TT Electronics / Semelab Dioden, Transistoren und Thyristoren
| Teile-Nr. | Preis | Bestand | Hersteller | Kategorie | Type | Category | Material | Channel Type | Configuration | Channel Mode | Peak Reverse Repetitive Voltage - (V) | Maximum Collector-Emitter Voltage - (V) | Number of Elements per Chip | Maximum Continuous Forward Current - (mA) | Maximum Collector-Base Voltage - (V) | Maximum Drain-Gate Voltage - (V) | Maximum Base-Emitter Voltage - (V) | Peak Non-Repetitive Forward Surge Current - (A) | Maximum Forward Voltage - (V) | Maximum Drain-Source Voltage - (V) | Maximum Base-Emitter Saturation Voltage - (V) | Peak Reverse Current - (uA) | Maximum Gate-Source Voltage - (V) | Maximum DC Collector Current - (A) | Maximum Continuous DC Collector Current - (A) | Operational Bias Conditions | Maximum Gate Threshold Voltage - (V) | Maximum Continuous Drain Current - (A) | Peak Reverse Recovery Time - (ns) | Minimum DC Current Gain Range | Minimum DC Current Gain | Maximum Drain-Source Resistance - (mOhm) | Typical Gate Charge @ Vgs - (nC) | Maximum Junction Ambient Thermal Resistance | Maximum Junction Case Thermal Resistance | Typical Input Capacitance - (pF) | Typical Gate Charge @ 10V - (nC) | Maximum Power Dissipation - (mW) | Maximum Collector-Emitter Saturation Voltage - (V) | Typical Output Capacitance - (pF) | Typical Input Capacitance @ Vds - (pF) | Minimum Frequency - (MHz) | Maximum Output Power - (W) | Typical Power Gain - (dB) | Maximum Transition Frequency - (MHz) | Maximum Noise Figure - (dB) | Maximum Turn-On Time - (ns) | Process Technology | Rad Hard | Pin Count | Supplier Package | Standard Package Name | CECC Qualified | ESD Protection | ESCC Qualified | Military | AEC Qualified | Auto motive | P PAP | ECCN Code | SVHC | SVHC Exceeds Threshold |
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2N6845
Trans MOSFET P-CH 100V 4A 3-Pin TO-39
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Semelab | MOSFETs | Power MOSFET | P | Single | Enhancement | 1 | 100 | ±20 | 4 | 4 | 690@10V | 16.3(Max)@10V | 16.3(Max) | 20000 | 380@25V | 3 | TO-39 | TO | No | Unknown | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||
| 2N6788 Trans MOSFET N-CH 100V 6A 3-Pin TO-39 |
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Semelab | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 100 | ±20 | 4 | 6 | 345@10V | 17(Max)@10V | 17(Max) | 20000 | 350@25V | 3 | TO-39 | TO | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||
BCY71
Trans GP BJT PNP 45V 350mW 3-Pin TO-18
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Semelab | GP BJT | PNP | Bipolar Small Signal | Si | Single | 45 | 1 | 45 | 5 | 1.2@5mA@50mA | 2 to 30 | 15@50mA@1V | 350 | 0.5@5mA@50mA | 3 | TO-18 | TO | No | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||
| BDS20-QR-EB Trans GP BJT NPN 80V 5A 3-Pin(3+Tab) TO-257AB |
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Semelab | GP BJT | NPN | Bipolar Power | Si | Single | 80 | 1 | 80 | 5 | 5 | 500 to 3600 | 1000@0.5A@3V|1000@3A@3V | 35000 | 2@12mA@3A|4@20mA@5A | 3 | TO-257AB | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||
| BDX65C BIPOLAR NPN DARLINGTON DEVICE |
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Semelab | Darlington BJT | 3 | TO-3 | TO | No | No | No | No | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||
| BDX66A Trans Darlington PNP 80V 20A 150000mW 3-Pin(2+Tab) TO-3 |
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Semelab | Darlington BJT | PNP | Single | 80 | 1 | 80 | 5 | 20 | 1000@10A@3V | 150000 | 2@40mA@10A | 3 | TO-3 | TO | No | Unknown | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||
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BFX34
Trans GP BJT NPN 60V 2A 870mW 3-Pin TO-39
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Semelab | GP BJT | NPN | Bipolar Power | Single | 60 | 1 | 120 | 6 | 1.6@0.5A@5A | 2 | 30 to 50 | 40@2A@2V | 870 | 1@0.5A@5A | 3 | TO-39 | TO | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||
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BFX48
Trans GP BJT PNP 30V 0.1A 360mW 3-Pin TO-18
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Semelab | GP BJT | PNP | Bipolar Power | Si | Single | 30 | 1 | 30 | 5 | 0.75@0.1mA@1mA|0.9@1mA@10mA|1.1@5mA@50mA | 0.1 | 2 to 30|30 to 50|50 to 120 | 40@10uA@1V|70@100uA@1V|90@10mA@1V|20@50mA@1V | 486(Typ) | 175(Typ) | 4 | 360 | 0.13@0.1mA@1mA|0.14@1mA@10mA|0.3@5mA@50mA | 2.2 | 6 | 50 | 3 | TO-18 | TO | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||
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BFX85
Trans GP BJT NPN 60V 1A 800mW 3-Pin TO-39
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Semelab | GP BJT | NPN | Bipolar Power | Si | Single | 60 | 1 | 100 | 2@100mA@1A|1.2@1mA@10mA|1.3@15mA@150mA|1.5@50mA@500mA | 1 | 2 to 30|30 to 50|50 to 120 | 50@10mA@10V|70@150mA@10V|30@500mA@10V|15@1A@10V | 200 | 35 | 800 | 0.2@1mA@10mA|0.35@15mA@150mA|1@50mA@500mA|1.6@100mA@1A | 7 | 55(Typ) | 3 | TO-39 | TO | No | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||
| BDY26B Trans GP BJT NPN 180V 6A 50000mW 3-Pin(2+Tab) TO-3 |
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Semelab | GP BJT | NPN | Bipolar Power | Si | Single | 180 | 1 | 300 | 10 | 1.2@0.25A@2A | 6 | 30 to 50 | 30@2A@4V | 3.5 | 50000 | 0.6@0.25A@2A | 120(Max) | 1000 | 3 | TO-3 | TO | No | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||
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BSS44
Trans GP BJT PNP 60V 5A 5000mW 3-Pin TO-39
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Semelab | GP BJT | PNP | Bipolar Power | Single | 60 | 1 | 5 | 30 to 50 | 40@2A@2V | 5000 | 3 | TO-39 | TO | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||
| BFY81 Trans GP BJT NPN 45V 0.05A 500mW 6-Pin TO-77 |
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Semelab | GP BJT | NPN | Bipolar Small Signal | Si | Dual | 45 | 2 | 45 | 6 | 0.05 | 50 to 120|120 to 200 | 60@10uA@5V|100@100uA@5V|150@1mA@5V | 437 | 219 | 500 | 0.35@0.1mA@1mA | 6(Max) | 4 | 6 | TO-77 | TO | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||
| BUV42 Trans GP BJT NPN 250V 12A 120000mW 3-Pin(2+Tab) TO-3 |
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Semelab | GP BJT | NPN | Bipolar Power | Single | 250 | 1 | 12 | 120000 | 3 | TO-3 | TO | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||||
| BYV32-200AM Diode Switching 200V 20A 3-Pin(3+Tab) TO-257AB |
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Semelab | Gleichrichter | Switching Diode | Dual Common Anode | 200 | 20 | 80 | 1.5 | 30 | 35 | 3 | TO-257AB | No | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||||
| BYV32-200M Diode Switching 200V 20A 3-Pin(3+Tab) TO-257AB |
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Semelab | Gleichrichter | Switching Diode | Dual Common Cathode | 200 | 20 | 80 | 1.5 | 30 | 35 | 3 | TO-257AB | No | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||
| IRFE9130 Trans MOSFET P-CH 100V 6.1A 16-Pin LCC-4 |
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Semelab | MOSFETs | Power MOSFET | P | Single Hex Drain Dual Gate Octal Source | Enhancement | 1 | 100 | ±20 | 4 | 6.1 | 345@10V | 38.4(Max)@10V | 38.4(Max) | 22000 | 800@25V | 16 | LCC-4 | LCC | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||
| IRFY240 Trans MOSFET N-CH 200V 12A 3-Pin(3+Tab) TO-257AB |
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Semelab | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 200 | ±20 | 4 | 12 | 220@10V | 60(Max)@10V | 60(Max) | 60000 | 1300@25V | 3 | TO-257AB | No | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||
| IRF9530-220M Trans MOSFET P-CH 100V 9.3A 3-Pin(3+Tab) TO-257AB |
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Semelab | MOSFETs | Power MOSFET | P | Single | Enhancement | 1 | 100 | ±20 | 4 | 9.3 | 360@10V | 30(Max)@10V | 30(Max) | 45000 | 800@25V | 3 | TO-257AB | No | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||
| IRFY9130 Trans MOSFET P-CH 100V 9.3A 3-Pin(3+Tab) TO-257AB |
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Semelab | MOSFETs | Power MOSFET | P | Single | Enhancement | 1 | 100 | ±20 | 4 | 9.3 | 360@10V | 30(Max)@10V | 30(Max) | 45000 | 800@25V | 3 | TO-257AB | No | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||
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2N2905A
Trans GP BJT PNP 60V 0.6A 800mW 3-Pin TO-39
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Semelab | GP BJT | PNP | Bipolar Power | Si | Single | 60 | 1 | 60 | 5 | 1.3@15mA@150mA|2.6@50mA@500mA | 0.6 | 50 to 120 | 75@0.1mA@10V|100@1mA@10V|100@10mA@10V|100@150mA@10V|50@500mA@10V | 800 | 0.4@15mA@150mA|1.6@50mA@500mA | 45 | 3 | TO-39 | TO | No | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||
| 2N6686 Trans GP BJT NPN 180V 25A 3-Pin(2+Tab) TO-3 |
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Semelab | GP BJT | NPN | Bipolar Power | Single | 180 | 1 | 8 | 1.8@2.5A@25A | 25 | 2 to 30|30 to 50 | 30@1A@2V|25@10A@2V|15@25A@2V | 200000 | 1.5@2.5A@25A | 100 | 3 | TO-3 | TO | No | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||
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2N6661
Trans MOSFET N-CH 90V 0.9A 3-Pin TO-39
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Semelab | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 90 | ±20 | 2 | 0.9 | 4000@10V | 725 | 50(Max)@25V | 3 | TO-39 | TO | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||
| 2N3634CSM-QR-B Trans GP BJT PNP 140V 1A 1000mW 3-Pin CLLCC-1 |
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Semelab | GP BJT | PNP | Bipolar Power | Si | Single | 140 | 1 | 140 | 5 | 0.8@1mA@10mA|0.9@5mA@50mA | 1 | 2 to 30|30 to 50|50 to 120 | 40@0.1mA@10V|45@1mA@10V|50@10mA@10V|50@50mA@10V|25@150mA@10V | 1000 | 0.3@1mA@10mA|0.5@5mA@50mA | 3 | CLLCC-1 | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||
| BUZ50A-220M-ISO Fet Devices |
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Semelab | JFETs | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BUY69A Trans GP BJT NPN 400V 10A 100000mW 3-Pin(2+Tab) TO-3 |
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Semelab | GP BJT | NPN | Bipolar Power | Single | 400 | 1 | 10 | 2 to 30 | 15@2.5A@10V | 100000 | 3 | TO-3 | TO | No | No | No | No | EAR99 | No | No |