TT Electronics / Semelab Dioden, Transistoren und Thyristoren
| Teile-Nr. | Preis | Bestand | Hersteller | Kategorie | Type | Category | Material | Channel Type | Configuration | Channel Mode | Peak Reverse Repetitive Voltage - (V) | Maximum Collector-Emitter Voltage - (V) | Number of Elements per Chip | Maximum Continuous Forward Current - (mA) | Maximum Collector-Base Voltage - (V) | Maximum Drain-Gate Voltage - (V) | Maximum Base-Emitter Voltage - (V) | Peak Non-Repetitive Forward Surge Current - (A) | Maximum Forward Voltage - (V) | Maximum Drain-Source Voltage - (V) | Maximum Base-Emitter Saturation Voltage - (V) | Peak Reverse Current - (uA) | Maximum Gate-Source Voltage - (V) | Maximum DC Collector Current - (A) | Maximum Continuous DC Collector Current - (A) | Operational Bias Conditions | Maximum Gate Threshold Voltage - (V) | Maximum Continuous Drain Current - (A) | Peak Reverse Recovery Time - (ns) | Minimum DC Current Gain Range | Minimum DC Current Gain | Maximum Drain-Source Resistance - (mOhm) | Typical Gate Charge @ Vgs - (nC) | Maximum Junction Ambient Thermal Resistance | Maximum Junction Case Thermal Resistance | Typical Input Capacitance - (pF) | Typical Gate Charge @ 10V - (nC) | Maximum Power Dissipation - (mW) | Maximum Collector-Emitter Saturation Voltage - (V) | Typical Output Capacitance - (pF) | Typical Input Capacitance @ Vds - (pF) | Minimum Frequency - (MHz) | Maximum Output Power - (W) | Typical Power Gain - (dB) | Maximum Transition Frequency - (MHz) | Maximum Noise Figure - (dB) | Maximum Turn-On Time - (ns) | Process Technology | Rad Hard | Pin Count | Supplier Package | Standard Package Name | CECC Qualified | ESD Protection | ESCC Qualified | Military | AEC Qualified | Auto motive | P PAP | ECCN Code | SVHC | SVHC Exceeds Threshold |
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2N2905A
Trans GP BJT PNP 60V 0.6A 800mW 3-Pin TO-39
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Semelab | GP BJT | PNP | Bipolar Power | Si | Single | 60 | 1 | 60 | 5 | 1.3@15mA@150mA|2.6@50mA@500mA | 0.6 | 50 to 120 | 75@0.1mA@10V|100@1mA@10V|100@10mA@10V|100@150mA@10V|50@500mA@10V | 800 | 0.4@15mA@150mA|1.6@50mA@500mA | 45 | 3 | TO-39 | TO | No | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||
| D2211UK Trans RF MOSFET 40V 16A 8-Pin DBC1 |
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Semelab | HF-MOSFETs | Si | Single Dual Drain Dual Gate Quad Source | 1 | 40 | ±20 | 7 | 16 | 70000 | 96(Max)@0V | 1 | 7(Min) | 8 | DBC1 | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||
| 2N4906 Trans GP BJT PNP 80V 5A 87000mW 3-Pin(2+Tab) TO-3 |
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Semelab | GP BJT | PNP | Bipolar Power | Single | 80 | 1 | 5 | 2 to 30 | 25@2.5A@2V | 87000 | 3 | TO-3 | TO | No | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||
| BDS17-QR-B Trans GP BJT NPN 150V 8A 43750mW 3-Pin(3+Tab) TO-257AB |
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Semelab | GP BJT | NPN | Bipolar Power | Si | Single | 150 | 1 | 150 | 5 | 8 | 2 to 30|30 to 50 | 40@0.5A@2V|15@4A@2V | 43750 | 0.4@0.05A@0.5A|1.5@0.4A@4A | 500 | 3 | TO-257AB | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||
| IRFE024 Trans MOSFET N-CH 60V 6.7A 16-Pin LCC-4 |
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Semelab | MOSFETs | Power MOSFET | N | Single Hex Drain Dual Gate Octal Source | Enhancement | 1 | 60 | ±20 | 4 | 6.7 | 170@10V | 26(Max)@10V | 26(Max) | 14000 | 640@25V | 16 | LCC-4 | LCC | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||
| BUY69A Trans GP BJT NPN 400V 10A 100000mW 3-Pin(2+Tab) TO-3 |
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Semelab | GP BJT | NPN | Bipolar Power | Single | 400 | 1 | 10 | 2 to 30 | 15@2.5A@10V | 100000 | 3 | TO-3 | TO | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||
| 2N7085-QR-B Trans MOSFET N-CH 100V 20A 3-Pin(3+Tab) TO-257AB |
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Semelab | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 100 | ±20 | 4 | 20 | 75@10V | 35@10V | 35 | 60000 | 1400@25V | 3 | TO-257AB | No | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||
| IRFY340-QR-B N-CHANNEL POWER MOSFET FOR HI-REL APPLICATIONS |
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Semelab | MOSFETs | 3 | TO-257AB | No | No | No | No | No | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||
| BUV42 Trans GP BJT NPN 250V 12A 120000mW 3-Pin(2+Tab) TO-3 |
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Semelab | GP BJT | NPN | Bipolar Power | Single | 250 | 1 | 12 | 120000 | 3 | TO-3 | TO | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||||
BCY71-QR-B
GENERAL PURPOSE PNP SILICON TRANSISTOR
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Semelab | GP BJT | Si | 3 | TO-18 | TO | No | No | No | No | No | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||
| DMD1029 Trans RF MOSFET N-CH 70V 35A 5-Pin Case D1 |
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Semelab | HF-MOSFETs | Si | N | Dual Common Source | Enhancement | 2 | 70 | ±20 | 7 | 35 | 875000 | 420(Max)@28V | 1 | 16(Min) | 5 | Case D1 | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||
| BYV32-200M-QR-B HERMETICALLY SEALED DUAL FAST RECOVERY SILICON RECTIFIER FOR HI-REL APPLICATIONS |
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Semelab | Gleichrichter | 3 | TO-257AB | No | No | No | No | No | No | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||
2N3114CSM
Trans GP BJT NPN 150V 0.15A 3-Pin CLLCC-1
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Semelab | GP BJT | NPN | Bipolar Small Signal | Si | Single | 150 | 1 | 150 | 5 | 0.9@5mA@50mA | 0.15 | 2 to 30|30 to 50 | 15@0.1mA@10V|30@30mA@10V | 350 | 1@5mA@50mA | 3 | CLLCC-1 | LCC | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||
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2N2905ACSM-QR-B
Trans GP BJT PNP 60V 0.6A 3-Pin CLLCC-1
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Semelab | GP BJT | PNP | Bipolar Small Signal | Si | Single | 60 | 1 | 60 | 5 | 1.3@15mA@150mA|2.6@50mA@500mA | 0.6 | 50 to 120 | 75@0.1mA@10V|100@1mA@10V|100@10mA@10V|100@150mA@10V|50@500mA@10V | 325 | 30(Max) | 500 | 0.4@15mA@150mA|1.6@50mA@500mA | 8(Max) | 45 | 3 | CLLCC-1 | LCC | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||
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2N3634CSM
Trans GP BJT PNP 140V 1A 1000mW 3-Pin CLLCC-1
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Semelab | GP BJT | PNP | Bipolar Power | Si | Single | 140 | 1 | 140 | 5 | 0.8@1mA@10mA|0.9@5mA@50mA | 1 | 2 to 30|30 to 50|50 to 120 | 40@0.1mA@10V|45@1mA@10V|50@10mA@10V|50@50mA@10V|25@150mA@10V | 75(Max) | 1000 | 0.3@1mA@10mA|0.5@5mA@50mA | 10(Max) | 3 | 400 | 3 | CLLCC-1 | LCC | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||
| DMD1029-A Trans RF MOSFET N-CH 70V 35A 5-Pin Case D1 |
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Semelab | HF-MOSFETs | Si | N | Dual Common Source | Enhancement | 2 | 70 | ±20 | 7 | 35 | 438000 | 420(Max)@28V | 1 | 16(Min) | 5 | Case D1 | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||
| BDS12N1A Trans GP BJT NPN 100V 15A 43750mW |
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Semelab | GP BJT | NPN | Bipolar Power | Si | Single | 100 | 1 | 100 | 5 | 2.5@2.5A@10A | 15 | 2 to 30|30 to 50 | 40@0.5A@4V|15@5A@4V|5@10A@4V | 4 | 43750 | 1@0.5A@5A|3@2.5A@10A | 700 | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||
| D2010UK Trans RF MOSFET 65V 8A 3-Pin Case DP |
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Semelab | HF-MOSFETs | Si | Single | 1 | 65 | ±20 | 8 | 83000 | 96(Max)@0V | 50 | 20 | 10(Min) | 3 | Case DP | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||
| 2N7086-QR-B N-CHANNEL ENHANCEMENT MODE TRANSISTOR |
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Semelab | MOSFETs | 3 | TO-257AB | No | No | No | No | No | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||
| BDS21-QR-EB Trans GP BJT PNP 80V 5A 3-Pin(3+Tab) TO-257AB |
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Semelab | GP BJT | PNP | Bipolar Power | Si | Single | 80 | 1 | 80 | 5 | 5 | 500 to 3600 | 1000@0.5A@3V|1000@3A@3V | 35000 | 2@12mA@3A|4@20mA@5A | 3 | TO-257AB | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||
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2N2222ACSM-JQR-B
Trans GP BJT NPN 50V 0.8A 3-Pin CLLCC-1
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Semelab | GP BJT | NPN | Bipolar Power | Single | 50 | 1 | 75 | 6 | 1.2@15mA@150mA|2@50mA@500mA | 0.8 | 30 to 50|50 to 120 | 50@0.1mA@10V|75@1mA@10V|100@10mA@10V|100@150mA@10V|30@500mA@10V | 500 | 0.3@15mA@150mA|1@50mA@500mA | 250 | 3 | CLLCC-1 | LCC | No | Unknown | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||
| BDS13 Trans GP BJT PNP 60V 15A 43750mW 3-Pin(3+Tab) TO-257AB |
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Semelab | GP BJT | PNP | Bipolar Power | Si | Single | 60 | 1 | 60 | 5 | 2.5@2.5A@10A | 15 | 2 to 30|30 to 50 | 40@0.5A@4V|15@5A@4V|5@10A@4V | 43750 | 1@0.5A@5A|3@2.5A@10A | 3 | TO-257AB | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||
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BFX85
Trans GP BJT NPN 60V 1A 800mW 3-Pin TO-39
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Semelab | GP BJT | NPN | Bipolar Power | Si | Single | 60 | 1 | 100 | 1.2@1mA@10mA|1.3@15mA@150mA|1.5@50mA@500mA|2@100mA@1A | 1 | 2 to 30|30 to 50|50 to 120 | 50@10mA@10V|70@150mA@10V|30@500mA@10V|15@1A@10V | 200 | 35 | 800 | 0.2@1mA@10mA|0.35@15mA@150mA|1@50mA@500mA|1.6@100mA@1A | 7 | 55(Typ) | 3 | TO-39 | TO | No | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||
| BDY58 Trans GP BJT NPN 125V 25A 175000mW 3-Pin(2+Tab) TO-3 |
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Semelab | GP BJT | NPN | Bipolar Power | Si | Single | 125 | 1 | 160 | 10 | 2@1A@10A | 25 | 50 to 120 | 60(Max) | 1 | 175000 | 1.4@1A@10A | 1000 | 3 | TO-3 | TO | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||
| BDS12 Trans GP BJT NPN 100V 15A 43750mW 3-Pin(3+Tab) TO-257AB |
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Semelab | GP BJT | NPN | Bipolar Power | Si | Single | 100 | 1 | 100 | 5 | 2.5@2.5A@10A | 15 | 2 to 30|30 to 50 | 40@0.5A@4V|15@5A@4V|5@10A@4V | 43750 | 1@0.5A@5A|3@2.5A@10A | 3 | TO-257AB | Unknown | No | No | No | No | EAR99 | No | No |