mA@500mA | 3 | TO-39 | TO | No | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||
| BUY69A Trans GP BJT NPN 400V 10A 100000mW 3-Pin(2+Tab) TO-3 |
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Semelab | GP BJT | NPN | Bipolar Power | Single | 400 | 1 | 10 | 100000 | 2 to 30 | 15@2.5A@10V | 3 | TO-3 | TO | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||
| IRFE024 Trans MOSFET N-CH 60V 6.7A 16-Pin LCC-4 |
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Semelab | MOSFETs | Power MOSFET | N | Single Hex Drain Dual Gate Octal Source | Enhancement | 1 | 60 | ±20 | 4 | 14000 | 6.7 | 170@10V | 26(Max)@10V | 26(Max) | 640@25V | 16 | LCC-4 | LCC | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||
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BUP53
Trans GP BJT NPN 250V 60A 3-Pin(2+Tab) TO-3
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Semelab | GP BJT | NPN | Bipolar Power | Si | Single | 250 | 1 | 10 | 1.1@2A@20A|1.4@5A@50A | 60 | 300000 | 2 to 30 | 12@20A@4V|5@50A@4V | 0.6@2A@20A|0.8@8A@50A | 3 | TO-3 | TO | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||
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BUP49
Trans GP BJT NPN 80V 90A 3-Pin(2+Tab) TO-3
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Semelab | GP BJT | NPN | Bipolar Power | Single | 80 | 1 | 90 | 300000 | 2 to 30 | 15@80A@4V | 3 | TO-3 | TO | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||
| BUX43 Trans GP BJT NPN 325V 10A 120000mW 3-Pin(2+Tab) TO-3 |
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Semelab | GP BJT | NPN | Bipolar Power | Single | 325 | 1 | 10 | 120000 | 2 to 30 | 15@3A@4V | 3 | TO-3 | TO | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||
| 2N4902X Trans GP BJT PNP 60V 5A 3-Pin(2+Tab) TO-3 |
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Semelab | GP BJT | PNP | Bipolar Power | Single | 60 | 1 | 5 | 87000 | 2 to 30 | 20@1A@2V | 4 | 3 | TO-3 | TO | No | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||
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BUV20
Trans GP BJT NPN 125V 50A 250000mW 3-Pin(2+Tab) TO-3
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Semelab | GP BJT | NPN | Bipolar Power | Single | 125 | 160 | 1 | 7 | 2@5A@50A | 50 | 250000 | 2 to 30 | 10@50A@4V|20@25A@2V | 1.2@5A@50A | 3 | TO-3 | TO | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||
IRFJ240
Trans MOSFET N-CH 200V 13A 3-Pin(2+Tab) TO-66
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Semelab | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 200 | ±20 | 4 | 70000 | 13 | 180@10V | 43@10V | 43 | 1275@25V | 3 | TO-66 | TO | No | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||
| 2N2896X Trans GP BJT NPN 90V 1A 500mW 3-Pin TO-18 |
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Semelab | GP BJT | NPN | Bipolar Small Signal | Si | Single | 90 | 140 | 1 | 7 | 1.2@15mA@150mA | 1 | 350 | 500 | 30 to 50|50 to 120 | 35@1mA@10V|60@150mA@10V | 97 | 15(Max) | 0.6@15mA@150mA | 3 | TO-18 | TO | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||
| 2N3741R Trans GP BJT PNP 80V 4A 25000mW 3-Pin(2+Tab) TO-66 |
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Semelab | GP BJT | PNP | Bipolar Power | Si | Single | 80 | 80 | 1 | 7 | 4 | 25000 | 2 to 30|30 to 50 | 40@100mA@1V|30@250mA@1V|20@500mA@1V|10@1A@1V | 100(Max) | 0.6@125mA@1A | 3 | TO-66 | TO | No | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||
| BDY58S Trans GP BJT NPN 125V 25A 175000mW 3-Pin(2+Tab) TO-3 |
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Semelab | GP BJT | NPN | Bipolar Power | Single | 125 | 1 | 25 | 175000 | 2 to 30 | 20@10A@4V | 3 | TO-3 | TO | No | No | No | No | EAR99 | No | No |